TWM550908U - 基板支撐件及處理腔室 - Google Patents

基板支撐件及處理腔室 Download PDF

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TWM550908U
TWM550908U TW106201039U TW106201039U TWM550908U TW M550908 U TWM550908 U TW M550908U TW 106201039 U TW106201039 U TW 106201039U TW 106201039 U TW106201039 U TW 106201039U TW M550908 U TWM550908 U TW M550908U
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substrate
ring
processing chamber
edge ring
substrate support
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詹姆士 羅傑斯
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應用材料股份有限公司
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Description

基板支撐件及處理腔室
本揭示案的態樣大體而言係關於用於控制處理腔室中的邊緣環的RF振幅的裝置和方法。
邊緣環是在處理腔室中在處理期間圍繞基板(諸如半導體晶圓)的周邊的圓形部件。由於邊緣環在處理腔室內暴露於電漿，該邊緣環可能遭受侵蝕並且需要在預定時間間隔之後更換或需要其他預防性維護。當該邊緣環被侵蝕太多時，基板邊緣處的電漿殼層下降並且改變基板邊緣處的電漿處理特性。電漿處理特性的改變在基板邊緣處引起不期望的處理效果，從而縮小了基板邊緣附近的可用實際面積。
因此，需要解決邊緣環侵蝕的裝置和方法。
在一個態樣中，基板支撐件包括：靜電卡盤，該靜電卡盤具有嵌入其中的一或多個卡緊電極以便將基板卡緊到該靜電卡盤；陶瓷層，該陶瓷層設置在該靜電卡盤上方；陶瓷環，該陶瓷環繞該陶瓷層定位；電極，該電極嵌入在該陶瓷環內；及可變電容器，該可變電容器經由一或多個傳輸線耦接到該電極。
在另一態樣中，處理腔室包括：腔室主體；蓋，該蓋設置在該腔室主體上；電感耦合電漿裝置，該電感耦合電漿裝置定位於該蓋上方；及基板支撐件，該基板支撐件定位於該腔室主體內，該基板支撐件包括：靜電卡盤，該靜電卡盤具有嵌入其中的一或多個卡緊電極以便將基板卡緊到該靜電卡盤；陶瓷層，該陶瓷層設置在該靜電卡盤上方；陶瓷環，該陶瓷環繞該陶瓷層定位；電極，該電極嵌入在該陶瓷環內，該電極經由一或多個傳輸線耦接到可變電容器。
在另一態樣中，處理基板的方法包括以下步驟：使用電漿殼層來處理預定數量的基板，從而引起邊緣環的侵蝕；在侵蝕之後增大邊緣環處的RF電壓來重新定位該電漿殼層；及在增大RF電壓之後處理額外的基板以改變該邊緣環的侵蝕。
本揭示案大體而言係關於控制邊緣環的RF振幅的裝置和方法。裝置和方法包括經由可變電容器耦接到接地的電極。該電極可以是環形的並且嵌入在基板支撐件中，該基板支撐件包括靜電卡盤。電極可定位於基板和/或該邊緣環的周邊下方。當電漿殼層由於邊緣環侵蝕而相鄰於該邊緣環下降時，調整可變電容器的電容以便影響靠近基板邊緣的RF振幅。經由電極和可變電容器對RF振幅的調整產生基板周邊附近的電漿殼層的調整。
圖1是根據本揭示案的一個態樣的處理腔室100的示意剖面圖。處理腔室100包括腔室主體101和設置在其上的蓋103，腔室主體101和蓋103一起限定內部容積。腔室主體101通常耦接到電接地107。基板支撐件111設置在該內部容積內以支撐其上的基板109。處理腔室100亦包括用於在處理腔室100內產生電漿區域118的電感耦合電漿裝置102，及被調適成控制處理腔室100的各態樣的控制器155。
