JP2011508426A5 - - Google Patents

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JP2011508426A5
JP2011508426A5 JP2010539542A JP2010539542A JP2011508426A5 JP 2011508426 A5 JP2011508426 A5 JP 2011508426A5 JP 2010539542 A JP2010539542 A JP 2010539542A JP 2010539542 A JP2010539542 A JP 2010539542A JP 2011508426 A5 JP2011508426 A5 JP 2011508426A5
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precursor
etchant
substrate
reaction space
inlets
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JP2010539542A
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JP5162674B2 (ja
JP2011508426A (ja
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Priority claimed from US11/963,627 external-priority patent/US7655543B2/en
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JP2010539542A 2007-12-21 2008-10-22 膜の選択形成における反応種の別々の注入 Active JP5162674B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/963,627 2007-12-21
US11/963,627 US7655543B2 (en) 2007-12-21 2007-12-21 Separate injection of reactive species in selective formation of films
PCT/US2008/080803 WO2009085376A2 (en) 2007-12-21 2008-10-22 Separate injection of reactive species in selective formation of films

Publications (3)

Publication Number Publication Date
JP2011508426A JP2011508426A (ja) 2011-03-10
JP2011508426A5 true JP2011508426A5 (enExample) 2011-12-08
JP5162674B2 JP5162674B2 (ja) 2013-03-13

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JP2010539542A Active JP5162674B2 (ja) 2007-12-21 2008-10-22 膜の選択形成における反応種の別々の注入

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US (2) US7655543B2 (enExample)
EP (1) EP2231896B1 (enExample)
JP (1) JP5162674B2 (enExample)
KR (1) KR101413189B1 (enExample)
TW (1) TWI445117B (enExample)
WO (1) WO2009085376A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8088223B2 (en) * 2005-03-10 2012-01-03 Asm America, Inc. System for control of gas injectors
US8067061B2 (en) * 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US8363586B2 (en) * 2008-12-31 2013-01-29 Intel Corporation Social networking and advertisements in a mobile device on a local personal area network
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
EP2553144B1 (en) * 2010-03-29 2016-11-23 Koolerheadz Gas injection device with uniform gas velocity
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US10047438B2 (en) * 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
CN111700579A (zh) 2014-09-17 2020-09-25 理查德·M.·列维坦 用于气管套管插管的导引器
GB2547017B (en) 2016-02-04 2021-08-04 Intersurgical Ag Improvements to intubation aids
JP6938761B2 (ja) 2017-07-31 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ バッフルを有するガス供給部材

