TW200942608A - Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion - Google Patents

Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion

Info

Publication number
TW200942608A
TW200942608A TW098106023A TW98106023A TW200942608A TW 200942608 A TW200942608 A TW 200942608A TW 098106023 A TW098106023 A TW 098106023A TW 98106023 A TW98106023 A TW 98106023A TW 200942608 A TW200942608 A TW 200942608A
Authority
TW
Taiwan
Prior art keywords
based anti
silicon
tetrafluoroborate ion
compositions containing
reflective coating
Prior art date
Application number
TW098106023A
Other languages
English (en)
Inventor
William R Gemmill
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of TW200942608A publication Critical patent/TW200942608A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
TW098106023A 2008-02-29 2009-02-25 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion TW200942608A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3244908P 2008-02-29 2008-02-29

Publications (1)

Publication Number Publication Date
TW200942608A true TW200942608A (en) 2009-10-16

Family

ID=40419175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106023A TW200942608A (en) 2008-02-29 2009-02-25 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion

Country Status (11)

Country Link
US (1) US8168577B2 (zh)
EP (1) EP2247672B1 (zh)
JP (1) JP5512554B2 (zh)
KR (1) KR101570256B1 (zh)
CN (1) CN101959977B (zh)
BR (1) BRPI0908905A2 (zh)
CA (1) CA2716641A1 (zh)
IL (1) IL207605A (zh)
TW (1) TW200942608A (zh)
WO (1) WO2009108474A1 (zh)
ZA (1) ZA201005419B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838483B (zh) * 2010-05-11 2012-07-04 华北电网有限公司北京超高压公司 一种溶解型防污闪涂层清除剂及其制备方法
US11046910B2 (en) * 2017-03-31 2021-06-29 Kanto Kagaku Kabushiki Kaisha Cleaning solution composition
CN115386954A (zh) * 2022-09-17 2022-11-25 中国科学院新疆理化技术研究所 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401747A (en) 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4491530A (en) 1983-05-20 1985-01-01 Allied Corporation Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper
US5480585A (en) 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
US5568461A (en) * 1994-04-20 1996-10-22 Matsushita Electric Industrial Co., Ltd. Optical information recording and reproducing apparatus
JPH07311469A (ja) * 1994-05-17 1995-11-28 Hitachi Chem Co Ltd ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法
US5571447A (en) 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6043206A (en) 1996-10-19 2000-03-28 Samsung Electronics Co., Ltd. Solutions for cleaning integrated circuit substrates
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US6150282A (en) 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JPH11323394A (ja) 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6828289B2 (en) 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6761835B2 (en) 2000-07-07 2004-07-13 Tdk Corporation Phosphor multilayer and EL panel
US6777380B2 (en) 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US20030022800A1 (en) 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
CN102135735A (zh) * 2002-06-07 2011-07-27 安万托特性材料股份有限公司 用于微电子基底的清洁组合物
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US6677286B1 (en) 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
EP1692572A2 (en) * 2003-10-29 2006-08-23 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
US8030263B2 (en) 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
JP2006041446A (ja) * 2004-07-30 2006-02-09 Sumitomo Chemical Co Ltd 電子部品洗浄液
CN101076760B (zh) * 2004-12-10 2010-12-22 马林克罗特贝克公司 含有聚合物腐蚀抑制剂的非水的、无腐蚀性的微电子清洁组合物
JP4909908B2 (ja) 2005-02-25 2012-04-04 イーケイシー テクノロジー インコーポレーテッド 銅とｌｏｗ−ｋ誘電材料を有する基板からレジスト、エッチング残渣、及び酸化銅を除去する方法
CA2603393A1 (en) * 2005-04-04 2006-10-12 Mallinckrodt Baker, Inc. Compositions for cleaning ion implanted photoresist in front end of line applications
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法
KR20080015027A (ko) * 2005-06-13 2008-02-15 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 규화물 형성 후 금속 또는 금속 합금의 선택적인제거를 위한 조성물 및 방법
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
WO2007111694A2 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
US7582508B2 (en) 2006-05-31 2009-09-01 Byoung-Choo Park Method for manufacturing an organic semiconductor device that utilizes ionic salt
WO2008023858A1 (en) 2006-08-25 2008-02-28 Hanwha Chemical Corporation Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
TWI572746B (zh) 2006-12-21 2017-03-01 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
US8026201B2 (en) 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer

Also Published As

Publication number Publication date
US8168577B2 (en) 2012-05-01
EP2247672B1 (en) 2013-06-05
KR101570256B1 (ko) 2015-11-18
BRPI0908905A2 (pt) 2015-09-22
IL207605A0 (en) 2010-12-30
CN101959977A (zh) 2011-01-26
JP5512554B2 (ja) 2014-06-04
CA2716641A1 (en) 2009-09-03
JP2011516620A (ja) 2011-05-26
EP2247672A1 (en) 2010-11-10
WO2009108474A1 (en) 2009-09-03
ZA201005419B (en) 2011-04-28
CN101959977B (zh) 2013-12-04
IL207605A (en) 2014-02-27
US20110046036A1 (en) 2011-02-24
KR20100125270A (ko) 2010-11-30

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