基板支撐件111包括經由匹配網路120耦接到偏壓源119的一或多個電極134，及經由可變電容器140耦接到接地的圓形電極139。電感耦合電漿裝置102通常設置在蓋103上方並且被配置成將RF功率電感耦合到處理腔室100中。電感耦合電漿裝置102包括設置在蓋103上方的第一線圈110和第二線圈112。可以調整每個線圈110、線圈112的相對位置、直徑比和/或每個線圈110、線圈112中的匝數，以控制例如電漿區域118的輪廓或密度。第一線圈110和第二線圈112的每一者經RF饋送結構106經由匹配網路114耦接到RF電源108。在一個實例中，RF電源108可以能夠在50 kHz至13.56 MHz的範圍內以可調諧頻率產生高達約4000W功率。然而，可以依照特定應用的要求提供其他頻率和功率。
在一些態樣中，可在RF饋送結構106和RF電源108之間提供功率分配器105，諸如分配電容器，以控制提供到相應的第一線圈110和第二線圈112的RF功率的相對量。在一些態樣中，功率分配器105可併入匹配網路114中。
加熱器元件113可以設置在蓋103的頂上，以便於加熱處理腔室100的內部。加熱器元件113可以設置在蓋103與第一線圈110和第二線圈112之間。在一些態樣中，加熱器元件113可以包括電阻加熱元件，並且可以耦接到電源115，諸如AC電源，該電源被配置成提供足夠的能量以將加熱器元件113的溫度控制在期望的範圍內。
在操作期間，基板109（諸如半導體晶圓或適宜電漿處理的其他基板）可位於基板支撐件111上，並且可以經由進入埠117從氣體面板116供應處理氣體。藉由將功率從RF電源108施加到第一線圈110和第二線圈112，可以將處理氣體點燃到處理腔室100中的電漿區域118中。在一些態樣中，來自偏壓源119（諸如RF源或成形脈衝源）的功率亦可以經由匹配網路120提供到基板支撐件111內的電極134。可以使用閥121和真空泵122控制處理腔室100的內部的壓力。腔室主體101的溫度可以使用含有流體的導管（未圖示）來控制，該等導管貫穿腔室主體101。
處理腔室100包括控制器155以在處理期間控制處理腔室100的各態樣。控制器155包括中央處理單元(central processing unit; CPU) 123、記憶體124及用於CPU 123的支持電路125。控制器155便於控制處理腔室100的部件。控制器155可以是在用於控制各種腔室和子處理器的工業設置中使用的通用電腦的任何形式的一種。記憶體124存儲可以以本文該等的方式執行或調用以控制處理腔室100的操作的軟體（源碼或目的碼）。
圖2A和圖2B圖示了如圖1所示的基板支撐件111的放大示意圖。基板支撐件111包括圍繞絕緣層227的接地板226、設備板228及組裝成豎直堆疊的靜電卡盤229。石英管環230環繞設備板228和靜電卡盤229以使RF熱靜電卡盤229與接地板226絕緣。電漿遮罩231設置在石英管環230的上表面上以便於處理腔室100（圖1所示）中的電漿容納。石英環232定位於電漿遮罩231的上表面上並且包括用於嚙合石英管環230的下凹部。
設備板228定位於接地板226的下部和靜電卡盤229之間。設備板228包括一或多個通道233（圖示了四個），經由該等通道提供流體以便於基板支撐件111的溫度控制。靜電卡盤229包括嵌入在絕緣材料236中的複數個電極134（圖示了四個）。電極134耦接到偏壓源119（圖1所示）以便於將基板109卡緊到靜電卡盤229的上表面。在一些態樣中，電極134是經由匹配網路120耦接到偏壓源119的陰極。偏壓源119可說明性地是在例如約13.56 MHz的頻率下高達約1000W（但不限於約1000 W）的RF能量的源，但對於特定的應用可以根據需要提供其他頻率和功率。偏壓源119能夠產生連續功率或脈衝功率的任一者或兩者。在一些態樣中，偏壓源119可以是DC源或脈衝DC源。在一些態樣中，偏壓源119可以能夠提供多個頻率，諸如13.56 MHz和2 MHz。
