CN202076225U - 等离子体处理室及具有倾斜上表面的热边缘环 - Google Patents
等离子体处理室及具有倾斜上表面的热边缘环 Download PDFInfo
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Abstract
一种具有延长寿命的热边缘环,包含具有倾斜上表面的环形本体。该热边缘环包括垫起在其中使用等离子体处理该衬底的等离子体处理室中支撑的半导体衬底的外缘的台阶。该台阶包括围绕该衬底的该外缘的竖直表面和从该竖直表面的上沿向上和向外延伸的该倾斜表面。
Description
技术领域
本申请大体涉及等离子体处理装置。更具体地说,本申请涉及在等离子体处理室中使用的热边缘环。
背景技术
等离子体处理装置被用于通过包括蚀刻、物理气相沉积(PVD)、化学气相沉积(CVD)、离子注入和抗蚀剂(resist)去除等技术处理半导体衬底。等离子体处理中使用的一种类型的等离子体处理装置包括包含上下电极的反应室。射频(RF)电力被施加到电极之间以将工艺气体激励为等离子体以处理该反应室中的半导体衬底。
等离子体处理室的设计人员所面临的一个挑战是,等离子体蚀刻状况对暴露于该等离子体的处理室表面形成严重的离子轰击。这种离子轰击,与等离子体化学物质和/或蚀刻副产品相结合,可能产生该处理室的等离子体暴露表面的明显的侵蚀、锈蚀和锈蚀-侵蚀。另一个挑战是控制跨越半导体衬底(例如硅衬底)的蚀刻速率一致性,尤其是,以使得该衬底中心的蚀刻速率等于边缘的蚀刻速率。为了减轻这种不一致性,热边缘环和下垫的射频耦合环已被实现为围绕该衬底贴合。热边缘环是一种易耗部件,并需要定期清洁或替换。理想情况是,延长热边缘环的寿命以增加清洁或替换间的平均时间并减少持有成本。本文描述了一种具有更长寿命的热边缘环。
发明内容
本实用新型提供了一种被配置为围绕等离子体处理室中的半导体衬底的热边缘环,等离子体在所述等离子体处理室中产生并被用于处理所述半导体衬底,所述等离子体处理室包含:包含在向外延伸的环形支撑表面和圆形衬底支撑表面之间延伸的竖直侧壁的衬底支座,所述衬底支座被配置为所述半导体衬底被支撑在所述衬底支撑表面上而所述半导体衬底的伸出边缘延伸超出所述外竖直侧壁;支撑在所述环形支撑表面上的射频(RF)耦合环;以及支撑在所述射频耦合环上的所述热边缘环;所述热边缘环包括环形本体,所述环形本体包含被配置为被支撑在所述射频耦合环上的下表面;从所述下表面的内沿向上延伸并围绕所述竖直侧壁的内表面;从所述内表面的上沿向外延伸并从倾斜上表面的内沿向下延伸、并被配置为垫起所述半导体衬底的所述伸出边缘的第一台阶;包含从所述第一台阶的上沿向外并向上延伸的截断锥形表面的所述倾斜上表面;从所述倾斜上表面的外沿向下延伸的外表面;以及从所述外表面的下沿向内延伸并从所述下表面的外沿向上延伸的第二台阶。
热边缘环适于围绕在其中产生等离子体的等离子体处理室中支撑的半导体衬底,该热边缘环包含具有内竖直表面和倾斜上表面的环形本体。该环形本体被配置为支撑在衬底支座的环形支撑表面上。该内竖直表面围绕该衬底支座,而该倾斜上表面从该半导体衬底的边沿向上并向外延伸。
在优选实施方式中,该内表面具有约11.7英寸的直径,该倾斜上表面具有约0.75英寸的宽度,该第一台阶具有具有约11.9英寸的外径、基本上垂直于该热边缘环的中心轴并从该内表面的上 沿向外延伸的水平表面,该第一台阶具有具有约0.075英寸的高度、基本上平行于该热边缘环的该中心轴并从该水平表面的外沿向上延伸到该倾斜上表面的内沿的竖直表面,且该倾斜上表面的该截断锥形表面的张角是约175°到179°。
