JP2011233866A - 有機金属化学気相堆積装置 - Google Patents
有機金属化学気相堆積装置 Download PDFInfo
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- JP2011233866A JP2011233866A JP2011058067A JP2011058067A JP2011233866A JP 2011233866 A JP2011233866 A JP 2011233866A JP 2011058067 A JP2011058067 A JP 2011058067A JP 2011058067 A JP2011058067 A JP 2011058067A JP 2011233866 A JP2011233866 A JP 2011233866A
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- Prior art keywords
- wafer
- chemical vapor
- vapor deposition
- deposition apparatus
- wafer susceptor
- Prior art date
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 34
- 235000012431 wafers Nutrition 0.000 claims abstract description 131
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims description 15
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000000376 reactant Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 23
- 238000000407 epitaxy Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Abstract
【解決手段】当該有機金属化学気相堆積装置は、反応室、回転スタンド、ウエハサセプタ206a、ヒーター、シャワーヘッドを含む。反応室は、開口部を有する。回転スタンドは、反応室に設けられる。ウエハサセプタ206aは、回転スタンドに設けられ、回転スタンドにより連動して回転する。その内、ウエハサセプタ206aは、その一表面に設けられて複数のウエハを積込むことに適用され、前記ウエハに対応する複数の多辺形窪み領域214a,224を含む。ヒーターは、回転スタンド内で、ウエハサセプタ206aの下に設けられる。シャワーヘッドは、ウエハサセプタ206aの表面210に向かって反応気体を放出するように、反応室の開口部を覆う。
【選択図】図4
Description
Claims (10)
- 開口部を有する反応室と、
前記反応室に設けられる回転スタンドと、
前記回転スタンドに設けられ、前記回転スタンドにより連動して回転し、その一表面に設けられて、複数のウエハを積込むことに適用されて、前記ウエハに対応する複数の多辺形窪み領域を含むウエハサセプタと、
前記回転スタンド内で、前記ウエハサセプタの下に設けられるヒーターと、
前記ウエハサセプタの前記表面に向かって反応気体を放出するように、前記反応室の前記開口部を覆うシャワーヘッドと、
を含む有機金属化学気相堆積(MOCVD)装置。 - 前記多辺形窪み領域は、同じ形状を有する請求項1に記載の有機金属化学気相堆積装置。
- 前記多辺形窪み領域は、異なる形状を有する請求項1に記載の有機金属化学気相堆積装置。
- 前記多辺形窪み領域の形状は、積込む前記ウエハの形状と同じである請求項1に記載の有機金属化学気相堆積装置。
- 前記多辺形窪み領域の深さは、積込む前記ウエハの厚みより小さい又は等しい請求項1に記載の有機金属化学気相堆積装置。
- 各前記多辺形窪み領域の少なくとも一辺は、隣接する前記多辺形窪み領域の少なくとも一辺と接合する請求項1に記載の有機金属化学気相堆積装置。
- 前記多辺形窪み領域は、同じサイズを有する請求項1に記載の有機金属化学気相堆積装置。
- 前記多辺形窪み領域は、少なくとも二つの異なるサイズを有する請求項1に記載の有機金属化学気相堆積装置。
- 前記多辺形窪み領域の形状は、三角形、四辺形、五辺形、六辺形又は八辺形である請求項1に記載の有機金属化学気相堆積装置。
- 前記ヒーターは、前記回転スタンドにより連動して回転しない請求項1に記載の有機金属化学気相堆積装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW099113734A TWI398545B (zh) | 2010-04-29 | 2010-04-29 | 有機金屬化學氣相沉積機台 |
TW099113734 | 2010-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011233866A true JP2011233866A (ja) | 2011-11-17 |
Family
ID=44857248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011058067A Pending JP2011233866A (ja) | 2010-04-29 | 2011-03-16 | 有機金属化学気相堆積装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110265723A1 (ja) |
JP (1) | JP2011233866A (ja) |
KR (1) | KR20110120817A (ja) |
TW (1) | TWI398545B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5999807B2 (ja) * | 2012-03-07 | 2016-09-28 | 東洋炭素株式会社 | サセプタ |
CN102766854B (zh) * | 2012-08-16 | 2013-06-05 | 江苏汉莱科技有限公司 | 一种mocvd新系统 |
CN104342751B (zh) * | 2013-08-02 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔和mocvd设备 |
DE102014114947A1 (de) * | 2014-05-16 | 2015-11-19 | Aixtron Se | Vorrichtung zum Abscheiden von Halbleiterschichten sowie einen Suszeptor zur Verwendung in einer derartigen Vorrichtung |