加熱器235設置在靜電卡盤229的上表面上以便於基板109的溫度控制。加熱器235可以是例如具有嵌入其中的複數個電阻加熱元件的電阻加熱器。陶瓷層237（諸如碳化矽或氧化鋁）設置在加熱器235的上表面上方並且在加熱器235和基板109之間提供保護介面。陶瓷環238圍繞並且鄰接陶瓷層237的徑向向外的邊緣。陶瓷環238可以由例如二氧化矽或氮化矽組成並且可以具有在約1毫米至約2毫米的範圍內的厚度。圓形電極139嵌入在陶瓷環238中。圓形電極139可以定位於距離陶瓷環238的上表面約0.5毫米至約1毫米處，諸如約0.75毫米處。圓形電極139可以具有約3毫米至約20毫米（諸如約6毫米）的寬度。
圓形電極139定位於基板109的周邊的徑向外側並且位於邊緣環242下方。在一個實例中，圓形電極139可具有大於200毫米、或大於300毫米、或大於400毫米的內徑。圓形電極139經由可變電容器140電耦接到接地。圓形電極139可經由多個傳輸線141（圖示了一個）耦接到可變電容器140。舉例而言，圓形電極139可經由圍繞圓形電極139以均勻間隔（即，120度）隔開的三個傳輸線141，耦接到可變電容器140。在一個實例中，使用多個傳輸線141可以藉由使傳輸線的任何不對稱階級更高和振幅更低來減少RF或溫度非均勻性的發生。
邊緣環242定位於陶瓷環238上方並且與陶瓷環238和陶瓷層237接觸。在一個實例中，邊緣環242可以由碳化矽、塗覆有碳化矽的石墨或低電阻率摻雜的矽形成。邊緣環242的上表面接觸石英環232的懸伸凸緣的下表面。邊緣環242環繞基板109並且減少在基板109的徑向向外邊緣處的材料的不當蝕刻或沉積。在一個實例中，基板109與邊緣環242徑向分隔以便於將基板109與靜電卡盤229密封。
參看圖2B，在處理期間，電漿殼層245可在基板109的表面上方形成。如上所述，處理條件可以侵蝕邊緣環242的上部，引起對基板109的邊緣的不期望的處理，諸如翻轉。該不期望的處理減少設備成品率並且影響基板與基板的均勻性。為減少該等不期望的效應，常規方法頻繁地更換邊緣環242。然而，從耗材材料的觀點來看，邊緣環242的頻繁更換代價高昂，並且另外需要顯著的停機時間。
與常規方法相反，本文所述的態樣使用經由可變電容器140耦接到接地的圓形電極139來調整RF振幅，並且因此調整靠近邊緣環242的電漿殼層。由於陶瓷環238與常規方法相比相對減小的厚度，最初傳送到靜電卡盤229的RF功率具有與邊緣環242耦合的高RF。換言之，在邊緣環242上的RF振幅可以高於在基板109上的RF振幅。可變電容器140的電容的調整被增加到足以使在邊緣環242處的RF電壓與基板109相當。當邊緣環242被侵蝕時，可以減小RF電容以增加RF振幅，並且因此增加該殼層厚度以將殼層的頂部保持在大致相同的位置。RF振幅的調整由此便於繼續使用被侵蝕的邊緣環，同時減輕對基板109的不期望的處理效果。
在一個可選態樣中，可在陶瓷環238的上表面和邊緣環242的下表面之間設置間隙253。可以使用間隙253以減少在圓形電極139和電漿殼層245之間的耦接。可以選擇間隙253的厚度以提供期望的去耦量。在另一態樣中，可以預想的是，圓形電極139可以具有另一形狀，或可以包括複數個不同的電極，該等電極可佈置成期望形狀或配置。
