CN102067316B - 具有背侧沟槽的背侧照射式图像传感器 - Google Patents

具有背侧沟槽的背侧照射式图像传感器 Download PDF

Info

Publication number
CN102067316B
CN102067316B CN2009801231369A CN200980123136A CN102067316B CN 102067316 B CN102067316 B CN 102067316B CN 2009801231369 A CN2009801231369 A CN 2009801231369A CN 200980123136 A CN200980123136 A CN 200980123136A CN 102067316 B CN102067316 B CN 102067316B
Authority
CN
China
Prior art keywords
backside
layer
wafer
image sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801231369A
Other languages
English (en)
Chinese (zh)
Other versions
CN102067316A (zh
Inventor
弗雷德里克·T·布雷迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
Original Assignee
Omnivision Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Technologies Inc filed Critical Omnivision Technologies Inc
Publication of CN102067316A publication Critical patent/CN102067316A/zh
Application granted granted Critical
Publication of CN102067316B publication Critical patent/CN102067316B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2009801231369A 2008-07-09 2009-07-07 具有背侧沟槽的背侧照射式图像传感器 Active CN102067316B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,810 US20100006908A1 (en) 2008-07-09 2008-07-09 Backside illuminated image sensor with shallow backside trench for photodiode isolation
US12/169,810 2008-07-09
PCT/US2009/003977 WO2010027395A2 (en) 2008-07-09 2009-07-07 Backside illuminated image sensor with backside trenches

Publications (2)

Publication Number Publication Date
CN102067316A CN102067316A (zh) 2011-05-18
CN102067316B true CN102067316B (zh) 2013-05-01

Family

ID=41504361

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801231369A Active CN102067316B (zh) 2008-07-09 2009-07-07 具有背侧沟槽的背侧照射式图像传感器

Country Status (7)

Country Link
US (2) US20100006908A1 (enExample)
EP (1) EP2311091B1 (enExample)
JP (1) JP5420656B2 (enExample)
KR (1) KR101341048B1 (enExample)
CN (1) CN102067316B (enExample)
TW (1) TWI452684B (enExample)
WO (1) WO2010027395A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) * 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8896712B2 (en) * 2007-07-20 2014-11-25 Omnivision Technologies, Inc. Determining and correcting for imaging device motion during an exposure
US8350952B2 (en) * 2008-06-04 2013-01-08 Omnivision Technologies, Inc. Image sensors with improved angle response
US8017426B2 (en) * 2008-07-09 2011-09-13 Omnivision Technologies, Inc. Color filter array alignment mark formation in backside illuminated image sensors
US7915067B2 (en) * 2008-07-09 2011-03-29 Eastman Kodak Company Backside illuminated image sensor with reduced dark current
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US8224082B2 (en) * 2009-03-10 2012-07-17 Omnivision Technologies, Inc. CFA image with synthetic panchromatic image
US8068153B2 (en) * 2009-03-27 2011-11-29 Omnivision Technologies, Inc. Producing full-color image using CFA image
US8045024B2 (en) * 2009-04-15 2011-10-25 Omnivision Technologies, Inc. Producing full-color image with reduced motion blur
US8674469B2 (en) * 2009-04-23 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure for backside illuminated image sensor
US8460979B2 (en) * 2009-04-27 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a backside illuminated image sensor