在该优选实施方式中,该外表面具有约13.4英寸的直径,该第二台阶具有具有约0.11英寸的高度、基本上平行于该热边缘环的该中心轴并从该下表面的外沿向上延伸的竖直表面,该第二台阶具有具有约13.3英寸的内径,基本上垂直于该热边缘环的中心轴并从该竖直表面的上沿向外延伸到该外表面的下沿的水平表面。
该边缘环可以是由电阻率在约5和100mΩ·cm之间的低电阻率硼掺杂单晶硅或者具有5000ohm-cm或更小电阻率的CVD SiC支撑的。
在另一个实施方式中,该热边缘环包括在沿着该热边缘环的内沿的单个位置处的平直边缘以及在该热边缘环的倾斜上表面和下表面之间延伸的单个孔。在此实施方式中,该孔具有约0.3英寸的直径,该孔的中心离该热边缘环的中心约6.4英寸,且该平直边缘位于该热边缘环的与该孔的位置相对的侧面上,该平直边缘离该热边缘环的该中心约5.8英寸而该平直边缘位于与该热边缘环的中心轴平行的轴平面中,该轴平面垂直于穿过该热边缘环的该中心的径向线。
本实用新型还提供了一种等离子体处理室,包含:包含在向外延伸的环形支撑表面和圆形衬底支撑表面之间延伸的竖直侧壁的衬底支座,所述衬底支座被配置为半导体衬底被支撑在所述衬底支撑表面上而所述半导体衬底的伸出边缘向外延伸超出所述竖直侧壁;支撑在所述环形支撑表面上的射频耦合环;以及支撑在所述射频耦合环上的根据权利要求1所述的热边缘环。
附图说明
图1描绘了等离子体处理装置的喷淋头电极总成和衬底支座的一种实施方式的一部分。
图2显示了图1中的区域A的放大视图。
图3A是图2中的热边缘环的俯视图。
图3B是图2中的热边缘环的立体图。
图3C是图2中的热边缘环的剖面视图。
图4是图3C中的区域A的放大视图。
图5A是具有改版结构的热边缘环的俯视图而图5B是图5A中显示的边缘环的剖面视图。
具体实施方式
随着集成电路器件在物理尺寸和工作电压两方面的不断缩小,其相关制造成品率变得对微粒和金属杂质污染越发敏感。因而,制造具有更小物理尺寸的集成电路器件要求微粒和金属污染的水平比以前认为可接受的水平更少。
集成电路器件的制造包括等离子体处理室的使用。等离子体处理室可以被配置为蚀刻半导体衬底的选定的层。这种处理室被配置为接收工艺气体,同时向该处理室中的一个或更多电极施加射频(RF)电力。还要对特定的工艺控制该处理室内部的压强。在向该电极施加期望的射频电力后,该室中的工艺气体被激活从而形 成等离子体。如此产生等离子体以执行对该半导体衬底的选定的层的所需的蚀刻。
等离子体处理室的设计人员所面临的一个挑战是,等离子体蚀刻状况对暴露于该等离子体的处理室表面形成严重的离子轰击。这种离子轰击,与等离子体化学物质和/或蚀刻副产品相结合,可能产生该处理室的等离子体暴露表面的明显的侵蚀、锈蚀和锈蚀-侵蚀。结果是,表面材料被物理和/或化学攻击(包括侵蚀、锈蚀和/或锈蚀-侵蚀)除去。这种攻击带来问题,包括很短的部件寿命、更长的部件成本、微粒污染、衬底上过渡金属污染和工艺偏差。具有相对短的寿命的部件通常被称为易耗品。易耗部件的短寿命增加了持有成本。
另一个挑战是控制跨越半导体衬底(例如,硅衬底)的蚀刻速率一致性,尤其是使得在该衬底中心的蚀刻速率等于在边缘的蚀刻速率。因此,优选地设计衬底边界条件以实现衬底上参数的一致性,这些参数比如是工艺气体成分、工艺气体压强、衬底的温度、射频电力和等离子体密度。
一些等离子体处理室被设计为具有施加到垫起静电卡持电极的接电电极上,两者都被结合到衬底支座中,该衬底支座支撑经受等离子体处理的半导体衬底。然而,因为该衬底的外缘可能伸出该下电极和/或从接电电极穿过该静电卡持电极和衬底到该等离子体的射频阻抗路径可能不同于从该接电电极的外侧部分到该等离子体的射频阻抗路径,在该衬底边缘带来的不一致的等离子体密度可能导致对该衬底的不一致的处理。
