JP2019220688A5 - - Google Patents
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- Publication number
- JP2019220688A5 JP2019220688A5 JP2019105901A JP2019105901A JP2019220688A5 JP 2019220688 A5 JP2019220688 A5 JP 2019220688A5 JP 2019105901 A JP2019105901 A JP 2019105901A JP 2019105901 A JP2019105901 A JP 2019105901A JP 2019220688 A5 JP2019220688 A5 JP 2019220688A5
- Authority
- JP
- Japan
- Prior art keywords
- shell
- main body
- dielectric member
- lip portion
- liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/010,239 US11211282B2 (en) | 2018-06-15 | 2018-06-15 | Apparatus to reduce contamination in a plasma etching chamber |
| US16/010,239 | 2018-06-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019220688A JP2019220688A (ja) | 2019-12-26 |
| JP2019220688A5 true JP2019220688A5 (enExample) | 2022-06-10 |
| JP7344676B2 JP7344676B2 (ja) | 2023-09-14 |
Family
ID=68838753
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019105901A Active JP7344676B2 (ja) | 2018-06-15 | 2019-06-06 | プラズマエッチングチャンバ内の汚染を低減する装置 |
| JP2019002034U Active JP3225492U (ja) | 2018-06-15 | 2019-06-06 | プラズマエッチングチャンバ内の汚染を低減する装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019002034U Active JP3225492U (ja) | 2018-06-15 | 2019-06-06 | プラズマエッチングチャンバ内の汚染を低減する装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11211282B2 (enExample) |
| JP (2) | JP7344676B2 (enExample) |
| KR (1) | KR102734548B1 (enExample) |
| CN (2) | CN210110704U (enExample) |
| TW (2) | TWI829710B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11211282B2 (en) * | 2018-06-15 | 2021-12-28 | Applied Materials, Inc. | Apparatus to reduce contamination in a plasma etching chamber |
| KR102731053B1 (ko) | 2020-03-19 | 2024-11-15 | 삼성전자주식회사 | 기판 처리 장치 |
| US12112971B2 (en) * | 2021-03-12 | 2024-10-08 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| TW202324484A (zh) * | 2021-12-03 | 2023-06-16 | 美商蘭姆研究公司 | 基板處理系統中用於增進屏蔽的寬覆蓋邊緣環 |
| US20250236947A1 (en) * | 2024-01-19 | 2025-07-24 | Applied Materials, Inc. | Dielectric Deposition Ring with Fins for Physical Vapor Deposition |
| US20250305141A1 (en) * | 2024-03-27 | 2025-10-02 | Applied Materials, Inc. | Multi-section substrate supports and related methods, process kits, and processing chambers for semiconductor manufacturing |
| WO2025217112A1 (en) * | 2024-04-11 | 2025-10-16 | Lam Research Corporation | Edge ring for high temperature tolerance in substrate processing systems |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5292399A (en) * | 1990-04-19 | 1994-03-08 | Applied Materials, Inc. | Plasma etching apparatus with conductive means for inhibiting arcing |
| US6051286A (en) | 1997-02-12 | 2000-04-18 | Applied Materials, Inc. | High temperature, high deposition rate process and apparatus for depositing titanium layers |
| US5983906A (en) | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
| US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
| US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
| US7858898B2 (en) * | 2007-01-26 | 2010-12-28 | Lam Research Corporation | Bevel etcher with gap control |
| US8398778B2 (en) * | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
| US8270141B2 (en) | 2009-11-20 | 2012-09-18 | Applied Materials, Inc. | Electrostatic chuck with reduced arcing |
| US8485128B2 (en) | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
| JP5893516B2 (ja) * | 2012-06-22 | 2016-03-23 | 東京エレクトロン株式会社 | 被処理体の処理装置及び被処理体の載置台 |
| US8865012B2 (en) * | 2013-03-14 | 2014-10-21 | Applied Materials, Inc. | Methods for processing a substrate using a selectively grounded and movable process kit ring |
| WO2014159222A1 (en) * | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring |
| US9315891B2 (en) * | 2013-03-15 | 2016-04-19 | Applied Materials, Inc. | Methods for processing a substrate using multiple substrate support positions |
| US9449797B2 (en) * | 2013-05-07 | 2016-09-20 | Lam Research Corporation | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface |
| JP6695750B2 (ja) * | 2016-07-04 | 2020-05-20 | 株式会社荏原製作所 | 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置 |
| KR101816861B1 (ko) * | 2016-10-21 | 2018-01-10 | (주)제이하라 | 플라즈마 표면 처리장치 |
| US11211282B2 (en) * | 2018-06-15 | 2021-12-28 | Applied Materials, Inc. | Apparatus to reduce contamination in a plasma etching chamber |
| US10847347B2 (en) * | 2018-08-23 | 2020-11-24 | Applied Materials, Inc. | Edge ring assembly for a substrate support in a plasma processing chamber |
| US20210066051A1 (en) * | 2019-08-28 | 2021-03-04 | Applied Materials, Inc. | High conductance lower shield for process chamber |
| JP7450512B2 (ja) * | 2020-10-07 | 2024-03-15 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| KR20230055550A (ko) * | 2021-10-19 | 2023-04-26 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법 |
-
2018
- 2018-06-15 US US16/010,239 patent/US11211282B2/en active Active
-
2019
- 2019-06-06 JP JP2019105901A patent/JP7344676B2/ja active Active
- 2019-06-06 JP JP2019002034U patent/JP3225492U/ja active Active
- 2019-06-14 TW TW108120575A patent/TWI829710B/zh active
- 2019-06-14 TW TW108207555U patent/TWM590308U/zh unknown
- 2019-06-14 KR KR1020190070888A patent/KR102734548B1/ko active Active
- 2019-06-17 CN CN201920905971.9U patent/CN210110704U/zh active Active
- 2019-06-17 CN CN201910524333.7A patent/CN110610844B/zh active Active
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