JP2010527152A5 - - Google Patents
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- Publication number
- JP2010527152A5 JP2010527152A5 JP2010507574A JP2010507574A JP2010527152A5 JP 2010527152 A5 JP2010527152 A5 JP 2010527152A5 JP 2010507574 A JP2010507574 A JP 2010507574A JP 2010507574 A JP2010507574 A JP 2010507574A JP 2010527152 A5 JP2010527152 A5 JP 2010527152A5
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- substrate
- substrate support
- arcuate surface
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 28
- 230000002093 peripheral effect Effects 0.000 claims 10
- 238000004140 cleaning Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/745,451 | 2007-05-08 | ||
| US11/745,451 US8435379B2 (en) | 2007-05-08 | 2007-05-08 | Substrate cleaning chamber and cleaning and conditioning methods |
| PCT/US2008/062541 WO2008140982A1 (en) | 2007-05-08 | 2008-05-02 | Substrate cleaning chamber and cleaning and conditioning methods |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012134438A Division JP5437445B2 (ja) | 2007-05-08 | 2012-06-14 | 基板洗浄チャンバ、洗浄及びコンディショニング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010527152A JP2010527152A (ja) | 2010-08-05 |
| JP2010527152A5 true JP2010527152A5 (enExample) | 2011-06-23 |
| JP5427171B2 JP5427171B2 (ja) | 2014-02-26 |
Family
ID=39968423
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010507574A Active JP5427171B2 (ja) | 2007-05-08 | 2008-05-02 | 洗浄チャンバ及び前記洗浄チャンバのための天井電極 |
| JP2012134438A Active JP5437445B2 (ja) | 2007-05-08 | 2012-06-14 | 基板洗浄チャンバ、洗浄及びコンディショニング方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012134438A Active JP5437445B2 (ja) | 2007-05-08 | 2012-06-14 | 基板洗浄チャンバ、洗浄及びコンディショニング方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8435379B2 (enExample) |
| JP (2) | JP5427171B2 (enExample) |
| KR (2) | KR101490117B1 (enExample) |
| CN (2) | CN101680105B (enExample) |
| TW (2) | TWI433215B (enExample) |
| WO (1) | WO2008140982A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8226769B2 (en) | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| JP4193883B2 (ja) * | 2006-07-05 | 2008-12-10 | 住友電気工業株式会社 | 有機金属気相成長装置 |
| US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| JP4903099B2 (ja) * | 2007-08-09 | 2012-03-21 | 東京エレクトロン株式会社 | 銅の再付着防止方法、半導体装置の製造方法、基板処理装置及び記憶媒体 |
| US20100159122A1 (en) * | 2008-12-19 | 2010-06-24 | Canon Kabushiki Kaisha | Deposition film forming apparatus, deposition film forming method and electrophotographic photosensitive member manufacturing method |
| JP2013509700A (ja) * | 2009-10-30 | 2013-03-14 | ソルヴェイ(ソシエテ アノニム) | F2およびcof2を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法 |
| US20120102778A1 (en) * | 2010-04-22 | 2012-05-03 | Ismail Kashkoush | Method of priming and drying substrates |
| JP5743266B2 (ja) * | 2010-08-06 | 2015-07-01 | キヤノンアネルバ株式会社 | 成膜装置及びキャリブレーション方法 |
| CN102543810A (zh) * | 2010-12-27 | 2012-07-04 | 无锡华润上华科技有限公司 | 晶圆片承载座 |
| JP5965680B2 (ja) * | 2012-03-08 | 2016-08-10 | 東京エレクトロン株式会社 | 処理室内部品の冷却方法、処理室内部品冷却プログラム、及び記憶媒体 |
| CN102814305B (zh) * | 2012-08-03 | 2015-04-08 | 京东方科技集团股份有限公司 | 用于刻蚀工艺前清洁腔室的装置及方法 |
| US10099245B2 (en) * | 2013-03-14 | 2018-10-16 | Applied Materials, Inc. | Process kit for deposition and etching |
| US9524889B2 (en) * | 2013-03-15 | 2016-12-20 | Applied Materials, Inc. | Processing systems and apparatus adapted to process substrates in electronic device manufacturing |
| JP5941491B2 (ja) * | 2014-03-26 | 2016-06-29 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びにプログラム |
| US10115573B2 (en) | 2014-10-14 | 2018-10-30 | Applied Materials, Inc. | Apparatus for high compressive stress film deposition to improve kit life |
| US9865437B2 (en) * | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
| CN107154332B (zh) * | 2016-03-03 | 2019-07-19 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及方法 |
| EP3465727B1 (en) * | 2016-06-03 | 2021-10-06 | Evatec AG | Plasma etch chamber and method of plasma etching |
