JP2011523508A - 半導体デバイス、反射型フォトインタラプタおよび反射型フォトインタラプタ用のハウジングを製造する方法 - Google Patents

半導体デバイス、反射型フォトインタラプタおよび反射型フォトインタラプタ用のハウジングを製造する方法 Download PDF

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JP2011523508A
JP2011523508A JP2011510817A JP2011510817A JP2011523508A JP 2011523508 A JP2011523508 A JP 2011523508A JP 2011510817 A JP2011510817 A JP 2011510817A JP 2011510817 A JP2011510817 A JP 2011510817A JP 2011523508 A JP2011523508 A JP 2011523508A
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semiconductor device
semiconductor chip
cavity
housing
injection
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Japanese (ja)
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JP2011523508A5 (enExample
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ツィツルスペルガー ミヒャエル
ツァイラー トーマス
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2011523508A publication Critical patent/JP2011523508A/ja
Publication of JP2011523508A5 publication Critical patent/JP2011523508A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
JP2011510817A 2008-05-26 2009-04-17 半導体デバイス、反射型フォトインタラプタおよび反射型フォトインタラプタ用のハウジングを製造する方法 Pending JP2011523508A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008025159A DE102008025159A1 (de) 2008-05-26 2008-05-26 Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025159.3 2008-05-26
PCT/DE2009/000545 WO2009143797A1 (de) 2008-05-26 2009-04-17 Halbleiterbauelement, reflexlichtschranke und verfahren zur herstellung eines gehäuses dafür

Publications (2)

Publication Number Publication Date
JP2011523508A true JP2011523508A (ja) 2011-08-11
JP2011523508A5 JP2011523508A5 (enExample) 2012-05-24

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JP2011510817A Pending JP2011523508A (ja) 2008-05-26 2009-04-17 半導体デバイス、反射型フォトインタラプタおよび反射型フォトインタラプタ用のハウジングを製造する方法

Country Status (7)

Country Link
US (1) US9165913B2 (enExample)
EP (1) EP2279533B1 (enExample)
JP (1) JP2011523508A (enExample)
KR (1) KR20110015550A (enExample)
CN (1) CN102047444A (enExample)
DE (1) DE102008025159A1 (enExample)
WO (1) WO2009143797A1 (enExample)

Cited By (1)

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JP2022010580A (ja) * 2020-06-29 2022-01-17 京セラ株式会社 近接センサ用パッケージ、近接センサ及び電子モジュール

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DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010012712A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauteil
DE102010038186A1 (de) * 2010-10-14 2012-04-19 Sick Ag Optoelektronischer Sensor mit Linienanordnung von Einzelemittern
DE102010053809A1 (de) 2010-12-08 2012-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
DE102011105374B4 (de) * 2011-06-22 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
CA2855744C (en) 2011-12-08 2020-06-02 Alcon Research Ltd. Selectively moveable valve elements for aspiration and irrigation circuits
DE102012101573B3 (de) * 2012-02-27 2013-05-08 Sick Ag Reflektor für einen optoelektronischen Sensor
US9549850B2 (en) 2013-04-26 2017-01-24 Novartis Ag Partial venting system for occlusion surge mitigation
TWI521671B (zh) * 2013-07-25 2016-02-11 菱生精密工業股份有限公司 The package structure of the optical module
US10403671B2 (en) * 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
DE102016113514A1 (de) * 2016-07-21 2018-01-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102016213980A1 (de) * 2016-07-29 2018-02-01 Robert Bosch Gmbh Optische Anordnung für ein LiDAR-System, LiDAR-System und Arbeitsvorrichtung
CN106449543A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件
CN106449437A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件的制造方法
WO2018153464A1 (en) * 2017-02-23 2018-08-30 Osram Opto Semiconductors Gmbh Sensor element
CN108198870B (zh) * 2018-01-09 2019-10-22 北京永安多谱检测科技有限公司 一种光探测器
EP4119012B1 (en) 2020-08-06 2024-05-22 Foshan Shunde Midea Water Dispenser Mfg. Co., Ltd. Water dispensing apparatus, and control method for water dispensing apparatus