为了减轻这种不一致性,热边缘环和下垫的射频耦合环已经被实现为围绕该衬底贴合。通过在经受等离子体处理的衬底的中心和边缘提供类似的射频阻抗路径,可以实现更好的等离子体一 致性。通过选择该射频耦合环的材料和/或尺寸,可以操控该射频阻抗路径。
该热边缘环保护该射频耦合环免受等离子体攻击。热边缘环是一种易耗部件,并且需要定期清洁或替换。理想情况是,延长该热边缘环的寿命以增加清洁或替换间的平均时间并减少持有成本。本文描述了一种具有更长射频寿命的热边缘环。
图1描绘了用于等离子体处理室的喷淋头电极总成110的一个示例性实施方式,半导体衬底(例如硅衬底)在该处理室中被处理。喷淋头电极总成110包括喷淋头电极,喷淋头电极包括上电极112、固定于上电极112的背衬元件114和热控制板116。这种布置的细节可以在公开号为2008/0308228、2008/0090417和2005/0733160的共同转让的美国专利公开中找到,将其通过参考并入本文。包括下电极和静电卡持电极(例如,静电卡盘)的衬底支座118(图1中只显示了它的一部分)被定位在该等离子体处理室中的上电极112下方。经受等离子体处理的衬底120被静电卡持到衬底支座118(例如静电卡盘)的衬底支撑表面122上。
在图示实施方式中,该喷淋头电极的上电极112包括由任何合适材料或材料组合(比如高纯度单晶硅、多晶硅、碳化硅(SiC))制成的内部电极元件124和可选的外部电极元件126。内部电极元件124优选地是圆柱板(例如,由硅组成的板)。该内部电极元件124可具有小于、等于或大于待处理衬底的直径,例如,直到12英寸(300毫米)或更大,如果该板是由硅组成的话。在一个优选实施方式中,喷淋头电极总成110足够大以处理很大的衬底,比如具有300毫米或更大直径的半导体衬底。对于300毫米衬底,上电极112的直径最小是300毫米。然而,该喷淋头电极总成的尺寸可以适于处理其它衬底尺寸或具有非圆形结构的衬底。
在图示实施方式中,内部电极元件124比衬底120更宽。为了处理300毫米衬底,提供外部电极元件126以将上电极112的直径从约15英寸扩展到约17英寸。外部电极元件126可以是连续元件(例如,连续多晶硅环),或分段元件(例如,包括布置成环形结构的2-6个独立的片段,比如由硅组成的片段)。在包括多个片段的外部电极元件126的上电极112的实施方式中,各片段优选地具有边缘,这些边缘彼此重叠以保护下面的粘合材料免于暴露于等离子体。这种布置的细节可以在公开号为2007/0187038的共同转让的美国专利公开中发现,将其通过参考并入本文。
内部电极元件124优选地包括多个延伸穿过并对应于在该背衬元件114中形成的多个气体通道130的多个气体通道128以将工艺气体注射到上电极112和衬底支座118之间的空间。背衬元件114包括多个气室(plenum)132以将工艺气体分别分布到内部电极元件124和背衬元件114中的气体通道128和130。
硅是用于内部电极元件124和外部电极元件126的等离子体暴露表面的优选材料。高纯度、单晶硅最小化了等离子体处理过程中衬底的污染并且在等离子体处理过程中是平稳地磨损的,从而最少化了微粒。可用于上电极112的等离子体暴露表面的替代材料包括例如多晶硅、SiC或AlN。在图示实施方式中,背衬元件114包括附着于内部电极124的背衬板134和附着于外部电极126的背衬环136,其围绕背衬板134的外缘延伸。在该实施方式中,内部电极元件124与背衬板134共同延伸,而外部电极元件126与其周围的背衬环136共同延伸。然而,背衬板134可以延伸超出内部电极元件124从而单个背衬板可用于支撑内部电极元件124和外部电极元件126。内部电极元件124和外部电极元件126优选地通过粘合材料和/或机械紧固件附着于背衬元件114。