Family Cites Families (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
JPS61291410A (ja) 1985-06-17 1986-12-22 Mitsubishi Chem Ind Ltd ケイ素の製造方法
US5769950A (en) 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US4747367A (en) 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
EP0254651B1 (en) 1986-06-28 1991-09-04 Nihon Shinku Gijutsu Kabushiki Kaisha Method and apparatus for chemical vapor deposition
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5112439A (en) 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
US5194398A (en) 1989-06-28 1993-03-16 Mitsui Toatsu Chemicals, Inc. Semiconductor film and process for its production
US5071670A (en) 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
JP3149464B2 (ja) * 1991-06-28 2001-03-26 日本電気株式会社 シリコンエピタキシャル膜の選択成長方法及びその装置
JPH05102509A (ja) * 1991-10-11 1993-04-23 Canon Inc 太陽電池及びその製造方法
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US6004683A (en) 1992-11-04 1999-12-21 C. A. Patents, L.L.C. Plural layered metal repair tape
JPH06338456A (ja) * 1993-05-31 1994-12-06 Sony Corp 気相成長装置
EP0967633A1 (en) * 1993-07-30 1999-12-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US6200389B1 (en) * 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
JPH08213343A (ja) 1995-01-31 1996-08-20 Sony Corp 半導体装置およびその製造方法
US5654589A (en) 1995-06-06 1997-08-05 Advanced Micro Devices, Incorporated Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6013155A (en) 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
KR100236069B1 (ko) 1996-12-26 1999-12-15 김영환 캐패시터 및 그 제조방법
JP3050152B2 (ja) 1997-01-23 2000-06-12 日本電気株式会社 半導体装置の製造方法
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6351039B1 (en) 1997-05-28 2002-02-26 Texas Instruments Incorporated Integrated circuit dielectric and method
US6069068A (en) 1997-05-30 2000-05-30 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6100184A (en) 1997-08-20 2000-08-08 Sematech, Inc. Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer
KR100274603B1 (ko) 1997-10-01 2001-01-15 윤종용 반도체장치의제조방법및그의제조장치
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
US6042654A (en) 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US5933761A (en) 1998-02-09 1999-08-03 Lee; Ellis Dual damascene structure and its manufacturing method
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6181012B1 (en) 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6048790A (en) 1998-07-10 2000-04-11 Advanced Micro Devices, Inc. Metalorganic decomposition deposition of thin conductive films on integrated circuits using reducing ambient
KR100275738B1 (ko) 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
US6144050A (en) 1998-08-20 2000-11-07 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with strontium barrier film and process for making same
US6188134B1 (en) 1998-08-20 2001-02-13 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with rubidium barrier film and process for making same
US6077775A (en) 1998-08-20 2000-06-20 The United States Of America As Represented By The Secretary Of The Navy Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
KR100287180B1 (ko) 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
TW382787B (en) 1998-10-02 2000-02-21 United Microelectronics Corp Method of fabricating dual damascene
KR100327328B1 (ko) 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
JP2000150647A (ja) 1998-11-11 2000-05-30 Sony Corp 配線構造およびその製造方法
JP2000212749A (ja) 1999-01-22 2000-08-02 Ulvac Japan Ltd 薄膜形成装置、及び窒化タングステン薄膜製造方法
DE69913092T2 (de) * 1999-01-27 2004-09-09 Commissariat à l'Energie Atomique Microassay zur Serienanalyse der Genexpression und Anwendungen davon
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6207567B1 (en) 1999-04-12 2001-03-27 United Microelectronics Corp. Fabricating method of glue layer and barrier layer
US6037258A (en) 1999-05-07 2000-03-14 Taiwan Semiconductor Manufacturing Company Method of forming a smooth copper seed layer for a copper damascene structure
FI118342B (fi) 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6146517A (en) 1999-05-19 2000-11-14 Infineon Technologies North America Corp. Integrated circuits with copper metallization for interconnections
KR20010001543A (ko) 1999-06-05 2001-01-05 김기범 구리 배선 구조를 가지는 반도체 소자 제조 방법
EP1125321B1 (en) 1999-06-19 2007-08-15 ASM Genitech Korea Ltd. Chemical deposition reactor and method of forming a thin film using the same
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6727169B1 (en) 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR20010047128A (ko) 1999-11-18 2001-06-15 이경수 액체원료 기화방법 및 그에 사용되는 장치
