JP2006527897A - 不揮発性スタティックメモリセル - Google Patents
不揮発性スタティックメモリセル Download PDFInfo
- Publication number
- JP2006527897A JP2006527897A JP2006516674A JP2006516674A JP2006527897A JP 2006527897 A JP2006527897 A JP 2006527897A JP 2006516674 A JP2006516674 A JP 2006516674A JP 2006516674 A JP2006516674 A JP 2006516674A JP 2006527897 A JP2006527897 A JP 2006527897A
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- JP
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- Prior art keywords
- memory
- volatile
- memory device
- node
- static
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-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (12)
- 読み出し及び又は書き込みデータ線と伝達可能に接続された少なくとも第一及び第二ノードを定めるスタティックメモリ手段と、
前記スタティックメモリ手段と関連し、保存したデータを前記スタティックメモリ手段に書き込む少なくとも一つの不揮発性メモリ手段とを単一の集積回路パッケージ内に備えたメモリ装置であって、
前記不揮発性メモリ手段は前記第一及び第二ノードに各々クロスカップリングされた少なくとも二つの不揮発性メモリ要素を備えたことを特徴とするメモリ装置。 - 前記不揮発性メモリ要素は内蔵フラッシュ又はEEPROM要素を備える請求項1に記載のメモリ装置。
- 前記不揮発性メモリ要素は二重又は一重のポリ浮遊ゲート型メモリセルを備える請求項1又は2に記載のメモリ装置。
- 前記不揮発性メモリ要素は電荷のトンネリングによりプログラムされ、そして、消去される装置を備える請求項1に記載のメモリ装置。
- 前記クロスカップリングされた不揮発性メモリ要素は相反するデータでプログラムされる請求項1乃至4いずれか一項に記載のメモリ装置。
- 前記スタティックメモリ手段は一組のクロスカップリングされたインバータを備える請求項1乃至5いずれか一項に記載のメモリ装置。
- 第一不揮発性要素は第一ノードに接続された制御ゲートと第二ノードに接続されたソースとを有し、第二不揮発性要素は前記第二ノードに接続された制御ゲートと前記第一ノードに接続されたソースとを有する請求項1乃至6いずれか一項に記載のメモリ装置。
- 各不揮発性要素のドレインは各自のトランジスタにより供給手段に接続された請求項7に記載のメモリ装置。
- 一つ以上の各選択トランジスタが設けられ、該選択トランジスタにより前記ノードが前記読み出し及び又は書き込みデータ線に伝達可能に接続された請求項1乃至8いずれか一項に記載のメモリ装置。
- 一つ以上の分離トランジスタを含む請求項1乃至9いずれか一項に記載のメモリ装置。
- 請求項1乃至10いずれか一項に記載のメモリ装置を含む再構成可能なプログラマブル論理装置。
- 請求項1乃至11いずれか一項に記載のメモリ装置を含むフィールドプログラマブルゲートアレイ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101770 | 2003-06-17 | ||
PCT/IB2004/050882 WO2004112047A1 (en) | 2003-06-17 | 2004-06-10 | Non-volatile static memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006527897A true JP2006527897A (ja) | 2006-12-07 |
JP2006527897A5 JP2006527897A5 (ja) | 2007-07-26 |
Family
ID=33547730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006516674A Pending JP2006527897A (ja) | 2003-06-17 | 2004-06-10 | 不揮発性スタティックメモリセル |
Country Status (8)
Country | Link |
---|---|
US (1) | US7663917B2 (ja) |
EP (1) | EP1639605B1 (ja) |
JP (1) | JP2006527897A (ja) |
KR (1) | KR101066938B1 (ja) |
CN (1) | CN1809894B (ja) |
AT (1) | ATE403220T1 (ja) |
DE (1) | DE602004015457D1 (ja) |
WO (1) | WO2004112047A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008515122A (ja) * | 2004-09-27 | 2008-05-08 | オーストリアマイクロシステムス アーゲー | 不揮発性記憶素子 |
JP2010166255A (ja) * | 2009-01-14 | 2010-07-29 | Rohm Co Ltd | プログラマブルロジックデバイスおよびそれを用いた信号処理回路 |
JP2014086435A (ja) * | 2012-10-19 | 2014-05-12 | Floadia Co Ltd | 不揮発性半導体記憶装置 |
US9183914B2 (en) | 2011-11-25 | 2015-11-10 | Renesas Electronics Corporation | Semiconductor memory device |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4792034B2 (ja) | 2005-08-08 | 2011-10-12 | スパンション エルエルシー | 半導体装置およびその制御方法 |
US8036032B2 (en) * | 2007-12-31 | 2011-10-11 | Cypress Semiconductor Corporation | 5T high density NVDRAM cell |