除如上所述的態樣之外，亦設想了本揭示案的其他態樣。在一個實例中，傳輸線141的長度在至少一個頻率中可以具有λ（波長）除以2（例如，λ/ 2）的長度以促進所匹配的阻抗。在另一態樣中，可以預想的是，根據需要，可以選擇電極139的寬度以增加或減小與邊緣環242的電耦合。在另一態樣中，可以預想的是可以省略可選的間隙253。在另一態樣中，可以預想的是，導電熱墊片（例如，基於矽樹脂的熱墊片）可佔據間隙253。在另一態樣中，可變電容器140可以耦接到RF電源108而非接地。在該態樣中，可變電容器140將便於電容耦合的調整，而非如上所述的寄生效應。
圖3A至圖3C是根據本揭示案的態樣的相對於基板109周邊的電漿殼層245的示意圖。圖3A圖示了在邊緣環242的侵蝕之前相對於邊緣環242和基板109的電漿殼層245。電漿殼層245是電漿中的層，電漿殼層245具有更大的正離子密度，並且因此具有更大的總過量正電荷，平衡與其接觸的材料的表面上的相反負電荷。如圖3A圖示，邊緣環242和基板109的上表面在邊緣環242侵蝕之前大體上共面。在邊緣環242侵蝕之前，電漿殼層245與邊緣環242和基板109的上表面平行並且與邊緣環242和基板109的上表面等間距分隔。在圖3A中圖示的電漿殼層245的輪廓引起基板109的均勻處理，特別是在其徑向向外邊緣的附近。
在處理預定數量的基板之後，該處理腔室中的條件引起邊緣環242的不當侵蝕。圖3B圖示了被侵蝕的邊緣環242。在一個實例中，邊緣環242的上表面可以被侵蝕掉，從而減小邊緣環242的厚度。被侵蝕的邊緣環242不再與基板109共用共面上表面。由於在邊緣環242和電漿中的帶電粒子之間的相互作用，電漿殼層245的輪廓在存在被侵蝕的邊緣環242的情況下改變。如圖3B所示，電漿殼層245在基板109和邊緣環242的介面處下降，以與基板109相比保持與邊緣環242的表面等距的間隔。電漿殼層245的輪廓可引起基板109的徑向向外邊緣的“圓化”或其他不期望的處理。該基板邊緣的圓化減少了基板109的可用實際面積，從而降低了每個基板的設備成品率。此種不期望的圓化通常可稱為“翻轉效應”。在常規系統中，為了校正此種圓化問題，會更換被侵蝕的邊緣環242，從而導致處理停機時間，同時增加耗材部件的成本。
相反，本揭示案的態樣使用圓形電極139來調整RF振幅，並且因此調節電漿殼層245在被侵蝕的邊緣環242上方的位置。當調整可變電容器140（圖2A所示）時，到圓形電極139的負電壓改變。至接地的電容用作電容分壓器的部分，該電容分壓器具有從靜電卡盤229到邊緣環242的固定電容耦合功率和至接地的可變電容。可以調整可變電容器140以縮減到邊緣環242的更多或更少的RF功率，從而改變邊緣環242上方的電漿殼層245的高度。因此，可變電容器140和圓形電極139便於補償被侵蝕的邊緣環242。
經由可變電容器140和圓形電極139對被侵蝕的邊緣環242的補償導致電漿殼層245的原始（例如，平面的）輪廓的重建。圖3C圖示鄰近被侵蝕的邊緣環242的被調整的電漿殼層245。被調整的電漿殼層245不會在基板109上引起“翻轉效應”，從而防止對基板109的損壞，並且使基板109的可用實際面積最大化。此外，因為被侵蝕的邊緣環242可以繼續在侵蝕狀態下使用，所以延長了預防性維護之間的時間，從而減少了處理停機時間。另外，被侵蝕的邊緣環237需要較不頻繁的更換，從而降低了耗材部件的費用。
圖4A和圖4B圖示了根據本揭示案的一個態樣的示意電路圖。圖4A和圖4B圖示了在基板支撐件111內的元件模型450。為了便於解釋，圖4A圖示了覆蓋在基板支撐件111的局部視圖上的元件模型450。術語元件模型用於描述系統的部件之間的功能關係，例如，當使用具有小於10歐姆-釐米（Ω-cm）的電阻率的導電碳化矽層時。
