CN210110704U - 用于减少等离子体蚀刻腔室中的污染的设备 - Google Patents

用于减少等离子体蚀刻腔室中的污染的设备 Download PDF

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CN210110704U
CN210110704U CN201920905971.9U CN201920905971U CN210110704U CN 210110704 U CN210110704 U CN 210110704U CN 201920905971 U CN201920905971 U CN 201920905971U CN 210110704 U CN210110704 U CN 210110704U
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A·恩古耶
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Abstract

本文提供用于在基板支撑件中使用的工艺配件部件的实施方式以及结合有所述实施方式的基板支撑件。在一些实施方式中，所述基板支撑件可以包括：主体；接地外壳，所述接地外壳由围绕所述主体设置的导电材料形成；衬里，所述衬里由围绕所述接地外壳设置的导电材料形成，其中所述衬里包括朝向所述主体向内延伸的上唇缘；金属紧固件，所述金属紧固件穿过所述上唇缘设置以将所述衬里耦接到所述接地外壳；以及第一绝缘体环，所述第一绝缘体环设置在所述衬里的所述上唇缘顶上并覆盖所述金属紧固件。

Description

用于减少等离子体蚀刻腔室中的污染的设备
技术领域
本公开文本的实施方式整体涉及基板处理装备，并且更具体地涉及在基板处理装备中使用的基板支撑件。
背景技术
金属紧固件通常用于连接构成处理腔室(诸如等离子体处理腔室)内的基板支撑件的各种结构。本发明人已经发现，在基板支撑件的导电结构附近的金属紧固件(诸如钛(Ti)螺杆)可能在处理腔室内导致Ti污染。
由此，本发明人已经提供一种改进的基板支撑件，这种改进的基板支撑件可以减少或消除来自金属紧固件的金属污染。
实用新型内容
本文提供用于在基板支撑件中使用的工艺配件部件的实施方式以及结合所述实施方式的基板支撑件。在一些实施方式中，基板支撑件包括：主体；接地外壳，所述接地外壳由围绕所述主体设置的导电材料形成；以及衬里，所述衬里由围绕所述接地外壳设置的导电材料形成。所述衬里包括朝向所述主体向内延伸的上唇缘。金属紧固件穿过所述上唇缘设置以将所述衬里耦接到所述接地外壳。第一绝缘体环设置在所述衬里的所述上唇缘顶上并且覆盖所述金属紧固件。
在一些实施方式中，一种基板支撑件包括：主体；轴，所述轴从所述主体向下延伸；导电衬里，所述导电衬里围绕主体设置，其中所述导电衬里具有覆盖接地外壳的上表面的向内延伸的上唇缘；紧固件，所述紧固件穿过所述上唇缘设置以将所述导电衬里耦接到所述接地外壳；第一绝缘体环，所述第一绝缘体环设置在所述衬里的所述上唇缘顶上并且覆盖所述金属紧固件；以及第二绝缘体环，所述第二绝缘体环外接所述主体，其中第二绝缘体环设置在所述第一绝缘体环的带凹口的上内周缘中。
在一些实施方式中，一种基板支撑件包括：主体，所述主体具有圆柱形形状以及由与所述主体的侧壁相垂直的第一表面限定的带凹口的上周缘；导电外壳，所述导电外壳具有围绕所述主体设置的顶表面；导电衬里，所述导电衬里围绕导电外壳设置并具有在所述导电外壳上方延伸的内唇缘；多个紧固件，所述紧固件穿过所述导电衬里设置以将所述导电衬里耦接到所述导电外壳；第一绝缘体环，所述第一绝缘体环设置在所述导电衬里的顶表面上并且覆盖所述多个紧固件；以及第二绝缘体环，所述第二绝缘体环设置在所述第一绝缘体环与所述主体之间，其中所述第二绝缘体环部分地设置在所述主体的带凹口的上周缘内并朝向所述导电衬里向外延伸。
下文描述本公开文本的其它和进一步实施方式。
附图说明
上面简要地概述并在下文更详细地论述的本公开文本的实施方式可以参考在附图中描绘的本公开文本的说明性实施方式来理解。附图仅示出了本公开文本的一些实施方式，并且由此不被认为限制本公开文本的范围，因为本公开文本可允许其它等效实施方式。
图1描绘了根据本公开文本的一些实施方式的与基板支撑件一起使用的等离子体处理腔室的示意性横截面图。