US8605490B2 (en) * | 2009-10-12 | 2013-12-10 | Micron Technology, Inc. | Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process |
FR2952227B1 (fr) * | 2009-10-29 | 2013-09-06 | St Microelectronics Rousset | Dispositif de memoire du type electriquement programmable et effacable, a deux cellules par bit |
US8406064B2 (en) | 2010-07-30 | 2013-03-26 | Qualcomm Incorporated | Latching circuit |
US9779814B2 (en) * | 2011-08-09 | 2017-10-03 | Flashsilicon Incorporation | Non-volatile static random access memory devices and methods of operations |
CN103544992A (zh) * | 2012-07-10 | 2014-01-29 | 珠海艾派克微电子有限公司 | 一种非易失性高速存储单元,其存储器及其内部数据转存的控制方法 |
US9177644B2 (en) | 2012-08-15 | 2015-11-03 | Aplus Flash Technology, Inc. | Low-voltage fast-write PMOS NVSRAM cell |
US8964470B2 (en) | 2012-09-25 | 2015-02-24 | Aplus Flash Technology, Inc. | Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays |
US9001583B2 (en) | 2012-10-15 | 2015-04-07 | Aplus Flash Technology, Inc. | On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation |
US9177645B2 (en) * | 2012-10-19 | 2015-11-03 | Aplus Flash Technology, Inc. | 10T NVSRAM cell and cell operations |
US8929136B2 (en) | 2012-10-26 | 2015-01-06 | Aplus Flash Technology, Inc. | 8T NVSRAM cell and cell operations |
US8971113B2 (en) | 2012-10-30 | 2015-03-03 | Aplus Flash Technology, Inc. | Pseudo-8T NVSRAM cell with a charge-follower |
US8976588B2 (en) | 2012-11-01 | 2015-03-10 | Aplus Flash Technology, Inc. | NVSRAM cells with voltage flash charger |
KR101906966B1 (ko) | 2012-11-05 | 2018-12-07 | 삼성전자주식회사 | 논리 장치 및 이의 동작 방법 |
GB2508221B (en) * | 2012-11-26 | 2015-02-25 | Surecore Ltd | Low-Power SRAM Cells |
FR3007185B1 (fr) * | 2013-06-12 | 2015-06-19 | St Microelectronics Rousset | Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement |
US10373694B2 (en) * | 2017-08-31 | 2019-08-06 | Micron Technology, Inc. | Responding to power loss |
US10192626B1 (en) | 2017-08-31 | 2019-01-29 | Micro Technology, Inc. | Responding to power loss |
Family Cites Families (18)
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FR2517142A1 (fr) * | 1981-11-20 | 1983-05-27 | Efcis | Bascule bistable a stockage non volatil et a repositionnement statique |
US4527255A (en) * | 1982-07-06 | 1985-07-02 | Signetics Corporation | Non-volatile static random-access memory cell |
JPS60151898A (ja) | 1984-01-18 | 1985-08-09 | Nec Corp | 不揮発性ランダムアクセスメモリセル |
JPS6233393A (ja) | 1985-08-06 | 1987-02-13 | Nissan Motor Co Ltd | 半導体不揮発性メモリ装置 |
JPH0397197A (ja) | 1989-09-08 | 1991-04-23 | Kawasaki Steel Corp | メモリセル |
US5440508A (en) | 1994-02-09 | 1995-08-08 | Atmel Corporation | Zero power high speed programmable circuit device architecture |
JPH07226088A (ja) * | 1994-02-15 | 1995-08-22 | Nippon Steel Corp | 半導体記憶装置 |
JP3450896B2 (ja) * | 1994-04-01 | 2003-09-29 | 三菱電機株式会社 | 不揮発性メモリ装置 |
US5548228A (en) * | 1994-09-28 | 1996-08-20 | Altera Corporation | Reconfigurable programmable logic device having static and non-volatile memory |