US8203633B2 (en) * 2009-05-27 2012-06-19 Omnivision Technologies, Inc. Four-channel color filter array pattern
US8237831B2 (en) * 2009-05-28 2012-08-07 Omnivision Technologies, Inc. Four-channel color filter array interpolation
US8125546B2 (en) * 2009-06-05 2012-02-28 Omnivision Technologies, Inc. Color filter array pattern having four-channels
US8253832B2 (en) * 2009-06-09 2012-08-28 Omnivision Technologies, Inc. Interpolation for four-channel color filter array
JP2011086709A (ja) * 2009-10-14 2011-04-28 Toshiba Corp 固体撮像装置及びその製造方法
US8389377B2 (en) * 2010-04-02 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Sensor element isolation in a backside illuminated image sensor
KR101803719B1 (ko) * 2010-10-26 2017-12-04 삼성전자 주식회사 후면 조사형 액티브 픽셀 센서 어레이 및 그 제조 방법, 이를 구비하는 후면 조사형 이미지 센서
US8308379B2 (en) 2010-12-01 2012-11-13 Digitaloptics Corporation Three-pole tilt control system for camera module
FR2976119A1 (fr) * 2011-06-06 2012-12-07 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif d'imagerie a illumination face arriere, et dispositif correspondant
US8975668B2 (en) * 2011-10-28 2015-03-10 Intevac, Inc. Backside-thinned image sensor using Al2 O3 surface passivation
US9099389B2 (en) * 2012-02-10 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for reducing stripe patterns
US9029759B2 (en) * 2012-04-12 2015-05-12 Nan Chang O-Film Optoelectronics Technology Ltd Compact camera modules with features for reducing Z-height and facilitating lens alignment and methods for manufacturing the same
US9001268B2 (en) 2012-08-10 2015-04-07 Nan Chang O-Film Optoelectronics Technology Ltd Auto-focus camera module with flexible printed circuit extension
US9287308B2 (en) 2013-04-08 2016-03-15 Omnivision Technologies, Inc. Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
KR102268714B1 (ko) 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102340346B1 (ko) * 2014-08-26 2021-12-16 삼성전자주식회사 칼라 필터 어레이 및 그 제조 방법 및 이를 포함하는 이미지 센서
US9484370B2 (en) 2014-10-27 2016-11-01 Omnivision Technologies, Inc. Isolated global shutter pixel storage structure
US10134926B2 (en) 2015-02-03 2018-11-20 Microsoft Technology Licensing, Llc Quantum-efficiency-enhanced time-of-flight detector
WO2016187032A1 (en) * 2015-05-15 2016-11-24 Skyworks Solutions, Inc. Radio frequency isolation using substrate opening
CN108346673B (zh) * 2017-01-23 2021-11-12 中芯国际集成电路制造(上海)有限公司 一种背照式图像传感器及其制造方法和电子装置
FR3074962A1 (fr) * 2017-12-08 2019-06-14 Stmicroelectronics (Crolles 2) Sas Dispositif electronique capteur d'images
CN108470741A (zh) * 2018-03-16 2018-08-31 昆山锐芯微电子有限公司 图像传感器及其形成方法
US10432883B1 (en) * 2018-06-12 2019-10-01 Semiconductor Components Industries, Llc Backside illuminated global shutter pixels
US12287307B2 (en) * 2019-08-21 2025-04-29 Life Technologies Corporation Devices incorporating multilane flow cell
CN110783356B (zh) * 2019-11-05 2022-09-02 锐芯微电子股份有限公司 时间延迟积分图像传感器及其形成方法
US12422617B2 (en) 2022-06-16 2025-09-23 Globalfoundries U.S. Inc. Photonic integrated circuit including passive optical guard
US20240094465A1 (en) * 2022-09-16 2024-03-21 Globalfoundries U.S. Inc. Photonic integrated circuit including plurality of discrete optical guard elements