背衬板130和背衬环136优选地是由与用于处理等离子体处理室中的半导体衬底的工艺气体化学相容、并且导电导热的材料制成的。可用于制造背衬元件114的示例性的合适材料包括铝、铝合金、石墨和SiC。
上电极112可以通过合适的导电导热弹性体(elastomeric)粘合材料附着于背衬板134和背衬环136,该粘合材料适应热应力并在上电极112和背衬板134和背衬环136之间传递热和电能。使用弹性体将电极总成的表面粘合起来例如在共同拥有的美国专利6,073,577中描述过,其内容通过参考全部并入本文。
在电容耦合等离子体处理室中,除了接地电极之外还可以使用次级接地。例如,衬底支座118可以包括下电极,给该下电极供应一个或更多频率的射频能量,而工艺气体可以通过喷淋头电极112提供到该室的内部,其中喷淋头电极112是接地上电极。次级地,位于衬底支座118中的下电极的外部,可包括电气接地部分,该部分通常在包含待处理的衬底120但是由热边缘环138与该衬底120隔开的平面中延伸。热边缘环138可以是导电或半导电材料,其在等离子体产生过程中会被加热。
为了控制衬底120上的蚀刻速率的一致性并将该衬底中心的蚀刻速率与该衬底边缘的蚀刻速率匹配,衬底边界条件优选地被设计为确保在该衬底边缘的化工品暴露、工艺压强和射频场强方面跨越整个衬底的连续性。为了最小化衬底污染,热边缘环138是用与该衬底本身相容的材料制成的。热边缘环138的材料主要是低电阻率的硼掺杂单晶硅,电阻率在约5和100mω·cm之间。
图2描绘了安装在衬底支座218上的热边缘环238的附近区域。衬底支座218包括外竖直侧壁218A、环形支撑表面218B和衬底支撑表面222。外竖直侧壁218A从环形支撑表面218B向上延伸; 而衬底支撑表面222是圆形的并从外竖直侧壁218A向内延伸。当衬底120被放到衬底支撑表面222上,衬底120伸出衬底支撑表面222,从而衬底120的边缘延伸超出外竖直侧壁218A并在热边缘环238上方。热边缘环238被配置为被支撑在放置在环形支撑表面218B上的射频耦合环240上。
图3A、3B、3C和4显示了热边缘环238的一个实施方式的细节。热边缘环238是环形本体,该环形本体具有内表面238C、外表面238D、上表面238A、下表面238B、在上表面238A和内表面238C之间的台阶238E,以及在下表面238B和外表面238D之间的台阶238F。下表面238B是基本上垂直于热边缘环238的中心轴的环形表面。内表面238C基本上平行于热边缘环238的中心轴,从下表面238B的内沿向上延伸约0.12英寸(本文使用的“约”意思是±10%),并且具有约11.7英寸的直径。台阶238E具有水平表面238Ea和竖直表面238Eb。水平表面238Ea基本上垂直于热边缘环238的中心轴,从内表面238C的上沿向外延伸约0.1英寸,并具有约11.9英寸的外径。竖直表面238Eb基本上平行于热边缘环238的中心轴,从水平表面238Ea的外沿向上延伸约0.075英寸。台阶238F具有水平表面238Fa和竖直表面238Fb。竖直表面238Fb基本上平行于热边缘环238的中心轴,从下表面238B的外沿向上延伸约0.11英寸,并具有约13.3英寸的直径。水平表面238Fa基本上垂直于热边缘环238的中心轴,从竖直表面238Fb的上沿向外延伸,并具有约13.4英寸的外径。外表面238D基本上平行于热边缘环238的中心轴,从水平表面238Fa的外沿向上延伸约0.10英寸。上表面238A是从竖直表面238Eb的上沿延伸到外表面238D的上沿的截断锥形表面。上表面238A的截断锥形表面的张角是约177°。热边缘环238上的表面238A、238D、238Fa、238Fb、238B、238C、238Ea和238Eb之间的内和外拐角优选地是圆滑(rounded)到半径在约0.002和0.05英寸之间。