US5602776A (en) * | 1994-10-17 | 1997-02-11 | Simtek Corporation | Non-Volatile, static random access memory with current limiting |
US6122191A (en) * | 1996-05-01 | 2000-09-19 | Cypress Semiconductor Corporation | Semiconductor non-volatile device including embedded non-volatile elements |
US5805496A (en) * | 1996-12-27 | 1998-09-08 | International Business Machines Corporation | Four device SRAM cell with single bitline |
US5914895A (en) | 1997-09-10 | 1999-06-22 | Cypress Semiconductor Corp. | Non-volatile random access memory and methods for making and configuring same |
US6285586B1 (en) * | 2000-10-16 | 2001-09-04 | Macronix International Co., Ltd. | Nonvolatile static random access memory |
US6304482B1 (en) * | 2000-11-21 | 2001-10-16 | Silicon Integrated Systems Corp. | Apparatus of reducing power consumption of single-ended SRAM |
JP2002237191A (ja) * | 2001-02-13 | 2002-08-23 | Seiko Instruments Inc | 相補型不揮発性記憶回路 |
US6414873B1 (en) * | 2001-03-16 | 2002-07-02 | Simtek Corporation | nvSRAM with multiple non-volatile memory cells for each SRAM memory cell |
US7164608B2 (en) * | 2004-07-28 | 2007-01-16 | Aplus Flash Technology, Inc. | NVRAM memory cell architecture that integrates conventional SRAM and flash cells |
-
2004
- 2004-06-10 JP JP2006516674A patent/JP2006527897A/ja active Pending
- 2004-06-10 EP EP04736564A patent/EP1639605B1/en not_active Expired - Lifetime
- 2004-06-10 KR KR1020057024108A patent/KR101066938B1/ko not_active IP Right Cessation
- 2004-06-10 US US10/560,677 patent/US7663917B2/en not_active Expired - Fee Related
- 2004-06-10 AT AT04736564T patent/ATE403220T1/de not_active IP Right Cessation
- 2004-06-10 WO PCT/IB2004/050882 patent/WO2004112047A1/en active IP Right Grant
- 2004-06-10 CN CN2004800169669A patent/CN1809894B/zh not_active Expired - Fee Related
- 2004-06-10 DE DE602004015457T patent/DE602004015457D1/de not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008515122A (ja) * | 2004-09-27 | 2008-05-08 | オーストリアマイクロシステムス アーゲー | 不揮発性記憶素子 |
JP4673893B2 (ja) * | 2004-09-27 | 2011-04-20 | オーストリアマイクロシステムス アーゲー | 不揮発性記憶素子 |
JP2010166255A (ja) * | 2009-01-14 | 2010-07-29 | Rohm Co Ltd | プログラマブルロジックデバイスおよびそれを用いた信号処理回路 |
US9183914B2 (en) | 2011-11-25 | 2015-11-10 | Renesas Electronics Corporation | Semiconductor memory device |
JP2014086435A (ja) * | 2012-10-19 | 2014-05-12 | Floadia Co Ltd | 不揮発性半導体記憶装置 |
US9502109B2 (en) | 2012-10-19 | 2016-11-22 | Floadia Corporation | Non-volatile semiconductor storage device |
Also Published As
Publication number | Publication date |
---|---|
EP1639605B1 (en) | 2008-07-30 |
ATE403220T1 (de) | 2008-08-15 |
CN1809894B (zh) | 2011-12-28 |
KR101066938B1 (ko) | 2011-09-23 |
US7663917B2 (en) | 2010-02-16 |
EP1639605A1 (en) | 2006-03-29 |
KR20060025176A (ko) | 2006-03-20 |
DE602004015457D1 (de) | 2008-09-11 |
WO2004112047A1 (en) | 2004-12-23 |
US20060158925A1 (en) | 2006-07-20 |
CN1809894A (zh) | 2006-07-26 |
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