JP2011516620A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011516620A5 JP2011516620A5 JP2010548782A JP2010548782A JP2011516620A5 JP 2011516620 A5 JP2011516620 A5 JP 2011516620A5 JP 2010548782 A JP2010548782 A JP 2010548782A JP 2010548782 A JP2010548782 A JP 2010548782A JP 2011516620 A5 JP2011516620 A5 JP 2011516620A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- microelectronic substrate
- cleaning
- weight
- tetrafluoroborate ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 58
- 238000004140 cleaning Methods 0.000 claims description 31
- 238000004377 microelectronic Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- -1 tetrafluoroborate ions Chemical class 0.000 claims description 22
- 150000003457 sulfones Chemical class 0.000 claims description 13
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- 150000005846 sugar alcohols Polymers 0.000 claims description 9
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 241000282376 Panthera tigris Species 0.000 claims 6
- 238000001465 metallisation Methods 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 239000002904 solvent Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3244908P | 2008-02-29 | 2008-02-29 | |
| US61/032,449 | 2008-02-29 | ||
| PCT/US2009/033148 WO2009108474A1 (en) | 2008-02-29 | 2009-02-05 | Microelectronic substrate cleaning compositions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011516620A JP2011516620A (ja) | 2011-05-26 |
| JP2011516620A5 true JP2011516620A5 (enExample) | 2012-03-22 |
| JP5512554B2 JP5512554B2 (ja) | 2014-06-04 |
Family
ID=40419175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010548782A Active JP5512554B2 (ja) | 2008-02-29 | 2009-02-05 | マイクロエレクトロニクス基板洗浄用組成物 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US8168577B2 (enExample) |
| EP (1) | EP2247672B1 (enExample) |
| JP (1) | JP5512554B2 (enExample) |
| KR (1) | KR101570256B1 (enExample) |
| CN (1) | CN101959977B (enExample) |
| BR (1) | BRPI0908905A2 (enExample) |
| CA (1) | CA2716641A1 (enExample) |
| IL (1) | IL207605A (enExample) |
| TW (1) | TW200942608A (enExample) |
| WO (1) | WO2009108474A1 (enExample) |
| ZA (1) | ZA201005419B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101838483B (zh) * | 2010-05-11 | 2012-07-04 | 华北电网有限公司北京超高压公司 | 一种溶解型防污闪涂层清除剂及其制备方法 |
| KR102475619B1 (ko) * | 2017-03-31 | 2022-12-07 | 간또 가가꾸 가부시끼가이샤 | 세정액 조성물 |
| CN115386954A (zh) * | 2022-09-17 | 2022-11-25 | 中国科学院新疆理化技术研究所 | 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4401747A (en) | 1982-09-02 | 1983-08-30 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
| US4491530A (en) | 1983-05-20 | 1985-01-01 | Allied Corporation | Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper |
| US5480585A (en) | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
| US5568461A (en) * | 1994-04-20 | 1996-10-22 | Matsushita Electric Industrial Co., Ltd. | Optical information recording and reproducing apparatus |
| JPH07311469A (ja) * | 1994-05-17 | 1995-11-28 | Hitachi Chem Co Ltd | ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法 |
| US5571447A (en) | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
| US6043206A (en) | 1996-10-19 | 2000-03-28 | Samsung Electronics Co., Ltd. | Solutions for cleaning integrated circuit substrates |
| KR100248113B1 (ko) * | 1997-01-21 | 2000-03-15 | 이기원 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
| US6150282A (en) | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
| US6432209B2 (en) | 1998-03-03 | 2002-08-13 | Silicon Valley Chemlabs | Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates |
| JPH11323394A (ja) | 1998-05-14 | 1999-11-26 | Texas Instr Japan Ltd | 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法 |
| KR100288769B1 (ko) | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
| US6828289B2 (en) | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
| US6761835B2 (en) | 2000-07-07 | 2004-07-13 | Tdk Corporation | Phosphor multilayer and EL panel |
| US6777380B2 (en) | 2000-07-10 | 2004-08-17 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US20030022800A1 (en) | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
