CA2716641A1 - Microelectronic substrate cleaning compositions - Google Patents

Microelectronic substrate cleaning compositions Download PDF

Info

Publication number
CA2716641A1
CA2716641A1 CA2716641A CA2716641A CA2716641A1 CA 2716641 A1 CA2716641 A1 CA 2716641A1 CA 2716641 A CA2716641 A CA 2716641A CA 2716641 A CA2716641 A CA 2716641A CA 2716641 A1 CA2716641 A1 CA 2716641A1
Authority
CA
Canada
Prior art keywords
composition
weight
microelectronic substrate
sulfone
component providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2716641A
Other languages
English (en)
French (fr)
Inventor
William R. Gemmill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avantor Performance Materials LLC
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of CA2716641A1 publication Critical patent/CA2716641A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
CA2716641A 2008-02-29 2009-02-05 Microelectronic substrate cleaning compositions Abandoned CA2716641A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3244908P 2008-02-29 2008-02-29
US61/032,449 2008-02-29
PCT/US2009/033148 WO2009108474A1 (en) 2008-02-29 2009-02-05 Microelectronic substrate cleaning compositions

Publications (1)

Publication Number Publication Date
CA2716641A1 true CA2716641A1 (en) 2009-09-03

Family

ID=40419175

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2716641A Abandoned CA2716641A1 (en) 2008-02-29 2009-02-05 Microelectronic substrate cleaning compositions

Country Status (11)

Country Link
US (1) US8168577B2 (enExample)
EP (1) EP2247672B1 (enExample)
JP (1) JP5512554B2 (enExample)
KR (1) KR101570256B1 (enExample)
CN (1) CN101959977B (enExample)
BR (1) BRPI0908905A2 (enExample)
CA (1) CA2716641A1 (enExample)
IL (1) IL207605A (enExample)
TW (1) TW200942608A (enExample)
WO (1) WO2009108474A1 (enExample)
ZA (1) ZA201005419B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838483B (zh) * 2010-05-11 2012-07-04 华北电网有限公司北京超高压公司 一种溶解型防污闪涂层清除剂及其制备方法
WO2018180256A1 (ja) * 2017-03-31 2018-10-04 関東化學株式会社 洗浄液組成物
CN115386954A (zh) * 2022-09-17 2022-11-25 中国科学院新疆理化技术研究所 化合物氟硼酸锂钠和氟硼酸锂钠双折射晶体及制备方法和用途

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401747A (en) 1982-09-02 1983-08-30 J. T. Baker Chemical Company Stripping compositions and methods of stripping resists
US4491530A (en) 1983-05-20 1985-01-01 Allied Corporation Brown stain suppressing phenol free and chlorinated hydrocarbons free photoresist stripper
US5480585A (en) 1992-04-02 1996-01-02 Nagase Electronic Chemicals, Ltd. Stripping liquid compositions
US5568461A (en) * 1994-04-20 1996-10-22 Matsushita Electric Industrial Co., Ltd. Optical information recording and reproducing apparatus
JPH07311469A (ja) * 1994-05-17 1995-11-28 Hitachi Chem Co Ltd ポリイミド系樹脂膜のレジスト剥離残り除去液およびポリイミド系樹脂膜パターンの製造法
US5571447A (en) 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6043206A (en) 1996-10-19 2000-03-28 Samsung Electronics Co., Ltd. Solutions for cleaning integrated circuit substrates
KR100248113B1 (ko) * 1997-01-21 2000-03-15 이기원 전자 표시 장치 및 기판용 세정 및 식각 조성물
US6150282A (en) 1997-11-13 2000-11-21 International Business Machines Corporation Selective removal of etching residues
US6432209B2 (en) 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JPH11323394A (ja) 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
KR100288769B1 (ko) 1998-07-10 2001-09-17 윤종용 포토레지스트용스트리퍼조성물
US6828289B2 (en) 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6761835B2 (en) 2000-07-07 2004-07-13 Tdk Corporation Phosphor multilayer and EL panel
US6777380B2 (en) 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US20030022800A1 (en) 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
EP1512050A2 (en) * 2002-06-07 2005-03-09 Mallinckrodt Baker, Inc. Cleaning compositions for microelectronic substrates
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US6677286B1 (en) 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
CA2544198C (en) * 2003-10-29 2011-07-26 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
US8030263B2 (en) 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
JP2006041446A (ja) * 2004-07-30 2006-02-09 Sumitomo Chemical Co Ltd 電子部品洗浄液
PT1828848E (pt) * 2004-12-10 2010-05-21 Mallinckrodt Baker Inc Composições de limpeza para microelectrónica, não aquosas e não corrosivas, contendo inibidores da corrosão poliméricos
EP1853973A1 (en) 2005-02-25 2007-11-14 Ekc Technology, Inc. Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
KR20070117624A (ko) * 2005-04-04 2007-12-12 말린크로트 베이커, 인코포레이티드 기판 공정 적용시의 이온 주입 포토레지스트 세척용 조성물
JP2006310603A (ja) * 2005-04-28 2006-11-09 Nissan Chem Ind Ltd ホウ素化合物を含む半導体用洗浄液組成物及び洗浄方法
EP1894230A2 (en) * 2005-06-13 2008-03-05 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
KR100655647B1 (ko) * 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
AU2006340825A1 (en) * 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
US7582508B2 (en) 2006-05-31 2009-09-01 Byoung-Choo Park Method for manufacturing an organic semiconductor device that utilizes ionic salt
WO2008023858A1 (en) 2006-08-25 2008-02-28 Hanwha Chemical Corporation Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
EP2108039A2 (en) 2006-12-21 2009-10-14 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
US8026201B2 (en) * 2007-01-03 2011-09-27 Az Electronic Materials Usa Corp. Stripper for coating layer

Also Published As

Publication number Publication date
KR20100125270A (ko) 2010-11-30
US20110046036A1 (en) 2011-02-24
IL207605A0 (en) 2010-12-30
WO2009108474A1 (en) 2009-09-03
TW200942608A (en) 2009-10-16
EP2247672A1 (en) 2010-11-10
US8168577B2 (en) 2012-05-01
CN101959977A (zh) 2011-01-26
KR101570256B1 (ko) 2015-11-18
JP5512554B2 (ja) 2014-06-04
JP2011516620A (ja) 2011-05-26
BRPI0908905A2 (pt) 2015-09-22
CN101959977B (zh) 2013-12-04
EP2247672B1 (en) 2013-06-05
IL207605A (en) 2014-02-27
ZA201005419B (en) 2011-04-28

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Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20140205