JP5762281B2 - Ｒｆ物理気相蒸着用処理キット - Google Patents

Ｒｆ物理気相蒸着用処理キット Download PDF

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Publication number
JP5762281B2
JP5762281B2 JP2011507660A JP2011507660A JP5762281B2 JP 5762281 B2 JP5762281 B2 JP 5762281B2 JP 2011507660 A JP2011507660 A JP 2011507660A JP 2011507660 A JP2011507660 A JP 2011507660A JP 5762281 B2 JP5762281 B2 JP 5762281B2
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band
shield
ring
cylindrical
chamber
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JP2011507660A
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Japanese (ja)
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JP2011520034A (ja
JP2011520034A5 (enExample
Inventor
ドニー ヤング
ドニー ヤング
ララ ハウリルチャク
ララ ハウリルチャク
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2011507660A 2008-05-02 2009-04-30 Ｒｆ物理気相蒸着用処理キット Active JP5762281B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5011208P 2008-05-02 2008-05-02
US61/050,112 2008-05-02
PCT/US2009/042387 WO2009135050A2 (en) 2008-05-02 2009-04-30 Process kit for rf physical vapor deposition

Publications (3)

Publication Number Publication Date
JP2011520034A JP2011520034A (ja) 2011-07-14
JP2011520034A5 JP2011520034A5 (enExample) 2012-06-21
JP5762281B2 true JP5762281B2 (ja) 2015-08-12

Family

ID=41255822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011507660A Active JP5762281B2 (ja) 2008-05-02 2009-04-30 Ｒｆ物理気相蒸着用処理キット

Country Status (6)

Country Link
US (2) US9123511B2 (enExample)
JP (1) JP5762281B2 (enExample)
KR (1) KR101511027B1 (enExample)
CN (1) CN102017077B (enExample)
TW (1) TWI494454B (enExample)
WO (1) WO2009135050A2 (enExample)

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US8580092B2 (en) 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
CN108359957A (zh) 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
JP5772499B2 (ja) * 2011-10-24 2015-09-02 旭硝子株式会社 Ｅｕｖリソグラフィ（ｅｕｖｌ）用反射型マスクブランクの製造方法およびｅｕｖｌ用反射層付基板の製造方法
CN103882390B (zh) * 2012-12-20 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及磁控溅射设备
WO2014159222A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring
US8865012B2 (en) 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
WO2015041978A1 (en) * 2013-09-17 2015-03-26 Applied Materials, Inc. Extended dark space shield
CN104862660B (zh) * 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
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KR102438139B1 (ko) * 2014-12-22 2022-08-29 어플라이드 머티어리얼스, 인코포레이티드 높은 처리량의 프로세싱 챔버를 위한 프로세스 키트
CN107548515B (zh) * 2015-04-24 2019-10-15 应用材料公司 包含流动隔离环的处理套组
CN108352297B (zh) * 2015-12-07 2023-04-28 应用材料公司 合并式盖环
CN109477207A (zh) 2016-09-23 2019-03-15 应用材料公司 溅射喷淋头
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
CN110838429B (zh) * 2018-08-15 2022-07-22 北京北方华创微电子装备有限公司 腔体内衬、等离子体反应腔室和等离子体设备
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
CN113035679B (zh) * 2019-12-24 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
US11670492B2 (en) * 2020-10-15 2023-06-06 Applied Materials, Inc. Chamber configurations and processes for particle control
CN115074679B (zh) * 2021-03-11 2025-02-11 台湾积体电路制造股份有限公司 形成半导体结构的方法和物理气相沉积装置及方法
CN114446495B (zh) * 2022-01-18 2024-08-23 大连理工大学 一种面向等离子体带收集脱落物的倒置样品台
CN117012605A (zh) * 2022-04-29 2023-11-07 中微半导体设备(上海)股份有限公司 等离子体处理装置、隔离环及其制作方法
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
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Also Published As

Publication number Publication date
US20120205241A1 (en) 2012-08-16
TWI494454B (zh) 2015-08-01
WO2009135050A3 (en) 2010-02-18
TW201000664A (en) 2010-01-01
WO2009135050A2 (en) 2009-11-05
CN102017077A (zh) 2011-04-13
US9123511B2 (en) 2015-09-01
KR20110021840A (ko) 2011-03-04
CN102017077B (zh) 2012-09-19
JP2011520034A (ja) 2011-07-14
KR101511027B1 (ko) 2015-04-10
US20090272647A1 (en) 2009-11-05
US8668815B2 (en) 2014-03-11

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