JP2011514669A5 - - Google Patents
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- Publication number
- JP2011514669A5 JP2011514669A5 JP2010546412A JP2010546412A JP2011514669A5 JP 2011514669 A5 JP2011514669 A5 JP 2011514669A5 JP 2010546412 A JP2010546412 A JP 2010546412A JP 2010546412 A JP2010546412 A JP 2010546412A JP 2011514669 A5 JP2011514669 A5 JP 2011514669A5
- Authority
- JP
- Japan
- Prior art keywords
- gas stream
- substrates
- gas flow
- gas
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08290150A EP2091071B1 (en) | 2008-02-15 | 2008-02-15 | Process for bonding two substrates |
| PCT/IB2009/000142 WO2009101495A1 (en) | 2008-02-15 | 2009-01-23 | Processing for bonding two substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011514669A JP2011514669A (ja) | 2011-05-06 |
| JP2011514669A5 true JP2011514669A5 (enExample) | 2011-12-22 |
Family
ID=39577753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010546412A Pending JP2011514669A (ja) | 2008-02-15 | 2009-01-23 | ２つの基板を結合するための加工 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20110000612A1 (enExample) |
| EP (1) | EP2091071B1 (enExample) |
| JP (1) | JP2011514669A (enExample) |
| KR (1) | KR20100119780A (enExample) |
| CN (1) | CN101925978A (enExample) |
| WO (1) | WO2009101495A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2963157B1 (fr) * | 2010-07-22 | 2013-04-26 | Soitec Silicon On Insulator | Procede et appareil de collage par adhesion moleculaire de deux plaques |
| FR2963982B1 (fr) * | 2010-08-20 | 2012-09-28 | Soitec Silicon On Insulator | Procede de collage a basse temperature |
| JP2013008921A (ja) * | 2011-06-27 | 2013-01-10 | Toshiba Corp | 半導体製造装置及び製造方法 |
| JP2014188536A (ja) * | 2013-03-26 | 2014-10-06 | National Institute For Materials Science | 金属材の拡散接合方法および金属材の拡散接合装置 |
| US9922851B2 (en) * | 2014-05-05 | 2018-03-20 | International Business Machines Corporation | Gas-controlled bonding platform for edge defect reduction during wafer bonding |
| CN105197880B (zh) * | 2014-06-24 | 2018-03-20 | 中芯国际集成电路制造(上海)有限公司 | 一种带空腔晶片的键合方法 |
| FR3029352B1 (fr) | 2014-11-27 | 2017-01-06 | Soitec Silicon On Insulator | Procede d'assemblage de deux substrats |
| KR20170137050A (ko) | 2015-04-10 | 2017-12-12 | 에베 그룹 에. 탈너 게엠베하 | 2개의 기판을 결합하기 위한 기판 홀더 및 방법. |
| US11056356B1 (en) * | 2017-09-01 | 2021-07-06 | Intel Corporation | Fluid viscosity control during wafer bonding |
| CN109887860B (zh) * | 2018-12-28 | 2020-12-25 | 上海集成电路研发中心有限公司 | 一种键合腔体结构及键合方法 |
| KR102808554B1 (ko) | 2019-11-07 | 2025-05-16 | 삼성전자주식회사 | 기판 본딩 장치 |
| WO2021177466A1 (ja) * | 2020-03-06 | 2021-09-10 | 株式会社ニコン | 制御装置、制御方法およびプログラム |
| JP7014850B2 (ja) * | 2020-04-28 | 2022-02-01 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | ２つの基板をボンディングするための基板ホルダおよび方法 |
| CN113707564B (zh) * | 2021-08-31 | 2024-06-21 | 浙江同芯祺科技有限公司 | 一种超薄半导体基板加工工艺 |
| US12001193B2 (en) * | 2022-03-11 | 2024-06-04 | Applied Materials, Inc. | Apparatus for environmental control of dies and substrates for hybrid bonding |
| CN118560040B (zh) * | 2024-07-31 | 2024-12-03 | 浙江方氏眼镜制造有限公司 | 一种塑料眼镜架板材贴合加工设备及贴合加工方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4133820A1 (de) * | 1991-10-12 | 1993-04-15 | Bosch Gmbh Robert | Verfahren zur herstellung von halbleiterelementen |
| JP3321882B2 (ja) * | 1993-02-28 | 2002-09-09 | ソニー株式会社 | 基板はり合わせ方法 |
| JPH0745801A (ja) * | 1993-08-03 | 1995-02-14 | Matsushita Electric Ind Co Ltd | 基板の接合方法 |
| SE507152C2 (sv) | 1996-08-22 | 1998-04-06 | Volvo Lastvagnar Ab | Anordning och förfarande för reglering av luftkompressor |
| DE19737051B4 (de) | 1997-08-26 | 2007-02-15 | Knorr-Bremse Systeme für Nutzfahrzeuge GmbH | Verfahren und Vorrichtung zur Steuerung wenigstens einer Komponente einer pneumatischen Bremsanlage eines Fahrzeugs |
| DE10048374B4 (de) * | 1999-10-01 | 2009-06-10 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zum großflächigen Verbinden von Verbindungshalbleitermaterialien |
| JP4316157B2 (ja) * | 2001-05-10 | 2009-08-19 | 株式会社東芝 | 化合物半導体素子の製造方法及びウェハ接着装置 |
| US6372561B1 (en) * | 2001-06-01 | 2002-04-16 | Advanced Micro Devices, Inc. | Fabrication of fully depleted field effect transistor formed in SOI technology with a single implantation step |
| KR100442310B1 (ko) | 2001-11-28 | 2004-07-30 | 최우범 | 플라즈마 전처리를 구비한 기판접합장치 및 그 제어방법 |
| DE10240600A1 (de) * | 2002-09-03 | 2004-03-18 | Knorr-Bremse Systeme für Nutzfahrzeuge GmbH | Verfahren zur Erzeugung von Druckluft und Kompressoranordnung zur Durchführung des Verfahrens |
| JP2006134900A (ja) * | 2002-11-28 | 2006-05-25 | Toray Eng Co Ltd | 接合方法および装置 |
| DE10344113A1 (de) * | 2003-09-24 | 2005-05-04 | Erich Thallner | Vorrichtung und Verfahren zum Verbinden von Wafern |
| WO2005055293A1 (ja) * | 2003-12-02 | 2005-06-16 | Bondtech Inc. | 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置 |
| US7645681B2 (en) * | 2003-12-02 | 2010-01-12 | Bondtech, Inc. | Bonding method, device produced by this method, and bonding device |
| US7601271B2 (en) | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
| DE102006000687B4 (de) * | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
| US7554103B2 (en) * | 2006-06-26 | 2009-06-30 | Applied Materials, Inc. | Increased tool utilization/reduction in MWBC for UV curing chamber |
-
2008
- 2008-02-15 EP EP08290150A patent/EP2091071B1/en active Active
-
2009
- 2009-01-23 WO PCT/IB2009/000142 patent/WO2009101495A1/en not_active Ceased
- 2009-01-23 US US12/811,209 patent/US20110000612A1/en not_active Abandoned
- 2009-01-23 JP JP2010546412A patent/JP2011514669A/ja active Pending
- 2009-01-23 CN CN2009801028815A patent/CN101925978A/zh active Pending
- 2009-01-23 KR KR1020107019406A patent/KR20100119780A/ko not_active Ceased
-
2013
- 2013-01-24 US US13/749,471 patent/US8999090B2/en active Active
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