CN101680105B - 基板清洁腔室以及清洁与调节方法 - Google Patents

基板清洁腔室以及清洁与调节方法 Download PDF

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Publication number
CN101680105B
CN101680105B CN200880017116.9A CN200880017116A CN101680105B CN 101680105 B CN101680105 B CN 101680105B CN 200880017116 A CN200880017116 A CN 200880017116A CN 101680105 B CN101680105 B CN 101680105B
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China
Prior art keywords
substrate
support
electrode
substrate support
cleaning
Prior art date
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Active
Application number
CN200880017116.9A
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English (en)
Chinese (zh)
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CN101680105A (zh
Inventor
维内特·H·梅塔
卡尔·M·布朗
约翰·A·帕皮通
丹尼尔·J·霍夫曼
史蒂文·C·香农
基思·A·米勒
维杰·D·帕克
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN201210229794.XA priority Critical patent/CN102755976B/zh
Publication of CN101680105A publication Critical patent/CN101680105A/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
CN200880017116.9A 2007-05-08 2008-05-02 基板清洁腔室以及清洁与调节方法 Active CN101680105B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210229794.XA CN102755976B (zh) 2007-05-08 2008-05-02 基板清洁腔室以及清洁与调节方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/745,451 2007-05-08
US11/745,451 US8435379B2 (en) 2007-05-08 2007-05-08 Substrate cleaning chamber and cleaning and conditioning methods
PCT/US2008/062541 WO2008140982A1 (en) 2007-05-08 2008-05-02 Substrate cleaning chamber and cleaning and conditioning methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210229794.XA Division CN102755976B (zh) 2007-05-08 2008-05-02 基板清洁腔室以及清洁与调节方法

Publications (2)

Publication Number Publication Date
CN101680105A CN101680105A (zh) 2010-03-24
CN101680105B true CN101680105B (zh) 2016-02-24

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CN201210229794.XA Active CN102755976B (zh) 2007-05-08 2008-05-02 基板清洁腔室以及清洁与调节方法

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Country Status (6)

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US (2) US8435379B2 (enExample)
JP (2) JP5427171B2 (enExample)
KR (2) KR101490117B1 (enExample)
CN (2) CN101680105B (enExample)
TW (2) TWI433215B (enExample)
WO (1) WO2008140982A1 (enExample)

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Also Published As

Publication number Publication date
TWI544530B (zh) 2016-08-01
CN102755976B (zh) 2016-05-18
JP5437445B2 (ja) 2014-03-12
KR20120090098A (ko) 2012-08-16
KR101466584B1 (ko) 2014-12-01
US8435379B2 (en) 2013-05-07
CN101680105A (zh) 2010-03-24
CN102755976A (zh) 2012-10-31
KR20100017700A (ko) 2010-02-16
US20130192629A1 (en) 2013-08-01
KR101490117B1 (ko) 2015-02-05
JP2012182496A (ja) 2012-09-20
TW200903600A (en) 2009-01-16
WO2008140982A1 (en) 2008-11-20
JP5427171B2 (ja) 2014-02-26
JP2010527152A (ja) 2010-08-05
TW201243924A (en) 2012-11-01
TWI433215B (zh) 2014-04-01
US20080276958A1 (en) 2008-11-13

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