JP2011503850A5 - - Google Patents

Download PDF

Info

Publication number
JP2011503850A5
JP2011503850A5 JP2010532325A JP2010532325A JP2011503850A5 JP 2011503850 A5 JP2011503850 A5 JP 2011503850A5 JP 2010532325 A JP2010532325 A JP 2010532325A JP 2010532325 A JP2010532325 A JP 2010532325A JP 2011503850 A5 JP2011503850 A5 JP 2011503850A5
Authority
JP
Japan
Prior art keywords
gate
programmable
floating gate
drain
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010532325A
Other languages
English (en)
Japanese (ja)
Other versions
JP5581215B2 (ja
JP2011503850A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/082294 external-priority patent/WO2009059329A1/en
Publication of JP2011503850A publication Critical patent/JP2011503850A/ja
Publication of JP2011503850A5 publication Critical patent/JP2011503850A5/ja
Application granted granted Critical
Publication of JP5581215B2 publication Critical patent/JP5581215B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010532325A 2007-11-01 2008-11-03 不揮発性ワンタイムプログラマブル及びマルチタイムプログラマブルメモリに組み込まれた集積回路 Expired - Fee Related JP5581215B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US98461507P 2007-11-01 2007-11-01
US60/984,615 2007-11-01
US12/264,076 2008-11-03
PCT/US2008/082294 WO2009059329A1 (en) 2007-11-01 2008-11-03 Integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
US12/264,060 2008-11-03
US12/264,029 US7782668B2 (en) 2007-11-01 2008-11-03 Integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
US12/264,029 2008-11-03
US12/264,076 US7787309B2 (en) 2007-11-01 2008-11-03 Method of operating integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
US12/264,060 US7787304B2 (en) 2007-11-01 2008-11-03 Method of making integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory

Publications (3)

Publication Number Publication Date
JP2011503850A JP2011503850A (ja) 2011-01-27
JP2011503850A5 true JP2011503850A5 (enExample) 2012-03-08
JP5581215B2 JP5581215B2 (ja) 2014-08-27

Family

ID=40587229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010532325A Expired - Fee Related JP5581215B2 (ja) 2007-11-01 2008-11-03 不揮発性ワンタイムプログラマブル及びマルチタイムプログラマブルメモリに組み込まれた集積回路

Country Status (3)

Country Link
US (5) US7782668B2 (enExample)
JP (1) JP5581215B2 (enExample)
WO (1) WO2009059329A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580622B2 (en) 2007-11-14 2013-11-12 Invensas Corporation Method of making integrated circuit embedded with non-volatile programmable memory having variable coupling
US7876615B2 (en) 2007-11-14 2011-01-25 Jonker Llc Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
US8344440B2 (en) 2008-02-25 2013-01-01 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times
US7859043B2 (en) * 2008-02-25 2010-12-28 Tower Semiconductor Ltd. Three-terminal single poly NMOS non-volatile memory cell
US7800156B2 (en) * 2008-02-25 2010-09-21 Tower Semiconductor Ltd. Asymmetric single poly NMOS non-volatile memory cell
US7898857B2 (en) * 2008-03-20 2011-03-01 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US8203861B2 (en) 2008-12-30 2012-06-19 Invensas Corporation Non-volatile one-time—programmable and multiple-time programmable memory configuration circuit
US9293577B2 (en) * 2010-03-30 2016-03-22 Volterra Semiconductor LLC LDMOS with no reverse recovery
US8988103B2 (en) * 2010-09-15 2015-03-24 David K. Y. Liu Capacitively coupled logic gate
KR20120096332A (ko) * 2011-02-22 2012-08-30 삼성전자주식회사 상변화 랜덤 억세스 메모리 소자를 포함하는 임베디드 반도체 장치 및 그 제조 방법
US8469272B2 (en) 2011-03-29 2013-06-25 Metrologic Instruments, Inc. Hybrid-type bioptical laser scanning and imaging system supporting digital-imaging based bar code symbol reading at the surface of a laser scanning window
TWI613596B (zh) * 2011-03-31 2018-02-01 Ｉｃｔ韓國有限公司 產生數位值的裝置
US9305931B2 (en) * 2011-05-10 2016-04-05 Jonker, Llc Zero cost NVM cell using high voltage devices in analog process
US8561905B2 (en) 2011-06-15 2013-10-22 Metrologic Instruments, Inc. Hybrid-type bioptical laser scanning and digital imaging system supporting automatic object motion detection at the edges of a 3D scanning volume
US8794525B2 (en) 2011-09-28 2014-08-05 Metologic Insturments, Inc. Method of and system for detecting produce weighing interferences in a POS-based checkout/scale system
US8873302B2 (en) 2011-10-28 2014-10-28 Invensas Corporation Common doped region with separate gate control for a logic compatible non-volatile memory cell
US9230814B2 (en) 2011-10-28 2016-01-05 Invensas Corporation Non-volatile memory devices having vertical drain to gate capacitive coupling
US9324438B2 (en) 2013-08-05 2016-04-26 Jonker Llc Method of operating incrementally programmable non-volatile memory
CN112382327B (zh) * 2020-11-13 2021-07-23 中天弘宇集成电路有限责任公司 B4快闪存储器的编程方法
CN113035255B (zh) * 2021-03-30 2022-01-07 长江存储科技有限责任公司 存储器及其操作方法、装置、存储介质

