CN102017077B - 用于射频物理气相沉积的处理套组 - Google Patents

用于射频物理气相沉积的处理套组 Download PDF

Info

Publication number
CN102017077B
CN102017077B CN2009801158170A CN200980115817A CN102017077B CN 102017077 B CN102017077 B CN 102017077B CN 2009801158170 A CN2009801158170 A CN 2009801158170A CN 200980115817 A CN200980115817 A CN 200980115817A CN 102017077 B CN102017077 B CN 102017077B
Authority
CN
China
Prior art keywords
shield
ring
band
cylindrical
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801158170A
Other languages
English (en)
Chinese (zh)
Other versions
CN102017077A (zh
Inventor
东尼·杨
劳拉·郝勒查克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102017077A publication Critical patent/CN102017077A/zh
Application granted granted Critical
Publication of CN102017077B publication Critical patent/CN102017077B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2009801158170A 2008-05-02 2009-04-30 用于射频物理气相沉积的处理套组 Active CN102017077B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5011208P 2008-05-02 2008-05-02
US61/050,112 2008-05-02
PCT/US2009/042387 WO2009135050A2 (en) 2008-05-02 2009-04-30 Process kit for rf physical vapor deposition

Publications (2)

Publication Number Publication Date
CN102017077A CN102017077A (zh) 2011-04-13
CN102017077B true CN102017077B (zh) 2012-09-19

Family

ID=41255822

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801158170A Active CN102017077B (zh) 2008-05-02 2009-04-30 用于射频物理气相沉积的处理套组

Country Status (6)

Country Link
US (2) US9123511B2 (enExample)
JP (1) JP5762281B2 (enExample)
KR (1) KR101511027B1 (enExample)
CN (1) CN102017077B (enExample)
TW (1) TWI494454B (enExample)
WO (1) WO2009135050A2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900471B2 (en) * 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
KR20120089647A (ko) * 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 물리적 기상 증착을 위한 프로세스 키트
US8580092B2 (en) 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
CN108359957A (zh) 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
JP5772499B2 (ja) * 2011-10-24 2015-09-02 旭硝子株式会社 Ｅｕｖリソグラフィ（ｅｕｖｌ）用反射型マスクブランクの製造方法およびｅｕｖｌ用反射層付基板の製造方法
CN103882390B (zh) * 2012-12-20 2016-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及磁控溅射设备
WO2014159222A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring
US8865012B2 (en) 2013-03-14 2014-10-21 Applied Materials, Inc. Methods for processing a substrate using a selectively grounded and movable process kit ring
WO2015041978A1 (en) * 2013-09-17 2015-03-26 Applied Materials, Inc. Extended dark space shield
CN104862660B (zh) * 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
US9448261B2 (en) * 2014-04-11 2016-09-20 General Electric Company Systems and methods for reducing attenuation in current transducers
KR102438139B1 (ko) * 2014-12-22 2022-08-29 어플라이드 머티어리얼스, 인코포레이티드 높은 처리량의 프로세싱 챔버를 위한 프로세스 키트
CN107548515B (zh) * 2015-04-24 2019-10-15 应用材料公司 包含流动隔离环的处理套组
CN108352297B (zh) * 2015-12-07 2023-04-28 应用材料公司 合并式盖环
CN109477207A (zh) 2016-09-23 2019-03-15 应用材料公司 溅射喷淋头
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
CN110838429B (zh) * 2018-08-15 2022-07-22 北京北方华创微电子装备有限公司 腔体内衬、等离子体反应腔室和等离子体设备
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
CN113035679B (zh) * 2019-12-24 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
US11670492B2 (en) * 2020-10-15 2023-06-06 Applied Materials, Inc. Chamber configurations and processes for particle control
CN115074679B (zh) * 2021-03-11 2025-02-11 台湾积体电路制造股份有限公司 形成半导体结构的方法和物理气相沉积装置及方法
CN114446495B (zh) * 2022-01-18 2024-08-23 大连理工大学 一种面向等离子体带收集脱落物的倒置样品台
CN117012605A (zh) * 2022-04-29 2023-11-07 中微半导体设备(上海)股份有限公司 等离子体处理装置、隔离环及其制作方法
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW512180B (en) * 2000-09-21 2002-12-01 Promos Technologies Inc Method for maintaining the cleanness of a vacuum chamber of physical vapor deposition system

