JP2010527152A5 - - Google Patents

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Publication number
JP2010527152A5
JP2010527152A5 JP2010507574A JP2010507574A JP2010527152A5 JP 2010527152 A5 JP2010527152 A5 JP 2010527152A5 JP 2010507574 A JP2010507574 A JP 2010507574A JP 2010507574 A JP2010507574 A JP 2010507574A JP 2010527152 A5 JP2010527152 A5 JP 2010527152A5
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JP
Japan
Prior art keywords
chamber
substrate
substrate support
arcuate surface
support
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JP2010507574A
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English (en)
Japanese (ja)
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JP5427171B2 (ja
JP2010527152A (ja
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Priority claimed from US11/745,451 external-priority patent/US8435379B2/en
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Publication of JP2010527152A5 publication Critical patent/JP2010527152A5/ja
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Publication of JP5427171B2 publication Critical patent/JP5427171B2/ja
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JP2010507574A 2007-05-08 2008-05-02 洗浄チャンバ及び前記洗浄チャンバのための天井電極 Active JP5427171B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/745,451 2007-05-08
US11/745,451 US8435379B2 (en) 2007-05-08 2007-05-08 Substrate cleaning chamber and cleaning and conditioning methods
PCT/US2008/062541 WO2008140982A1 (en) 2007-05-08 2008-05-02 Substrate cleaning chamber and cleaning and conditioning methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012134438A Division JP5437445B2 (ja) 2007-05-08 2012-06-14 基板洗浄チャンバ、洗浄及びコンディショニング方法

Publications (3)

Publication Number Publication Date
JP2010527152A JP2010527152A (ja) 2010-08-05
JP2010527152A5 true JP2010527152A5 (enExample) 2011-06-23
JP5427171B2 JP5427171B2 (ja) 2014-02-26

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ID=39968423

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010507574A Active JP5427171B2 (ja) 2007-05-08 2008-05-02 洗浄チャンバ及び前記洗浄チャンバのための天井電極
JP2012134438A Active JP5437445B2 (ja) 2007-05-08 2012-06-14 基板洗浄チャンバ、洗浄及びコンディショニング方法

Family Applications After (1)

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JP2012134438A Active JP5437445B2 (ja) 2007-05-08 2012-06-14 基板洗浄チャンバ、洗浄及びコンディショニング方法

Country Status (6)

Country Link
US (2) US8435379B2 (enExample)
JP (2) JP5427171B2 (enExample)
KR (2) KR101490117B1 (enExample)
CN (2) CN101680105B (enExample)
TW (2) TWI433215B (enExample)
WO (1) WO2008140982A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
JP4193883B2 (ja) * 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
JP4903099B2 (ja) * 2007-08-09 2012-03-21 東京エレクトロン株式会社 銅の再付着防止方法、半導体装置の製造方法、基板処理装置及び記憶媒体
US20100159122A1 (en) * 2008-12-19 2010-06-24 Canon Kabushiki Kaisha Deposition film forming apparatus, deposition film forming method and electrophotographic photosensitive member manufacturing method
JP2013509700A (ja) * 2009-10-30 2013-03-14 ソルヴェイ(ソシエテ アノニム) F2およびcof2を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法
US20120102778A1 (en) * 2010-04-22 2012-05-03 Ismail Kashkoush Method of priming and drying substrates
JP5743266B2 (ja) * 2010-08-06 2015-07-01 キヤノンアネルバ株式会社 成膜装置及びキャリブレーション方法
CN102543810A (zh) * 2010-12-27 2012-07-04 无锡华润上华科技有限公司 晶圆片承载座
JP5965680B2 (ja) * 2012-03-08 2016-08-10 東京エレクトロン株式会社 処理室内部品の冷却方法、処理室内部品冷却プログラム、及び記憶媒体
CN102814305B (zh) * 2012-08-03 2015-04-08 京东方科技集团股份有限公司 用于刻蚀工艺前清洁腔室的装置及方法
US10099245B2 (en) * 2013-03-14 2018-10-16 Applied Materials, Inc. Process kit for deposition and etching
US9524889B2 (en) * 2013-03-15 2016-12-20 Applied Materials, Inc. Processing systems and apparatus adapted to process substrates in electronic device manufacturing
JP5941491B2 (ja) * 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
US10115573B2 (en) 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
US9865437B2 (en) * 2014-12-30 2018-01-09 Applied Materials, Inc. High conductance process kit
CN107154332B (zh) * 2016-03-03 2019-07-19 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及方法
EP3465727B1 (en) * 2016-06-03 2021-10-06 Evatec AG Plasma etch chamber and method of plasma etching
CN107731650B (zh) * 2016-08-10 2019-11-29 北京北方华创微电子装备有限公司 反应腔室以及半导体加工设备
DE102017100725A1 (de) * 2016-09-09 2018-03-15 Aixtron Se CVD-Reaktor und Verfahren zum Reinigen eines CVD-Reaktors
JP7072439B2 (ja) * 2017-05-12 2022-05-20 東京エレクトロン株式会社 プラズマ処理装置の洗浄方法
US10468221B2 (en) * 2017-09-27 2019-11-05 Applied Materials, Inc. Shadow frame with sides having a varied profile for improved deposition uniformity
CN111602235B (zh) 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
US20190244793A1 (en) * 2018-02-05 2019-08-08 Lam Research Corporation Tapered upper electrode for uniformity control in plasma processing
CN110484895B (zh) * 2018-05-14 2021-01-08 北京北方华创微电子装备有限公司 腔室组件及反应腔室
JP7105666B2 (ja) 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
JP7201398B2 (ja) * 2018-11-08 2023-01-10 株式会社日立ハイテク プラズマ処理装置
US11282729B2 (en) * 2018-12-27 2022-03-22 Areesys Technologies, Inc. Method and apparatus for poling polymer thin films
KR102758748B1 (ko) 2019-05-14 2025-01-22 삼성전자주식회사 샤워 헤드 어셈블리 및 이를 갖는 플라즈마 처리 장치
CN111074236A (zh) * 2019-12-27 2020-04-28 重庆康佳光电技术研究院有限公司 一种化学气相沉积装置
US12100576B2 (en) 2020-04-30 2024-09-24 Applied Materials, Inc. Metal oxide preclean chamber with improved selectivity and flow conductance
KR102861407B1 (ko) * 2020-06-19 2025-09-18 에이에스엠 아이피 홀딩 비.브이. 다중 스테이지 기판 처리 시스템
JP7519822B2 (ja) * 2020-06-19 2024-07-22 東京エレクトロン株式会社 収納モジュール、基板処理システムおよび消耗部材の搬送方法
JP7264976B2 (ja) * 2020-12-08 2023-04-25 セメス カンパニー,リミテッド 基板処理装置及び基板支持ユニット
US20220189749A1 (en) * 2020-12-14 2022-06-16 Applied Materials, Inc. Process Kit Conditioning Chamber
CN114959644A (zh) * 2021-02-26 2022-08-30 鑫天虹(厦门)科技有限公司 原子层沉积装置
FI130021B (en) * 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
CN114914147B (zh) * 2022-05-07 2025-09-16 北京北方华创微电子装备有限公司 一种工艺腔室及平行度的检测方法
JP7460858B1 (ja) * 2023-04-26 2024-04-02 エスケー エンパルス カンパニー リミテッド 上部電極、これを含む半導体素子の製造装置および半導体素子の製造方法