图2描绘了根据本公开文本的一些实施方式的图1的基板支撑件的部分示意性侧视图。
图3描绘了根据本公开文本的一些实施方式的图1的基板支撑件的部分示意性侧视图。
为了便于理解，已经尽可能地使用相同的参考数字表示各图共用的相同元件。附图不一定按比例绘制，并且可以出于清楚目的简化。一个实施方式的元件和特征可以有利地结合在其它实施方式中，而不进一步详述。
具体实施方式
本文提供可以有利地减少或防止工艺腔室内的金属污染(诸如钛(Ti)污染)的用于基板支撑件的工艺配件部件的实施方式。具体地，基板支撑件的实施方式可以包括被配置为覆盖一个或多个金属紧固件的绝缘体环，因此防止处理腔室内的等离子体接触一个或多个金属紧固件。图1描绘了根据本公开文本的一些实施方式的与基板支撑件一起使用的等离子体处理腔室的示意性横截面图。图2描绘了根据图1的基板支撑件的一些实施方式的部分详细示意性侧视图。图3描绘了根据图1的基板支撑件的一些实施方式的部分详细示意性侧视图。
图1是根据本公开文本的一些实施方式的腔室100(诸如等离子体处理腔室)的示意性横截面图。在一些实施方式中，等离子体处理腔室是蚀刻处理腔室。然而，其它类型的处理腔室也可以使用或经修改以用于与本文描述的基板支撑件的实施方式一起使用。例如，本文描述的蚀刻处理腔室和基板支撑件可以在约摄氏50°至约摄氏500°的温度下并在约13MHz至约60MHz的频率下功率为约500W至约10kW之间的功率水平下操作。
腔室100是适当地适于在高温或高功率基板处理期间在腔室内部容积120内维持亚大气压的真空腔室。腔室100包括由盖104覆盖的腔室主体106，所述腔室主体106封闭定位在腔室内部容积120的上半部分中的处理容积122。腔室主体106和盖104可由金属(诸如铝)制成。腔室主体106可经由耦接到接地116来接地。盖104可以电浮动或接地。
基板支撑件124设置在腔室内部容积120内以支撑并保持基板108(例如，诸如半导体基板)、或可静电地保持的其它这种基板。基板支撑件124通常可以包括基座136和用于支撑基座136的中空支撑轴112。中空支撑轴112提供管道，所述管道例如用于向基座136提供工艺气体、流体、冷却剂、功率等。
在一些实施方式中，波纹管组件110围绕中空支撑轴112设置并且在基座136与腔室100的底表面126之间耦接以提供柔性密封件，所述柔性密封件允许基座136竖直运动，同时防止来自腔室100内的真空损失。波纹管组件110也包括与o形环128或接触底表面126以帮助防止腔室真空损失的其它适当的密封元件相接触的波纹管134。
腔室100耦接到真空系统114并与所述真空系统114流体连通，所述真空系统114包括用于排放腔室100的节流阀(未图示)和真空泵(未图示)。腔室100内部的压力可通过调节节流阀和/或真空泵来调整。腔室100也耦接到工艺气体供应118并且与所述工艺气体供应118流体连通，所述工艺气体供应118可将一或多种工艺气体供应到腔室100以用于处理设置在腔室100中的基板。
在操作中，基板108可经由腔室主体106中的开口进入腔室100。开口可经由狭缝阀132或用于选择性提供穿过开口进入腔室100的内部的其它设备来选择性地密封。另外，在操作中，等离子体102可在腔室内部容积120中产生以执行一个或多个工艺。等离子体102可通过经由靠近腔室内部容积120或在所述腔室内部容积120内的一个或多个电极将来自等离子体功率源(例如，RF等离子体电源130)的功率耦接到工艺气体以点燃工艺气体并产生等离子体102来产生。
图2描绘了根据图1的基板支撑件的一些实施方式的部分详细示意性侧视图。基板支撑件124包括具有上表面210的主体208，所述上表面210用于支撑介电构件224，所述介电构件224被配置为静电保持设置在所述介电构件224上的基板202。
主体208可包括导电材料，诸如铝(Al)等。主体208具有阶梯状或带凹口的上周缘206。主体208的上周缘206由与主体208的侧壁211垂直的第一表面214以及在设置在主体208的第一表面214与上表面210之间的阶梯状第二表面215限定。
主体208可以包括在主体208的下表面附近设置的一个或多个传热流体管道(未图示)。传热流体管道可耦接到传热流体源(未图示)以将传热流体供应到所有邻接的管道。传热流体可流过管道以在使用期间控制基板支撑件124的温度和/或温度分布。
