TWI433215B - 基材清洗室及清潔與調節之方法 - Google Patents
基材清洗室及清潔與調節之方法 Download PDFInfo
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- TWI433215B TWI433215B TW097116866A TW97116866A TWI433215B TW I433215 B TWI433215 B TW I433215B TW 097116866 A TW097116866 A TW 097116866A TW 97116866 A TW97116866 A TW 97116866A TW I433215 B TWI433215 B TW I433215B
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- 239000000758 substrate Substances 0.000 title claims description 227
- 238000004140 cleaning Methods 0.000 title claims description 99
- 238000000034 method Methods 0.000 title description 44
- 230000003750 conditioning effect Effects 0.000 title description 21
- 239000000463 material Substances 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 58
- 238000012545 processing Methods 0.000 description 41
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
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- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
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- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/745,451 US8435379B2 (en) | 2007-05-08 | 2007-05-08 | Substrate cleaning chamber and cleaning and conditioning methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200903600A TW200903600A (en) | 2009-01-16 |
| TWI433215B true TWI433215B (zh) | 2014-04-01 |
Family
ID=39968423
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097116866A TWI433215B (zh) | 2007-05-08 | 2008-05-07 | 基材清洗室及清潔與調節之方法 |
| TW101121147A TWI544530B (zh) | 2007-05-08 | 2008-05-07 | 基材清洗室及清潔與調節之方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101121147A TWI544530B (zh) | 2007-05-08 | 2008-05-07 | 基材清洗室及清潔與調節之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8435379B2 (enExample) |
| JP (2) | JP5427171B2 (enExample) |
| KR (2) | KR101490117B1 (enExample) |
| CN (2) | CN101680105B (enExample) |
| TW (2) | TWI433215B (enExample) |
| WO (1) | WO2008140982A1 (enExample) |
Families Citing this family (40)
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|---|---|---|---|---|
| US8226769B2 (en) | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| JP4193883B2 (ja) * | 2006-07-05 | 2008-12-10 | 住友電気工業株式会社 | 有機金属気相成長装置 |
| US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| JP4903099B2 (ja) * | 2007-08-09 | 2012-03-21 | 東京エレクトロン株式会社 | 銅の再付着防止方法、半導体装置の製造方法、基板処理装置及び記憶媒体 |
| US20100159122A1 (en) * | 2008-12-19 | 2010-06-24 | Canon Kabushiki Kaisha | Deposition film forming apparatus, deposition film forming method and electrophotographic photosensitive member manufacturing method |
| JP2013509700A (ja) * | 2009-10-30 | 2013-03-14 | ソルヴェイ（ソシエテ アノニム） | Ｆ２およびｃｏｆ２を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法 |
| US20120102778A1 (en) * | 2010-04-22 | 2012-05-03 | Ismail Kashkoush | Method of priming and drying substrates |
| JP5743266B2 (ja) * | 2010-08-06 | 2015-07-01 | キヤノンアネルバ株式会社 | 成膜装置及びキャリブレーション方法 |
| CN102543810A (zh) * | 2010-12-27 | 2012-07-04 | 无锡华润上华科技有限公司 | 晶圆片承载座 |
| JP5965680B2 (ja) * | 2012-03-08 | 2016-08-10 | 東京エレクトロン株式会社 | 処理室内部品の冷却方法、処理室内部品冷却プログラム、及び記憶媒体 |
| CN102814305B (zh) * | 2012-08-03 | 2015-04-08 | 京东方科技集团股份有限公司 | 用于刻蚀工艺前清洁腔室的装置及方法 |
| US10099245B2 (en) * | 2013-03-14 | 2018-10-16 | Applied Materials, Inc. | Process kit for deposition and etching |
| US9524889B2 (en) * | 2013-03-15 | 2016-12-20 | Applied Materials, Inc. | Processing systems and apparatus adapted to process substrates in electronic device manufacturing |
| JP5941491B2 (ja) * | 2014-03-26 | 2016-06-29 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びにプログラム |
| US10115573B2 (en) | 2014-10-14 | 2018-10-30 | Applied Materials, Inc. | Apparatus for high compressive stress film deposition to improve kit life |
| US9865437B2 (en) * | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