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JPH08130325A (ja) * 1994-09-08 1996-05-21 Sharp Corp 反射型フォトインタラプタおよびその製造方法
JPH11204827A (ja) * 1998-01-13 1999-07-30 Sharp Corp 光結合装置
JP2001156325A (ja) * 1999-11-29 2001-06-08 Citizen Electronics Co Ltd フォトリフレクター
JP2003133498A (ja) * 2001-10-25 2003-05-09 Sharp Corp 光結合装置のリードフレーム及び光結合装置の製造方法
JP2005311286A (ja) * 2003-10-10 2005-11-04 Matsushita Electric Ind Co Ltd 光学デバイスおよびその製造方法
JP2006032566A (ja) * 2004-07-14 2006-02-02 Sanyo Electric Co Ltd 受発光素子モジュール、受光素子モジュール、及び発光素子モジュール
JP2006038572A (ja) * 2004-07-26 2006-02-09 Sharp Corp 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器
JP2006108294A (ja) * 2004-10-04 2006-04-20 New Japan Radio Co Ltd チップ型ホトリフレクタおよびその製造方法
JP2007189116A (ja) * 2006-01-16 2007-07-26 Towa Corp 光素子の樹脂封止成形方法
JP2008022006A (ja) * 2006-07-14 2008-01-31 Lg Innotek Co Ltd 発光ダイオードパッケージ
JP2008072013A (ja) * 2006-09-15 2008-03-27 Nichia Chem Ind Ltd 発光装置

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DE19600678A1 (de) * 1996-01-10 1997-07-24 Siemens Ag Optoelektronisches Halbleiter-Bauelement
TW418422B (en) 1998-05-20 2001-01-11 Rohm Co Ltd Reflection-type sensor
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US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
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JPH04252082A (ja) * 1991-01-10 1992-09-08 Sharp Corp 光結合装置
JPH08130325A (ja) * 1994-09-08 1996-05-21 Sharp Corp 反射型フォトインタラプタおよびその製造方法
JPH11204827A (ja) * 1998-01-13 1999-07-30 Sharp Corp 光結合装置
JP2001156325A (ja) * 1999-11-29 2001-06-08 Citizen Electronics Co Ltd フォトリフレクター
JP2003133498A (ja) * 2001-10-25 2003-05-09 Sharp Corp 光結合装置のリードフレーム及び光結合装置の製造方法
JP2005311286A (ja) * 2003-10-10 2005-11-04 Matsushita Electric Ind Co Ltd 光学デバイスおよびその製造方法
JP2006032566A (ja) * 2004-07-14 2006-02-02 Sanyo Electric Co Ltd 受発光素子モジュール、受光素子モジュール、及び発光素子モジュール
JP2006038572A (ja) * 2004-07-26 2006-02-09 Sharp Corp 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器
JP2006108294A (ja) * 2004-10-04 2006-04-20 New Japan Radio Co Ltd チップ型ホトリフレクタおよびその製造方法
JP2007189116A (ja) * 2006-01-16 2007-07-26 Towa Corp 光素子の樹脂封止成形方法
JP2008022006A (ja) * 2006-07-14 2008-01-31 Lg Innotek Co Ltd 発光ダイオードパッケージ
JP2008072013A (ja) * 2006-09-15 2008-03-27 Nichia Chem Ind Ltd 発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022010580A (ja) * 2020-06-29 2022-01-17 京セラ株式会社 近接センサ用パッケージ、近接センサ及び電子モジュール

Also Published As

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US9165913B2 (en) 2015-10-20
EP2279533A1 (de) 2011-02-02
CN102047444A (zh) 2011-05-04
DE102008025159A1 (de) 2009-12-10
US20110266559A1 (en) 2011-11-03
KR20110015550A (ko) 2011-02-16
WO2009143797A1 (de) 2009-12-03
EP2279533B1 (de) 2019-01-09

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