ATE403220T1 - Nichtflüchtige, statische speicherzelle - Google Patents
Nichtflüchtige, statische speicherzelleInfo
- Publication number
- ATE403220T1 ATE403220T1 AT04736564T AT04736564T ATE403220T1 AT E403220 T1 ATE403220 T1 AT E403220T1 AT 04736564 T AT04736564 T AT 04736564T AT 04736564 T AT04736564 T AT 04736564T AT E403220 T1 ATE403220 T1 AT E403220T1
- Authority
- AT
- Austria
- Prior art keywords
- volatile
- static memory
- memory cell
- control gate
- source
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101770 | 2003-06-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE403220T1 true ATE403220T1 (de) | 2008-08-15 |
Family
ID=33547730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04736564T ATE403220T1 (de) | 2003-06-17 | 2004-06-10 | Nichtflüchtige, statische speicherzelle |
Country Status (8)
Country | Link |
---|---|
US (1) | US7663917B2 (de) |
EP (1) | EP1639605B1 (de) |
JP (1) | JP2006527897A (de) |
KR (1) | KR101066938B1 (de) |
CN (1) | CN1809894B (de) |
AT (1) | ATE403220T1 (de) |
DE (1) | DE602004015457D1 (de) |
WO (1) | WO2004112047A1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004046793B3 (de) * | 2004-09-27 | 2006-05-11 | Austriamicrosystems Ag | Nicht-flüchtiges Speicherelement |
JP4792034B2 (ja) | 2005-08-08 | 2011-10-12 | スパンション エルエルシー | 半導体装置およびその制御方法 |
US8036032B2 (en) * | 2007-12-31 | 2011-10-11 | Cypress Semiconductor Corporation | 5T high density NVDRAM cell |
JP5336205B2 (ja) * | 2009-01-14 | 2013-11-06 | ローム株式会社 | プログラマブルロジックデバイスを用いた信号処理回路 |
US8605490B2 (en) * | 2009-10-12 | 2013-12-10 | Micron Technology, Inc. | Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process |
FR2952227B1 (fr) * | 2009-10-29 | 2013-09-06 | St Microelectronics Rousset | Dispositif de memoire du type electriquement programmable et effacable, a deux cellules par bit |
US8406064B2 (en) | 2010-07-30 | 2013-03-26 | Qualcomm Incorporated | Latching circuit |
US9779814B2 (en) * | 2011-08-09 | 2017-10-03 | Flashsilicon Incorporation | Non-volatile static random access memory devices and methods of operations |
JP5823833B2 (ja) | 2011-11-25 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
CN103544992A (zh) * | 2012-07-10 | 2014-01-29 | 珠海艾派克微电子有限公司 | 一种非易失性高速存储单元,其存储器及其内部数据转存的控制方法 |
US9177644B2 (en) | 2012-08-15 | 2015-11-03 | Aplus Flash Technology, Inc. | Low-voltage fast-write PMOS NVSRAM cell |
US8964470B2 (en) | 2012-09-25 | 2015-02-24 | Aplus Flash Technology, Inc. | Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays |
US9001583B2 (en) | 2012-10-15 | 2015-04-07 | Aplus Flash Technology, Inc. | On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation |
JP5556873B2 (ja) * | 2012-10-19 | 2014-07-23 | 株式会社フローディア | 不揮発性半導体記憶装置 |
US9177645B2 (en) * | 2012-10-19 | 2015-11-03 | Aplus Flash Technology, Inc. | 10T NVSRAM cell and cell operations |
US8929136B2 (en) | 2012-10-26 | 2015-01-06 | Aplus Flash Technology, Inc. | 8T NVSRAM cell and cell operations |
US8971113B2 (en) | 2012-10-30 | 2015-03-03 | Aplus Flash Technology, Inc. | Pseudo-8T NVSRAM cell with a charge-follower |
US8976588B2 (en) | 2012-11-01 | 2015-03-10 | Aplus Flash Technology, Inc. | NVSRAM cells with voltage flash charger |
KR101906966B1 (ko) | 2012-11-05 | 2018-12-07 | 삼성전자주식회사 | 논리 장치 및 이의 동작 방법 |
GB2508221B (en) * | 2012-11-26 | 2015-02-25 | Surecore Ltd | Low-Power SRAM Cells |
FR3007185B1 (fr) * | 2013-06-12 | 2015-06-19 | St Microelectronics Rousset | Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement |
