JP2011517131A - 小ビームブランカ構成体 - Google Patents

小ビームブランカ構成体 Download PDF

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Publication number
JP2011517131A
JP2011517131A JP2011504450A JP2011504450A JP2011517131A JP 2011517131 A JP2011517131 A JP 2011517131A JP 2011504450 A JP2011504450 A JP 2011504450A JP 2011504450 A JP2011504450 A JP 2011504450A JP 2011517131 A JP2011517131 A JP 2011517131A
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JP
Japan
Prior art keywords
array
small
deflector
small beam
blanker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011504450A
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English (en)
Japanese (ja)
Inventor
ウィーランド、ヤン・ヤコ
ファン・フェーン、アレクサンダー・ヘンドリク・ビンセント
Original Assignee
マッパー・リソグラフィー・アイピー・ビー．ブイ．
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Application filed by マッパー・リソグラフィー・アイピー・ビー．ブイ． filed Critical マッパー・リソグラフィー・アイピー・ビー．ブイ．
Publication of JP2011517131A publication Critical patent/JP2011517131A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
JP2011504450A 2008-04-15 2009-04-15 小ビームブランカ構成体 Pending JP2011517131A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
US61/045,243 2008-04-15
PCT/EP2009/054468 WO2009127659A2 (en) 2008-04-15 2009-04-15 Beamlet blanker arrangement

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013024809A Division JP5384759B2 (ja) 2008-04-15 2013-02-12 小ビームブランカ構成体

Publications (1)

Publication Number Publication Date
JP2011517131A true JP2011517131A (ja) 2011-05-26

Family

ID=40786929

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2011504450A Pending JP2011517131A (ja) 2008-04-15 2009-04-15 小ビームブランカ構成体
JP2011504449A Active JP5268170B2 (ja) 2008-04-15 2009-04-15 投影レンズ構成体
JP2013024799A Active JP5475155B2 (ja) 2008-04-15 2013-02-12 投影レンズ構成体
JP2013024809A Active JP5384759B2 (ja) 2008-04-15 2013-02-12 小ビームブランカ構成体

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2011504449A Active JP5268170B2 (ja) 2008-04-15 2009-04-15 投影レンズ構成体
JP2013024799A Active JP5475155B2 (ja) 2008-04-15 2013-02-12 投影レンズ構成体
JP2013024809A Active JP5384759B2 (ja) 2008-04-15 2013-02-12 小ビームブランカ構成体

Country Status (7)

Country Link
EP (3) EP2281296A2 (https=)
JP (4) JP2011517131A (https=)
KR (4) KR101638766B1 (https=)
CN (2) CN102067271B (https=)
AT (1) ATE535932T1 (https=)
TW (3) TWI534849B (https=)
WO (2) WO2009127659A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014519724A (ja) * 2011-05-30 2014-08-14 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビーム装置
JP2020145401A (ja) * 2019-02-28 2020-09-10 株式会社東芝 マルチ電子ビーム装置

