JP2011517130A5 - - Google Patents
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- Publication number
- JP2011517130A5 JP2011517130A5 JP2011504449A JP2011504449A JP2011517130A5 JP 2011517130 A5 JP2011517130 A5 JP 2011517130A5 JP 2011504449 A JP2011504449 A JP 2011504449A JP 2011504449 A JP2011504449 A JP 2011504449A JP 2011517130 A5 JP2011517130 A5 JP 2011517130A5
- Authority
- JP
- Japan
- Prior art keywords
- array
- small
- beams
- beamlets
- projection lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 claims description 19
- 238000007493 shaping process Methods 0.000 claims description 13
- 238000003491 array Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4524308P | 2008-04-15 | 2008-04-15 | |
| US61/045,243 | 2008-04-15 | ||
| PCT/EP2009/054467 WO2009127658A1 (en) | 2008-04-15 | 2009-04-15 | Projection lens arrangement |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013024799A Division JP5475155B2 (ja) | 2008-04-15 | 2013-02-12 | 投影レンズ構成体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011517130A JP2011517130A (ja) | 2011-05-26 |
| JP2011517130A5 true JP2011517130A5 (https=) | 2012-06-07 |
| JP5268170B2 JP5268170B2 (ja) | 2013-08-21 |
Family
ID=40786929
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011504449A Active JP5268170B2 (ja) | 2008-04-15 | 2009-04-15 | 投影レンズ構成体 |
| JP2011504450A Pending JP2011517131A (ja) | 2008-04-15 | 2009-04-15 | 小ビームブランカ構成体 |
| JP2013024799A Active JP5475155B2 (ja) | 2008-04-15 | 2013-02-12 | 投影レンズ構成体 |
| JP2013024809A Active JP5384759B2 (ja) | 2008-04-15 | 2013-02-12 | 小ビームブランカ構成体 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011504450A Pending JP2011517131A (ja) | 2008-04-15 | 2009-04-15 | 小ビームブランカ構成体 |
| JP2013024799A Active JP5475155B2 (ja) | 2008-04-15 | 2013-02-12 | 投影レンズ構成体 |
| JP2013024809A Active JP5384759B2 (ja) | 2008-04-15 | 2013-02-12 | 小ビームブランカ構成体 |
Country Status (7)
| Country | Link |
|---|---|
| EP (3) | EP2279515B1 (https=) |
| JP (4) | JP5268170B2 (https=) |
| KR (4) | KR101638766B1 (https=) |
| CN (2) | CN102067271B (https=) |
| AT (1) | ATE535932T1 (https=) |
| TW (3) | TWI534849B (https=) |
| WO (2) | WO2009127658A1 (https=) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2433294B1 (en) | 2009-05-20 | 2016-07-27 | Mapper Lithography IP B.V. | Method of generating a two-level pattern for lithographic processing and pattern generator using the same |
| NL2005584C2 (en) * | 2009-10-26 | 2014-09-04 | Mapper Lithography Ip Bv | Charged particle multi-beamlet lithography system with modulation device. |
| JP5636238B2 (ja) * | 2010-09-22 | 2014-12-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| WO2012055936A1 (en) | 2010-10-26 | 2012-05-03 | Mapper Lithography Ip B.V. | Lithography system, modulation device and method of manufacturing a fiber fixation substrate |
| WO2012062934A1 (en) | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Charged particle beam modulator |
| KR101755577B1 (ko) * | 2010-11-13 | 2017-07-07 | 마퍼 리쏘그라피 아이피 비.브이. | 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템 |
| JP2012204624A (ja) * | 2011-03-25 | 2012-10-22 | Canon Inc | 描画装置、および、物品の製造方法 |
| JP6038882B2 (ja) | 2011-04-20 | 2016-12-07 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 光ファイバの構成体及びこのような構成体を形成する方法 |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| TWI514089B (zh) | 2011-04-28 | 2015-12-21 | 瑪波微影Ｉｐ公司 | 在微影系統中用於轉移基板的設備 |
| EP2710620A1 (en) | 2011-05-18 | 2014-03-26 | Mapper Lithography IP B.V. | Method for splitting a pattern for use in a multi-beamlet lithography apparatus |
| NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
| JP2013016744A (ja) | 2011-07-06 | 2013-01-24 | Canon Inc | 描画装置及びデバイスの製造方法 |
| US9703213B2 (en) | 2011-09-12 | 2017-07-11 | Mapper Lithography Ip B.V. | Substrate processing apparatus |
| NL2010759C2 (en) | 2012-05-14 | 2015-08-25 | Mapper Lithography Ip Bv | Modulation device and power supply arrangement. |
| US9460260B2 (en) | 2014-02-21 | 2016-10-04 | Mapper Lithography Ip B.V. | Enhanced stitching by overlap dose and feature reduction |
| JP6262024B2 (ja) * | 2014-03-04 | 2018-01-17 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
| US10290528B2 (en) | 2014-06-13 | 2019-05-14 | Intel Corporation | Ebeam align on the fly |
| EP3155647A4 (en) * | 2014-06-13 | 2018-01-24 | Intel Corporation | Ebeam universal cutter |
| US9390891B2 (en) * | 2014-08-15 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for charged particle lithography system |
| TW201618153A (zh) * | 2014-09-03 | 2016-05-16 | 紐富來科技股份有限公司 | 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法 |
| KR20170084240A (ko) | 2014-11-14 | 2017-07-19 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법 |
| KR102024614B1 (ko) * | 2015-03-31 | 2019-09-24 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법 |
| JP2016207925A (ja) | 2015-04-27 | 2016-12-08 | 株式会社アドバンテスト | 素子、製造方法、および露光装置 |
| KR102358009B1 (ko) * | 2015-11-10 | 2022-02-04 | 삼성전자주식회사 | 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법 |
| JP6589597B2 (ja) * | 2015-11-25 | 2019-10-16 | 株式会社ニューフレアテクノロジー | アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置 |
| JP6682278B2 (ja) | 2016-01-19 | 2020-04-15 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置 |
| WO2018117275A1 (en) * | 2016-12-23 | 2018-06-28 | Mapper Lithography Ip B.V. | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| US10840056B2 (en) * | 2017-02-03 | 2020-11-17 | Kla Corporation | Multi-column scanning electron microscopy system |
| US10176965B1 (en) | 2017-07-05 | 2019-01-08 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets |
| EP3692562A1 (en) * | 2017-10-02 | 2020-08-12 | ASML Netherlands B.V. | An apparatus using charged particle beams |
| JP7181305B2 (ja) | 2018-03-09 | 2022-11-30 | エーエスエムエル ネザーランズ ビー．ブイ． | 信号電子検出性能を向上させたマルチビーム検査装置 |
| CN112041965B (zh) * | 2018-05-01 | 2025-01-14 | Asml荷兰有限公司 | 多束检查装置 |
| WO2020030483A1 (en) | 2018-08-09 | 2020-02-13 | Asml Netherlands B.V. | An apparatus for multiple charged-particle beams |
| EP3624167A1 (en) * | 2018-09-14 | 2020-03-18 | FEI Company | Multi-electron-beam imaging appartus with improved perormance |
| US11373838B2 (en) * | 2018-10-17 | 2022-06-28 | Kla Corporation | Multi-beam electron characterization tool with telecentric illumination |
| CN113228224A (zh) * | 2018-12-31 | 2021-08-06 | Asml荷兰有限公司 | 使用多个电子束进行实时立体成像的系统和方法 |
| US10854424B2 (en) * | 2019-02-28 | 2020-12-01 | Kabushiki Kaisha Toshiba | Multi-electron beam device |
| TWI773030B (zh) * | 2019-12-20 | 2022-08-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | 用於多射束檢測系統之多模操作 |
| EP3893263A1 (en) * | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus |
| EP3893264A1 (en) * | 2020-04-06 | 2021-10-13 | ASML Netherlands B.V. | Charged particle assessment tool, inspection method |
| KR20230008209A (ko) | 2020-06-10 | 2023-01-13 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 장치용 교체 가능 모듈 |
| JP2024501655A (ja) * | 2020-12-23 | 2024-01-15 | エーエスエムエル ネザーランズ ビー．ブイ． | 電子レンズ |
