JP2011520034A5 - - Google Patents

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Publication number
JP2011520034A5
JP2011520034A5 JP2011507660A JP2011507660A JP2011520034A5 JP 2011520034 A5 JP2011520034 A5 JP 2011520034A5 JP 2011507660 A JP2011507660 A JP 2011507660A JP 2011507660 A JP2011507660 A JP 2011507660A JP 2011520034 A5 JP2011520034 A5 JP 2011520034A5
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Japan
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band
shield
cylindrical
ring
width
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JP2011507660A
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Japanese (ja)
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JP2011520034A (ja
JP5762281B2 (ja
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Priority claimed from PCT/US2009/042387 external-priority patent/WO2009135050A2/en
Publication of JP2011520034A publication Critical patent/JP2011520034A/ja
Publication of JP2011520034A5 publication Critical patent/JP2011520034A5/ja
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JP2011507660A 2008-05-02 2009-04-30 Rf物理気相蒸着用処理キット Active JP5762281B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5011208P 2008-05-02 2008-05-02
US61/050,112 2008-05-02
PCT/US2009/042387 WO2009135050A2 (en) 2008-05-02 2009-04-30 Process kit for rf physical vapor deposition

Publications (3)

Publication Number Publication Date
JP2011520034A JP2011520034A (ja) 2011-07-14
JP2011520034A5 true JP2011520034A5 (enExample) 2012-06-21
JP5762281B2 JP5762281B2 (ja) 2015-08-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011507660A Active JP5762281B2 (ja) 2008-05-02 2009-04-30 Rf物理気相蒸着用処理キット

Country Status (6)

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US (2) US9123511B2 (enExample)
JP (1) JP5762281B2 (enExample)
KR (1) KR101511027B1 (enExample)
CN (1) CN102017077B (enExample)
TW (1) TWI494454B (enExample)
WO (1) WO2009135050A2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900471B2 (en) * 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
KR20120089647A (ko) * 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Rf 물리적 기상 증착을 위한 프로세스 키트
US8580092B2 (en) 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
CN108359957A (zh) 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
JP5772499B2 (ja) * 2011-10-24 2015-09-02 旭硝子株式会社 Euvリソグラフィ(euvl)用反射型マスクブランクの製造方法およびeuvl用反射層付基板の製造方法
CN103882390B (zh) * 2012-12-20 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及磁控溅射设备
WO2014159222A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring
US8865012B2 (en) 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
WO2015041978A1 (en) * 2013-09-17 2015-03-26 Applied Materials, Inc. Extended dark space shield
CN104862660B (zh) * 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
US9448261B2 (en) * 2014-04-11 2016-09-20 General Electric Company Systems and methods for reducing attenuation in current transducers
KR102438139B1 (ko) * 2014-12-22 2022-08-29 어플라이드 머티어리얼스, 인코포레이티드 높은 처리량의 프로세싱 챔버를 위한 프로세스 키트
CN107548515B (zh) * 2015-04-24 2019-10-15 应用材料公司 包含流动隔离环的处理套组
CN108352297B (zh) * 2015-12-07 2023-04-28 应用材料公司 合并式盖环
CN109477207A (zh) 2016-09-23 2019-03-15 应用材料公司 溅射喷淋头
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
CN110838429B (zh) * 2018-08-15 2022-07-22 北京北方华创微电子装备有限公司 腔体内衬、等离子体反应腔室和等离子体设备
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
CN113035679B (zh) * 2019-12-24 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
US11670492B2 (en) * 2020-10-15 2023-06-06 Applied Materials, Inc. Chamber configurations and processes for particle control
CN115074679B (zh) * 2021-03-11 2025-02-11 台湾积体电路制造股份有限公司 形成半导体结构的方法和物理气相沉积装置及方法
CN114446495B (zh) * 2022-01-18 2024-08-23 大连理工大学 一种面向等离子体带收集脱落物的倒置样品台
CN117012605A (zh) * 2022-04-29 2023-11-07 中微半导体设备(上海)股份有限公司 等离子体处理装置、隔离环及其制作方法
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
KR100294062B1 (ko) * 1992-10-27 2001-10-24 조셉 제이. 스위니 웨이퍼 처리 챔버에서의 돔형 페데스탈용 클램프 링
JPH0734236A (ja) * 1993-07-19 1995-02-03 Canon Inc 直流スパッタリング装置およびスパッタリング方法
US5632873A (en) * 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US5697427A (en) * 1995-12-22 1997-12-16 Applied Materials, Inc. Apparatus and method for cooling a substrate
US5736021A (en) 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
SG60123A1 (en) * 1996-10-08 1999-02-22 Applied Materials Inc Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition
JP2001509214A (ja) * 1997-01-16 2001-07-10 ボトムフィールド,ロジャー,エル. 蒸気蒸着構成要素及び対応する方法
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
KR20000030996A (ko) 1998-11-02 2000-06-05 윤종용 반도체 건식 식각설비
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
JP2001140054A (ja) 1999-11-15 2001-05-22 Nec Kagoshima Ltd 真空成膜装置のクリーニング方法及び真空成膜装置
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6394023B1 (en) * 2000-03-27 2002-05-28 Applied Materials, Inc. Process kit parts and method for using same
US6296747B1 (en) * 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
US6699375B1 (en) * 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
TW512180B (en) * 2000-09-21 2002-12-01 Promos Technologies Inc Method for maintaining the cleanness of a vacuum chamber of physical vapor deposition system
US20020090464A1 (en) * 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
US6899798B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Reusable ceramic-comprising component which includes a scrificial surface layer
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6730174B2 (en) * 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US6797131B2 (en) * 2002-11-12 2004-09-28 Applied Materials, Inc. Design of hardware features to facilitate arc-spray coating applications and functions
US20050016684A1 (en) * 2003-07-25 2005-01-27 Applied Materials, Inc. Process kit for erosion resistance enhancement
JP2005264177A (ja) 2004-03-16 2005-09-29 Renesas Technology Corp スパッタリング装置およびスパッタリング装置のアッパシールド位置調整方法
US7579067B2 (en) 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8062487B2 (en) * 2007-06-25 2011-11-22 United Microelectronics Corp. Wafer supporting device of a sputtering apparatus
KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
KR20120089647A (ko) * 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Rf 물리적 기상 증착을 위한 프로세스 키트
US8580092B2 (en) * 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
CN108359957A (zh) * 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘

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