CN206758401U - 控制电容耦合等离子体工艺设备的边缘环的射频振幅 - Google Patents

控制电容耦合等离子体工艺设备的边缘环的射频振幅 Download PDF

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CN206758401U
CN206758401U CN201720089716.2U CN201720089716U CN206758401U CN 206758401 U CN206758401 U CN 206758401U CN 201720089716 U CN201720089716 U CN 201720089716U CN 206758401 U CN206758401 U CN 206758401U
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J·罗杰斯
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Applied Materials Inc
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Abstract

本实用新型总体上涉及控制边缘环的射频(RF)振幅的装置和方法。装置和方法包括通过可变电容器耦接到接地的电极。所述电极可以是环形的并且嵌入在基板支撑件中，所述基板支撑件包括静电卡盘。所述电极可定位于基板和/或所述边缘环的周边下方。当等离子体壳层由于边缘环侵蚀而相邻于所述边缘环下降时，调整可变电容器的电容以便影响靠近所述基板边缘的RF振幅。经由所述电极和可变电容器对RF振幅的调整引起所述基板周边附近的等离子体壳层的调整。

Description

控制电容耦合等离子体工艺设备的边缘环的射频振幅
技术领域
本公开的方面总体上涉及用于控制处理腔室中的边缘环的RF振幅的装置和方法。
背景技术
边缘环是在处理腔室中在处理期间围绕基板(诸如半导体晶片)的周边的圆形部件。由于边缘环在处理腔室内暴露于等离子体，所述边缘环可能遭受侵蚀并且需要在预定时间间隔之后更换或需要其他预防性维护。当所述边缘环被侵蚀太多时，基板边缘处的等离子体壳层下降并且改变基板边缘处的等离子体处理特性。等离子体处理特性的改变在基板边缘处引起不期望的处理效果，从而缩小了基板边缘附近的可用实际面积。
因此，需要解决边缘环侵蚀的装置和方法。
实用新型内容
在一个方面中，基板支撑件包括：静电卡盘，所述静电卡盘具有嵌入其中的一或多个卡紧电极以便将基板卡紧到所述静电卡盘；陶瓷层，所述陶瓷层设置在所述静电卡盘上方；陶瓷环，所述陶瓷环绕所述陶瓷层定位；电极，所述电极嵌入在所述陶瓷环内；及可变电容器，所述可变电容器通过一或多个传输线耦接到所述电极。
在另一实施方式中，处理腔室包括：腔室主体；盖，所述盖设置在所述腔室主体上；电感耦合等离子体装置，所述电感耦合等离子体装置定位于所述盖上方；及基板支撑件，所述基板支撑件定位于所述腔室主体内，所述基板支撑件包括：静电卡盘，所述静电卡盘具有嵌入其中的一或多个卡紧电极以便将基板卡紧到所述静电卡盘；陶瓷层，所述陶瓷层设置在所述静电卡盘上方；陶瓷环，所述陶瓷环绕所述陶瓷层定位；电极，所述电极嵌入在所述陶瓷环内，所述电极通过一或多个传输线耦接到可变电容器。
在另一方面中，处理基板的方法包括以下步骤：使用等离子体壳层来处理预定数量的基板，从而引起边缘环的侵蚀；在侵蚀之后增大边缘环处的RF电压来重新定位所述等离子体壳层；及在增大RF电压之后处理额外的基板以改变所述边缘环的侵蚀。
附图说明