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
JPS5871626A (ja) 1981-10-23 1983-04-28 Nec Kyushu Ltd プラズマエツチング装置
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
JPH0613344A (ja) * 1992-06-26 1994-01-21 Tokyo Electron Ltd プラズマ処理装置
KR100276093B1 (ko) * 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
TW299559B (enExample) * 1994-04-20 1997-03-01 Tokyo Electron Co Ltd
EP0680072B1 (en) 1994-04-28 2003-10-08 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5561348A (en) 1995-04-10 1996-10-01 Old Dominion University Field controlled plasma discharge device
US5711849A (en) * 1995-05-03 1998-01-27 Daniel L. Flamm Process optimization in gas phase dry etching
US5710486A (en) 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
JPH09139349A (ja) * 1995-06-07 1997-05-27 Varian Assoc Inc スパッタクリーニングチャンバーから堆積物をクリーニングする方法
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5952060A (en) 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
KR100252210B1 (ko) * 1996-12-24 2000-04-15 윤종용 반도체장치 제조용 건식식각장치
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
JP3536585B2 (ja) * 1997-04-25 2004-06-14 松下電器産業株式会社 ワークのプラズマ処理装置およびプラズマ処理方法
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
US6107192A (en) 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6273958B2 (en) * 1999-06-09 2001-08-14 Applied Materials, Inc. Substrate support for plasma processing
US6827870B1 (en) * 1999-10-12 2004-12-07 Wisconsin Alumni Research Foundation Method and apparatus for etching and deposition using micro-plasmas
JP4286404B2 (ja) * 1999-10-15 2009-07-01 東京エレクトロン株式会社 整合器およびプラズマ処理装置
WO2001052302A1 (en) 2000-01-10 2001-07-19 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US6942817B2 (en) * 2000-03-24 2005-09-13 Dainippon Printing Co., Ltd. Method of manufacturing wireless suspension blank
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US6436267B1 (en) 2000-08-29 2002-08-20 Applied Materials, Inc. Method for achieving copper fill of high aspect ratio interconnect features
US6579730B2 (en) 2001-07-18 2003-06-17 Applied Materials, Inc. Monitoring process for oxide removal
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US6586886B1 (en) 2001-12-19 2003-07-01 Applied Materials, Inc. Gas distribution plate electrode for a plasma reactor
JP3963431B2 (ja) * 2002-03-04 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
KR100460143B1 (ko) * 2002-08-02 2004-12-03 삼성전자주식회사 반도체 제조설비용 프로세스 챔버
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7842169B2 (en) * 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
US7625460B2 (en) * 2003-08-01 2009-12-01 Micron Technology, Inc. Multifrequency plasma reactor
US7170142B2 (en) 2003-10-03 2007-01-30 Applied Materials, Inc. Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith
US7176140B1 (en) * 2004-07-09 2007-02-13 Novellus Systems, Inc. Adhesion promotion for etch by-products
US7418921B2 (en) * 2005-08-12 2008-09-02 Asm Japan K.K. Plasma CVD apparatus for forming uniform film

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