ATE493763T1 - Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden - Google Patents

Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden

Info

Publication number
ATE493763T1
ATE493763T1 AT07002289T AT07002289T ATE493763T1 AT E493763 T1 ATE493763 T1 AT E493763T1 AT 07002289 T AT07002289 T AT 07002289T AT 07002289 T AT07002289 T AT 07002289T AT E493763 T1 ATE493763 T1 AT E493763T1
Authority
AT
Austria
Prior art keywords
integrated multi
volatile integrated
dielectric
memory elements
state memory
Prior art date
Application number
AT07002289T
Other languages
English (en)
Inventor
Eliyahou Harari
George Samachisa
Jack H Yuan
Daniel C Gutermann
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/280,352 external-priority patent/US6925007B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE493763T1 publication Critical patent/ATE493763T1/de

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B43/00EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234Gate electrodes for transistors with charge trapping gate insulator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923Programmable transistors with more than two possible different levels of programmation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491Virtual ground arrays
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02Structural aspects of erasable programmable read-only memories
    • G11C2216/06Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT07002289T 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden ATE493763T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/002,696 US6897522B2 (en) 2001-10-31 2001-10-31 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US10/161,235 US20030080370A1 (en) 2001-10-31 2002-05-31 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US10/280,352 US6925007B2 (en) 2001-10-31 2002-10-25 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements

Publications (1)

Publication Number Publication Date
ATE493763T1 true ATE493763T1 (de) 2011-01-15

Family

ID=21702020

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07002288T ATE441211T1 (de) 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden
AT07002289T ATE493763T1 (de) 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT07002288T ATE441211T1 (de) 2001-10-31 2002-10-31 Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden

Country Status (7)

Country Link
US (2) US6897522B2 (de)
JP (1) JP4846979B2 (de)
KR (1) KR101124259B1 (de)
CN (1) CN101140799B (de)
AT (2) ATE441211T1 (de)
DE (2) DE60233533D1 (de)
TW (3) TWI318786B (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6925007B2 (en) * 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6542407B1 (en) 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
JP2003309194A (ja) * 2002-04-18 2003-10-31 Nec Electronics Corp 半導体記憶装置とその製造方法
US6906376B1 (en) * 2002-06-13 2005-06-14 A Plus Flash Technology, Inc. EEPROM cell structure and array architecture
JP4412903B2 (ja) * 2002-06-24 2010-02-10 株式会社ルネサステクノロジ 半導体装置
US6888200B2 (en) * 2002-08-30 2005-05-03 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6917078B2 (en) * 2002-08-30 2005-07-12 Micron Technology Inc. One transistor SOI non-volatile random access memory cell
US6781877B2 (en) 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
US6898129B2 (en) * 2002-10-25 2005-05-24 Freescale Semiconductor, Inc. Erase of a memory having a non-conductive storage medium
US6912163B2 (en) * 2003-01-14 2005-06-28 Fasl, Llc Memory device having high work function gate and method of erasing same
US6885590B1 (en) 2003-01-14 2005-04-26 Advanced Micro Devices, Inc. Memory device having A P+ gate and thin bottom oxide and method of erasing same
US6956768B2 (en) * 2003-04-15 2005-10-18 Advanced Micro Devices, Inc. Method of programming dual cell memory device to store multiple data states per cell
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US20050035429A1 (en) * 2003-08-15 2005-02-17 Yeh Chih Chieh Programmable eraseless memory
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
US7180123B2 (en) * 2003-07-21 2007-02-20 Macronix International Co., Ltd. Method for programming programmable eraseless memory
US7057931B2 (en) * 2003-11-07 2006-06-06 Sandisk Corporation Flash memory programming using gate induced junction leakage current
US7050330B2 (en) * 2003-12-16 2006-05-23 Micron Technology, Inc. Multi-state NROM device
US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
US7072217B2 (en) * 2004-02-24 2006-07-04 Micron Technology, Inc. Multi-state memory cell with asymmetric charge trapping
US20060007732A1 (en) * 2004-07-06 2006-01-12 Macronix International Co., Ltd. Charge trapping non-volatile memory and method for operating same
US7345920B2 (en) * 2004-09-09 2008-03-18 Macronix International Co., Ltd. Method and apparatus for sensing in charge trapping non-volatile memory
US7170785B2 (en) * 2004-09-09 2007-01-30 Macronix International Co., Ltd. Method and apparatus for operating a string of charge trapping memory cells
US20060054964A1 (en) * 2004-09-15 2006-03-16 Mark Isler Semiconductor device and method for fabricating a region thereon
WO2006030380A1 (en) * 2004-09-15 2006-03-23 Koninklijke Philips Electronics N.V. A sonos memory device with optimized shallow trench isolation
US7381615B2 (en) * 2004-11-23 2008-06-03 Sandisk Corporation Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
US7402886B2 (en) * 2004-11-23 2008-07-22 Sandisk Corporation Memory with self-aligned trenches for narrow gap isolation regions
US20060197144A1 (en) * 2005-03-01 2006-09-07 Mammen Thomas Nitride storage cells with and without select gate
TWI271827B (en) * 2005-11-11 2007-01-21 Powerchip Semiconductor Corp Non-volatile memory and manufacturing method and operating method thereof
US7482651B2 (en) * 2005-12-09 2009-01-27 Micron Technology, Inc. Enhanced multi-bit non-volatile memory device with resonant tunnel barrier
US7414889B2 (en) * 2006-05-23 2008-08-19 Macronix International Co., Ltd. Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
KR100771882B1 (ko) * 2006-09-06 2007-11-01 삼성전자주식회사 멀티-레벨 불휘발성 메모리 장치의 프로그램 방법
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7888210B2 (en) * 2007-12-19 2011-02-15 Sandisk Corporation Non-volatile memory fabrication and isolation for composite charge storage structures
JP5558695B2 (ja) * 2008-11-18 2014-07-23 株式会社東芝 不揮発性半導体記憶装置
TWI473253B (zh) * 2010-04-07 2015-02-11 Macronix Int Co Ltd 具有連續電荷儲存介電堆疊的非揮發記憶陣列
US8547743B2 (en) * 2011-06-28 2013-10-01 Seagate Technology Llc Read error recovery for solid-state memory based on cumulative background charges
US9312017B2 (en) * 2014-01-15 2016-04-12 Apple Inc. Storage in charge-trap memory structures using additional electrically-charged regions
US9123575B1 (en) * 2014-07-21 2015-09-01 Avalanche Technology, Inc. Semiconductor memory device having increased separation between memory elements
US9548448B1 (en) 2015-11-12 2017-01-17 Avalanche Technology, Inc. Memory device with increased separation between memory elements
US10431576B1 (en) 2018-04-20 2019-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell array and method of manufacturing same
US11744065B2 (en) 2021-09-22 2023-08-29 International Business Machines Corporation Read-only memory for chip security that is MOSFET process compatible