在一些实施方式中，利用介电构件224来经由由DC电源(未图示)供应到电极204的DC电压保持基板202。可有利地得益于根据本公开文本的实施方式的修改的适当处理设备的示例包括诸如等离子体反应器之类的处理设备，包括但不限于获自加利福利亚州圣克拉拉(Santa Clara，California)的应用材料公司(Applied Materials，Inc.)的处理设备的任何管线。处理设备的以上列表仅为说明性的，并且也可根据本教示适当地修改其它等离子体反应器和非等离子体设备(诸如CVD反应器、或其它蚀刻处理设备)。
介电构件224还可以包括唇缘225，所述唇缘225从介电构件224的底部部分(例如，与主体208的上表面209相邻)围绕介电构件224径向延伸。唇缘225可延伸到主体208的上表面210的周缘(例如，延伸到主体208的上周缘206的径向内缘)。结合层(未图示)可在主体208的上表面210与介电构件224的下表面之间设置以将主体208结合到介电构件224。当使用结合层时，所述结合层不能完全延伸到主体208的上表面210的周缘。由此，唇缘225的一部分可悬空而非由结合层支撑。
基板支撑件124的附加部件可以包括外接主体208的绝缘体外壳270。绝缘体外壳270可由陶瓷、石英、硅、碳化硅等中的至少一种制造。绝缘体外壳270使主体208与接地外壳246电绝缘。接地外壳246外接绝缘体外壳270。衬里254可外接接地外壳246。间隙276可存在于衬里254与接地外壳246之间。衬里254由导电材料制造。衬里245包括朝基板支撑件124的中心轴向内延伸的唇缘256。在一些实施方式中，唇缘256放置在接地外壳246的顶表面274上。在一些实施方式中，唇缘256向内延伸以抵靠绝缘体外壳270的外侧壁258。
唇缘256包括穿过唇缘设置的一个或多个孔260。沿着唇缘256设置的每个孔260可为用于容纳穿过其中设置的相应紧固件262的任何适当形状。例如，如图2所示，孔260可以包括扩孔，所述扩孔用于允许每个紧固件262的头部(例如，当紧固件是螺栓、螺杆等时)在唇缘256的上表面268下方凹陷。接地外壳246包括与孔260对应的一个或多个开口272。每个开口272可为用于容纳设置在开口272内的相应紧固件262的任何适当形状。在一些实施方式中，开口272可以带有螺纹以与紧固件262的对应螺纹配合。
紧固件262穿过孔260设置以经由开口272将衬里254耦接到接地外壳246。每个紧固件可为螺杆、螺栓、夹具等。在一些实施方式中，紧固件是螺杆。每个紧固件可以包括金属，诸如钛(Ti)、钢合金等。在一些实施方式中，紧固件包括钛(Ti)。在一些实施方式中，垫圈(未图示)可以围绕每个紧固件262设置。垫圈可以包括与紧固件262相同的材料。在一些实施方式中，垫圈是钛(Ti)。
基板支撑件124另外包括围绕主体208设置并且设置在衬里254的唇缘256的顶部上的第一绝缘体环230。调整第一绝缘体环230的大小以覆盖一个或多个孔260。第一绝缘体环230的底表面278在紧固件262之上与衬里254的上表面268形成密封件。在使用时，由第一绝缘体环230提供的密封件有利地限制或防止将紧固件262暴露于腔室100中的等离子体102。在一些实施方式中，第一绝缘体环230外接绝缘体外壳270。第一绝缘体环230可包括石英、氧化铝、阳极化金属(诸如阳极化铝)、用氧化钇涂覆的铝等。
基板支撑件124还包括围绕主体208设置的第二绝缘体环240。第二绝缘体环240设置在主体208的带凹口的上周缘206中。在一些实施方式中，第二绝缘体环240可由石英等制造。第二绝缘体环240包括阶梯状内侧壁212，所述阶梯状内侧壁212与上周缘206的阶梯状第二表面215配合以在其间限定非线性界面。非线性界面添加针对等离子体的弯曲路径，并且破坏从等离子体到在第二绝缘体环240下面穿过主体208设置的任何紧固件的视线。
第二绝缘体环240的阶梯状内侧壁212还可以包括从第二绝缘体环240朝主体208的上周缘206的第一表面214向下延伸的第一部分218。第一部分218可具有在约0.02英寸至1.00英寸之间的长度220。阶梯状内侧壁212还可以包括从第二绝缘体环240沿着主体208的上周缘206的阶梯状第二表面215横向延伸的第二部分222。第二部分222可具有在约0.02英寸至1.00英寸之间的长度。
