JP2011523508A5 - - Google Patents

Download PDF

Info

Publication number
JP2011523508A5
JP2011523508A5 JP2011510817A JP2011510817A JP2011523508A5 JP 2011523508 A5 JP2011523508 A5 JP 2011523508A5 JP 2011510817 A JP2011510817 A JP 2011510817A JP 2011510817 A JP2011510817 A JP 2011510817A JP 2011523508 A5 JP2011523508 A5 JP 2011523508A5
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor chip
cavity
injection
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011510817A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011523508A (ja
Filing date
Publication date
Priority claimed from DE102008025159A external-priority patent/DE102008025159A1/de
Application filed filed Critical
Publication of JP2011523508A publication Critical patent/JP2011523508A/ja
Publication of JP2011523508A5 publication Critical patent/JP2011523508A5/ja
Pending legal-status Critical Current

Links

JP2011510817A 2008-05-26 2009-04-17 半導体デバイス、反射型フォトインタラプタおよび反射型フォトインタラプタ用のハウジングを製造する方法 Pending JP2011523508A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008025159A DE102008025159A1 (de) 2008-05-26 2008-05-26 Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025159.3 2008-05-26
PCT/DE2009/000545 WO2009143797A1 (de) 2008-05-26 2009-04-17 Halbleiterbauelement, reflexlichtschranke und verfahren zur herstellung eines gehäuses dafür

Publications (2)

Publication Number Publication Date
JP2011523508A JP2011523508A (ja) 2011-08-11
JP2011523508A5 true JP2011523508A5 (enExample) 2012-05-24

Family

ID=41066143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011510817A Pending JP2011523508A (ja) 2008-05-26 2009-04-17 半導体デバイス、反射型フォトインタラプタおよび反射型フォトインタラプタ用のハウジングを製造する方法

Country Status (7)

Country Link
US (1) US9165913B2 (enExample)
EP (1) EP2279533B1 (enExample)
JP (1) JP2011523508A (enExample)
KR (1) KR20110015550A (enExample)
CN (1) CN102047444A (enExample)
DE (1) DE102008025159A1 (enExample)
WO (1) WO2009143797A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010012712A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauteil
DE102010038186A1 (de) * 2010-10-14 2012-04-19 Sick Ag Optoelektronischer Sensor mit Linienanordnung von Einzelemittern
DE102010053809A1 (de) 2010-12-08 2012-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
DE102011105374B4 (de) * 2011-06-22 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
CA2855744C (en) 2011-12-08 2020-06-02 Alcon Research Ltd. Selectively moveable valve elements for aspiration and irrigation circuits
DE102012101573B3 (de) * 2012-02-27 2013-05-08 Sick Ag Reflektor für einen optoelektronischen Sensor
US9549850B2 (en) 2013-04-26 2017-01-24 Novartis Ag Partial venting system for occlusion surge mitigation
TWI521671B (zh) * 2013-07-25 2016-02-11 菱生精密工業股份有限公司 The package structure of the optical module
US10403671B2 (en) * 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
DE102016113514A1 (de) * 2016-07-21 2018-01-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102016213980A1 (de) * 2016-07-29 2018-02-01 Robert Bosch Gmbh Optische Anordnung für ein LiDAR-System, LiDAR-System und Arbeitsvorrichtung
CN106449543A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件
CN106449437A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件的制造方法
WO2018153464A1 (en) * 2017-02-23 2018-08-30 Osram Opto Semiconductors Gmbh Sensor element
CN108198870B (zh) * 2018-01-09 2019-10-22 北京永安多谱检测科技有限公司 一种光探测器
JP2022010580A (ja) * 2020-06-29 2022-01-17 京セラ株式会社 近接センサ用パッケージ、近接センサ及び電子モジュール
EP4119012B1 (en) 2020-08-06 2024-05-22 Foshan Shunde Midea Water Dispenser Mfg. Co., Ltd. Water dispensing apparatus, and control method for water dispensing apparatus