因此，为了能够详细理解本公开的上述特征结构所用方式，可以参考各个实施方式更具体的描述上文所简要概述的本公开，所述实施方式中的一些示出于附图中。然而，应当注意，附图仅示出本公开的示例性方面，并且因此不应视为限制本公开的范围，且本公开可允许其他等效实施方式。
图1是根据本公开的一个方面的处理腔室的示意剖面图。
图2A和图2B示出了如图1所示的基板支撑件的放大示意图。
图3A至图3C是根据本公开的方面的相对于基板周边的等离子体壳层的示意图。
图4A和图4B示出了根据本公开的一个方面的示意电路图。
图5是根据本公开的一个方面示出处理基板的方法的流程图。
为了便于理解，在尽可能的情况下，使用相同的附图标记来标示图中共有的相同元素。可以预期一个实施方式的元素和特征可以有益地并入其他实施方式中而无须赘述。
具体实施方式
本公开总体上涉及控制边缘环的RF振幅的装置和方法。装置和方法包括通过可变电容器耦接到接地的电极。所述电极可以是环形的并且嵌入在基板支撑件中，所述基板支撑件包括静电卡盘。电极可定位于基板和/或所述边缘环的周边下方。当等离子体壳层由于边缘环侵蚀而相邻于所述边缘环下降时，调整可变电容器的电容以便影响靠近基板边缘的RF振幅。经由电极和可变电容器对RF振幅的调整产生基板周边附近的等离子体壳层的调整。
图1是根据本公开的一个方面的处理腔室100的示意剖面图。处理腔室100包括腔室主体101和设置在其上的盖103，腔室主体101和盖103一起限定内部容积。腔室主体101通常耦接到电接地107。基板支撑件111设置在所述内部容积内以支撑其上的基板109。处理腔室100亦包括用于在处理腔室100内产生等离子体区域118的电感耦合等离子体装置102，及被调适成控制处理腔室100的各方面的控制器155。
基板支撑件111包括通过匹配网络120耦接到偏压源119的一或多个电极134，及通过可变电容器140耦接到接地的圆形电极139。电感耦合等离子体装置102通常设置在盖103上方并且被配置成将RF功率电感耦合到处理腔室100中。电感耦合等离子体装置102包括设置在盖103上方的第一线圈110和第二线圈112。可以调整每个线圈110、线圈112的相对位置、直径比和/或每个线圈110、线圈112中的匝数，以控制例如等离子体区域118的轮廓或密度。第一线圈110和第二线圈112的每一者经RF馈送结构106通过匹配网络114耦接到RF电源108。在一个实例中，RF电源108可以能够在50kHz至13.56MHz的范围内以可调谐频率产生高达约4000W功率。然而，可以依照特定应用的要求提供其他频率和功率。
在一些方面中，可在RF馈送结构106和RF电源108之间提供功率分配器105，诸如分配电容器，以控制提供到相应的第一线圈110和第二线圈112的RF功率的相对量。在一些方面中，功率分配器105可并入匹配网络114中。
加热器元件113可以设置在盖103的顶上，以便于加热处理腔室100的内部。加热器元件113可以设置在盖103与第一线圈110和第二线圈112之间。在一些方面中，加热器元件113可以包括电阻加热元件，并且可以耦接到电源115，诸如AC电源，所述电源被配置成提供足够的能量以将加热器元件113的温度控制在期望的范围内。
在操作期间，基板109(诸如半导体晶片或适宜等离子体处理的其他基板)可位于基板支撑件111上，并且可以通过进入端口117从气体面板116供应处理气体。通过将功率从RF电源108施加到第一线圈110和第二线圈112，可以将处理气体点燃到处理腔室100中的等离子体区域118中。在一些方面中，来自偏压源119(诸如RF源或成形脉冲源)的功率也可以通过匹配网络120提供到基板支撑件111内的电极134。可以使用阀121和真空泵122控制处理腔室100的内部的压力。腔室主体101的温度可以使用含有流体的导管(未示出)来控制，所述导管贯穿腔室主体101。