第二绝缘体环240可以包括围绕第二绝缘体环240的上内缘设置的突出部(ledge)248。突出部248的顶表面可以设置为与介电构件224的唇缘225齐平或设置在所述唇缘225之上。插环216可以设置在第二绝缘体环240的突出部248上。插环216可由硅(Si)等制造。插环216的内部部分226可朝基板支撑件124的中心轴向内延伸并且放置在介电构件224的唇缘225顶上。间隙242可存在于插环216的内部部分226与介电构件224之间。
插环216还可以包括围绕插环216的上内缘设置的突出部244。基板108的周缘可延伸到插环216的突出部244中。然而，突出部244通常被配置为使得基板108不与插环216接触并且完全由介电构件224支撑。
可选地，顶环250设置在第二绝缘体环240的顶表面252顶上。如图2所描绘，顶环可以包括沿着顶环250的下外缘的向下突起。顶环250可由硅(Si)等制造。顶环250可保护第一绝缘体环230免受来自等离子体和/或来自工艺环境的劣化或损伤的影响。
第一绝缘体环230可以包括第一部分280和第二部分282。在一些实施方式中，第一绝缘体环230具有L形横截面。第一部分280设置在衬里254的唇缘256与第二绝缘体环240之间。第一部分280具有比绝缘体外壳270的外径要大的内径，使得第一绝缘体环230可以设置在绝缘体外壳270的上部部分周围。第一绝缘体环230包括带凹口的上内周缘286。第二绝缘体环240设置在第一绝缘体环230的带凹口的上内周缘286中以在其间形成非线性界面。非线性界面添加与上文描述类似的针对等离子体的弯曲路径。第二部分282外接第二绝缘体环240的一部分。例如，第一绝缘体环230的第二部分282可以设置在第二绝缘体环240的带凹口的下外周缘284中。在一些实施方式中，如图2所示，第一绝缘体环230具有与第二绝缘体环240的外径类似(例如，基本上相同)的外径。在一些实施方式中，第一绝缘体环230具有与第二绝缘体环240的外径类似(例如，基本上相同)的外径，使得当第一绝缘体环230设置在第二绝缘体环240的带凹口的下外周缘284中时，第一绝缘体环230的最外侧壁与第二绝缘体环240的最外侧壁基本上竖直地对准(例如，处于基本上沿着公共虚圆柱)。
图3描绘了根据本公开文本的一些实施方式的图1的基板支撑件的部分详细示意性侧视图。除非在以下论述中明确地公开为相反，与图3一致的实施方式可以与上文关于图1及图2的论述相同。在一些实施方式中，第一绝缘体环330具有L形横截面。在一些实施方式中，如图3所示，第一绝缘体环330具有比第二绝缘体环340的外径要大的外径。第一绝缘体环330包括第一部分310(例如，环形基底)和第二部分320(例如，从环形基底向上竖直地延伸的唇缘)。第一部分310设置在第二绝缘体环340与衬里254的唇缘256之间。因此，如图3所描绘，第一部分310的内径小于第二绝缘体环340的外径，使得第二绝缘体环340的径向外部部分与第一部分310的径向内部部分重叠。
第二部分320外接第二绝缘体环340。因此，如图3所描绘，第二部分320的内径大于第二绝缘体环340的外径，使得第二绝缘体环340的径向外部部分从第二部分320的径向内部部分向内径向地设置。
在一些实施方式中，第二部分320延伸到靠近顶环250。在一些实施方式中，第二部分320延伸到靠近顶环250但不接触顶环250，因此在第二部分320的上表面与顶环250的底表面之间限定小的间隙。
在一些实施方式中，并且如图2和图3所描绘，第一绝缘体环230不接触第二绝缘体环240，并且狭窄间隙限定在第一绝缘体环230与第二绝缘体环240的相对表面之间。在一些实施方式中，并且如图2和图3所描绘，第一绝缘体环230仅接触衬里254的唇缘256，并且可选地，接触穿过唇缘256设置的紧固件262的上部部分(若非埋头)。
图2和图3中的第一绝缘体环230和第二绝缘体环240的构造有利地提供与不包括第一绝缘体环230的实施方式相同的自顶向下工艺视图，因此当改变现有的工艺配件以容纳第一绝缘体环230和第二绝缘体环240时维持工艺完整性。换句话说，从处理腔室内的自顶向下视图，第一绝缘体环230从视图中隐藏，并且等离子体有利地不“看到”第一绝缘体环230。因此，可以减少腔室中的污染，而不具有任何对基板上工艺结果的影响或具有最小影响。在与图2一致的实施方式中，在不包括顶环250的工艺期间，第一绝缘体环230另外有利地从视图中隐藏，因此提供附加的处理灵活性。
