JP2011527829A5 - - Google Patents

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Publication number
JP2011527829A5
JP2011527829A5 JP2011517413A JP2011517413A JP2011527829A5 JP 2011527829 A5 JP2011527829 A5 JP 2011527829A5 JP 2011517413 A JP2011517413 A JP 2011517413A JP 2011517413 A JP2011517413 A JP 2011517413A JP 2011527829 A5 JP2011527829 A5 JP 2011527829A5
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JP
Japan
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forming
processing method
layer
trench
back surface
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JP2011517413A
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Japanese (ja)
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JP2011527829A (ja
JP5420656B2 (ja
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Priority claimed from US12/169,810 external-priority patent/US20100006908A1/en
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Publication of JP2011527829A5 publication Critical patent/JP2011527829A5/ja
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JP2011517413A 2008-07-09 2009-07-07 裏面トレンチを有する裏面照射型イメージセンサ Active JP5420656B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,810 US20100006908A1 (en) 2008-07-09 2008-07-09 Backside illuminated image sensor with shallow backside trench for photodiode isolation
US12/169,810 2008-07-09
PCT/US2009/003977 WO2010027395A2 (en) 2008-07-09 2009-07-07 Backside illuminated image sensor with backside trenches

Publications (3)

Publication Number Publication Date
JP2011527829A JP2011527829A (ja) 2011-11-04
JP2011527829A5 true JP2011527829A5 (enExample) 2012-06-14
JP5420656B2 JP5420656B2 (ja) 2014-02-19

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JP2011517413A Active JP5420656B2 (ja) 2008-07-09 2009-07-07 裏面トレンチを有する裏面照射型イメージセンサ

Country Status (7)

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US (2) US20100006908A1 (enExample)
EP (1) EP2311091B1 (enExample)
JP (1) JP5420656B2 (enExample)
KR (1) KR101341048B1 (enExample)
CN (1) CN102067316B (enExample)
TW (1) TWI452684B (enExample)
WO (1) WO2010027395A2 (enExample)

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