JP2011527461A5 - - Google Patents
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- Publication number
- JP2011527461A5 JP2011527461A5 JP2011517254A JP2011517254A JP2011527461A5 JP 2011527461 A5 JP2011527461 A5 JP 2011527461A5 JP 2011517254 A JP2011517254 A JP 2011517254A JP 2011517254 A JP2011517254 A JP 2011517254A JP 2011527461 A5 JP2011527461 A5 JP 2011527461A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- coating composition
- antireflective
- absorption
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000010521 absorption reaction Methods 0.000 claims description 29
- 239000006117 anti-reflective coating Substances 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 229920000642 polymer Polymers 0.000 claims description 23
- 230000003667 anti-reflective effect Effects 0.000 claims description 17
- 150000002009 diols Chemical class 0.000 claims description 14
- 150000004662 dithiols Chemical class 0.000 claims description 14
- 150000001470 diamides Chemical class 0.000 claims description 12
- 150000004072 triols Chemical class 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 230000002547 anomalous effect Effects 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 230000031700 light absorption Effects 0.000 claims description 2
- 239000008199 coating composition Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229920005862 polyol Polymers 0.000 description 5
- 150000003077 polyols Chemical class 0.000 description 5
- 229920003180 amino resin Polymers 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 125000004434 sulfur atom Chemical group 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 125000002009 alkene group Chemical group 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- QZQIWEZRSIPYCU-UHFFFAOYSA-N trithiole Chemical compound S1SC=CS1 QZQIWEZRSIPYCU-UHFFFAOYSA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/133,567 US8329387B2 (en) | 2008-07-08 | 2008-07-08 | Antireflective coating compositions |
| US12/133,567 | 2008-07-08 | ||
| PCT/IB2009/005486 WO2010004378A1 (en) | 2008-07-08 | 2009-04-29 | Antirelective coating compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011527461A JP2011527461A (ja) | 2011-10-27 |
| JP2011527461A5 true JP2011527461A5 (https=) | 2015-07-02 |
| JP5765854B2 JP5765854B2 (ja) | 2015-08-19 |
Family
ID=40952422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011517254A Active JP5765854B2 (ja) | 2008-07-08 | 2009-04-29 | 反射防止コーティング組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8329387B2 (https=) |
| EP (1) | EP2300507B1 (https=) |
| JP (1) | JP5765854B2 (https=) |
| KR (1) | KR101536798B1 (https=) |
| CN (1) | CN102056954B (https=) |
| MY (1) | MY155289A (https=) |
| TW (1) | TWI510577B (https=) |
| WO (1) | WO2010004378A1 (https=) |
Families Citing this family (46)
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| US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
| US8501383B2 (en) * | 2009-05-20 | 2013-08-06 | Rohm And Haas Electronic Materials Llc | Coating compositions for use with an overcoated photoresist |
| US9244352B2 (en) * | 2009-05-20 | 2016-01-26 | Rohm And Haas Electronic Materials, Llc | Coating compositions for use with an overcoated photoresist |
| US8507192B2 (en) * | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
| US8445181B2 (en) | 2010-06-03 | 2013-05-21 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
| EP2472329B1 (en) * | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
| US8465902B2 (en) | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
| US9170494B2 (en) | 2012-06-19 | 2015-10-27 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective compositions and methods of using same |