处理腔室100包括控制器155以在处理期间控制处理腔室100的各方面。控制器155包括中央处理单元(central processing unit；CPU)123、存储器124及用于CPU 123的支持电路125。控制器155便于控制处理腔室100的部件。控制器155可以是在用于控制各种腔室和子处理器的工业设置中使用的通用计算机的任何形式的一种。存储器124存储可以以本文所述的方式执行或调用以控制处理腔室100的操作的软件(源码或目标码)。
图2A和图2B示出了如图1所示的基板支撑件111的放大示意图。基板支撑件111包括围绕绝缘层227的接地板226、设备板228及组装成竖直堆叠的静电卡盘229。石英管环230环绕设备板228和静电卡盘229以使RF热静电卡盘229与接地板226绝缘。等离子体遮罩231设置在石英管环230的上表面上以便于处理腔室100(图1所示)中的等离子体容纳。石英环232定位于等离子体遮罩231的上表面上并且包括用于啮合石英管环230的下凹部。
设备板228定位于接地板226的下部和静电卡盘229之间。设备板228包括一或多个通道233(示出了四个)，通过所述通道提供流体以便于基板支撑件111的温度控制。静电卡盘229包括嵌入在绝缘材料236中的多个电极134(示出了四个)。电极134耦接到偏压源119(图1所示)以便于将基板109卡紧到静电卡盘229的上表面。在一些方面中，电极134是通过匹配网络120耦接到偏压源119的阴极。偏压源119可说明性地是在例如约13.56MHz的频率下高达约1000W(但不限于约1000W)的RF能量的源，但对于特定的应用可以根据需要提供其他频率和功率。偏压源119能够产生连续功率或脉冲功率的任一者或两者。在一些方面中，偏压源119可以是DC源或脉冲DC源。在一些实施方式中，偏压源119可以能够提供多个频率，诸如13.56MHz和2MHz。
加热器235设置在静电卡盘229的上表面上以便于基板109的温度控制。加热器235可以是例如具有嵌入其中的多个电阻加热元件的电阻加热器。陶瓷层237(诸如碳化硅或氧化铝)设置在加热器235的上表面上方并且在加热器235和基板109之间提供保护界面。陶瓷环238围绕并且邻接陶瓷层237的径向向外的边缘。陶瓷环238可以由例如二氧化硅或氮化硅组成并且可以具有在约1毫米至约2毫米的范围内的厚度。圆形电极139嵌入在陶瓷环238中。圆形电极139可以定位于距离陶瓷环238的上表面约0.5毫米至约1毫米处，诸如约0.75毫米处。圆形电极139可以具有约3毫米至约20毫米(诸如约6毫米)的宽度。
圆形电极139定位于基板109的周边的径向外侧并且位于边缘环242下面。在一个实例中，圆形电极139可具有大于200毫米、或大于300毫米、或大于400毫米的内径。圆形电极139通过可变电容器140电耦接到接地。圆形电极139可通过多个传输线141(示出了一个)耦接到可变电容器140。举例而言，圆形电极139可通过围绕圆形电极139以均匀间隔(即，120度)隔开的三个传输线141，耦接到可变电容器140。在一个实例中，使用多个传输线141可以通过使传输线的任何不对称阶级更高和振幅更低来减少RF或温度非均匀性的发生。
边缘环242定位于陶瓷环238上方并且与陶瓷环238和陶瓷层237接触。在一个实例中，边缘环242可以由碳化硅、涂覆有碳化硅的石墨或低电阻率掺杂的硅形成。边缘环242的上表面接触石英环232的悬伸凸缘的下表面。边缘环242环绕基板109并且减少在基板109的径向向外边缘处的材料的不当蚀刻或沉积。在一个实例中，基板109与边缘环242径向分隔以便于将基板109与静电卡盘229密封。
