FR2963157B1 - Procede et appareil de collage par adhesion moleculaire de deux plaques - Google Patents

Procede et appareil de collage par adhesion moleculaire de deux plaques

Info

Publication number
FR2963157B1
FR2963157B1 FR1056010A FR1056010A FR2963157B1 FR 2963157 B1 FR2963157 B1 FR 2963157B1 FR 1056010 A FR1056010 A FR 1056010A FR 1056010 A FR1056010 A FR 1056010A FR 2963157 B1 FR2963157 B1 FR 2963157B1
Authority
FR
France
Prior art keywords
bonding
plates
molecular adhesion
adhesion
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1056010A
Other languages
English (en)
Other versions
FR2963157A1 (fr
Inventor
Arnaud Castex
Marcel Broekaart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1056010A priority Critical patent/FR2963157B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to DE112011102435.5T priority patent/DE112011102435B4/de
Priority to JP2013520080A priority patent/JP5966215B2/ja
Priority to US13/808,473 priority patent/US9004135B2/en
Priority to PCT/EP2011/062153 priority patent/WO2012010517A1/fr
Priority to CN2011800351394A priority patent/CN103003933A/zh
Priority to SG2012091476A priority patent/SG186711A1/en
Priority to KR1020137000338A priority patent/KR101792683B1/ko
Publication of FR2963157A1 publication Critical patent/FR2963157A1/fr
Application granted granted Critical
Publication of FR2963157B1 publication Critical patent/FR2963157B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/0076—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised in that the layers are not bonded on the totality of their surfaces
    • B32B37/0084—Point bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Pressure Sensors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
FR1056010A 2010-07-22 2010-07-22 Procede et appareil de collage par adhesion moleculaire de deux plaques Active FR2963157B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1056010A FR2963157B1 (fr) 2010-07-22 2010-07-22 Procede et appareil de collage par adhesion moleculaire de deux plaques
JP2013520080A JP5966215B2 (ja) 2010-07-22 2011-07-15 分子接着によって２枚のウェーハを互いにボンディングするための方法及び装置
US13/808,473 US9004135B2 (en) 2010-07-22 2011-07-15 Method and apparatus for bonding together two wafers by molecular adhesion
PCT/EP2011/062153 WO2012010517A1 (fr) 2010-07-22 2011-07-15 Procédé et appareil permettant de coller ensemble deux tranches par adhérence moléculaire
DE112011102435.5T DE112011102435B4 (de) 2010-07-22 2011-07-15 Verfahren und Vorrichtung zum Zusammenbonden von zwei Wafern durch Molekularadhäsion
CN2011800351394A CN103003933A (zh) 2010-07-22 2011-07-15 用于通过分子间附着将两个晶片键合在一起的方法和装置
SG2012091476A SG186711A1 (en) 2010-07-22 2011-07-15 A method and apparatus for bonding together two wafers by molecular adhesion
KR1020137000338A KR101792683B1 (ko) 2010-07-22 2011-07-15 분자 접착에 의해 2개의 웨이퍼들을 함께 접합하기 위한 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1056010A FR2963157B1 (fr) 2010-07-22 2010-07-22 Procede et appareil de collage par adhesion moleculaire de deux plaques

Publications (2)

Publication Number Publication Date
FR2963157A1 FR2963157A1 (fr) 2012-01-27
FR2963157B1 true FR2963157B1 (fr) 2013-04-26

Family

ID=43608650

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1056010A Active FR2963157B1 (fr) 2010-07-22 2010-07-22 Procede et appareil de collage par adhesion moleculaire de deux plaques

Country Status (8)

Country Link
US (1) US9004135B2 (fr)
JP (1) JP5966215B2 (fr)
KR (1) KR101792683B1 (fr)
CN (1) CN103003933A (fr)
DE (1) DE112011102435B4 (fr)
FR (1) FR2963157B1 (fr)
SG (1) SG186711A1 (fr)
WO (1) WO2012010517A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008921A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 半導体製造装置及び製造方法
FR2990054B1 (fr) 2012-04-27 2014-05-02 Commissariat Energie Atomique Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif.
FR2997224B1 (fr) * 2012-10-18 2015-12-04 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire
CN104364882B (zh) 2013-05-29 2018-11-16 Ev 集团 E·索尔纳有限责任公司 用以接合衬底的装置及方法
EP3690926B1 (fr) 2016-09-29 2022-08-17 EV Group E. Thallner GmbH Appareil et méthode pour la liaison de deux substrats
DE102016122486A1 (de) * 2016-11-22 2018-05-24 Snaptrack, Inc. Vorrichtung und Verfahren zur Verbindung zweier Substrate für ein elektrisches Bauelement
US10497667B2 (en) * 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
JP6552570B2 (ja) * 2017-09-26 2019-07-31 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板をボンディングする装置および方法
CN108054087B (zh) * 2017-12-07 2020-05-29 德淮半导体有限公司 晶圆键合中的退火装置及退火方法
KR102089670B1 (ko) 2018-03-27 2020-04-23 주식회사 금용 멀티형 영농 살포기
KR102141171B1 (ko) 2018-10-19 2020-08-04 주식회사 금용 탑재형 광범위 약제살포기용 분사기
KR102244899B1 (ko) * 2018-11-21 2021-04-27 한국전자기술연구원 소자실장방법
CN109887860B (zh) * 2018-12-28 2020-12-25 上海集成电路研发中心有限公司 一种键合腔体结构及键合方法
FR3094563A1 (fr) * 2019-03-29 2020-10-02 Soitec Procede de fabrication d’un substrat de type semi-conducteur sur isolant
KR20210055451A (ko) 2019-11-07 2021-05-17 삼성전자주식회사 기판 본딩 장치
CN115244650A (zh) * 2020-03-06 2022-10-25 株式会社尼康 控制装置、控制方法以及程序

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3321882B2 (ja) * 1993-02-28 2002-09-09 ソニー株式会社 基板はり合わせ方法
JPH0794675A (ja) * 1993-09-24 1995-04-07 Hitachi Ltd 半導体製造装置
FR2752332B1 (fr) * 1996-08-12 1998-09-11 Commissariat Energie Atomique Dispositif de decollement de plaquettes et procede de mise en oeuvre de ce dispositif
DE10048374B4 (de) * 1999-10-01 2009-06-10 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zum großflächigen Verbinden von Verbindungshalbleitermaterialien
JP2006134900A (ja) 2002-11-28 2006-05-25 Toray Eng Co Ltd 接合方法および装置
DE10344113A1 (de) * 2003-09-24 2005-05-04 Erich Thallner Vorrichtung und Verfahren zum Verbinden von Wafern
US20070110917A1 (en) 2003-12-02 2007-05-17 Bondtech, Inc Bonding method, device formed by such method, surface activating unit and bonding apparatus comprising such unit
EP2091071B1 (fr) * 2008-02-15 2012-12-12 Soitec Procédé pour la liaison de deux substrats

Also Published As

Publication number Publication date
KR101792683B1 (ko) 2017-11-20
JP5966215B2 (ja) 2016-08-10
CN103003933A (zh) 2013-03-27
JP2013531395A (ja) 2013-08-01
US20130105061A1 (en) 2013-05-02
FR2963157A1 (fr) 2012-01-27
US9004135B2 (en) 2015-04-14
SG186711A1 (en) 2013-02-28
WO2012010517A1 (fr) 2012-01-26
DE112011102435B4 (de) 2020-11-26
DE112011102435T5 (de) 2013-06-13
KR20130098271A (ko) 2013-09-04

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