| US8900797B2 (en) | 2012-09-26 | 2014-12-02 | Az Electronic Materials (Luxembourg) S.A.R.L. | Developable bottom anti-reflective coating |
| US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
| US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
| US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
| US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
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| WO2015012177A1 (ja) | 2013-07-24 | 2015-01-29 | Jsr株式会社 | パターン形成方法 |
| US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
| US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
| US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
| JP6458954B2 (ja) * | 2013-12-27 | 2019-01-30 | 日産化学株式会社 | トリアジン環及び硫黄原子を主鎖に有する共重合体を含むレジスト下層膜形成組成物 |
| US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
| US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
| JP6086618B2 (ja) * | 2015-02-13 | 2017-03-01 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びレジスト膜 |
| KR102441290B1 (ko) * | 2015-07-29 | 2022-09-07 | 주식회사 동진쎄미켐 | 유기 반사방지막 형성용 조성물 |
| TWI646397B (zh) * | 2015-10-31 | 2019-01-01 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用的塗料組合物 |
| KR102653125B1 (ko) | 2016-01-13 | 2024-04-01 | 삼성전자주식회사 | 포토레지스트의 하부막 조성물 및 이를 이용한 패턴 형성 방법 |
| US10203602B2 (en) * | 2016-09-30 | 2019-02-12 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
| KR102047538B1 (ko) * | 2017-02-03 | 2019-11-21 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| US20180364575A1 (en) * | 2017-06-15 | 2018-12-20 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
| KR102264693B1 (ko) * | 2018-06-11 | 2021-06-11 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| WO2020004122A1 (ja) * | 2018-06-26 | 2020-01-02 | 日産化学株式会社 | グリシジルエステル化合物との反応生成物を含むレジスト下層膜形成組成物 |
| KR102288386B1 (ko) * | 2018-09-06 | 2021-08-10 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102776115B1 (ko) * | 2018-12-12 | 2025-03-07 | 제이에스알 가부시키가이샤 | 감광성 수지 조성물, 레지스트 패턴막의 제조 방법, 및 도금 조형물의 제조 방법 |
| CN109705306B (zh) * | 2018-12-13 | 2021-02-26 | 江南大学 | 一种uv固化聚二甲基硅氧烷基改性耐候涂料的制备方法 |
| KR102348675B1 (ko) * | 2019-03-06 | 2022-01-06 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102400603B1 (ko) * | 2019-03-29 | 2022-05-19 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102186921B1 (ko) * | 2019-12-18 | 2020-12-04 | 이근수 | 삼원공중합체, 그 제조 방법, 삼원공중합체를 포함하는 반사방지막 및 응용 |
| CN112354566B (zh) * | 2020-10-30 | 2023-04-21 | 中北大学 | 一种巴比妥酸-多金属氧簇杂化物及其制备方法 |
| JP7408591B2 (ja) * | 2021-03-22 | 2024-01-05 | 四国化成工業株式会社 | カルボキシル基を有するイソシアヌレート化合物および該化合物を用いたエポキシ樹脂組成物 |
| CN117501179A (zh) * | 2021-06-02 | 2024-02-02 | 默克专利有限公司 | 使用含有有机酸化合物的组合物的方法、含有有机酸化合物的光刻组合物以及制造抗蚀剂图案的方法 |
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| US7932018B2 (en) | 2008-05-06 | 2011-04-26 | Az Electronic Materials Usa Corp. | Antireflective coating composition |
| US8221965B2 (en) | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
| BRPI1012721B1 (pt) | 2009-04-03 | 2020-02-18 | Polynt Composites USA Inc. | Composições termoestáveis que contém anéis de isocianurato |
| US8507192B2 (en) | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
-
2008
- 2008-07-08 US US12/133,567 patent/US8329387B2/en not_active Expired - Fee Related
-
2009
- 2009-04-29 JP JP2011517254A patent/JP5765854B2/ja active Active
- 2009-04-29 MY MYPI2011000054A patent/MY155289A/en unknown
- 2009-04-29 KR KR1020107027326A patent/KR101536798B1/ko active Active
- 2009-04-29 CN CN200980120871.4A patent/CN102056954B/zh active Active
- 2009-04-29 WO PCT/IB2009/005486 patent/WO2010004378A1/en not_active Ceased
- 2009-04-29 EP EP09785893.0A patent/EP2300507B1/en not_active Not-in-force
- 2009-04-30 TW TW098114511A patent/TWI510577B/zh not_active IP Right Cessation
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