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US648202A (en) * 1898-02-11 1900-04-24 Robert Allison Hall Stop mechanism for frictional gearing.
US4087795A (en) 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
US4328565A (en) 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
IT1209227B (it) 1980-06-04 1989-07-16 Sgs Microelettronica Spa Cella di memoria non volatile a 'gate' flottante elettricamente alterabile.
US4532611A (en) * 1982-11-01 1985-07-30 Motorola, Inc. Redundant memory circuit
US4794434A (en) * 1987-07-06 1988-12-27 Motorola, Inc. Trench cell for a dram
US4870304A (en) * 1987-12-08 1989-09-26 Cypress Semiconductor Corporation Fast EPROM programmable logic array cell
JPH07120720B2 (ja) * 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
DE4121053C2 (de) * 1991-06-26 1995-10-19 Eurosil Electronic Gmbh Speicherzelle mit Floating-Gate-Transistor
EP0595775B1 (en) * 1992-10-29 1999-07-28 STMicroelectronics S.r.l. Method of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories
JP3522788B2 (ja) * 1992-10-29 2004-04-26 株式会社ルネサステクノロジ 半導体集積回路装置
US5410268A (en) 1993-09-08 1995-04-25 Advanced Micro Devices, Inc. Latching zero-power sense amplifier with cascode
JP3073645B2 (ja) * 1993-12-27 2000-08-07 株式会社東芝 不揮発性半導体記憶装置およびその動作方法
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM
JP2833585B2 (ja) * 1996-05-17 1998-12-09 日本電気株式会社 半導体不揮発性記憶装置
WO1998044567A1 (en) 1997-03-28 1998-10-08 Hitachi, Ltd. Nonvolatile semiconductor storage device and method for manufacturing the same and semiconductor device and method for manufacturing the same
JP3481817B2 (ja) 1997-04-07 2003-12-22 株式会社東芝 半導体記憶装置
US5914898A (en) 1997-08-05 1999-06-22 Micron Technology, Inc. Memory device and system with leakage blocking circuitry
EP0926260A3 (en) * 1997-12-12 2001-04-11 Matsushita Electric Industrial Co., Ltd. Using antibody - antigen interaction for formation of a patterened metal film
EP1242889B1 (en) * 1999-09-13 2013-10-09 Silicon Storage Technology, Inc. A single chip embedded microcontroller having multiple non-volatile erasable proms sharing a single high voltage generator
US6407963B1 (en) 1999-10-19 2002-06-18 Hitachi, Ltd. Semiconductor memory device of DDR configuration having improvement in glitch immunity
US6577531B2 (en) 2000-04-27 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and semiconductor device
US6400603B1 (en) * 2000-05-03 2002-06-04 Advanced Technology Materials, Inc. Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
JP2001358313A (ja) * 2000-06-14 2001-12-26 Hitachi Ltd 半導体装置
US6631087B2 (en) * 2000-06-23 2003-10-07 Gennum Corporation Low voltage single poly deep sub-micron flash eeprom
TW477065B (en) 2001-01-30 2002-02-21 Ememory Technology Inc Manufacturing method of flash memory cell structure with dynamic-like write-in/erasing through channel and its operating method
US6441443B1 (en) * 2001-02-13 2002-08-27 Ememory Technology Inc. Embedded type flash memory structure and method for operating the same
JP4170604B2 (ja) * 2001-04-18 2008-10-22 株式会社東芝 不揮発性半導体メモリ
US6731541B2 (en) 2001-05-09 2004-05-04 Gennum Corporation Low voltage single poly deep sub-micron flash EEPROM
US6489202B1 (en) * 2001-05-29 2002-12-03 Ememory Technology, Inc. Structure of an embedded channel write-erase flash memory cell and fabricating method thereof
JP2003197765A (ja) * 2001-12-28 2003-07-11 Texas Instr Japan Ltd 半導体装置およびその製造方法
US6678190B2 (en) 2002-01-25 2004-01-13 Ememory Technology Inc. Single poly embedded eprom
KR100442090B1 (ko) 2002-03-28 2004-07-27 삼성전자주식회사 분할된 게이트 구조를 갖는 비휘발성 메모리 셀들 및 그제조방법
JP4557950B2 (ja) * 2002-05-10 2010-10-06 株式会社東芝 不揮発性半導体記憶置
US7064978B2 (en) 2002-07-05 2006-06-20 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
WO2004015764A2 (en) * 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
US6920067B2 (en) * 2002-12-25 2005-07-19 Ememory Technology Inc. Integrated circuit embedded with single-poly non-volatile memory
US6914825B2 (en) 2003-04-03 2005-07-05 Ememory Technology Inc. Semiconductor memory device having improved data retention
US6989562B2 (en) 2003-04-04 2006-01-24 Catalyst Semiconductor, Inc. Non-volatile memory integrated circuit
US7046549B2 (en) * 2003-12-31 2006-05-16 Solid State System Co., Ltd. Nonvolatile memory structure
JP2005236139A (ja) 2004-02-20 2005-09-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置およびその駆動方法並びに不揮発性半導体記憶装置の製造方法
US7256439B2 (en) 2005-01-21 2007-08-14 International Business Machines Corporation Trench capacitor array having well contacting merged plate
US7471570B2 (en) 2005-09-19 2008-12-30 Texas Instruments Incorporated Embedded EEPROM array techniques for higher density
US7808818B2 (en) * 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7365387B2 (en) * 2006-02-23 2008-04-29 Hewlett-Packard Development Company, L.P. Gate-coupled EPROM cell for printhead
US20070210369A1 (en) * 2006-03-13 2007-09-13 Bomy Chen Single gate-non-volatile flash memory cell
EP1840901B1 (en) 2006-03-31 2010-04-28 STMicroelectronics Srl Method for programming a memory device suitable to minimize floating gate couplings and memory device
TWI325165B (en) 2006-04-20 2010-05-21 Ememory Technology Inc Method for operating a single-poly single-transistor non-volatile memory cell
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US20080035973A1 (en) 2006-08-10 2008-02-14 Hsin Chang Lin Low-noise single-gate non-volatile memory and operation method thereof
JP2008103675A (ja) 2006-09-22 2008-05-01 Toshiba Corp 半導体集積回路
US7939861B2 (en) * 2007-02-02 2011-05-10 Synopsys, Inc. Non-volatile memory devices having floating-gates FETs with different source-gate and drain-gate border lengths
US8067795B2 (en) * 2007-03-12 2011-11-29 Texas Instruments Incorporated Single poly EEPROM without separate control gate nor erase regions
US20090016118A1 (en) 2007-07-12 2009-01-15 Silicon Storage Technology, Inc. Non-volatile dram with floating gate and method of operation
US7876615B2 (en) 2007-11-14 2011-01-25 Jonker Llc Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
US7852672B2 (en) 2007-11-14 2010-12-14 Jonker Llc Integrated circuit embedded with non-volatile programmable memory having variable coupling

Similar Documents

Publication Publication Date Title
JP2011503850A5 (enExample)
TWI569418B (zh) 具輔助閘極之非揮發性記憶胞結構
US8582342B2 (en) Non-volatile one-time-programmable and multiple-time programmable memory configuration circuit
US8599612B2 (en) Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
US7551491B2 (en) Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof
US20090116295A1 (en) Method of operating integrated circuit embedded with non-volatile one-time - programmable and multiple-time programmable memory
KR20100115612A (ko) 프로그램 디스터브를 줄일 수 있는 비휘발성 반도체 메모리 장치 및 이 장치의 프로그램 방법
US20150179270A1 (en) Method and System for Reducing the Size of Nonvolatile Memories
CN101329913A (zh) 与cmos兼容的单层多晶硅非易失性存储器
US8208299B2 (en) Integrated circuit embedded with non-volatile programmable memory having variable coupling and separate read/write paths
US7852672B2 (en) Integrated circuit embedded with non-volatile programmable memory having variable coupling
JP2006527897A5 (enExample)
US7450418B2 (en) Non-volatile memory and operating method thereof
JP2007294082A5 (enExample)
US20140065772A1 (en) Method of making integrated circuit embedded with non-volatile programmable memory having variable coupling
JP2011503905A5 (enExample)
JP2007251183A (ja) 単一ゲートの不揮発性フラッシュメモリセル
JP2007142448A5 (enExample)
JP2005184029A (ja) 不揮発性記憶素子及び半導体集積回路装置
JP5554714B2 (ja) 可変結合を有する不揮発性プログラマブルメモリに組み込まれた集積回路
TW202034512A (zh) 用以和邏輯電晶體一起操作之記憶裝置及其操作方法
JP4916437B2 (ja) 半導体装置
KR100830339B1 (ko) 플래쉬 메모리 소자
JP5522296B2 (ja) 不揮発性半導体記憶装置
JP2008172251A (ja) 不揮発性記憶素子及び半導体集積回路装置