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CN102460632B (zh) 2009-05-20 2015-11-25 迈普尔平版印刷Ip有限公司 产生二级图案以供光刻处理的方法和使用该方法的图案产生器
EP2494579B1 (en) * 2009-10-26 2017-08-02 Mapper Lithography IP B.V. Charged particle multi-beamlet lithography system, modulation device, and method of manufacturing thereof
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101725299B1 (ko) 2010-10-26 2017-04-10 마퍼 리쏘그라피 아이피 비.브이. 변조 디바이스 및 이를 사용하는 하전 입자 멀티-빔렛 리소그래피 시스템
EP2638560B1 (en) * 2010-11-13 2017-02-22 Mapper Lithography IP B.V. Charged particle lithography system with aperture array cooling
US8604411B2 (en) 2010-11-13 2013-12-10 Mapper Lithography Ip B.V. Charged particle beam modulator
JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
JP6038882B2 (ja) 2011-04-20 2016-12-07 マッパー・リソグラフィー・アイピー・ビー．ブイ． 光ファイバの構成体及びこのような構成体を形成する方法
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US8936994B2 (en) * 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
US20130120724A1 (en) 2011-05-18 2013-05-16 Mapper Lithography Ip B.V. Method for splitting a pattern for use in a multi-beamlet lithography apparatus
JP2013016744A (ja) 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
CN103930829A (zh) 2011-09-12 2014-07-16 迈普尔平版印刷Ip有限公司 基板处理装置
NL2010759C2 (en) 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US9460260B2 (en) 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
KR102389365B1 (ko) * 2014-06-13 2022-04-22 인텔 코포레이션 Ｅ 빔 범용 커터
EP3155644A4 (en) * 2014-06-13 2018-02-28 Intel Corporation Ebeam align on the fly
US9390891B2 (en) 2014-08-15 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for charged particle lithography system
TW201618153A (zh) * 2014-09-03 2016-05-16 紐富來科技股份有限公司 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
JP6482650B2 (ja) * 2015-03-31 2019-03-13 富士フイルム株式会社 パターン形成方法、フォトマスクの製造方法及び電子デバイスの製造方法
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
WO2018117275A1 (en) * 2016-12-23 2018-06-28 Mapper Lithography Ip B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
US10840056B2 (en) * 2017-02-03 2020-11-17 Kla Corporation Multi-column scanning electron microscopy system
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
KR102649183B1 (ko) * 2017-10-02 2024-03-21 에이에스엠엘 네델란즈 비.브이. 하전 입자 빔들을 사용하는 장치
KR102771535B1 (ko) * 2018-03-09 2025-02-25 에이에스엠엘 네델란즈 비.브이. 신호 전자들의 개선된 검출 성능을 갖는 멀티-빔 검사 장치
WO2019211072A1 (en) 2018-05-01 2019-11-07 Asml Netherlands B.V. Multi-beam inspection apparatus
JP2021532545A (ja) 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． 複数の荷電粒子ビームのための装置
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
US11373838B2 (en) 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
WO2020141041A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Systems and methods for real time stereo imaging using multiple electron beams
WO2021123082A1 (en) * 2019-12-20 2021-06-24 Asml Netherlands B.V. Multi-modal operations for multi-beam inspection system
EP3893263A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus
EP3893264A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Charged particle assessment tool, inspection method
IL298348A (en) 2020-06-10 2023-01-01 Asml Netherlands Bv Interchangeable module for charged particle device
WO2022135926A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Electron lens
EP4156227A1 (en) * 2021-09-27 2023-03-29 ASML Netherlands B.V. Charged particle apparatus and method
TWI856626B (zh) * 2022-05-13 2024-09-21 日商紐富來科技股份有限公司 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法
EP4391009A1 (en) * 2022-12-21 2024-06-26 ASML Netherlands B.V. Charged particle device and charged particle apparatus
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WO2001035165A1 (en) * 1999-11-07 2001-05-17 Ion Diagnostics, Inc. Data path design for multiple electron beam lithography system
JP2004040076A (ja) * 2002-01-17 2004-02-05 Ims Nanofabrication Gmbh パターンを基板上に露光するマスクレス粒子ビーム装置
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JP2005322918A (ja) * 2004-04-30 2005-11-17 Ims Nanofabrication Gmbh 粒子ビーム処理のための新型のパターン画定法

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ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH11317357A (ja) * 1998-02-24 1999-11-16 Nikon Corp 電子線描画装置及びその描画方法
WO2001035165A1 (en) * 1999-11-07 2001-05-17 Ion Diagnostics, Inc. Data path design for multiple electron beam lithography system
US20040119021A1 (en) * 1999-11-23 2004-06-24 Ion Diagnostics Electron optics for multi-beam electron beam lithography tool
JP2004040076A (ja) * 2002-01-17 2004-02-05 Ims Nanofabrication Gmbh パターンを基板上に露光するマスクレス粒子ビーム装置
JP2004282038A (ja) * 2003-02-28 2004-10-07 Canon Inc 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
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JP2005322918A (ja) * 2004-04-30 2005-11-17 Ims Nanofabrication Gmbh 粒子ビーム処理のための新型のパターン画定法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014519724A (ja) * 2011-05-30 2014-08-14 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子マルチ小ビーム装置
US9607806B2 (en) 2011-05-30 2017-03-28 Mapper Lithography Ip B.V. Charged particle multi-beam apparatus including a manipulator device for manipulation of one or more charged particle beams
KR101842710B1 (ko) 2011-05-30 2018-03-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 다중 빔릿 장치
JP2020145401A (ja) * 2019-02-28 2020-09-10 株式会社東芝 マルチ電子ビーム装置
JP7111673B2 (ja) 2019-02-28 2022-08-02 株式会社東芝 マルチ電子ビーム装置

Also Published As

Publication number Publication date
JP5384759B2 (ja) 2014-01-08
KR20110015555A (ko) 2011-02-16
WO2009127659A2 (en) 2009-10-22
JP2013140998A (ja) 2013-07-18
ATE535932T1 (de) 2011-12-15
JP5268170B2 (ja) 2013-08-21
JP5475155B2 (ja) 2014-04-16
KR20110007199A (ko) 2011-01-21
JP2011517130A (ja) 2011-05-26
JP2013140997A (ja) 2013-07-18
EP2402979A2 (en) 2012-01-04
CN102067272B (zh) 2014-04-30
KR101605865B1 (ko) 2016-03-24
TWI474360B (zh) 2015-02-21
EP2281296A2 (en) 2011-02-09
EP2279515B1 (en) 2011-11-30
EP2402979A3 (en) 2012-06-27
EP2279515A1 (en) 2011-02-02
KR101678823B1 (ko) 2016-11-23
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
CN102067271A (zh) 2011-05-18
WO2009127658A1 (en) 2009-10-22
KR20150091417A (ko) 2015-08-10
CN102067272A (zh) 2011-05-18
TW201003711A (en) 2010-01-16
CN102067271B (zh) 2014-05-21
KR101638766B1 (ko) 2016-07-13
KR20150099617A (ko) 2015-08-31
TWI534849B (zh) 2016-05-21
EP2402979B1 (en) 2013-10-23
TW201003713A (en) 2010-01-16

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