在一些实施方式中，并且如图2和图3所描绘，上文论述的基板支撑件124的其他部件可以包括在相反的非密封界面之间的小的间隙。例如，小的间隙可以限定在主体208与绝缘体外壳270之间、限定在第一绝缘体环230与第二绝缘体环240之间等。
因此，本文已提供了具有减少的金属污染的基板支撑件124的实施方式。用绝缘材料覆盖金属紧固件有利地减少或防止将在基板支撑件124的导电部件之间的金属紧固件暴露于处理腔室内的等离子体。
尽管上述内容涉及本公开文本的实施方式，但是可在不脱离本公开文本的基本范围的情况下设计本公开文本的其它实施方式和另外实施方式。

Claims (20)

1.一种用于在基板处理腔室中使用的工艺配件，包括：
绝缘体环，所述绝缘体环包括环形主体，所述环形主体被配置为包围基板支撑主体，其中所述环形主体包括阶梯状内侧壁，所述阶梯状内侧壁被配置为与所述基板支撑主体配合，其中所述阶梯状内侧壁包括：第一部分，所述第一部分从所述环形主体向下延伸；和第二部分，所述第二部分从所述环形主体径向向内延伸。
2.如权利要求1所述的工艺配件，其中所述环形主体包括阶梯状外下侧壁。
3.如权利要求2所述的工艺配件，其中所述阶梯状外下侧壁包括两个阶梯。
4.如权利要求2所述的工艺配件，其中所述阶梯状外下侧壁包括三个阶梯。
5.如权利要求1至4中任一项所述的工艺配件，其中所述第一部分具有约0.02英寸至约1.00英寸的长度。
6.如权利要求1至4中任一项所述的工艺配件，其中所述第二部分具有约0.02英寸至约1.00英寸的长度。
7.如权利要求1至4中任一项所述的工艺配件，其中所述环形主体包括突出部，所述突出部围绕上内缘设置。
8.如权利要求7所述的工艺配件，其中所述突出部从所述环形主体的内径延伸至所述第一部分的外径。
9.如权利要求1至4中任一项所述的工艺配件，其中所述环形主体包括带凹口的上外周缘。
10.如权利要求1至4中任一项所述的工艺配件，其中所述环形主体的上表面是基本上平坦的。
11.一种用于在基板处理腔室中使用的工艺配件，包括：
第一绝缘体环，所述第一绝缘体环被配置为包围基板支撑主体，其中所述第一绝缘体环包括带凹口的上内周缘；以及
第二绝缘体环，所述第二绝缘体环被配置为包围所述基板支撑主体，其中所述第二绝缘体环设置在所述第一绝缘体环的所述带凹口的上内周缘中。
12.如权利要求11所述的工艺配件，其中所述第一绝缘体环包括第一部分和第二部分，并且所述第二部分设置在所述第二绝缘体环的带凹口的下外周缘中。
13.如权利要求12所述的工艺配件，其中所述第一部分的内径大于所述第二绝缘体环的最外径。
14.如权利要求11所述的工艺配件，其中所述第一绝缘体环具有比所述第二绝缘体环的外径更大的外径。
15.如权利要求11所述的工艺配件，其中所述第一绝缘体环的外径与所述第二绝缘体环的外径相同。
16.如权利要求11至15中任一项所述的工艺配件，其中所述第二绝缘体环包括突出部，所述突出部围绕上内缘设置。
17.如权利要求11至15中任一项所述的工艺配件，其中所述第二绝缘体环包括带凹口的上外周缘。
18.如权利要求11至15中任一项所述的工艺配件，其中所述第一绝缘体环和所述第二绝缘体环具有在所述第一绝缘体环与所述第二绝缘体环之间的非线性界面。
19.如权利要求11至15中任一项所述的工艺配件，其中从所述第一绝缘体的下表面到上表面限定的所述第一绝缘体环的厚度比从所述第二绝缘体环的下表面到上表面限定的第二绝缘体环的厚度更小。
20.如权利要求11至15中任一项所述的工艺配件，其中狭窄间隙限定在所述第一绝缘体环和所述第二绝缘体环的相对表面之间。
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JP3225492U (ja) 2020-03-12
JP2019220688A (ja) 2019-12-26
US20190385891A1 (en) 2019-12-19
KR20190142255A (ko) 2019-12-26
CN110610844A (zh) 2019-12-24
TWM590308U (zh) 2020-02-01

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