JP5420656B2 - 裏面トレンチを有する裏面照射型イメージセンサ - Google Patents

裏面トレンチを有する裏面照射型イメージセンサ Download PDF

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JP5420656B2
JP5420656B2 JP2011517413A JP2011517413A JP5420656B2 JP 5420656 B2 JP5420656 B2 JP 5420656B2 JP 2011517413 A JP2011517413 A JP 2011517413A JP 2011517413 A JP2011517413 A JP 2011517413A JP 5420656 B2 JP5420656 B2 JP 5420656B2
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forming
trench
image sensor
processing method
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JP2011527829A (ja
JP2011527829A5 (enExample
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フレデリック ティー ブラディ
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011517413A 2008-07-09 2009-07-07 裏面トレンチを有する裏面照射型イメージセンサ Active JP5420656B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,810 US20100006908A1 (en) 2008-07-09 2008-07-09 Backside illuminated image sensor with shallow backside trench for photodiode isolation
US12/169,810 2008-07-09
PCT/US2009/003977 WO2010027395A2 (en) 2008-07-09 2009-07-07 Backside illuminated image sensor with backside trenches

Publications (3)

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JP2011527829A JP2011527829A (ja) 2011-11-04
JP2011527829A5 JP2011527829A5 (enExample) 2012-06-14
JP5420656B2 true JP5420656B2 (ja) 2014-02-19

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US (2) US20100006908A1 (enExample)
EP (1) EP2311091B1 (enExample)
JP (1) JP5420656B2 (enExample)
KR (1) KR101341048B1 (enExample)
CN (1) CN102067316B (enExample)
TW (1) TWI452684B (enExample)
WO (1) WO2010027395A2 (enExample)

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Publication number Publication date
WO2010027395A3 (en) 2010-05-14
JP2011527829A (ja) 2011-11-04
EP2311091B1 (en) 2016-11-23
TW201010071A (en) 2010-03-01
CN102067316B (zh) 2013-05-01
US20110059572A1 (en) 2011-03-10
US20100006908A1 (en) 2010-01-14
KR101341048B1 (ko) 2013-12-12
US8076170B2 (en) 2011-12-13
TWI452684B (zh) 2014-09-11
KR20110030670A (ko) 2011-03-23
CN102067316A (zh) 2011-05-18
WO2010027395A2 (en) 2010-03-11
EP2311091A2 (en) 2011-04-20

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