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2656185A1 (de) 1976-12-11 1978-06-15 Licentia Gmbh Reflexionslichtschranke aus einem lumineszenz-halbleiterbauelement und einem fotobauelement in einem gemeinsamen gehaeuse
US4309605A (en) 1979-10-02 1982-01-05 New Japan Radio Co., Ltd. Photo-reflective sensor
US4285730A (en) * 1979-10-05 1981-08-25 Corning Glass Works Moldable glasses
JPS5893388A (ja) 1981-11-30 1983-06-03 New Japan Radio Co Ltd 反射型光結合半導体装置の製造方法
EP1022787B2 (de) 1989-05-31 2012-07-11 OSRAM Opto Semiconductors GmbH Verfahren zum Herstellen eines oberflächenmontierbaren Opto-Bauelements und oberflächenmontierbares Opto-Bauelement
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JPH04252082A (ja) 1991-01-10 1992-09-08 Sharp Corp 光結合装置
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JP3261280B2 (ja) * 1994-09-08 2002-02-25 シャープ株式会社 反射型フォトインタラプタおよびその製造方法
DE19600678A1 (de) * 1996-01-10 1997-07-24 Siemens Ag Optoelektronisches Halbleiter-Bauelement
JPH11204827A (ja) 1998-01-13 1999-07-30 Sharp Corp 光結合装置
TW418422B (en) 1998-05-20 2001-01-11 Rohm Co Ltd Reflection-type sensor
JP2001156325A (ja) 1999-11-29 2001-06-08 Citizen Electronics Co Ltd フォトリフレクター
JP4034062B2 (ja) 2001-10-25 2008-01-16 シャープ株式会社 光結合装置のリードフレーム及び光結合装置の製造方法
DE10214121C1 (de) * 2002-03-28 2003-12-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Halbleiterchips
US6876008B2 (en) * 2003-07-31 2005-04-05 Lumileds Lighting U.S., Llc Mount for semiconductor light emitting device
JP4175651B2 (ja) 2003-10-10 2008-11-05 松下電器産業株式会社 光学デバイス
JP2006032566A (ja) 2004-07-14 2006-02-02 Sanyo Electric Co Ltd 受発光素子モジュール、受光素子モジュール、及び発光素子モジュール
JP2006038572A (ja) * 2004-07-26 2006-02-09 Sharp Corp 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器
JP2006108294A (ja) 2004-10-04 2006-04-20 New Japan Radio Co Ltd チップ型ホトリフレクタおよびその製造方法
US7652244B2 (en) * 2004-10-05 2010-01-26 Finisar Corporation Combined laser transmitter and photodetector receiver package
DE102005061798A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung
JP5192646B2 (ja) * 2006-01-16 2013-05-08 Ｔｏｗａ株式会社 光素子の樹脂封止方法、その樹脂封止装置、および、その製造方法
DE102006016523A1 (de) 2006-04-07 2007-10-11 Osram Opto Semiconductors Gmbh Kippsensor
KR101134752B1 (ko) * 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置

Similar Documents

Publication Publication Date Title
JP2011523508A5 (enExample)
CN106663659B (zh) 可表面安装的半导体器件及其制造方法
CN104798215B (zh) 带有蓝宝石倒装芯片的光电半导体组件
US9258467B2 (en) Camera module
EP2654093B1 (en) Package and method for manufacturing package
KR101291141B1 (ko) Ｃｏｂ 타입의 발광소자 모듈을 포함하는 백라이트 유닛
KR102146342B1 (ko) 레이저 부품 및 그 제조 방법
CN103797580B (zh) 用于制造多个光电子器件的方法和光电子器件
KR100899554B1 (ko) 발광다이오드 패키지 및 그 제조방법
CN101569023A (zh) 用于光电子器件的壳体和光电子器件在壳体中的布置
CN106653742B (zh) 邻近传感器、电子设备以及制造邻近传感器的方法
KR20120039023A (ko) 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법
US20240282881A1 (en) Embedded wafer level optical sensor packaging
TW202032734A (zh) 半導體裝置和製造半導體裝置的方法
US12095229B2 (en) Light emitter unit having at least one VCSEL chip
CN217822823U (zh) 电子器件
US9059368B2 (en) Semiconductor device and method for manufacturing the same
CN105144380B (zh) 光电半导体器件及制造其的方法
KR101457500B1 (ko) 근접 조도 센서의 제작 방법
JP2015510277A (ja) 基板上で成形されたカプセル化くぼみを有する半導体レーザチップパッケージ及びこれを形成するための方法
CN205211751U (zh) 邻近传感器以及电子设备
KR20170048381A (ko) 광전자 구성요소를 생산하기 위한 방법 및 광전자 구성요소
US9472536B2 (en) Semiconductor device and method for manufacturing the same
KR101565016B1 (ko) 휨 개선을 위한 반도체 패키지 구조 및 방법
TW201448286A (zh) 發光二極體封裝結構及其製造方法