在元件模型450中，從V0施加功率，例如來自偏壓源119的靜電卡盤229處的功率。電容C1經由加熱器235和陶瓷環238存在於底板229和邊緣環242之間。另外，電容C4經由加熱器235和陶瓷環238的介面存在於底板229和電極139之間。電容C2存在於邊緣環242和電漿118之間。電容C2經由電漿118耦合到接地。電容C3經由陶瓷238存在於邊緣環242和電極139之間。可變電容器140經由一或多個傳輸線141耦接到接地以及耦接到電極139。可以調整可變電容器140以控制施加到電極139的RF電壓，如上所述。應注意的是，元件模型450僅是電路的一個實例，並且亦可以設想其它電路。
圖5是根據本揭示案的一個態樣圖示處理基板的方法560的流程圖。方法560開始於操作562。在操作560中，使用新的或翻新的邊緣環處理預定數量的基板。該新的或翻新的邊緣環將電漿殼層定位在已知位置，諸如平行於邊緣環和正在處理的基板的上表面。然而，在處理預定數量的基板之後，邊緣環遭受侵蝕，並且在處理期間改變該電漿殼層的位置。在此點處，方法560進行到操作564，並且調諧可調電容器以校正由於該邊緣環的侵蝕引起的該電漿殼層中的偏差。隨後，在操作566中，處理額外的基板，同時藉由該可調電容器和該電極將該電漿殼層保持在校正後的位置。隨後可以重複操作564和操作566，直到該邊緣環不可用或者可調諧電容器不能提供足夠的調整。
儘管圖5描述了方法560的一個態樣，但是亦可以設想到其他態樣。例如，在可以根據經驗確定的預定數量的基板被處理之後，代替調整可調諧電容器，可監測該電漿殼層的邊緣環厚度或位置以指示操作564何時發生。
本揭示案的優點包括調整電漿殼層以代替更換腔室部件的能力，從而提高設備成品率，同時減少停機時間並減少耗材上的支出。另外，本文所述的態樣允許獨立於匹配網路來調整該電漿殼層，從而大大簡化該電漿殼層的調整以及如此做所需的硬體。
在一些態樣中，在設置在靜電卡盤上的陶瓷層中形成電極。該電極在一或多個位置耦接到高阻抗傳輸線。該等傳輸線經由可變電容器耦接到接地。該電極用作在該靜電卡盤和該電極的固定電容與至接地的可變電容之間的電容分壓器的中心。當邊緣環被侵蝕時可以減少通過該可變電容器的電容，從而以期望的速度增加在邊緣環處的RF振幅來補償邊緣環侵蝕。在邊緣環處所增加的RF電壓調整電漿殼層的位置，以校正邊緣環的侵蝕。在一些態樣中，為了補償極端邊緣電漿參數，根據需要，可以將在邊緣環處的RF電壓調整為大於或小於該基板的RF電壓。
儘管前文涉及本揭示案的諸態樣，但可在不脫離本揭示案的基本範圍之情況下設計本揭示案的其他和進一步態樣，且本揭示案的範圍由所附權利要求書確定。
100‧‧‧處理腔室
101‧‧‧腔室主體
102‧‧‧電感耦合電漿裝置
103‧‧‧蓋
105‧‧‧功率分配器
106‧‧‧RF饋送結構
107‧‧‧電接地
108‧‧‧RF電源
109‧‧‧基板
110‧‧‧第一線圈
111‧‧‧基板支撐件
112‧‧‧第二線圈
113‧‧‧加熱器元件
114‧‧‧匹配網路
115‧‧‧電源
116‧‧‧氣體面板
117‧‧‧進入埠
118‧‧‧電漿區域
119‧‧‧偏壓源
120‧‧‧匹配網路
121‧‧‧閥
122‧‧‧真空泵
123‧‧‧中央處理單元(central processing unit; CPU)
124‧‧‧記憶體
125‧‧‧支持電路
134‧‧‧電極
139‧‧‧圓形電極
140‧‧‧可變電容器
141‧‧‧傳輸線
226‧‧‧接地板
227‧‧‧絕緣層
228‧‧‧設備板
229‧‧‧靜電卡盤
230‧‧‧石英管環
231‧‧‧電漿遮罩
232‧‧‧石英環
233‧‧‧通道
235‧‧‧加熱器
236‧‧‧絕緣材料
237‧‧‧陶瓷層
238‧‧‧陶瓷環
242‧‧‧邊緣環
245‧‧‧電漿殼層
253‧‧‧間隙
450‧‧‧元件模型
560‧‧‧方法
562‧‧‧步驟
564‧‧‧步驟
566‧‧‧步驟
因此，為了能夠詳細理解本揭示案的上述特徵結構所用方式，可以參考諸態樣更具體的描述上文所簡要概述的本揭示案，該等態樣中的一些圖示於附圖中。然而，應當注意，附圖僅圖示本揭示案的示例性態樣，並且因此不應視為限制本揭示案的範圍，且本揭示案可允許其他等效態樣。
