JP2006527897A5 - - Google Patents

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Publication number
JP2006527897A5
JP2006527897A5 JP2006516674A JP2006516674A JP2006527897A5 JP 2006527897 A5 JP2006527897 A5 JP 2006527897A5 JP 2006516674 A JP2006516674 A JP 2006516674A JP 2006516674 A JP2006516674 A JP 2006516674A JP 2006527897 A5 JP2006527897 A5 JP 2006527897A5
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JP
Japan
Prior art keywords
memory device
memory
volatile
node
memory means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006516674A
Other languages
English (en)
Japanese (ja)
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JP2006527897A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/IB2004/050882 external-priority patent/WO2004112047A1/en
Publication of JP2006527897A publication Critical patent/JP2006527897A/ja
Publication of JP2006527897A5 publication Critical patent/JP2006527897A5/ja
Pending legal-status Critical Current

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JP2006516674A 2003-06-17 2004-06-10 不揮発性スタティックメモリセル Pending JP2006527897A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03101770 2003-06-17
PCT/IB2004/050882 WO2004112047A1 (en) 2003-06-17 2004-06-10 Non-volatile static memory cell

Publications (2)

Publication Number Publication Date
JP2006527897A JP2006527897A (ja) 2006-12-07
JP2006527897A5 true JP2006527897A5 (enExample) 2007-07-26

Family

ID=33547730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006516674A Pending JP2006527897A (ja) 2003-06-17 2004-06-10 不揮発性スタティックメモリセル

Country Status (8)

Country Link
US (1) US7663917B2 (enExample)
EP (1) EP1639605B1 (enExample)
JP (1) JP2006527897A (enExample)
KR (1) KR101066938B1 (enExample)
CN (1) CN1809894B (enExample)
AT (1) ATE403220T1 (enExample)
DE (1) DE602004015457D1 (enExample)
WO (1) WO2004112047A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004046793B3 (de) * 2004-09-27 2006-05-11 Austriamicrosystems Ag Nicht-flüchtiges Speicherelement
WO2007017926A1 (ja) 2005-08-08 2007-02-15 Spansion Llc 半導体装置およびその制御方法
US8036032B2 (en) * 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
JP5336205B2 (ja) * 2009-01-14 2013-11-06 ローム株式会社 プログラマブルロジックデバイスを用いた信号処理回路
US8605490B2 (en) * 2009-10-12 2013-12-10 Micron Technology, Inc. Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
FR2952227B1 (fr) * 2009-10-29 2013-09-06 St Microelectronics Rousset Dispositif de memoire du type electriquement programmable et effacable, a deux cellules par bit
US8406064B2 (en) 2010-07-30 2013-03-26 Qualcomm Incorporated Latching circuit
US9779814B2 (en) * 2011-08-09 2017-10-03 Flashsilicon Incorporation Non-volatile static random access memory devices and methods of operations
JP5823833B2 (ja) 2011-11-25 2015-11-25 ルネサスエレクトロニクス株式会社 半導体記憶装置
CN103544992A (zh) * 2012-07-10 2014-01-29 珠海艾派克微电子有限公司 一种非易失性高速存储单元，其存储器及其内部数据转存的控制方法
US9177644B2 (en) 2012-08-15 2015-11-03 Aplus Flash Technology, Inc. Low-voltage fast-write PMOS NVSRAM cell
US8964470B2 (en) 2012-09-25 2015-02-24 Aplus Flash Technology, Inc. Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays
US9001583B2 (en) 2012-10-15 2015-04-07 Aplus Flash Technology, Inc. On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation
JP5556873B2 (ja) 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
US9177645B2 (en) 2012-10-19 2015-11-03 Aplus Flash Technology, Inc. 10T NVSRAM cell and cell operations
US8929136B2 (en) 2012-10-26 2015-01-06 Aplus Flash Technology, Inc. 8T NVSRAM cell and cell operations
US8971113B2 (en) 2012-10-30 2015-03-03 Aplus Flash Technology, Inc. Pseudo-8T NVSRAM cell with a charge-follower
US8976588B2 (en) 2012-11-01 2015-03-10 Aplus Flash Technology, Inc. NVSRAM cells with voltage flash charger
KR101906966B1 (ko) 2012-11-05 2018-12-07 삼성전자주식회사 논리 장치 및 이의 동작 방법
GB2508221B (en) * 2012-11-26 2015-02-25 Surecore Ltd Low-Power SRAM Cells
FR3007185B1 (fr) * 2013-06-12 2015-06-19 St Microelectronics Rousset Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement
US10373694B2 (en) * 2017-08-31 2019-08-06 Micron Technology, Inc. Responding to power loss
US10192626B1 (en) 2017-08-31 2019-01-29 Micro Technology, Inc. Responding to power loss

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
FR2517142A1 (fr) 1981-11-20 1983-05-27 Efcis Bascule bistable a stockage non volatil et a repositionnement statique
US4527255A (en) 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
JPS60151898A (ja) 1984-01-18 1985-08-09 Nec Corp 不揮発性ランダムアクセスメモリセル
JPS6233393A (ja) 1985-08-06 1987-02-13 Nissan Motor Co Ltd 半導体不揮発性メモリ装置
JPH0397197A (ja) 1989-09-08 1991-04-23 Kawasaki Steel Corp メモリセル
US5440508A (en) 1994-02-09 1995-08-08 Atmel Corporation Zero power high speed programmable circuit device architecture
JPH07226088A (ja) * 1994-02-15 1995-08-22 Nippon Steel Corp 半導体記憶装置
JP3450896B2 (ja) 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US5548228A (en) 1994-09-28 1996-08-20 Altera Corporation Reconfigurable programmable logic device having static and non-volatile memory
US5602776A (en) 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
US6122191A (en) * 1996-05-01 2000-09-19 Cypress Semiconductor Corporation Semiconductor non-volatile device including embedded non-volatile elements
US5805496A (en) * 1996-12-27 1998-09-08 International Business Machines Corporation Four device SRAM cell with single bitline
US5914895A (en) 1997-09-10 1999-06-22 Cypress Semiconductor Corp. Non-volatile random access memory and methods for making and configuring same
US6285586B1 (en) * 2000-10-16 2001-09-04 Macronix International Co., Ltd. Nonvolatile static random access memory
US6304482B1 (en) * 2000-11-21 2001-10-16 Silicon Integrated Systems Corp. Apparatus of reducing power consumption of single-ended SRAM
JP2002237191A (ja) * 2001-02-13 2002-08-23 Seiko Instruments Inc 相補型不揮発性記憶回路
US6414873B1 (en) * 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
US7164608B2 (en) * 2004-07-28 2007-01-16 Aplus Flash Technology, Inc. NVRAM memory cell architecture that integrates conventional SRAM and flash cells

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