FR2997224B1 - Procede de collage par adhesion moleculaire - Google Patents

Procede de collage par adhesion moleculaire

Info

Publication number
FR2997224B1
FR2997224B1 FR1259954A FR1259954A FR2997224B1 FR 2997224 B1 FR2997224 B1 FR 2997224B1 FR 1259954 A FR1259954 A FR 1259954A FR 1259954 A FR1259954 A FR 1259954A FR 2997224 B1 FR2997224 B1 FR 2997224B1
Authority
FR
France
Prior art keywords
bonding
molecular adhesion
adhesion
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1259954A
Other languages
English (en)
Other versions
FR2997224A1 (fr
Inventor
Marcel Broekaart
Arnaud Castex
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1259954A priority Critical patent/FR2997224B1/fr
Priority to PCT/IB2013/002280 priority patent/WO2014060817A1/fr
Priority to CN201380054314.3A priority patent/CN104737273B/zh
Priority to KR1020157010037A priority patent/KR102155074B1/ko
Priority to US14/434,624 priority patent/US9548202B2/en
Publication of FR2997224A1 publication Critical patent/FR2997224A1/fr
Application granted granted Critical
Publication of FR2997224B1 publication Critical patent/FR2997224B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/0007—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding involving treatment or provisions in order to avoid deformation or air inclusion, e.g. to improve surface quality
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B32B37/1009—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using vacuum and fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B2037/0092—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding in which absence of adhesives is explicitly presented as an advantage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Quality & Reliability (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
FR1259954A 2012-10-18 2012-10-18 Procede de collage par adhesion moleculaire Active FR2997224B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1259954A FR2997224B1 (fr) 2012-10-18 2012-10-18 Procede de collage par adhesion moleculaire
PCT/IB2013/002280 WO2014060817A1 (fr) 2012-10-18 2013-10-11 Procédé de collage par adhésion moléculaire
CN201380054314.3A CN104737273B (zh) 2012-10-18 2013-10-11 通过分子粘附来键合的方法
KR1020157010037A KR102155074B1 (ko) 2012-10-18 2013-10-11 분자 접착에 의한 접합 방법
US14/434,624 US9548202B2 (en) 2012-10-18 2013-10-11 Method for bonding by means of molecular adhesion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1259954A FR2997224B1 (fr) 2012-10-18 2012-10-18 Procede de collage par adhesion moleculaire

Publications (2)

Publication Number Publication Date
FR2997224A1 FR2997224A1 (fr) 2014-04-25
FR2997224B1 true FR2997224B1 (fr) 2015-12-04

Family

ID=47666255

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1259954A Active FR2997224B1 (fr) 2012-10-18 2012-10-18 Procede de collage par adhesion moleculaire

Country Status (5)

Country Link
US (1) US9548202B2 (fr)
KR (1) KR102155074B1 (fr)
CN (1) CN104737273B (fr)
FR (1) FR2997224B1 (fr)
WO (1) WO2014060817A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015103323A1 (de) 2015-03-06 2016-09-08 Infineon Technologies Austria Ag Verfahren zum Herstellen von Halbleitervorrichtungen durch Bonden einer Halbleiterscheibe auf ein Basissubstrat, zusammengesetzter Wafer und Halbleitervorrichtung
US10373830B2 (en) * 2016-03-08 2019-08-06 Ostendo Technologies, Inc. Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing
CN106816405B (zh) * 2017-01-20 2020-03-27 中国科学院微电子研究所 一种晶圆临时键合方法
US10497667B2 (en) * 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
FR3079661A1 (fr) * 2018-03-29 2019-10-04 Soitec Procede de fabrication d'un substrat pour filtre radiofrequence
CN109887860B (zh) * 2018-12-28 2020-12-25 上海集成电路研发中心有限公司 一种键合腔体结构及键合方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01272766A (ja) * 1988-04-25 1989-10-31 Kobe Steel Ltd マグネトロンスパッタ操業方法
WO1999010927A1 (fr) * 1997-08-29 1999-03-04 Farrens Sharon N Procede de soudage de tranches in situ par plasma
US6645831B1 (en) * 2002-05-07 2003-11-11 Intel Corporation Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide
DE10344113A1 (de) * 2003-09-24 2005-05-04 Erich Thallner Vorrichtung und Verfahren zum Verbinden von Wafern
FR2915624A1 (fr) * 2007-04-26 2008-10-31 Soitec Silicon On Insulator Procedes de collage et de fabrication d'un substrat du type a couche enterree tres fine.
JP4801752B2 (ja) 2009-02-27 2011-10-26 三菱重工業株式会社 ウェハ接合装置およびウェハ接合方法
FR2963157B1 (fr) * 2010-07-22 2013-04-26 Soitec Silicon On Insulator Procede et appareil de collage par adhesion moleculaire de deux plaques
FR2963848B1 (fr) * 2010-08-11 2012-08-31 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire a basse pression

Also Published As

Publication number Publication date
US9548202B2 (en) 2017-01-17
FR2997224A1 (fr) 2014-04-25
US20150235851A1 (en) 2015-08-20
CN104737273B (zh) 2017-06-06
KR102155074B1 (ko) 2020-09-11
KR20150070178A (ko) 2015-06-24
CN104737273A (zh) 2015-06-24
WO2014060817A1 (fr) 2014-04-24

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