| CN107154332B (zh) * | 2016-03-03 | 2019-07-19 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及方法 |
| EP3465727B1 (en) * | 2016-06-03 | 2021-10-06 | Evatec AG | Plasma etch chamber and method of plasma etching |
| CN107731650B (zh) * | 2016-08-10 | 2019-11-29 | 北京北方华创微电子装备有限公司 | 反应腔室以及半导体加工设备 |
| DE102017100725A1 (de) * | 2016-09-09 | 2018-03-15 | Aixtron Se | CVD-Reaktor und Verfahren zum Reinigen eines CVD-Reaktors |
| JP7072439B2 (ja) * | 2017-05-12 | 2022-05-20 | 東京エレクトロン株式会社 | プラズマ処理装置の洗浄方法 |
| US10468221B2 (en) * | 2017-09-27 | 2019-11-05 | Applied Materials, Inc. | Shadow frame with sides having a varied profile for improved deposition uniformity |
| CN111602235B (zh) | 2018-01-29 | 2025-03-14 | 应用材料公司 | 用于在pvd处理中减少颗粒的处理配件几何形状 |
| US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
| CN110484895B (zh) * | 2018-05-14 | 2021-01-08 | 北京北方华创微电子装备有限公司 | 腔室组件及反应腔室 |
| JP7105666B2 (ja) | 2018-09-26 | 2022-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7201398B2 (ja) * | 2018-11-08 | 2023-01-10 | 株式会社日立ハイテク | プラズマ処理装置 |
| US11282729B2 (en) * | 2018-12-27 | 2022-03-22 | Areesys Technologies, Inc. | Method and apparatus for poling polymer thin films |
| KR102758748B1 (ko) | 2019-05-14 | 2025-01-22 | 삼성전자주식회사 | 샤워 헤드 어셈블리 및 이를 갖는 플라즈마 처리 장치 |
| CN111074236A (zh) * | 2019-12-27 | 2020-04-28 | 重庆康佳光电技术研究院有限公司 | 一种化学气相沉积装置 |
| US12100576B2 (en) | 2020-04-30 | 2024-09-24 | Applied Materials, Inc. | Metal oxide preclean chamber with improved selectivity and flow conductance |
| KR102861407B1 (ko) * | 2020-06-19 | 2025-09-18 | 에이에스엠 아이피 홀딩 비.브이. | 다중 스테이지 기판 처리 시스템 |
| JP7519822B2 (ja) * | 2020-06-19 | 2024-07-22 | 東京エレクトロン株式会社 | 収納モジュール、基板処理システムおよび消耗部材の搬送方法 |
| JP7264976B2 (ja) * | 2020-12-08 | 2023-04-25 | セメス カンパニー，リミテッド | 基板処理装置及び基板支持ユニット |
| US20220189749A1 (en) * | 2020-12-14 | 2022-06-16 | Applied Materials, Inc. | Process Kit Conditioning Chamber |
| CN114959644A (zh) * | 2021-02-26 | 2022-08-30 | 鑫天虹(厦门)科技有限公司 | 原子层沉积装置 |
| FI130021B (en) * | 2021-05-10 | 2022-12-30 | Picosun Oy | Substrate processing apparatus and method |
| CN114914147B (zh) * | 2022-05-07 | 2025-09-16 | 北京北方华创微电子装备有限公司 | 一种工艺腔室及平行度的检测方法 |
| JP7460858B1 (ja) * | 2023-04-26 | 2024-04-02 | エスケー エンパルス カンパニー リミテッド | 上部電極、これを含む半導体素子の製造装置および半導体素子の製造方法 |
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2007
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-
2008
- 2008-05-02 WO PCT/US2008/062541 patent/WO2008140982A1/en not_active Ceased
- 2008-05-02 CN CN200880017116.9A patent/CN101680105B/zh active Active
- 2008-05-02 CN CN201210229794.XA patent/CN102755976B/zh active Active
- 2008-05-02 JP JP2010507574A patent/JP5427171B2/ja active Active
- 2008-05-02 KR KR1020097025556A patent/KR101490117B1/ko active Active
- 2008-05-02 KR KR1020127016110A patent/KR101466584B1/ko active Active
- 2008-05-07 TW TW097116866A patent/TWI433215B/zh active
- 2008-05-07 TW TW101121147A patent/TWI544530B/zh active
-
2012
- 2012-06-14 JP JP2012134438A patent/JP5437445B2/ja active Active
-
2013
- 2013-01-11 US US13/740,083 patent/US20130192629A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TWI544530B (zh) | 2016-08-01 |
| CN102755976B (zh) | 2016-05-18 |
| JP5437445B2 (ja) | 2014-03-12 |
| KR20120090098A (ko) | 2012-08-16 |
| CN101680105B (zh) | 2016-02-24 |
| KR101466584B1 (ko) | 2014-12-01 |
| US8435379B2 (en) | 2013-05-07 |
| CN101680105A (zh) | 2010-03-24 |
| CN102755976A (zh) | 2012-10-31 |
| KR20100017700A (ko) | 2010-02-16 |
| US20130192629A1 (en) | 2013-08-01 |
| KR101490117B1 (ko) | 2015-02-05 |
| JP2012182496A (ja) | 2012-09-20 |
| TW200903600A (en) | 2009-01-16 |
| WO2008140982A1 (en) | 2008-11-20 |
| JP5427171B2 (ja) | 2014-02-26 |
| JP2010527152A (ja) | 2010-08-05 |
| TW201243924A (en) | 2012-11-01 |
| US20080276958A1 (en) | 2008-11-13 |
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