TWI534849B - 投影透鏡配置 - Google Patents

投影透鏡配置 Download PDF

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Publication number
TWI534849B
TWI534849B TW104101464A TW104101464A TWI534849B TW I534849 B TWI534849 B TW I534849B TW 104101464 A TW104101464 A TW 104101464A TW 104101464 A TW104101464 A TW 104101464A TW I534849 B TWI534849 B TW I534849B
Authority
TW
Taiwan
Prior art keywords
beamlets
array
beamlet
apertures
projection lens
Prior art date
Application number
TW104101464A
Other languages
English (en)
Chinese (zh)
Other versions
TW201515044A (zh
Inventor
章 賈克 維藍 馬可羅
賓 艾利克山德 亨卓克 文森 凡
Original Assignee
瑪波微影Ｉｐ公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑪波微影Ｉｐ公司 filed Critical 瑪波微影Ｉｐ公司
Publication of TW201515044A publication Critical patent/TW201515044A/zh
Application granted granted Critical
Publication of TWI534849B publication Critical patent/TWI534849B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
TW104101464A 2008-04-15 2009-04-15 投影透鏡配置 TWI534849B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15

Publications (2)

Publication Number Publication Date
TW201515044A TW201515044A (zh) 2015-04-16
TWI534849B true TWI534849B (zh) 2016-05-21

Family

ID=40786929

Family Applications (3)

Application Number Title Priority Date Filing Date
TW104101464A TWI534849B (zh) 2008-04-15 2009-04-15 投影透鏡配置
TW98112444A TWI474360B (zh) 2008-04-15 2009-04-15 投影透鏡配置
TW098112445A TW201003713A (en) 2008-04-15 2009-04-15 Beamlet blanker arrangement

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW98112444A TWI474360B (zh) 2008-04-15 2009-04-15 投影透鏡配置
TW098112445A TW201003713A (en) 2008-04-15 2009-04-15 Beamlet blanker arrangement

Country Status (7)

Country Link
EP (3) EP2279515B1 (https=)
JP (4) JP5268170B2 (https=)
KR (4) KR101638766B1 (https=)
CN (2) CN102067271B (https=)
AT (1) ATE535932T1 (https=)
TW (3) TWI534849B (https=)
WO (2) WO2009127658A1 (https=)

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CN113228224A (zh) * 2018-12-31 2021-08-06 Asml荷兰有限公司 使用多个电子束进行实时立体成像的系统和方法
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TWI773030B (zh) * 2019-12-20 2022-08-01 荷蘭商Ａｓｍｌ荷蘭公司 用於多射束檢測系統之多模操作
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Publication number Priority date Publication date Assignee Title
TWI883891B (zh) * 2020-04-06 2025-05-11 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子評估工具及檢測方法
US12476069B2 (en) 2020-04-06 2025-11-18 Asml Netherlands B.V. Charged particle assessment tool, inspection method

Also Published As

Publication number Publication date
ATE535932T1 (de) 2011-12-15
TWI474360B (zh) 2015-02-21
KR20150099617A (ko) 2015-08-31
JP2013140998A (ja) 2013-07-18
EP2279515A1 (en) 2011-02-02
CN102067272A (zh) 2011-05-18
CN102067272B (zh) 2014-04-30
TW201003713A (en) 2010-01-16
EP2402979B1 (en) 2013-10-23
JP2013140997A (ja) 2013-07-18
EP2402979A2 (en) 2012-01-04
KR101638766B1 (ko) 2016-07-13
JP5475155B2 (ja) 2014-04-16
KR101605865B1 (ko) 2016-03-24
EP2402979A3 (en) 2012-06-27
CN102067271B (zh) 2014-05-21
KR20110015555A (ko) 2011-02-16
KR20110007199A (ko) 2011-01-21
EP2281296A2 (en) 2011-02-09
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
JP5384759B2 (ja) 2014-01-08
KR20150091417A (ko) 2015-08-10
JP5268170B2 (ja) 2013-08-21
CN102067271A (zh) 2011-05-18
JP2011517130A (ja) 2011-05-26
JP2011517131A (ja) 2011-05-26
WO2009127659A2 (en) 2009-10-22
KR101678823B1 (ko) 2016-11-23
TW201003711A (en) 2010-01-16
WO2009127658A1 (en) 2009-10-22
EP2279515B1 (en) 2011-11-30

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