热边缘环238的倾斜上表面238A使等离子体包层(plasma sheath)的形状使得热边缘环238的寿命被最大地延长。上表面238A的截断锥形表面的最优张角可以根据在该室中执行的等离子体工艺而变化。例如,在用于使用不同的蚀刻气体化学物质进行等离子体蚀刻以蚀刻半导体衬底上的不同的层的各种功率级,该张角可以被设定在约175°到179°的角度。
在装备有热边缘环238的等离子体处理室中处理半导体衬底的过程中,该衬底被支撑在衬底支座218上,衬底支座218由热边缘环238围绕。工艺气体被引入该等离子体处理室,被激励到等离子态以处理该衬底。在一个实施方式中,该处理可包括导电或电介质材料的沉积。在另一个实施方式中,处理该衬底可以包括金属、电介质的高密度等离子体蚀刻或光刻胶剥离。例如,处理该衬底可以包括使用碳氟化合物和/或碳氟氢化合物刻蚀气体在电介质材料中蚀刻开口,然后进行原地等离子体清洁。
根据进一步的实施方式,该热边缘环可以是由碳化硅(SiC),优选地是用化学气相沉积(CVD)形成的高纯度SiC(纯度大于99.9%,优选地大于99.9995%)制成的。该CVD SiC的电阻率优选地小于5000ohm-cm。例如,该电阻率可以是1-5000ohm-cm,例如,80-100ohm-cm、1-20ohm-cm或小于0.1ohm-cm。
如图5A中所示,具有边缘环238的尺寸和结构的热边缘环300可进一步包括在倾斜的上表面304和下表面306之间延伸的透孔(through hole)302。透孔302可有约0.3英寸的均匀直径,该孔的中心离热边缘环300的中心约6.4英寸。图5B是热边缘环300在孔302的位置的剖面。孔302可以包括在其上缘的0.005到0.015英寸的半径以及在其下缘的0.010英寸宽的45°倒角。热边缘环300还可包括在其内沿310上的平直边缘308。例如,内沿310可以有11.6到11.7英寸 的直径而平直边缘308可位于离边缘环300的中心约5.8英寸处。孔302可以略微偏离平直边缘308的中心。例如,孔302可以对着平直边缘308的中心,其中孔302的中心从平直边缘308的中心点偏离约2°。平直边缘308位于与热边缘环300的中心轴平行的轴平面中,其中该轴平面垂直于穿过热边缘环300的中心的径向线。孔302接收捡拾销(pick-up pin),该捡拾销提供经受等离子体处理的晶圆上的电偏置的反馈。平直边缘308用于对准具有平直边缘的晶圆以进行晶圆的对准和精确的定向。
尽管参考具体实施方式对具有延长寿命的热边缘环进行了详细描述,然而对本领域的技术人员来说,显然,可以做出各种变化和修改,并使用等同,而不违背所附权利要求的范围。
Claims (11)
1.一种被配置为围绕等离子体处理室中的半导体衬底的热边缘环,等离子体在所述等离子体处理室中产生并被用于处理所述半导体衬底,所述等离子体处理室包含:包含在向外延伸的环形支撑表面和圆形衬底支撑表面之间延伸的竖直侧壁的衬底支座,所述衬底支座被配置为所述半导体衬底被支撑在所述衬底支撑表面上而所述半导体衬底的伸出边缘延伸超出所述外竖直侧壁;支撑在所述环形支撑表面上的射频(RF)耦合环;
以及支撑在所述射频耦合环上的所述热边缘环;所述热边缘环包括环形本体,所述环形本体包含
被配置为被支撑在所述射频耦合环上的下表面;
从所述下表面的内沿向上延伸并围绕所述竖直侧壁的内表面;
从所述内表面的上沿向外延伸并从倾斜上表面的内沿向下延伸、并被配置为垫起所述半导体衬底的所述伸出边缘的第一台阶;
包含从所述第一台阶的上沿向外并向上延伸的截断锥形表面的所述倾斜上表面;
从所述倾斜上表面的外沿向下延伸的外表面;以及
从所述外表面的下沿向内延伸并从所述下表面的外沿向上延伸的第二台阶。