| EP4156227A1 (en) * | 2021-09-27 | 2023-03-29 | ASML Netherlands B.V. | Charged particle apparatus and method |
| TWI856626B (zh) * | 2022-05-13 | 2024-09-21 | 日商紐富來科技股份有限公司 | 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法 |
| EP4391009A1 (en) * | 2022-12-21 | 2024-06-26 | ASML Netherlands B.V. | Charged particle device and charged particle apparatus |
| EP4723158A1 (en) * | 2024-10-02 | 2026-04-08 | ASML Netherlands B.V. | Charged particle-optical device and method of assessing |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3796317B2 (ja) | 1996-06-12 | 2006-07-12 | キヤノン株式会社 | 電子ビーム露光方法及びそれを用いたデバイス製造方法 |
| US6014200A (en) * | 1998-02-24 | 2000-01-11 | Nikon Corporation | High throughput electron beam lithography system |
| WO2001035165A1 (en) * | 1999-11-07 | 2001-05-17 | Ion Diagnostics, Inc. | Data path design for multiple electron beam lithography system |
| WO2001039243A1 (en) * | 1999-11-23 | 2001-05-31 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
| JP2001168016A (ja) | 1999-12-13 | 2001-06-22 | Canon Inc | 荷電粒子線露光装置と露光システム及びそれらの制御方法及びデバイス製造方法 |
| US6768125B2 (en) * | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| ATE538412T1 (de) | 2002-10-25 | 2012-01-15 | Mapper Lithography Ip Bv | Lithographisches system |
| AU2003276779A1 (en) | 2002-10-30 | 2004-05-25 | Mapper Lithography Ip B.V. | Electron beam exposure system |
| JP2004282038A (ja) * | 2003-02-28 | 2004-10-07 | Canon Inc | 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置 |
| KR101068607B1 (ko) | 2003-03-10 | 2011-09-30 | 마퍼 리쏘그라피 아이피 비.브이. | 복수 개의 빔렛 발생 장치 |
| ATE524822T1 (de) * | 2003-05-28 | 2011-09-15 | Mapper Lithography Ip Bv | Belichtungsverfahren für strahlen aus geladenen teilchen |
| JP2005032837A (ja) * | 2003-07-08 | 2005-02-03 | Canon Inc | 荷電粒子描画方法及び該方法を用いたデバイス製造方法 |
| JP4313145B2 (ja) * | 2003-10-07 | 2009-08-12 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
| GB2408143B (en) * | 2003-10-20 | 2006-11-15 | Ims Nanofabrication Gmbh | Charged-particle multi-beam exposure apparatus |
| GB2414111B (en) * | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| JP2008026695A (ja) * | 2006-07-24 | 2008-02-07 | Ushio Inc | 投影露光装置 |
-
2009
- 2009-04-15 JP JP2011504449A patent/JP5268170B2/ja active Active
- 2009-04-15 CN CN200980122615.9A patent/CN102067271B/zh not_active Expired - Fee Related
- 2009-04-15 EP EP09733141A patent/EP2279515B1/en active Active
- 2009-04-15 KR KR1020157020023A patent/KR101638766B1/ko active Active
- 2009-04-15 WO PCT/EP2009/054467 patent/WO2009127658A1/en not_active Ceased
- 2009-04-15 CN CN200980122616.3A patent/CN102067272B/zh active Active
- 2009-04-15 TW TW104101464A patent/TWI534849B/zh active
- 2009-04-15 KR KR1020107025644A patent/KR101605865B1/ko active Active
- 2009-04-15 KR KR1020107025645A patent/KR20110015555A/ko not_active Withdrawn
- 2009-04-15 TW TW98112444A patent/TWI474360B/zh active
- 2009-04-15 EP EP09732178A patent/EP2281296A2/en not_active Withdrawn
- 2009-04-15 EP EP11183370.3A patent/EP2402979B1/en active Active
- 2009-04-15 AT AT09733141T patent/ATE535932T1/de active
- 2009-04-15 JP JP2011504450A patent/JP2011517131A/ja active Pending
- 2009-04-15 WO PCT/EP2009/054468 patent/WO2009127659A2/en not_active Ceased
- 2009-04-15 KR KR1020157021939A patent/KR101678823B1/ko active Active
- 2009-04-15 TW TW098112445A patent/TW201003713A/zh unknown
-
2013
- 2013-02-12 JP JP2013024799A patent/JP5475155B2/ja active Active
- 2013-02-12 JP JP2013024809A patent/JP5384759B2/ja active Active
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