KR20110015550A - 반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법 - Google Patents

반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법 Download PDF

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Publication number
KR20110015550A
KR20110015550A KR1020107025555A KR20107025555A KR20110015550A KR 20110015550 A KR20110015550 A KR 20110015550A KR 1020107025555 A KR1020107025555 A KR 1020107025555A KR 20107025555 A KR20107025555 A KR 20107025555A KR 20110015550 A KR20110015550 A KR 20110015550A
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KR
South Korea
Prior art keywords
housing
semiconductor chip
cavity
semiconductor
light barrier
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KR1020107025555A
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English (en)
Korean (ko)
Inventor
마이클 지트즐스퍼거
토마스 제일러
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20110015550A publication Critical patent/KR20110015550A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00—Prospecting or detecting by optical means
    • G01V8/10—Detecting, e.g. by using light barriers
    • G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Led Device Packages (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
KR1020107025555A 2008-05-26 2009-04-17 반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법 Withdrawn KR20110015550A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008025159A DE102008025159A1 (de) 2008-05-26 2008-05-26 Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025159.3 2008-05-26

Publications (1)

Publication Number Publication Date
KR20110015550A true KR20110015550A (ko) 2011-02-16

Family

ID=41066143

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025555A Withdrawn KR20110015550A (ko) 2008-05-26 2009-04-17 반도체 소자, 반사광 배리어 및 그를 위한 하우징 제조 방법

Country Status (7)

Country Link
US (1) US9165913B2 (enExample)
EP (1) EP2279533B1 (enExample)
JP (1) JP2011523508A (enExample)
KR (1) KR20110015550A (enExample)
CN (1) CN102047444A (enExample)
DE (1) DE102008025159A1 (enExample)
WO (1) WO2009143797A1 (enExample)

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DE102010012712A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauteil
DE102010038186A1 (de) * 2010-10-14 2012-04-19 Sick Ag Optoelektronischer Sensor mit Linienanordnung von Einzelemittern
DE102010053809A1 (de) 2010-12-08 2012-06-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements
DE102011105374B4 (de) * 2011-06-22 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund
US9490239B2 (en) * 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
CA2855744C (en) 2011-12-08 2020-06-02 Alcon Research Ltd. Selectively moveable valve elements for aspiration and irrigation circuits
DE102012101573B3 (de) * 2012-02-27 2013-05-08 Sick Ag Reflektor für einen optoelektronischen Sensor
US9549850B2 (en) 2013-04-26 2017-01-24 Novartis Ag Partial venting system for occlusion surge mitigation
TWI521671B (zh) * 2013-07-25 2016-02-11 菱生精密工業股份有限公司 The package structure of the optical module
US10403671B2 (en) * 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
DE102016113514A1 (de) * 2016-07-21 2018-01-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102016213980A1 (de) * 2016-07-29 2018-02-01 Robert Bosch Gmbh Optische Anordnung für ein LiDAR-System, LiDAR-System und Arbeitsvorrichtung
CN106449543A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件
CN106449437A (zh) * 2016-08-30 2017-02-22 张为凤 一种光电子半导体器件的制造方法
WO2018153464A1 (en) * 2017-02-23 2018-08-30 Osram Opto Semiconductors Gmbh Sensor element
CN108198870B (zh) * 2018-01-09 2019-10-22 北京永安多谱检测科技有限公司 一种光探测器
JP2022010580A (ja) * 2020-06-29 2022-01-17 京セラ株式会社 近接センサ用パッケージ、近接センサ及び電子モジュール
EP4119012B1 (en) 2020-08-06 2024-05-22 Foshan Shunde Midea Water Dispenser Mfg. Co., Ltd. Water dispensing apparatus, and control method for water dispensing apparatus

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US4285730A (en) * 1979-10-05 1981-08-25 Corning Glass Works Moldable glasses
JPS5893388A (ja) 1981-11-30 1983-06-03 New Japan Radio Co Ltd 反射型光結合半導体装置の製造方法
EP1022787B2 (de) 1989-05-31 2012-07-11 OSRAM Opto Semiconductors GmbH Verfahren zum Herstellen eines oberflächenmontierbaren Opto-Bauelements und oberflächenmontierbares Opto-Bauelement
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JPH04252082A (ja) 1991-01-10 1992-09-08 Sharp Corp 光結合装置
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JP3261280B2 (ja) * 1994-09-08 2002-02-25 シャープ株式会社 反射型フォトインタラプタおよびその製造方法
DE19600678A1 (de) * 1996-01-10 1997-07-24 Siemens Ag Optoelektronisches Halbleiter-Bauelement
JPH11204827A (ja) 1998-01-13 1999-07-30 Sharp Corp 光結合装置
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JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置

Also Published As

Publication number Publication date
US9165913B2 (en) 2015-10-20
EP2279533A1 (de) 2011-02-02
CN102047444A (zh) 2011-05-04
DE102008025159A1 (de) 2009-12-10
US20110266559A1 (en) 2011-11-03
WO2009143797A1 (de) 2009-12-03
JP2011523508A (ja) 2011-08-11
EP2279533B1 (de) 2019-01-09

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PA0105 International application

Patent event date: 20101115

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid