ATE535932T1 - Projektionslinsenanordnung - Google Patents

Projektionslinsenanordnung

Info

Publication number
ATE535932T1
ATE535932T1 AT09733141T AT09733141T ATE535932T1 AT E535932 T1 ATE535932 T1 AT E535932T1 AT 09733141 T AT09733141 T AT 09733141T AT 09733141 T AT09733141 T AT 09733141T AT E535932 T1 ATE535932 T1 AT E535932T1
Authority
AT
Austria
Prior art keywords
sub
beamlets
charged particle
beamlet
beams
Prior art date
Application number
AT09733141T
Other languages
German (de)
English (en)
Inventor
Jan Wieland
Veen Alexander Van
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE535932T1 publication Critical patent/ATE535932T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
AT09733141T 2008-04-15 2009-04-15 Projektionslinsenanordnung ATE535932T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
PCT/EP2009/054467 WO2009127658A1 (en) 2008-04-15 2009-04-15 Projection lens arrangement

Publications (1)

Publication Number Publication Date
ATE535932T1 true ATE535932T1 (de) 2011-12-15

Family

ID=40786929

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09733141T ATE535932T1 (de) 2008-04-15 2009-04-15 Projektionslinsenanordnung

Country Status (7)

Country Link
EP (3) EP2279515B1 (https=)
JP (4) JP5268170B2 (https=)
KR (4) KR101638766B1 (https=)
CN (2) CN102067271B (https=)
AT (1) ATE535932T1 (https=)
TW (3) TWI534849B (https=)
WO (2) WO2009127658A1 (https=)

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WO2012055936A1 (en) 2010-10-26 2012-05-03 Mapper Lithography Ip B.V. Lithography system, modulation device and method of manufacturing a fiber fixation substrate
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
KR101755577B1 (ko) * 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
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TWI514089B (zh) 2011-04-28 2015-12-21 瑪波微影Ｉｐ公司 在微影系統中用於轉移基板的設備
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NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP2013016744A (ja) 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
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US9460260B2 (en) 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
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KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
KR102024614B1 (ko) * 2015-03-31 2019-09-24 후지필름 가부시키가이샤 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
WO2018117275A1 (en) * 2016-12-23 2018-06-28 Mapper Lithography Ip B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
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US10176965B1 (en) 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
EP3692562A1 (en) * 2017-10-02 2020-08-12 ASML Netherlands B.V. An apparatus using charged particle beams
JP7181305B2 (ja) 2018-03-09 2022-11-30 エーエスエムエル ネザーランズ ビー．ブイ． 信号電子検出性能を向上させたマルチビーム検査装置
CN112041965B (zh) * 2018-05-01 2025-01-14 Asml荷兰有限公司 多束检查装置
WO2020030483A1 (en) 2018-08-09 2020-02-13 Asml Netherlands B.V. An apparatus for multiple charged-particle beams
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
US11373838B2 (en) * 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
CN113228224A (zh) * 2018-12-31 2021-08-06 Asml荷兰有限公司 使用多个电子束进行实时立体成像的系统和方法
US10854424B2 (en) * 2019-02-28 2020-12-01 Kabushiki Kaisha Toshiba Multi-electron beam device
TWI773030B (zh) * 2019-12-20 2022-08-01 荷蘭商Ａｓｍｌ荷蘭公司 用於多射束檢測系統之多模操作
EP3893263A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus
EP3893264A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Charged particle assessment tool, inspection method
KR20230008209A (ko) 2020-06-10 2023-01-13 에이에스엠엘 네델란즈 비.브이. 하전 입자 장치용 교체 가능 모듈
JP2024501655A (ja) * 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
EP4156227A1 (en) * 2021-09-27 2023-03-29 ASML Netherlands B.V. Charged particle apparatus and method
TWI856626B (zh) * 2022-05-13 2024-09-21 日商紐富來科技股份有限公司 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法
EP4391009A1 (en) * 2022-12-21 2024-06-26 ASML Netherlands B.V. Charged particle device and charged particle apparatus
EP4723158A1 (en) * 2024-10-02 2026-04-08 ASML Netherlands B.V. Charged particle-optical device and method of assessing

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Also Published As

Publication number Publication date
TWI474360B (zh) 2015-02-21
KR20150099617A (ko) 2015-08-31
JP2013140998A (ja) 2013-07-18
EP2279515A1 (en) 2011-02-02
CN102067272A (zh) 2011-05-18
CN102067272B (zh) 2014-04-30
TW201003713A (en) 2010-01-16
EP2402979B1 (en) 2013-10-23
JP2013140997A (ja) 2013-07-18
EP2402979A2 (en) 2012-01-04
KR101638766B1 (ko) 2016-07-13
JP5475155B2 (ja) 2014-04-16
KR101605865B1 (ko) 2016-03-24
EP2402979A3 (en) 2012-06-27
CN102067271B (zh) 2014-05-21
KR20110015555A (ko) 2011-02-16
KR20110007199A (ko) 2011-01-21
EP2281296A2 (en) 2011-02-09
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
JP5384759B2 (ja) 2014-01-08
KR20150091417A (ko) 2015-08-10
JP5268170B2 (ja) 2013-08-21
CN102067271A (zh) 2011-05-18
JP2011517130A (ja) 2011-05-26
JP2011517131A (ja) 2011-05-26
WO2009127659A2 (en) 2009-10-22
KR101678823B1 (ko) 2016-11-23
TWI534849B (zh) 2016-05-21
TW201003711A (en) 2010-01-16
WO2009127658A1 (en) 2009-10-22
EP2279515B1 (en) 2011-11-30

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