| KR100958068B1 (ko) * | 2002-06-07 | 2010-05-14 | 말린크로트 베이커, 인코포레이티드 | 마이크로일렉트로닉 세정 및 반사방지 코팅 제거제 조성물 |
| US7192860B2 (en) | 2002-06-20 | 2007-03-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
| US6677286B1 (en) | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| US7166419B2 (en) | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
| JP4620680B2 (ja) * | 2003-10-29 | 2011-01-26 | マリンクロッド・ベイカー・インコーポレイテッド | ハロゲン化金属の腐食阻害剤を含有するアルカリ性のプラズマエッチング／灰化後の残渣の除去剤およびフォトレジスト剥離組成物 |
| US8030263B2 (en) | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| JP2006041446A (ja) * | 2004-07-30 | 2006-02-09 | Sumitomo Chemical Co Ltd | 電子部品洗浄液 |
| WO2006065256A1 (en) * | 2004-12-10 | 2006-06-22 | Mallinckrodt Baker, Inc. | Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors |
| CN101228481B (zh) | 2005-02-25 | 2012-12-05 | Ekc技术公司 | 从包括铜和低k电介体的基片上除去抗蚀剂、蚀刻残余物和氧化铜的方法 |
| EP1875493A2 (en) * | 2005-04-04 | 2008-01-09 | MALLINCKRODT BAKER, Inc. | Composition for cleaning ion implanted photoresist in front end of line applications |
| JP2006310603A (ja) * | 2005-04-28 | 2006-11-09 | Nissan Chem Ind Ltd | ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法 |
| US20090212021A1 (en) | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| KR100655647B1 (ko) * | 2005-07-04 | 2006-12-08 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법 |
| CN101356629B (zh) * | 2005-11-09 | 2012-06-06 | 高级技术材料公司 | 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法 |
| US7582508B2 (en) | 2006-05-31 | 2009-09-01 | Byoung-Choo Park | Method for manufacturing an organic semiconductor device that utilizes ionic salt |
| WO2008023858A1 (en) | 2006-08-25 | 2008-02-28 | Hanwha Chemical Corporation | Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor |
| US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| KR101449774B1 (ko) | 2006-12-21 | 2014-10-14 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭 후 잔류물의 제거를 위한 액체 세정제 |
| US8026201B2 (en) | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
-
2009
- 2009-02-05 EP EP09714861.3A patent/EP2247672B1/en not_active Not-in-force
- 2009-02-05 JP JP2010548782A patent/JP5512554B2/ja active Active
- 2009-02-05 KR KR1020107019104A patent/KR101570256B1/ko active Active
- 2009-02-05 CN CN2009801068386A patent/CN101959977B/zh active Active
- 2009-02-05 WO PCT/US2009/033148 patent/WO2009108474A1/en not_active Ceased
- 2009-02-05 CA CA2716641A patent/CA2716641A1/en not_active Abandoned
- 2009-02-05 US US12/811,257 patent/US8168577B2/en not_active Expired - Fee Related
- 2009-02-05 BR BRPI0908905A patent/BRPI0908905A2/pt not_active IP Right Cessation
- 2009-02-25 TW TW098106023A patent/TW200942608A/zh unknown
-
2010
- 2010-07-29 ZA ZA2010/05419A patent/ZA201005419B/en unknown
- 2010-08-12 IL IL207605A patent/IL207605A/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102058426B1 (ko) | 화학적 기계적 연마 후 제제 및 사용 방법 | |
| US10301580B2 (en) | Stripping compositions having high WN/W etching selectivity | |
| KR100857865B1 (ko) | 세정 제제 | |
| JP4787342B2 (ja) | アミノベンゼンスルホン酸を含む半水溶性の剥離および洗浄組成物 | |
| JP6612891B2 (ja) | 洗浄配合 | |
| JP7846990B2 (ja) | 半導体基材のための洗浄組成物 | |
| JP2019518986A (ja) | 半導体基板からフォトレジストを除去するための剥離組成物 | |
| JP5801594B2 (ja) | 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法 | |
| CN102732393A (zh) | 清洁制剂和使用该清洁制剂的方法 | |
| EP3143117B1 (en) | Tin pull-back and cleaning composition | |
| TW200428512A (en) | Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing | |
| JP5674373B2 (ja) | 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法 | |
| KR101831452B1 (ko) | 다목적 산성, 유기 용매 기반의 마이크로전자 세정 조성물 | |
| WO2015116679A1 (en) | Post chemical mechanical polishing formulations and method of use | |
| JP2012084917A (ja) | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 | |
| JP2008519310A (ja) | アルミニウム含有基板に使用するためのポストエッチ洗浄組成物 | |
| CN101959977A (zh) | 微电子基底清洁组合物 | |
| KR20160044852A (ko) | 금속막용 세정제 조성물 | |
| CN119020117B (zh) | 去除半导体基材灰化后残留物的组合物及方法 | |
| WO2011060617A1 (zh) | 一种厚膜光刻胶清洗液及其清洗方法 |