JP2019220688A - プラズマエッチングチャンバ内の汚染を低減する装置 - Google Patents
プラズマエッチングチャンバ内の汚染を低減する装置 Download PDFInfo
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- JP2019220688A JP2019220688A JP2019105901A JP2019105901A JP2019220688A JP 2019220688 A JP2019220688 A JP 2019220688A JP 2019105901 A JP2019105901 A JP 2019105901A JP 2019105901 A JP2019105901 A JP 2019105901A JP 2019220688 A JP2019220688 A JP 2019220688A
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- 238000011109 contamination Methods 0.000 title abstract description 8
- 238000001020 plasma etching Methods 0.000 title 1
- 239000012212 insulator Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 210000002381 plasma Anatomy 0.000 description 20
- 239000010936 titanium Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000013529 heat transfer fluid Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (15)
- 本体と、
本体の周囲に配置され、導電性材料で形成された接地シェルと、
接地シェルの周囲に配置され、導電性材料で形成されたライナであって、本体に向かって内側に延びる上側リップ部を備えるライナと、
上側リップ部を貫通して配置され、ライナを接地シェルに接続する金属製締結具と、
ライナの上側リップ部の上に配置され、金属製締結具を覆う第1絶縁体リングとを備える基板支持体。 - 第1絶縁体リングと本体との間に配置された第2絶縁体リングをさらに備える、請求項1に記載の基板支持体。
- 第1絶縁体リングの外径が第2絶縁体リングの外径と同じである、請求項2に記載の基板支持体。
- 第1絶縁体リングの外径が第2絶縁体リングの外径よりも大きい、請求項2に記載の基板支持体。
- トップリングが第2絶縁体リングの上面に配置されている、請求項2に記載の基板支持体。
- 第2絶縁体リングは、第1絶縁体リングの切欠き付き上側内側周縁部に配置されている、請求項2に記載の基板支持体。
- 第2絶縁体リングは石英を含んでいる、請求項2に記載の基板支持体。
- 第1絶縁体リングは、石英、酸化アルミニウム、陽極酸化アルミニウム、又は酸化イットリウムで被覆されたアルミニウムのうちの少なくとも1つを含んでいる、請求項1〜7のいずれか1項に記載の基板支持体。
- 第1絶縁体リングは、L字形の断面を有している、請求項1〜7のいずれか1項に記載の基板支持体。
- 接地シェルと本体との間に配置された絶縁体シェルであって、接地シェルを本体から電気的に絶縁する絶縁体シェルをさらに備える、請求項1〜7のいずれか1項に記載の基板支持体。
- 金属製締結具はねじを備えている、請求項1〜7のいずれか1項に記載の基板支持体。
- 第1絶縁体リングは第1部分と第2部分とを備え、
第2部分は、第2絶縁体リングの切欠き付き下側外側周縁部に配置されている、請求項2〜7のいずれか1項に記載の基板支持体。 - 第1絶縁体リングと第2絶縁体リングとの間に非直線界面がある、請求項2〜7のいずれか1項に記載の基板支持体。
- 第2絶縁体リングの上面の上に配置されたトップリングをさらに備える、請求項2〜7のいずれか1項に記載の基板支持体。
- 基板支持体を内部に配置するチャンバ本体であって、基板支持体は前述の請求項のいずれか1項に記載の基板支持体であるチャンバ本体を備える処理チャンバ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/010,239 US11211282B2 (en) | 2018-06-15 | 2018-06-15 | Apparatus to reduce contamination in a plasma etching chamber |
US16/010,239 | 2018-06-15 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019220688A true JP2019220688A (ja) | 2019-12-26 |
JP2019220688A5 JP2019220688A5 (ja) | 2022-06-10 |
JP7344676B2 JP7344676B2 (ja) | 2023-09-14 |
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ID=68838753
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2019002034U Active JP3225492U (ja) | 2018-06-15 | 2019-06-06 | プラズマエッチングチャンバ内の汚染を低減する装置 |
JP2019105901A Active JP7344676B2 (ja) | 2018-06-15 | 2019-06-06 | プラズマエッチングチャンバ内の汚染を低減する装置 |
Family Applications Before (1)
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JP2019002034U Active JP3225492U (ja) | 2018-06-15 | 2019-06-06 | プラズマエッチングチャンバ内の汚染を低減する装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11211282B2 (ja) |
JP (2) | JP3225492U (ja) |
KR (1) | KR20190142255A (ja) |
CN (2) | CN210110704U (ja) |
TW (2) | TWM590308U (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US11211282B2 (en) * | 2018-06-15 | 2021-12-28 | Applied Materials, Inc. | Apparatus to reduce contamination in a plasma etching chamber |
KR20210117625A (ko) | 2020-03-19 | 2021-09-29 | 삼성전자주식회사 | 기판 처리 장치 |
US20220293453A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
WO2023101709A1 (en) * | 2021-12-03 | 2023-06-08 | Lam Research Corporation | Wide-coverage edge ring for enhanced shielding in substrate processing systems |
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US8398778B2 (en) * | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
US8865012B2 (en) * | 2013-03-14 | 2014-10-21 | Applied Materials, Inc. | Methods for processing a substrate using a selectively grounded and movable process kit ring |
JP6695750B2 (ja) * | 2016-07-04 | 2020-05-20 | 株式会社荏原製作所 | 基板ホルダの検査装置、これを備えためっき装置、及び外観検査装置 |
US11211282B2 (en) * | 2018-06-15 | 2021-12-28 | Applied Materials, Inc. | Apparatus to reduce contamination in a plasma etching chamber |
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2018
- 2018-06-15 US US16/010,239 patent/US11211282B2/en active Active
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2019
- 2019-06-06 JP JP2019002034U patent/JP3225492U/ja active Active
- 2019-06-06 JP JP2019105901A patent/JP7344676B2/ja active Active
- 2019-06-14 KR KR1020190070888A patent/KR20190142255A/ko active Search and Examination
- 2019-06-14 TW TW108207555U patent/TWM590308U/zh unknown
- 2019-06-14 TW TW108120575A patent/TWI829710B/zh active
- 2019-06-17 CN CN201920905971.9U patent/CN210110704U/zh active Active
- 2019-06-17 CN CN201910524333.7A patent/CN110610844A/zh active Pending
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US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
JP2013511847A (ja) * | 2009-11-20 | 2013-04-04 | アプライド マテリアルズ インコーポレイテッド | アーク放電を低減させた静電チャック |
JP2012015514A (ja) * | 2010-06-30 | 2012-01-19 | Lam Res Corp | プラズマ処理チャンバ用の可動接地リング |
US20140263169A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Methods for processing a substrate using multiple substrate support positions |
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CN210110704U (zh) | 2020-02-21 |
TWM590308U (zh) | 2020-02-01 |
KR20190142255A (ko) | 2019-12-26 |
US20190385891A1 (en) | 2019-12-19 |
JP3225492U (ja) | 2020-03-12 |
US11211282B2 (en) | 2021-12-28 |
JP7344676B2 (ja) | 2023-09-14 |
TW202013427A (zh) | 2020-04-01 |
TWI829710B (zh) | 2024-01-21 |
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