US10373694B2 (en) * | 2017-08-31 | 2019-08-06 | Micron Technology, Inc. | Responding to power loss |
US10192626B1 (en) | 2017-08-31 | 2019-01-29 | Micro Technology, Inc. | Responding to power loss |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2517142A1 (fr) * | 1981-11-20 | 1983-05-27 | Efcis | Bascule bistable a stockage non volatil et a repositionnement statique |
US4527255A (en) * | 1982-07-06 | 1985-07-02 | Signetics Corporation | Non-volatile static random-access memory cell |
JPS60151898A (ja) | 1984-01-18 | 1985-08-09 | Nec Corp | 不揮発性ランダムアクセスメモリセル |
JPS6233393A (ja) | 1985-08-06 | 1987-02-13 | Nissan Motor Co Ltd | 半導体不揮発性メモリ装置 |
JPH0397197A (ja) | 1989-09-08 | 1991-04-23 | Kawasaki Steel Corp | メモリセル |
US5440508A (en) | 1994-02-09 | 1995-08-08 | Atmel Corporation | Zero power high speed programmable circuit device architecture |
JPH07226088A (ja) * | 1994-02-15 | 1995-08-22 | Nippon Steel Corp | 半導体記憶装置 |
JP3450896B2 (ja) * | 1994-04-01 | 2003-09-29 | 三菱電機株式会社 | 不揮発性メモリ装置 |
US5548228A (en) * | 1994-09-28 | 1996-08-20 | Altera Corporation | Reconfigurable programmable logic device having static and non-volatile memory |
US5602776A (en) * | 1994-10-17 | 1997-02-11 | Simtek Corporation | Non-Volatile, static random access memory with current limiting |
US6122191A (en) * | 1996-05-01 | 2000-09-19 | Cypress Semiconductor Corporation | Semiconductor non-volatile device including embedded non-volatile elements |
US5805496A (en) * | 1996-12-27 | 1998-09-08 | International Business Machines Corporation | Four device SRAM cell with single bitline |
US5914895A (en) | 1997-09-10 | 1999-06-22 | Cypress Semiconductor Corp. | Non-volatile random access memory and methods for making and configuring same |
US6285586B1 (en) * | 2000-10-16 | 2001-09-04 | Macronix International Co., Ltd. | Nonvolatile static random access memory |
US6304482B1 (en) * | 2000-11-21 | 2001-10-16 | Silicon Integrated Systems Corp. | Apparatus of reducing power consumption of single-ended SRAM |
JP2002237191A (ja) * | 2001-02-13 | 2002-08-23 | Seiko Instruments Inc | 相補型不揮発性記憶回路 |
US6414873B1 (en) * | 2001-03-16 | 2002-07-02 | Simtek Corporation | nvSRAM with multiple non-volatile memory cells for each SRAM memory cell |
US7164608B2 (en) * | 2004-07-28 | 2007-01-16 | Aplus Flash Technology, Inc. | NVRAM memory cell architecture that integrates conventional SRAM and flash cells |
-
2004
- 2004-06-10 JP JP2006516674A patent/JP2006527897A/ja active Pending
- 2004-06-10 EP EP04736564A patent/EP1639605B1/de not_active Expired - Lifetime
- 2004-06-10 KR KR1020057024108A patent/KR101066938B1/ko not_active IP Right Cessation
- 2004-06-10 US US10/560,677 patent/US7663917B2/en not_active Expired - Fee Related
- 2004-06-10 AT AT04736564T patent/ATE403220T1/de not_active IP Right Cessation
- 2004-06-10 WO PCT/IB2004/050882 patent/WO2004112047A1/en active IP Right Grant
- 2004-06-10 CN CN2004800169669A patent/CN1809894B/zh not_active Expired - Fee Related
- 2004-06-10 DE DE602004015457T patent/DE602004015457D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1639605B1 (de) | 2008-07-30 |
CN1809894B (zh) | 2011-12-28 |
KR101066938B1 (ko) | 2011-09-23 |
US7663917B2 (en) | 2010-02-16 |
EP1639605A1 (de) | 2006-03-29 |
KR20060025176A (ko) | 2006-03-20 |
DE602004015457D1 (de) | 2008-09-11 |
WO2004112047A1 (en) | 2004-12-23 |
US20060158925A1 (en) | 2006-07-20 |
CN1809894A (zh) | 2006-07-26 |
JP2006527897A (ja) | 2006-12-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |