CN102067271B - 子束阻断器装置 - Google Patents

子束阻断器装置 Download PDF

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Publication number
CN102067271B
CN102067271B CN200980122615.9A CN200980122615A CN102067271B CN 102067271 B CN102067271 B CN 102067271B CN 200980122615 A CN200980122615 A CN 200980122615A CN 102067271 B CN102067271 B CN 102067271B
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CN
China
Prior art keywords
beamlets
array
beamlet
control signal
deflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200980122615.9A
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English (en)
Chinese (zh)
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CN102067271A (zh
Inventor
M·J-J·威兰
亚历山大·H·V·范维恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
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Mapper Lithopraphy IP BV
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Publication of CN102067271A publication Critical patent/CN102067271A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
CN200980122615.9A 2008-04-15 2009-04-15 子束阻断器装置 Expired - Fee Related CN102067271B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
US61/045,243 2008-04-15
PCT/EP2009/054468 WO2009127659A2 (en) 2008-04-15 2009-04-15 Beamlet blanker arrangement

Publications (2)

Publication Number Publication Date
CN102067271A CN102067271A (zh) 2011-05-18
CN102067271B true CN102067271B (zh) 2014-05-21

Family

ID=40786929

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200980122615.9A Expired - Fee Related CN102067271B (zh) 2008-04-15 2009-04-15 子束阻断器装置
CN200980122616.3A Active CN102067272B (zh) 2008-04-15 2009-04-15 投影透镜装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200980122616.3A Active CN102067272B (zh) 2008-04-15 2009-04-15 投影透镜装置

Country Status (7)

Country Link
EP (3) EP2279515B1 (https=)
JP (4) JP5268170B2 (https=)
KR (4) KR101638766B1 (https=)
CN (2) CN102067271B (https=)
AT (1) ATE535932T1 (https=)
TW (3) TWI534849B (https=)
WO (2) WO2009127658A1 (https=)

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WO2012055936A1 (en) 2010-10-26 2012-05-03 Mapper Lithography Ip B.V. Lithography system, modulation device and method of manufacturing a fiber fixation substrate
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JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
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KR102024614B1 (ko) * 2015-03-31 2019-09-24 후지필름 가부시키가이샤 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
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US10176965B1 (en) 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
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JP7181305B2 (ja) 2018-03-09 2022-11-30 エーエスエムエル ネザーランズ ビー．ブイ． 信号電子検出性能を向上させたマルチビーム検査装置
CN112041965B (zh) * 2018-05-01 2025-01-14 Asml荷兰有限公司 多束检查装置
WO2020030483A1 (en) 2018-08-09 2020-02-13 Asml Netherlands B.V. An apparatus for multiple charged-particle beams
EP3624167A1 (en) * 2018-09-14 2020-03-18 FEI Company Multi-electron-beam imaging appartus with improved perormance
US11373838B2 (en) * 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
CN113228224A (zh) * 2018-12-31 2021-08-06 Asml荷兰有限公司 使用多个电子束进行实时立体成像的系统和方法
US10854424B2 (en) * 2019-02-28 2020-12-01 Kabushiki Kaisha Toshiba Multi-electron beam device
TWI773030B (zh) * 2019-12-20 2022-08-01 荷蘭商Ａｓｍｌ荷蘭公司 用於多射束檢測系統之多模操作
EP3893263A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Aperture assembly, beam manipulator unit, method of manipulating charged particle beams, and charged particle projection apparatus
EP3893264A1 (en) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Charged particle assessment tool, inspection method
KR20230008209A (ko) 2020-06-10 2023-01-13 에이에스엠엘 네델란즈 비.브이. 하전 입자 장치용 교체 가능 모듈
JP2024501655A (ja) * 2020-12-23 2024-01-15 エーエスエムエル ネザーランズ ビー．ブイ． 電子レンズ
EP4156227A1 (en) * 2021-09-27 2023-03-29 ASML Netherlands B.V. Charged particle apparatus and method
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Also Published As

Publication number Publication date
ATE535932T1 (de) 2011-12-15
TWI474360B (zh) 2015-02-21
KR20150099617A (ko) 2015-08-31
JP2013140998A (ja) 2013-07-18
EP2279515A1 (en) 2011-02-02
CN102067272A (zh) 2011-05-18
CN102067272B (zh) 2014-04-30
TW201003713A (en) 2010-01-16
EP2402979B1 (en) 2013-10-23
JP2013140997A (ja) 2013-07-18
EP2402979A2 (en) 2012-01-04
KR101638766B1 (ko) 2016-07-13
JP5475155B2 (ja) 2014-04-16
KR101605865B1 (ko) 2016-03-24
EP2402979A3 (en) 2012-06-27
KR20110015555A (ko) 2011-02-16
KR20110007199A (ko) 2011-01-21
EP2281296A2 (en) 2011-02-09
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
JP5384759B2 (ja) 2014-01-08
KR20150091417A (ko) 2015-08-10
JP5268170B2 (ja) 2013-08-21
CN102067271A (zh) 2011-05-18
JP2011517130A (ja) 2011-05-26
JP2011517131A (ja) 2011-05-26
WO2009127659A2 (en) 2009-10-22
KR101678823B1 (ko) 2016-11-23
TWI534849B (zh) 2016-05-21
TW201003711A (en) 2010-01-16
WO2009127658A1 (en) 2009-10-22
EP2279515B1 (en) 2011-11-30

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Inventor after: M * J-J * Weilan

Inventor after: Alexander H. V Van Wien

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