参看图2B，在处理期间，等离子体壳层245可在基板109的表面上方形成。如上所述，处理条件可以侵蚀边缘环242的上部，引起对基板109的边缘的不期望的处理，诸如翻转。所述不期望的处理减少设备成品率并且影响基板与基板的均匀性。为减少这些不期望的效应，常规方法频繁地更换边缘环242。然而，从耗材材料的观点来看，边缘环242的频繁更换代价高昂，并且另外需要显著的停机时间。
与常规方法相反，本文所述的方面使用通过可变电容器140耦接到接地的圆形电极139来调整RF振幅，并且因此调整靠近边缘环242的等离子体壳层。由于陶瓷环238与常规方法相比相对减小的厚度，最初传送到静电卡盘229的RF功率具有与边缘环242耦合的高RF。换句话说，在边缘环242上的RF振幅可以高于在基板109上的RF振幅。可变电容器140的电容的调整被增加到足以使在边缘环242处的RF电压与基板109相当。当边缘环242被侵蚀时，可以减小RF电容以增加RF振幅，并且因此增加所述壳层厚度以将壳层的顶部保持在大致相同的位置。RF振幅的调整由此便于继续使用被侵蚀的边缘环，同时减轻对基板109的不期望的处理效果。
在一个可选方面中，可在陶瓷环238的上表面和边缘环242的下表面之间设置间隙253。可以使用间隙253以减少在圆形电极139和等离子体壳层245之间的耦接。可以选择间隙253的厚度以提供期望的去耦量。在另一方面中，可以预想的是，圆形电极139可以具有另一形状，或可以包括多个不同的电极，所述电极可布置成期望形状或配置。
除如上所述的实施方式之外，也设想了本公开的其他实施方式。在一个实例中，传输线141的长度在至少一个频率中可以具有λ(波长)除以2(例如，λ/2)的长度以促进所匹配的阻抗。在另一方面中，可以预想的是，根据需要，可以选择电极139的宽度以增加或减小与边缘环242的电耦合。在另一实施方式中，可以预想的是可以省略可选的间隙253。在另一方面中，可以预想的是，导电热垫片(例如，基于硅树脂的热垫片)可占据间隙253。在另一方面中，可变电容器140可以耦接到RF电源108而非接地。在这样的方面中，可变电容器140将便于电容耦合的调整，而非如上所述的寄生效应。
图3A至图3C是根据本公开的方面的相对于基板109周边的等离子体壳层245的示意图。图3A示出了在边缘环242的侵蚀之前相对于边缘环242和基板109的等离子体壳层245。等离子体壳层245是等离子体中的层，等离子体壳层245具有更大的正离子密度，并且因此具有更大的总过量正电荷，平衡与其接触的材料的表面上的相反负电荷。如图3A示出，边缘环242和基板109的上表面在边缘环242侵蚀之前大体上共面。在边缘环242侵蚀之前，等离子体壳层245与边缘环242和基板109的上表面平行并且与边缘环242和基板109的上表面等间距分隔。在图3A中示出的等离子体壳层245的轮廓引起基板109的均匀处理，特别是在其径向向外边缘的附近。
在处理预定数量的基板之后，所述处理腔室中的条件引起边缘环242的不当侵蚀。图3B示出了被侵蚀的边缘环242。在一个实例中，边缘环242的上表面可以被侵蚀掉，从而减小边缘环242的厚度。被侵蚀的边缘环242不再与基板109共享共面的上表面。由于在边缘环242和等离子体中的带电粒子之间的相互作用，等离子体壳层245的轮廓在存在被侵蚀的边缘环242的情况下改变。如图3B所示，等离子体壳层245在基板109和边缘环242的界面处下降，以与基板109相比保持与边缘环242的表面等距的间隔。等离子体壳层245的轮廓可引起基板109的径向向外边缘的“圆化”或其他不期望的处理。所述基板边缘的圆化减少了基板109的可用实际面积，从而降低了每个基板的设备成品率。这种不期望的圆化通常可称为“翻转效应”。在常规系统中，为了校正这种圆化问题，会更换被侵蚀的边缘环242，从而导致处理停机时间，同时增加耗材部件的成本。
