JP2019220688A5 - - Google Patents

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Publication number
JP2019220688A5
JP2019220688A5 JP2019105901A JP2019105901A JP2019220688A5 JP 2019220688 A5 JP2019220688 A5 JP 2019220688A5 JP 2019105901 A JP2019105901 A JP 2019105901A JP 2019105901 A JP2019105901 A JP 2019105901A JP 2019220688 A5 JP2019220688 A5 JP 2019220688A5
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Japan
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shell
main body
dielectric member
lip portion
liner
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JP2019105901A
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Japanese (ja)
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JP2019220688A (ja
JP7344676B2 (ja
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Priority claimed from US16/010,239 external-priority patent/US11211282B2/en
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JP2019105901A 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置 Active JP7344676B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/010,239 US11211282B2 (en) 2018-06-15 2018-06-15 Apparatus to reduce contamination in a plasma etching chamber
US16/010,239 2018-06-15

Publications (3)

Publication Number Publication Date
JP2019220688A JP2019220688A (ja) 2019-12-26
JP2019220688A5 true JP2019220688A5 (enExample) 2022-06-10
JP7344676B2 JP7344676B2 (ja) 2023-09-14

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ID=68838753

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019105901A Active JP7344676B2 (ja) 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置
JP2019002034U Active JP3225492U (ja) 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置

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JP2019002034U Active JP3225492U (ja) 2018-06-15 2019-06-06 プラズマエッチングチャンバ内の汚染を低減する装置

Country Status (5)

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US (1) US11211282B2 (enExample)
JP (2) JP7344676B2 (enExample)
KR (1) KR102734548B1 (enExample)
CN (2) CN210110704U (enExample)
TW (2) TWI829710B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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US10199252B2 (en) * 2017-06-30 2019-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal pad for etch rate uniformity
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
KR102731053B1 (ko) 2020-03-19 2024-11-15 삼성전자주식회사 기판 처리 장치
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
CN217387074U (zh) * 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环
US20250236947A1 (en) * 2024-01-19 2025-07-24 Applied Materials, Inc. Dielectric Deposition Ring with Fins for Physical Vapor Deposition
US20250305141A1 (en) * 2024-03-27 2025-10-02 Applied Materials, Inc. Multi-section substrate supports and related methods, process kits, and processing chambers for semiconductor manufacturing
TW202609851A (zh) * 2024-04-11 2026-03-01 美商蘭姆研究公司 基板處理系統中的高溫度容限的邊緣環

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US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7858898B2 (en) * 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
US8398778B2 (en) * 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8270141B2 (en) 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
JP5893516B2 (ja) 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
KR102240762B1 (ko) * 2013-03-14 2021-04-14 어플라이드 머티어리얼스, 인코포레이티드 선택적으로 접지되고 그리고 이동 가능한 프로세스 키트 링을 사용하여 기판을 프로세싱하기 위한 방법 및 장치
US8865012B2 (en) * 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
US9315891B2 (en) * 2013-03-15 2016-04-19 Applied Materials, Inc. Methods for processing a substrate using multiple substrate support positions
US9449797B2 (en) * 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
JP6695750B2 (ja) * 2016-07-04 2020-05-20 株式会社荏原製作所 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置
KR101816861B1 (ko) * 2016-10-21 2018-01-10 (주)제이하라 플라즈마 표면 처리장치
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
US10847347B2 (en) * 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
JP7450512B2 (ja) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102932770B1 (ko) * 2021-10-19 2026-03-03 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법

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