EP1247292B1 (en) 1999-12-15 2009-02-04 Genitech Co., Ltd. Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst
US6184128B1 (en) 2000-01-31 2001-02-06 Advanced Micro Devices, Inc. Method using a thin resist mask for dual damascene stop layer etch
TW408653U (en) 2000-02-03 2000-10-11 Hu Hou Fei Ratcheting tool
WO2001078123A1 (en) 2000-04-11 2001-10-18 Genitech Co., Ltd. Method of forming metal interconnects
KR100332363B1 (ko) 2000-04-12 2002-04-12 최승철 화학기계적 연마장치의 연마패드를 위한 컨디셔너와 그컨디셔닝 방법
KR100363088B1 (ko) 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
DE10026180A1 (de) 2000-05-26 2001-12-06 Steag Rtp Systems Gmbh Vorrichtung und Verfahren zum Beschichten von Objekten
WO2001093338A1 (en) 2000-05-26 2001-12-06 Amberwave Systems Corporation Buried channel strained silicon fet using an ion implanted doped layer
US6342448B1 (en) 2000-05-31 2002-01-29 Taiwan Semiconductor Manufacturing Company Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process
EP2293322A1 (en) 2000-06-08 2011-03-09 Genitech, Inc. Method for forming a metal nitride layer
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
US6368954B1 (en) 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
US6583015B2 (en) 2000-08-07 2003-06-24 Amberwave Systems Corporation Gate technology for strained surface channel and strained buried channel MOSFET devices
KR100373853B1 (ko) * 2000-08-11 2003-02-26 삼성전자주식회사 반도체소자의 선택적 에피택시얼 성장 방법
TW511185B (en) * 2000-08-11 2002-11-21 Tokyo Electron Ltd Substrate processing apparatus and processing method
US6444495B1 (en) 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
JP4866534B2 (ja) 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US7026219B2 (en) 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US7307273B2 (en) 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7335545B2 (en) 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
KR100474971B1 (ko) * 2002-09-14 2005-03-10 주식회사 아이피에스 플로우타입 박막증착장치 및 그에 채용되는 인젝터 어셈블리
JP4086610B2 (ja) * 2002-09-27 2008-05-14 株式会社日立国際電気 基板処理装置
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US20040142558A1 (en) 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
JP4782670B2 (ja) * 2003-03-13 2011-09-28 エーエスエム アメリカ インコーポレイテッド エピタキシャルＧｅ含有膜の成長方法及びエピタキシャル半導体成膜システム
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7537662B2 (en) 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US7071127B2 (en) * 2003-05-20 2006-07-04 Promos Technologies, Inc. Methods for improving quality of semiconductor oxide composition formed from halogen-containing precursor
US7208362B2 (en) 2003-06-25 2007-04-24 Texas Instruments Incorporated Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel
TWI270986B (en) 2003-07-29 2007-01-11 Ind Tech Res Inst Strained SiC MOSFET
US8152922B2 (en) 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7132338B2 (en) 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
WO2005042160A2 (en) 2003-10-29 2005-05-12 Asm America, Inc. Reaction system for growing a thin film
JP2005243924A (ja) * 2004-02-26 2005-09-08 Hitachi Kokusai Electric Inc 基板処理装置
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
WO2005116304A2 (en) 2004-04-23 2005-12-08 Asm America, Inc. In situ doped epitaxial films
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7195985B2 (en) 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence
JP4934595B2 (ja) 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7816236B2 (en) * 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
US8088223B2 (en) 2005-03-10 2012-01-03 Asm America, Inc. System for control of gas injectors
GB0505752D0 (en) * 2005-03-21 2005-04-27 Element Six Ltd Diamond based substrate for gan devices
US7396415B2 (en) 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US8105908B2 (en) 2005-06-23 2012-01-31 Applied Materials, Inc. Methods for forming a transistor and modulating channel stress
KR100642646B1 (ko) * 2005-07-08 2006-11-10 삼성전자주식회사 고진공 화학기상증착 기술을 사용하여 에피택시얼반도체층을 선택적으로 형성하는 방법들 및 이에 사용되는배치형 고진공 화학기상증착 장비들
JP2007157866A (ja) * 2005-12-02 2007-06-21 Sony Corp 成膜方法および半導体装置の製造方法
JP2007197302A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法および製造装置
JP5280861B2 (ja) 2006-01-19 2013-09-04 エーエスエム アメリカ インコーポレイテッド 高温ａｌｄインレットマニホールド
KR20090006144A (ko) * 2006-04-07 2009-01-14 어플라이드 머티어리얼스, 인코포레이티드 에피택셜막을 형성하는 동안 이용되는 가스 매니폴드들
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US20080026149A1 (en) 2006-05-31 2008-01-31 Asm America, Inc. Methods and systems for selectively depositing si-containing films using chloropolysilanes
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films

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