相反，本公开的方面使用圆形电极139来调整RF振幅，并且因此调节等离子体壳层245在被侵蚀的边缘环242上方的位置。当调整可变电容器140(图2A所示)时，到圆形电极139的负电压改变。至接地的电容用作电容分压器的部分，所述电容分压器具有从静电卡盘229到边缘环242的固定电容耦合功率和至接地的可变电容。可以调整可变电容器140以缩减到边缘环242的更多或更少的RF功率，从而改变边缘环242上方的等离子体壳层245的高度。因此，可变电容器140和圆形电极139便于补偿被侵蚀的边缘环242。
通过可变电容器140和圆形电极139对被侵蚀的边缘环242的补偿导致等离子体壳层245的原始(例如，平面的)轮廓的重建。图3C示出邻近被侵蚀的边缘环242的被调整的等离子体壳层245。被调整的等离子体壳层245不会在基板109上引起“翻转效应”，从而防止对基板109的损坏，并且使基板109的可用实际面积最大化。此外，因为被侵蚀的边缘环242可以继续在侵蚀状态下使用，所以延长了预防性维护之间的时间，从而减少了处理停机时间。另外，被侵蚀的边缘环237需要较不频繁的更换，从而降低了耗材部件的费用。
图4A和图4B示出了根据本公开的一个方面的示意电路图。图4A和图4B示出了在基板支撑件111内的元件模型450。为了便于解释，图4A示出了覆盖在基板支撑件111的局部视图上的元件模型450。术语元件模型用于描述系统的部件之间的功能关系，例如，当使用具有小于10欧姆-厘米(Ω-cm)的电阻率的导电碳化硅层时。
在元件模型450中，从V0施加功率，例如来自偏压源119的静电卡盘229处的功率。电容C1通过加热器235和陶瓷环238存在于底板229和边缘环242之间。另外，电容C4通过加热器235和陶瓷环238的界面存在于底板229和电极139之间。电容C2存在于边缘环242和等离子体118之间。电容C2通过等离子体118耦合到接地。电容C3通过陶瓷238存在于边缘环242和电极139之间。可变电容器140通过一或多个传输线141耦接到接地以及耦接到电极139。可以调整可变电容器140以控制施加到电极139的RF电压，如上所述。应注意的是，元件模型450仅是电路的一个实例，并且也可以设想其它电路。
图5是根据本公开的一个方面示出处理基板的方法560的流程图。方法560开始于操作562。在操作560中，使用新的或翻新的边缘环处理预定数量的基板。所述新的或翻新的边缘环将等离子体壳层定位在已知位置，诸如平行于边缘环和正在处理的基板的上表面。然而，在处理预定数量的基板之后，边缘环遭受侵蚀，并且在处理期间改变所述等离子体壳层的位置。在此点处，方法560进行到操作564，并且调谐可调电容器以校正由于所述边缘环的侵蚀引起的所述等离子体壳层中的偏差。随后，在操作566中，处理额外的基板，同时通过所述可调电容器和所述电极将所述等离子体壳层保持在校正后的位置。然后可以重复操作564和操作566，直到所述边缘环不可用或者可调谐电容器不能提供足够的调整。
尽管图5描述了方法560的一个方面，但是也可以设想到其他方面。例如，在可以根据经验确定的预定数量的基板被处理之后，代替调整可调谐电容器，可监测所述等离子体壳层的边缘环厚度或位置以指示操作564何时发生。
本公开的优点包括调整等离子体壳层以代替更换腔室部件的能力，从而提高设备成品率，同时减少停机时间并减少耗材上的支出。另外，本文所述的方面允许独立于匹配网络来调整所述等离子体壳层，从而大大简化所述等离子体壳层的调整以及这样做所需的硬件。