USD793971S1 (en) | 2015-03-27 | 2017-08-08 | Veeco Instruments Inc. | Wafer carrier with a 14-pocket configuration |
USD793972S1 (en) | 2015-03-27 | 2017-08-08 | Veeco Instruments Inc. | Wafer carrier with a 31-pocket configuration |
USD778247S1 (en) | 2015-04-16 | 2017-02-07 | Veeco Instruments Inc. | Wafer carrier with a multi-pocket configuration |
CN110809335A (zh) * | 2019-11-14 | 2020-02-18 | 江苏实为半导体科技有限公司 | 一种具有保护功能的mocvd加热器源 |
CN113201728B (zh) * | 2021-04-28 | 2023-10-31 | 錼创显示科技股份有限公司 | 半导体晶圆承载结构及金属有机化学气相沉积装置 |
USD1026297S1 (en) * | 2022-07-15 | 2024-05-07 | Dandan Tan | Set of lenses |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09298232A (ja) * | 1996-04-30 | 1997-11-18 | Matsushita Electric Ind Co Ltd | 基板保持具、半導体製造装置、結晶成長方法及び半導体製造方法 |
JP2002217121A (ja) * | 2001-01-23 | 2002-08-02 | Fujitsu Ltd | 有機金属気相成長装置及び有機金属気相成長方法 |
JP2003073189A (ja) * | 2001-08-31 | 2003-03-12 | Sumitomo Chem Co Ltd | 半導体製造方法及び装置 |
JP2007320849A (ja) * | 2006-06-01 | 2007-12-13 | Samsung Corning Co Ltd | GaNバルク単結晶の成長方法および成長装置 |
JP2009212531A (ja) * | 2003-07-15 | 2009-09-17 | Bridgelux Inc | 化学気相成長反応装置 |
JP2010040696A (ja) * | 2008-08-04 | 2010-02-18 | Hitachi Cable Ltd | エピタキシャル成長用基板 |
JP2010062383A (ja) * | 2008-09-04 | 2010-03-18 | Sharp Corp | 気相成長装置及び気相成長方法 |
WO2010039352A2 (en) * | 2008-09-30 | 2010-04-08 | Motorola, Inc. | Method and apparatus for optimizing spectrum utilization by a cognitive radio network |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US9487858B2 (en) * | 2008-03-13 | 2016-11-08 | Board Of Trustees Of Michigan State University | Process and apparatus for diamond synthesis |
-
2010
- 2010-04-29 TW TW099113734A patent/TWI398545B/zh not_active IP Right Cessation
-
2011
- 2011-03-16 JP JP2011058067A patent/JP2011233866A/ja active Pending
- 2011-04-07 KR KR1020110032002A patent/KR20110120817A/ko not_active Application Discontinuation
- 2011-04-28 US US13/095,910 patent/US20110265723A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09298232A (ja) * | 1996-04-30 | 1997-11-18 | Matsushita Electric Ind Co Ltd | 基板保持具、半導体製造装置、結晶成長方法及び半導体製造方法 |
JP2002217121A (ja) * | 2001-01-23 | 2002-08-02 | Fujitsu Ltd | 有機金属気相成長装置及び有機金属気相成長方法 |
JP2003073189A (ja) * | 2001-08-31 | 2003-03-12 | Sumitomo Chem Co Ltd | 半導体製造方法及び装置 |
JP2009212531A (ja) * | 2003-07-15 | 2009-09-17 | Bridgelux Inc | 化学気相成長反応装置 |
JP2007320849A (ja) * | 2006-06-01 | 2007-12-13 | Samsung Corning Co Ltd | GaNバルク単結晶の成長方法および成長装置 |
JP2010040696A (ja) * | 2008-08-04 | 2010-02-18 | Hitachi Cable Ltd | エピタキシャル成長用基板 |
JP2010062383A (ja) * | 2008-09-04 | 2010-03-18 | Sharp Corp | 気相成長装置及び気相成長方法 |
WO2010039352A2 (en) * | 2008-09-30 | 2010-04-08 | Motorola, Inc. | Method and apparatus for optimizing spectrum utilization by a cognitive radio network |
Also Published As
Publication number | Publication date |
---|---|
TWI398545B (zh) | 2013-06-11 |
KR20110120817A (ko) | 2011-11-04 |
US20110265723A1 (en) | 2011-11-03 |
TW201137158A (en) | 2011-11-01 |
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