2.如权利要求1所述的热边缘环,其中:
所述内表面具有11.7英寸的直径;
所述倾斜上表面具有0.75英寸的宽度;
所述第一台阶具有外径为11.9英寸、基本上垂直于所述热边缘环的中心轴并从所述内表面的上沿向外延伸的水平表面;
所述第一台阶具有高度为0.075英寸、基本上平行于所述热边缘环的所述中心轴并从所述水平表面的外沿向上延伸到所述倾斜上表面的内沿的竖直表面;
所述倾斜上表面的所述截断锥形表面的张角是175°到179°。
3.如权利要求1所述的热边缘环,其中:
所述外表面具有13.4英寸的直径;
所述第二台阶具有高度为0.11英寸、基本上平行于所述热边缘环的所述中心轴并从所述下表面的外沿向上延伸的竖直表面;
所述第二台阶具有内径为13.3英寸、基本上垂直于所述热边缘环的中心轴并从所述竖直表面的上沿向外延伸到所述外表面的下沿的水平表面。
4.如权利要求1所述的热边缘环,其中所述倾斜上表面的所述截断锥形表面的张角是177°。
5.如权利要求1所述的热边缘环,主要由电阻率在5和100mΩ·cm之间的低电阻率的硼掺杂单晶硅组成。
6.如权利要求1所述的热边缘环,主要由碳化硅组成。
7.如权利要求1所述的热边缘环,由具有5000ohm-cm或更小的电阻率的CVD SiC组成。
8.如权利要求1所述的热边缘环,进一步包含在沿着所述热边缘环的内沿的单个位置处的平直边缘和在所述热边缘环的所述倾斜上表面和所述下表面之间延伸的单个孔。
9.如权利要求8所述的热边缘环,其中所述孔具有0.3英寸的直径,所述孔的中心离所述热边缘环的所述中心6.4英寸,且所述平直边缘位于所述热边缘环的与所述孔的位置相对的侧面上,所述平直边缘离所述热边缘环的所述中心5.8英寸而所述平直边缘位于与所述热边缘环的中心轴平行的轴平面中,所述轴平面垂直于穿过所述热边缘环的所述中心的径向线。
10.一种等离子体处理室,包含:
包含在向外延伸的环形支撑表面和圆形衬底支撑表面之间延伸的竖直侧壁的衬底支座,所述衬底支座被配置为半导体衬底被支撑在所述衬底支撑表面上而所述半导体衬底的伸出边缘向外延伸超出所述竖直侧壁;
支撑在所述环形支撑表面上的射频耦合环;以及
支撑在所述射频耦合环上的根据权利要求1所述的热边缘环。
11.如权利要求10所述的等离子体处理室,其中所述衬底支座进一步包含能操作以卡持所述衬底支撑表面上的所述半导体衬底的静电卡盘。
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DE (1) | DE202010014805U1 (zh) |
FR (1) | FR2952226B1 (zh) |
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SG170717A1 (en) | 2011-05-30 |
FR2952226B1 (fr) | 2018-05-04 |
KR200476554Y1 (ko) | 2015-03-09 |
MY152425A (en) | 2014-09-30 |
DE202010014805U1 (de) | 2011-02-17 |
TWM410330U (en) | 2011-08-21 |
US8084375B2 (en) | 2011-12-27 |
US20110104884A1 (en) | 2011-05-05 |
KR20110004609U (ko) | 2011-05-11 |
JP3168600U (ja) | 2011-06-23 |
FR2952226A1 (fr) | 2011-05-06 |
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