在一些方面中，在设置在静电卡盘上的陶瓷层中形成电极。所述电极在一或多个位置耦接到高阻抗传输线。所述传输线通过可变电容器耦接到接地。所述电极用作在所述静电卡盘和所述电极的固定电容与至接地的可变电容之间的电容分压器的中心。当边缘环被侵蚀时可以减少通过所述可变电容器的电容，从而以期望的速度增加在边缘环处的RF振幅来补偿边缘环侵蚀。在边缘环处所增加的RF电压调整等离子体壳层的位置，以校正边缘环的侵蚀。在一些方面中，为了补偿极端边缘等离子体参数，根据需要，可以将在边缘环处的RF电压调整为大于或小于所述基板的RF电压。
虽然前文涉及本公开的诸方面，但可在不脱离本公开的基本范围之情况下设计本公开的其他和进一步实施方式，且本公开的范围由所附权利要求书确定。

Claims (18)

1.一种基板支撑件，所述基板支撑件包括：
静电卡盘，所述静电卡盘具有嵌入其中的一或多个卡紧电极以便将基板卡紧到所述静电卡盘；
陶瓷层，所述陶瓷层设置在所述静电卡盘上方；
陶瓷环，所述陶瓷环绕所述陶瓷层定位；
电极，所述电极嵌入在所述陶瓷环中；以及
可变电容器，所述可变电容器通过一或多个传输线耦接到所述电极。
2.如权利要求1所述的基板支撑件，其特征在于，嵌入在所述陶瓷环内的所述电极是环形的。
3.如权利要求1所述的基板支撑件，进一步包括：边缘环，所述边缘环设置在所述陶瓷环上并且与所述陶瓷环接触。
4.如权利要求3所述的基板支撑件，其特征在于，间隙保留在所述陶瓷环的上表面和与所述一或多个卡紧电极相邻的所述边缘环的下表面之间。
5.如权利要求1所述的基板支撑件，其特征在于，所述可变电容器电耦接到接地。
6.如权利要求1所述的基板支撑件，进一步包括：加热器，所述加热器定位于所述静电卡盘与所述陶瓷层之间。
7.如权利要求1所述的基板支撑件，其特征在于，所述陶瓷环包括二氧化硅或氮化硅。
8.一种处理腔室，所述处理腔室包括：
腔室主体；
盖，所述盖设置在所述腔室主体上；
电感耦合等离子体装置，所述电感耦合等离子体装置定位于所述盖上方；以及
基板支撑件，所述基板支撑件定位于所述腔室主体内，所述基板支撑件包括：
静电卡盘，所述静电卡盘具有嵌入其中的一或多个卡紧电极以便将基板卡紧到所述静电卡盘；
陶瓷层，所述陶瓷层设置在所述静电卡盘上方；
陶瓷环，所述陶瓷环绕所述陶瓷层定位；
电极，所述电极嵌入在所述陶瓷环中，所述电极通过一或多个传输线耦接到可变电容器。
9.如权利要求8所述的处理腔室，其特征在于，嵌入在所述陶瓷环内的所述电极是环形的。
10.如权利要求8所述的处理腔室，进一步包括：边缘环，所述边缘环设置在所述陶瓷环上并且与所述陶瓷环接触。
11.如权利要求10所述的处理腔室，其特征在于，间隙保留在所述陶瓷环的上表面和与所述一或多个卡紧电极相邻的所述边缘环的下表面之间。
12.如权利要求8所述的处理腔室，其特征在于，所述可变电容器电耦接到接地。
13.如权利要求8所述的处理腔室，进一步包括：加热器，所述加热器定位于所述静电卡盘与所述陶瓷层之间。
14.如权利要求8所述的处理腔室，其特征在于，所述陶瓷环包括二氧化硅或氮化硅。
15.如权利要求8所述的处理腔室，进一包括：偏压源，所述偏压源耦接到所述一或多个卡紧电极；及RF电源，所述RF电源耦接到所述电感耦合等离子体装置。
16.如权利要求8所述的处理腔室，其特征在于，所述一或多个传输线是三个传输线。
17.如权利要求16所述的处理腔室，其中所述一或多个传输线以等间隔耦接到嵌入在所述陶瓷环中的所述电极。
18.如权利要求8所述的处理腔室，其特征在于，嵌入在所述陶瓷环中的所述电极具有3毫米至20毫米的宽度。
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