圖1是根據本揭示案的一個態樣的處理腔室的示意剖面圖。
圖2A和圖2B圖示了如圖1所示的基板支撐件的放大示意圖。
圖3A至圖3C是根據本揭示案的態樣的相對於基板周邊的電漿殼層的示意圖。
圖4A和圖4B圖示了根據本揭示案的一個態樣的示意電路圖。
圖5是根據本揭示案的一個態樣圖示處理基板的方法的流程圖。
為了便於理解，在儘可能的情況下，使用相同的元件符號來標示圖中共用的相同元件。可以預期一個態樣的元件和特徵可以有益地併入其他態樣中而無須贅述。
109‧‧‧基板
134‧‧‧電極
139‧‧‧圓形電極
226‧‧‧接地板
228‧‧‧設備板
229‧‧‧靜電卡盤
230‧‧‧石英管環
231‧‧‧電漿遮罩
232‧‧‧石英環
235‧‧‧加熱器
236‧‧‧絕緣材料
237‧‧‧陶瓷層
238‧‧‧陶瓷環
242‧‧‧邊緣環
245‧‧‧電漿殼層
253‧‧‧間隙

Claims (18)

  1. 一種基板支撐件，該基板支撐件包括： 靜電卡盤，該靜電卡盤具有嵌入其中的一或多個卡緊電極以便將基板卡緊到該靜電卡盤； 陶瓷層，該陶瓷層設置在該靜電卡盤上方； 陶瓷環，該陶瓷環繞該陶瓷層定位； 電極，該電極嵌入在該陶瓷環中；以及 可變電容器，該可變電容器經由一或多個傳輸線耦接到該電極。
  2. 如請求項1所述的基板支撐件，其中嵌入在該陶瓷環內的該電極是環形的。
  3. 如請求項1所述的基板支撐件，進一步包括：邊緣環，該邊緣環設置在該陶瓷環上並且與該陶瓷環接觸。
  4. 如請求項3所述的基板支撐件，其中間隙保留在該陶瓷環的上表面和與該一或多個卡緊電極相鄰的該邊緣環的下表面之間。
  5. 如請求項1所述的基板支撐件，其中該可變電容器電耦接到接地。
  6. 如請求項1所述的基板支撐件，進一步包括：加熱器，該加熱器定位於該靜電卡盤與該碳化矽層之間。
  7. 如請求項1所述的基板支撐件，其中該陶瓷環包括二氧化矽或氮化矽。
  8. 一種處理腔室，該處理腔室包括： 腔室主體； 蓋，該蓋設置在該腔室主體上； 電感耦合電漿裝置，該電感耦合電漿裝置定位於該蓋上方；以及 基板支撐件，該基板支撐件定位於該腔室主體內，該基板支撐件包括： 靜電卡盤，該靜電卡盤具有嵌入其中的一或多個卡緊電極以便將基板卡緊到該靜電卡盤； 陶瓷層，該陶瓷層設置在該靜電卡盤上方； 陶瓷環，該陶瓷環繞該陶瓷層定位； 電極，該電極嵌入在該陶瓷環中，該電極經由一或多個傳輸線耦接到可變電容器。
  9. 如請求項8所述的處理腔室，其中嵌入在該陶瓷環內的該電極是環形的。
  10. 如請求項8所述的處理腔室，進一步包括：邊緣環，該邊緣環設置在該陶瓷環上並且與該陶瓷環接觸。
  11. 如請求項10所述的處理腔室，其中間隙保留在該陶瓷環的上表面和與該一或多個卡緊電極相鄰的該邊緣環的下表面之間。
  12. 如請求項8所述的處理腔室，其中該可變電容器電耦接到接地。
  13. 如請求項8所述的處理腔室，進一步包括：加熱器，該加熱器定位於該靜電卡盤與該碳化矽層之間。
  14. 如請求項8所述的處理腔室，其中該陶瓷環包括二氧化矽或氮化矽。
  15. 如請求項8所述的處理腔室，進一包括：偏壓源，該偏壓源耦接到該一或多個卡緊電極；及RF電源，該RF電源耦接到該電感耦合電漿裝置。
  16. 如請求項8所述的處理腔室，其中該一或多個傳輸線是三個傳輸線。
  17. 如請求項16所述的處理腔室，其中該一或多個傳輸線以等間隔耦接到嵌入在該陶瓷環中的該電極。
  18. 如請求項8所述的處理腔室，其中嵌入在該陶瓷環中的該電極具有約3毫米至約20毫米的寬度。
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