TWI544530B - 基材清洗室及清潔與調節之方法 - Google Patents

基材清洗室及清潔與調節之方法 Download PDF

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Publication number
TWI544530B
TWI544530B TW101121147A TW101121147A TWI544530B TW I544530 B TWI544530 B TW I544530B TW 101121147 A TW101121147 A TW 101121147A TW 101121147 A TW101121147 A TW 101121147A TW I544530 B TWI544530 B TW I544530B
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TW
Taiwan
Prior art keywords
substrate
sputtering
frequency
batch
substrates
Prior art date
Application number
TW101121147A
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English (en)
Chinese (zh)
Other versions
TW201243924A (en
Inventor
曼塔溫納
布朗卡爾
皮皮頓約翰Ａ
霍夫曼丹尼爾Ｊ
薛儂史蒂芬Ｃ
米勒凱斯
帕克維傑Ｄ
Original Assignee
應用材料股份有限公司
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Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201243924A publication Critical patent/TW201243924A/zh
Application granted granted Critical
Publication of TWI544530B publication Critical patent/TWI544530B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
TW101121147A 2007-05-08 2008-05-07 基材清洗室及清潔與調節之方法 TWI544530B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/745,451 US8435379B2 (en) 2007-05-08 2007-05-08 Substrate cleaning chamber and cleaning and conditioning methods

Publications (2)

Publication Number Publication Date
TW201243924A TW201243924A (en) 2012-11-01
TWI544530B true TWI544530B (zh) 2016-08-01

Family

ID=39968423

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101121147A TWI544530B (zh) 2007-05-08 2008-05-07 基材清洗室及清潔與調節之方法
TW097116866A TWI433215B (zh) 2007-05-08 2008-05-07 基材清洗室及清潔與調節之方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW097116866A TWI433215B (zh) 2007-05-08 2008-05-07 基材清洗室及清潔與調節之方法

Country Status (6)

Country Link
US (2) US8435379B2 (enExample)
JP (2) JP5427171B2 (enExample)
KR (2) KR101466584B1 (enExample)
CN (2) CN101680105B (enExample)
TW (2) TWI544530B (enExample)
WO (1) WO2008140982A1 (enExample)

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Also Published As

Publication number Publication date
CN102755976B (zh) 2016-05-18
JP5437445B2 (ja) 2014-03-12
JP2012182496A (ja) 2012-09-20
TWI433215B (zh) 2014-04-01
JP2010527152A (ja) 2010-08-05
TW200903600A (en) 2009-01-16
WO2008140982A1 (en) 2008-11-20
US8435379B2 (en) 2013-05-07
CN102755976A (zh) 2012-10-31
KR101466584B1 (ko) 2014-12-01
US20130192629A1 (en) 2013-08-01
JP5427171B2 (ja) 2014-02-26
CN101680105A (zh) 2010-03-24
TW201243924A (en) 2012-11-01
KR101490117B1 (ko) 2015-02-05
KR20120090098A (ko) 2012-08-16
US20080276958A1 (en) 2008-11-13
KR20100017700A (ko) 2010-02-16
CN101680105B (zh) 2016-02-24

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