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202008A (en) * 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
KR100294062B1 (ko) * 1992-10-27 2001-10-24 조셉 제이. 스위니 웨이퍼 처리 챔버에서의 돔형 페데스탈용 클램프 링
JPH0734236A (ja) * 1993-07-19 1995-02-03 Canon Inc 直流スパッタリング装置およびスパッタリング方法
US5632873A (en) * 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
US5690795A (en) * 1995-06-05 1997-11-25 Applied Materials, Inc. Screwless shield assembly for vacuum processing chambers
US5697427A (en) * 1995-12-22 1997-12-16 Applied Materials, Inc. Apparatus and method for cooling a substrate
US5736021A (en) 1996-07-10 1998-04-07 Applied Materials, Inc. Electrically floating shield in a plasma reactor
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
SG60123A1 (en) * 1996-10-08 1999-02-22 Applied Materials Inc Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition
JP2001509214A (ja) * 1997-01-16 2001-07-10 ボトムフィールド，ロジャー，エル． 蒸気蒸着構成要素及び対応する方法
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
KR20000030996A (ko) 1998-11-02 2000-06-05 윤종용 반도체 건식 식각설비
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
JP2001140054A (ja) 1999-11-15 2001-05-22 Nec Kagoshima Ltd 真空成膜装置のクリーニング方法及び真空成膜装置
US6589352B1 (en) * 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6394023B1 (en) * 2000-03-27 2002-05-28 Applied Materials, Inc. Process kit parts and method for using same
US6296747B1 (en) * 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
US6699375B1 (en) * 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US20020090464A1 (en) * 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US7041201B2 (en) * 2001-11-14 2006-05-09 Applied Materials, Inc. Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
US6899798B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Reusable ceramic-comprising component which includes a scrificial surface layer
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6730174B2 (en) * 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US6797131B2 (en) * 2002-11-12 2004-09-28 Applied Materials, Inc. Design of hardware features to facilitate arc-spray coating applications and functions
US20050016684A1 (en) * 2003-07-25 2005-01-27 Applied Materials, Inc. Process kit for erosion resistance enhancement
JP2005264177A (ja) 2004-03-16 2005-09-29 Renesas Technology Corp スパッタリング装置およびスパッタリング装置のアッパシールド位置調整方法
US7579067B2 (en) 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8062487B2 (en) * 2007-06-25 2011-11-22 United Microelectronics Corp. Wafer supporting device of a sputtering apparatus
KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
KR20120089647A (ko) * 2009-08-11 2012-08-13 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 물리적 기상 증착을 위한 프로세스 키트
US8580092B2 (en) * 2010-01-29 2013-11-12 Applied Materials, Inc. Adjustable process spacing, centering, and improved gas conductance
CN108359957A (zh) * 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW512180B (en) * 2000-09-21 2002-12-01 Promos Technologies Inc Method for maintaining the cleanness of a vacuum chamber of physical vapor deposition system

Also Published As

Publication number Publication date
US20120205241A1 (en) 2012-08-16
TWI494454B (zh) 2015-08-01
WO2009135050A3 (en) 2010-02-18
TW201000664A (en) 2010-01-01
WO2009135050A2 (en) 2009-11-05
CN102017077A (zh) 2011-04-13
US9123511B2 (en) 2015-09-01
KR20110021840A (ko) 2011-03-04
JP2011520034A (ja) 2011-07-14
KR101511027B1 (ko) 2015-04-10
US20090272647A1 (en) 2009-11-05
US8668815B2 (en) 2014-03-11
JP5762281B2 (ja) 2015-08-12

Similar Documents

Publication Publication Date Title
CN102017077B (zh) 用于射频物理气相沉积的处理套组
JP5916384B2 (ja) ウェハ処理堆積物遮蔽構成材
JP5611350B2 (ja) Ｒｆ物理気相堆積用のプロセスキット
US9978569B2 (en) Adjustable process spacing, centering, and improved gas conductance
US9689070B2 (en) Deposition ring and electrostatic chuck for physical vapor deposition chamber
US9062379B2 (en) Wafer processing deposition shielding components

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant