KR101066938B1 - 메모리 장치, 재구성 가능한 프로그래밍가능 논리 장치 및 ｆｐｇａ - Google Patents

메모리 장치, 재구성 가능한 프로그래밍가능 논리 장치 및 ｆｐｇａ Download PDF

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KR101066938B1
KR101066938B1 KR1020057024108A KR20057024108A KR101066938B1 KR 101066938 B1 KR101066938 B1 KR 101066938B1 KR 1020057024108 A KR1020057024108 A KR 1020057024108A KR 20057024108 A KR20057024108 A KR 20057024108A KR 101066938 B1 KR101066938 B1 KR 101066938B1
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memory
nonvolatile
memory device
node
devices
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KR20060025176A (ko
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로거 쿠펜스
안토니 엠 에이치 디테베그
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엔엑스피 비 브이
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Semiconductor Memories (AREA)
KR1020057024108A 2003-06-17 2004-06-10 메모리 장치, 재구성 가능한 프로그래밍가능 논리 장치 및 ｆｐｇａ Expired - Fee Related KR101066938B1 (ko)

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EP03101770.0 2003-06-17
EP03101770 2003-06-17

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KR20060025176A KR20060025176A (ko) 2006-03-20
KR101066938B1 true KR101066938B1 (ko) 2011-09-23

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US (1) US7663917B2 (enExample)
EP (1) EP1639605B1 (enExample)
JP (1) JP2006527897A (enExample)
KR (1) KR101066938B1 (enExample)
CN (1) CN1809894B (enExample)
AT (1) ATE403220T1 (enExample)
DE (1) DE602004015457D1 (enExample)
WO (1) WO2004112047A1 (enExample)

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DE102004046793B3 (de) * 2004-09-27 2006-05-11 Austriamicrosystems Ag Nicht-flüchtiges Speicherelement
JP4792034B2 (ja) 2005-08-08 2011-10-12 スパンション エルエルシー 半導体装置およびその制御方法
US8036032B2 (en) * 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
JP5336205B2 (ja) * 2009-01-14 2013-11-06 ローム株式会社 プログラマブルロジックデバイスを用いた信号処理回路
US8605490B2 (en) * 2009-10-12 2013-12-10 Micron Technology, Inc. Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
FR2952227B1 (fr) * 2009-10-29 2013-09-06 St Microelectronics Rousset Dispositif de memoire du type electriquement programmable et effacable, a deux cellules par bit
US8406064B2 (en) 2010-07-30 2013-03-26 Qualcomm Incorporated Latching circuit
US9779814B2 (en) * 2011-08-09 2017-10-03 Flashsilicon Incorporation Non-volatile static random access memory devices and methods of operations
JP5823833B2 (ja) 2011-11-25 2015-11-25 ルネサスエレクトロニクス株式会社 半導体記憶装置
CN103544992A (zh) * 2012-07-10 2014-01-29 珠海艾派克微电子有限公司 一种非易失性高速存储单元，其存储器及其内部数据转存的控制方法
US9177644B2 (en) 2012-08-15 2015-11-03 Aplus Flash Technology, Inc. Low-voltage fast-write PMOS NVSRAM cell
US8964470B2 (en) 2012-09-25 2015-02-24 Aplus Flash Technology, Inc. Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays
US9001583B2 (en) 2012-10-15 2015-04-07 Aplus Flash Technology, Inc. On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation
US9177645B2 (en) 2012-10-19 2015-11-03 Aplus Flash Technology, Inc. 10T NVSRAM cell and cell operations
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
US8929136B2 (en) 2012-10-26 2015-01-06 Aplus Flash Technology, Inc. 8T NVSRAM cell and cell operations
US8971113B2 (en) 2012-10-30 2015-03-03 Aplus Flash Technology, Inc. Pseudo-8T NVSRAM cell with a charge-follower
US8976588B2 (en) 2012-11-01 2015-03-10 Aplus Flash Technology, Inc. NVSRAM cells with voltage flash charger
KR101906966B1 (ko) 2012-11-05 2018-12-07 삼성전자주식회사 논리 장치 및 이의 동작 방법
GB2508221B (en) * 2012-11-26 2015-02-25 Surecore Ltd Low-Power SRAM Cells
FR3007185B1 (fr) * 2013-06-12 2015-06-19 St Microelectronics Rousset Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement
US10192626B1 (en) 2017-08-31 2019-01-29 Micro Technology, Inc. Responding to power loss
US10373694B2 (en) * 2017-08-31 2019-08-06 Micron Technology, Inc. Responding to power loss

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US4527255A (en) 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
US5805496A (en) 1996-12-27 1998-09-08 International Business Machines Corporation Four device SRAM cell with single bitline
US5914895A (en) 1997-09-10 1999-06-22 Cypress Semiconductor Corp. Non-volatile random access memory and methods for making and configuring same

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FR2517142A1 (fr) 1981-11-20 1983-05-27 Efcis Bascule bistable a stockage non volatil et a repositionnement statique
JPS60151898A (ja) 1984-01-18 1985-08-09 Nec Corp 不揮発性ランダムアクセスメモリセル
JPS6233393A (ja) 1985-08-06 1987-02-13 Nissan Motor Co Ltd 半導体不揮発性メモリ装置
JPH0397197A (ja) 1989-09-08 1991-04-23 Kawasaki Steel Corp メモリセル
US5440508A (en) 1994-02-09 1995-08-08 Atmel Corporation Zero power high speed programmable circuit device architecture
JPH07226088A (ja) 1994-02-15 1995-08-22 Nippon Steel Corp 半導体記憶装置
JP3450896B2 (ja) 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US5548228A (en) 1994-09-28 1996-08-20 Altera Corporation Reconfigurable programmable logic device having static and non-volatile memory
US5602776A (en) * 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
US6122191A (en) * 1996-05-01 2000-09-19 Cypress Semiconductor Corporation Semiconductor non-volatile device including embedded non-volatile elements
US6285586B1 (en) * 2000-10-16 2001-09-04 Macronix International Co., Ltd. Nonvolatile static random access memory
US6304482B1 (en) * 2000-11-21 2001-10-16 Silicon Integrated Systems Corp. Apparatus of reducing power consumption of single-ended SRAM
JP2002237191A (ja) * 2001-02-13 2002-08-23 Seiko Instruments Inc 相補型不揮発性記憶回路
US6414873B1 (en) * 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
US7164608B2 (en) * 2004-07-28 2007-01-16 Aplus Flash Technology, Inc. NVRAM memory cell architecture that integrates conventional SRAM and flash cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527255A (en) 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
US5805496A (en) 1996-12-27 1998-09-08 International Business Machines Corporation Four device SRAM cell with single bitline
US5914895A (en) 1997-09-10 1999-06-22 Cypress Semiconductor Corp. Non-volatile random access memory and methods for making and configuring same

Also Published As

Publication number Publication date
ATE403220T1 (de) 2008-08-15
JP2006527897A (ja) 2006-12-07
US7663917B2 (en) 2010-02-16
EP1639605A1 (en) 2006-03-29
DE602004015457D1 (de) 2008-09-11
EP1639605B1 (en) 2008-07-30
KR20060025176A (ko) 2006-03-20
CN1809894B (zh) 2011-12-28
CN1809894A (zh) 2006-07-26
US20060158925A1 (en) 2006-07-20
WO2004112047A1 (en) 2004-12-23

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