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1738045A (zh) * 2002-11-12 2006-02-22 微米技术有限公司 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术
EP1840967A1 (en) * 2004-12-24 2007-10-03 Hamamatsu Photonics K.K. Photodiode array

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ222404A (en) * 1987-11-02 1991-06-25 Precision Technology Inc Vehicle tracking by comparison of transmitted phase at multiple receivers
DE3728401A1 (de) * 1987-08-26 1989-03-09 Robot Foto Electr Kg Verkehrsueberwachungseinrichtung
US5161632A (en) * 1990-06-01 1992-11-10 Mitsubishi Denki K.K. Tracking control device for a vehicle
US5155689A (en) * 1991-01-17 1992-10-13 By-Word Technologies, Inc. Vehicle locating and communicating method and apparatus
JPH05296767A (ja) * 1992-04-20 1993-11-09 Mitsubishi Electric Corp 車間距離検出装置
US5227313A (en) * 1992-07-24 1993-07-13 Eastman Kodak Company Process for making backside illuminated image sensors
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US6371000B1 (en) * 1994-07-11 2002-04-16 Jaycor Electromagnetic vehicle disabler system and method
US5490075A (en) * 1994-08-01 1996-02-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Global positioning system synchronized active light autonomous docking system
US5786236A (en) * 1996-03-29 1998-07-28 Eastman Kodak Company Backside thinning using ion-beam figuring
FI100229B (fi) * 1996-05-27 1997-10-31 Markku Ahti Limingoja Menetelmä ja laitteisto toisen ajoneuvon pakkopysäyttämiseksi
US5892441A (en) * 1996-06-26 1999-04-06 Par Government Systems Corporation Sensing with active electronic tags
US5839759A (en) * 1997-03-06 1998-11-24 Trigo; Kevin A. Vehicle capture device
US6052068A (en) * 1997-03-25 2000-04-18 Frederick J. Price Vehicle identification system
US6429036B1 (en) * 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
US6168965B1 (en) * 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
JP4235787B2 (ja) * 2001-10-03 2009-03-11 ソニー株式会社 固体撮像素子の製造方法
US7091536B2 (en) * 2002-11-14 2006-08-15 Micron Technology, Inc. Isolation process and structure for CMOS imagers
US7462553B2 (en) * 2003-06-25 2008-12-09 Semicoa Ultra thin back-illuminated photodiode array fabrication methods
CA2435453C (en) 2003-07-16 2008-08-05 Robert James Hunter Conversion kit for turning a cross-legged folding cot into a tiered cot
US7214999B2 (en) * 2003-10-31 2007-05-08 Motorola, Inc. Integrated photoserver for CMOS imagers
JP4412710B2 (ja) * 2003-11-25 2010-02-10 キヤノン株式会社 光電変換装置の設計方法
JP2005353996A (ja) * 2004-06-14 2005-12-22 Sony Corp 固体撮像素子とその製造方法、並びに半導体装置とその製造方法
US7385238B2 (en) * 2004-08-16 2008-06-10 Micron Technology, Inc. Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US7315014B2 (en) * 2005-08-30 2008-01-01 Micron Technology, Inc. Image sensors with optical trench
US20070052050A1 (en) * 2005-09-07 2007-03-08 Bart Dierickx Backside thinned image sensor with integrated lens stack
US7576404B2 (en) * 2005-12-16 2009-08-18 Icemos Technology Ltd. Backlit photodiode and method of manufacturing a backlit photodiode
US7586139B2 (en) * 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
JP2007288136A (ja) * 2006-03-24 2007-11-01 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP5055026B2 (ja) * 2007-05-31 2012-10-24 富士フイルム株式会社 撮像素子、撮像素子の製造方法、及び、撮像素子用の半導体基板
JP2010536187A (ja) * 2007-08-10 2010-11-25 アレイ・オプトロニクス・インコーポレーテッド トレンチ分離した背面照射式薄型フォトダイオード・アレイ
US7985612B2 (en) * 2008-02-19 2011-07-26 Sri International Method and device for reducing crosstalk in back illuminated imagers
US7859033B2 (en) * 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US8017426B2 (en) * 2008-07-09 2011-09-13 Omnivision Technologies, Inc. Color filter array alignment mark formation in backside illuminated image sensors
KR20110034930A (ko) * 2009-09-29 2011-04-06 삼성전자주식회사 태양 전지 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1738045A (zh) * 2002-11-12 2006-02-22 微米技术有限公司 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术
EP1840967A1 (en) * 2004-12-24 2007-10-03 Hamamatsu Photonics K.K. Photodiode array

Also Published As

Publication number Publication date
WO2010027395A3 (en) 2010-05-14
JP2011527829A (ja) 2011-11-04
EP2311091B1 (en) 2016-11-23
TW201010071A (en) 2010-03-01
US20110059572A1 (en) 2011-03-10
US20100006908A1 (en) 2010-01-14
KR101341048B1 (ko) 2013-12-12
US8076170B2 (en) 2011-12-13
JP5420656B2 (ja) 2014-02-19
TWI452684B (zh) 2014-09-11
KR20110030670A (ko) 2011-03-23
CN102067316A (zh) 2011-05-18
WO2010027395A2 (en) 2010-03-11
EP2311091A2 (en) 2011-04-20

Similar Documents

Publication Publication Date Title
CN102067316B (zh) 具有背侧沟槽的背侧照射式图像传感器
US7915067B2 (en) Backside illuminated image sensor with reduced dark current
US8017426B2 (en) Color filter array alignment mark formation in backside illuminated image sensors
US8119435B2 (en) Wafer level processing for backside illuminated image sensors
US8211732B2 (en) Image sensor with raised photosensitive elements
KR100997299B1 (ko) 이미지센서 및 그 제조방법
US20080303932A1 (en) Isolation structure for image sensor device
WO2008133787A1 (en) Image sensor with improved quantum efficiency of red pixels and corresponding fabrication method
US12364046B2 (en) Photodiode structure for image sensor
KR20100079450A (ko) 후면 수광 이미지센서의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: OMNIVISION TECH INC.

Free format text: FORMER OWNER: KODAK COMPANY

Effective date: 20110725

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: NEW YORK, THE USA TO: CALIFORNIA, THE USA

TA01 Transfer of patent application right

Effective date of registration: 20110725

Address after: American California

Applicant after: Omnivision Tech Inc.

Address before: American New York

Applicant before: Eastman Kodak Corp.

C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: American California

Patentee after: OmniVision Technologies, Inc.

Address before: American California

Patentee before: Omnivision Tech Inc.