| CN107731650B (zh) * | 2016-08-10 | 2019-11-29 | 北京北方华创微电子装备有限公司 | 反应腔室以及半导体加工设备 |
| DE102017100725A1 (de) * | 2016-09-09 | 2018-03-15 | Aixtron Se | CVD-Reaktor und Verfahren zum Reinigen eines CVD-Reaktors |
| JP7072439B2 (ja) * | 2017-05-12 | 2022-05-20 | 東京エレクトロン株式会社 | プラズマ処理装置の洗浄方法 |
| US10468221B2 (en) * | 2017-09-27 | 2019-11-05 | Applied Materials, Inc. | Shadow frame with sides having a varied profile for improved deposition uniformity |
| CN111602235B (zh) | 2018-01-29 | 2025-03-14 | 应用材料公司 | 用于在pvd处理中减少颗粒的处理配件几何形状 |
| US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
| CN110484895B (zh) * | 2018-05-14 | 2021-01-08 | 北京北方华创微电子装备有限公司 | 腔室组件及反应腔室 |
| JP7105666B2 (ja) | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7201398B2 (ja) * | 2018-11-08 | 2023-01-10 | 株式会社日立ハイテク | プラズマ処理装置 |
| US11282729B2 (en) * | 2018-12-27 | 2022-03-22 | Areesys Technologies, Inc. | Method and apparatus for poling polymer thin films |
| KR102758748B1 (ko) | 2019-05-14 | 2025-01-22 | 삼성전자주식회사 | 샤워 헤드 어셈블리 및 이를 갖는 플라즈마 처리 장치 |
| CN111074236A (zh) * | 2019-12-27 | 2020-04-28 | 重庆康佳光电技术研究院有限公司 | 一种化学气相沉积装置 |
| US12100576B2 (en) | 2020-04-30 | 2024-09-24 | Applied Materials, Inc. | Metal oxide preclean chamber with improved selectivity and flow conductance |
| KR102861407B1 (ko) * | 2020-06-19 | 2025-09-18 | 에이에스엠 아이피 홀딩 비.브이. | 다중 스테이지 기판 처리 시스템 |
| JP7519822B2 (ja) * | 2020-06-19 | 2024-07-22 | 東京エレクトロン株式会社 | 収納モジュール、基板処理システムおよび消耗部材の搬送方法 |
| JP7264976B2 (ja) * | 2020-12-08 | 2023-04-25 | セメス カンパニー,リミテッド | 基板処理装置及び基板支持ユニット |
| US20220189749A1 (en) * | 2020-12-14 | 2022-06-16 | Applied Materials, Inc. | Process Kit Conditioning Chamber |
| CN114959644A (zh) * | 2021-02-26 | 2022-08-30 | 鑫天虹(厦门)科技有限公司 | 原子层沉积装置 |
| FI130021B (en) * | 2021-05-10 | 2022-12-30 | Picosun Oy | Substrate processing apparatus and method |
| CN114914147B (zh) * | 2022-05-07 | 2025-09-16 | 北京北方华创微电子装备有限公司 | 一种工艺腔室及平行度的检测方法 |
| JP7460858B1 (ja) * | 2023-04-26 | 2024-04-02 | エスケー エンパルス カンパニー リミテッド | 上部電極、これを含む半導体素子の製造装置および半導体素子の製造方法 |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4297162A (en) * | 1979-10-17 | 1981-10-27 | Texas Instruments Incorporated | Plasma etching using improved electrode |
| JPS5871626A (ja) | 1981-10-23 | 1983-04-28 | Nec Kyushu Ltd | プラズマエツチング装置 |
| US6077384A (en) | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| JPH0613344A (ja) * | 1992-06-26 | 1994-01-21 | Tokyo Electron Ltd | プラズマ処理装置 |
| KR100276093B1 (ko) * | 1992-10-19 | 2000-12-15 | 히가시 데쓰로 | 플라스마 에칭방법 |
| US5865896A (en) | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
| KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
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| JP4602545B2 (ja) * | 1997-09-16 | 2010-12-22 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピース用シュラウド |
| US20020011215A1 (en) * | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
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| US7418921B2 (en) * | 2005-08-12 | 2008-09-02 | Asm Japan K.K. | Plasma CVD apparatus for forming uniform film |
-
2007
- 2007-05-08 US US11/745,451 patent/US8435379B2/en active Active
-
2008
- 2008-05-02 WO PCT/US2008/062541 patent/WO2008140982A1/en not_active Ceased
- 2008-05-02 CN CN200880017116.9A patent/CN101680105B/zh active Active
- 2008-05-02 CN CN201210229794.XA patent/CN102755976B/zh active Active
- 2008-05-02 JP JP2010507574A patent/JP5427171B2/ja active Active
- 2008-05-02 KR KR1020097025556A patent/KR101490117B1/ko active Active
- 2008-05-02 KR KR1020127016110A patent/KR101466584B1/ko active Active
- 2008-05-07 TW TW097116866A patent/TWI433215B/zh active
- 2008-05-07 TW TW101121147A patent/TWI544530B/zh active
-
2012
- 2012-06-14 JP JP2012134438A patent/JP5437445B2/ja active Active
-
2013
- 2013-01-11 US US13/740,083 patent/US20130192629A1/en not_active Abandoned
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