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979582A (en) * 1974-09-17 1976-09-07 Westinghouse Electric Corporation Discrete analog processing system including a matrix of memory elements
JPS5346621B2 (de) * 1974-10-21 1978-12-15
US4112507A (en) 1976-01-30 1978-09-05 Westinghouse Electric Corp. Addressable MNOS cell for non-volatile memories
US4398248A (en) 1980-10-20 1983-08-09 Mcdonnell Douglas Corporation Adaptive WSI/MNOS solid state memory system
US4173766A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
US4527257A (en) 1982-08-25 1985-07-02 Westinghouse Electric Corp. Common memory gate non-volatile transistor memory
JPS59111370A (ja) 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
US5168334A (en) * 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
US4870470A (en) 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
JPH0594699A (ja) * 1991-09-30 1993-04-16 Hitachi Ltd 半導体記憶装置
JPH05110114A (ja) * 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
JPH05129624A (ja) * 1991-11-06 1993-05-25 Rohm Co Ltd 半導体記憶装置
JPH05129564A (ja) * 1991-11-06 1993-05-25 Kawasaki Steel Corp 半導体記憶装置及びその製造方法
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5712180A (en) 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
GB9217743D0 (en) 1992-08-19 1992-09-30 Philips Electronics Uk Ltd A semiconductor memory device
US5436481A (en) 1993-01-21 1995-07-25 Nippon Steel Corporation MOS-type semiconductor device and method of making the same
US5424978A (en) * 1993-03-15 1995-06-13 Nippon Steel Corporation Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same
US5555204A (en) * 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US5887145A (en) 1993-09-01 1999-03-23 Sandisk Corporation Removable mother/daughter peripheral card
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5539690A (en) * 1994-06-02 1996-07-23 Intel Corporation Write verify schemes for flash memory with multilevel cells
JP3635681B2 (ja) 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6054734A (en) * 1996-07-26 2000-04-25 Sony Corporation Non-volatile memory cell having dual gate electrodes
US6137718A (en) 1996-08-01 2000-10-24 Siemens Aktiengesellschaft Method for operating a non-volatile memory cell arrangement
US5889303A (en) * 1997-04-07 1999-03-30 Motorola, Inc. Split-Control gate electrically erasable programmable read only memory (EEPROM) cell
GB2325546B (en) * 1997-05-21 2001-10-17 Motorola Inc Electrically programmable memory and method of programming
US6297096B1 (en) 1997-06-11 2001-10-02 Saifun Semiconductors Ltd. NROM fabrication method
US5824584A (en) * 1997-06-16 1998-10-20 Motorola, Inc. Method of making and accessing split gate memory device
US5969383A (en) * 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US5851881A (en) 1997-10-06 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making monos flash memory for multi-level logic
US5912844A (en) * 1998-01-28 1999-06-15 Macronix International Co., Ltd. Method for flash EEPROM data writing
US6030871A (en) 1998-05-05 2000-02-29 Saifun Semiconductors Ltd. Process for producing two bit ROM cell utilizing angled implant
US6215148B1 (en) 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6348711B1 (en) 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6346725B1 (en) * 1998-05-22 2002-02-12 Winbond Electronics Corporation Contact-less array of fully self-aligned, triple polysilicon, source-side injection, nonvolatile memory cells with metal-overlaid wordlines
US6281075B1 (en) 1999-01-27 2001-08-28 Sandisk Corporation Method of controlling of floating gate oxide growth by use of an oxygen barrier
US6256231B1 (en) 1999-02-04 2001-07-03 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells and method of implementing same
US6181597B1 (en) * 1999-02-04 2001-01-30 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells with serial read operations
US6103573A (en) 1999-06-30 2000-08-15 Sandisk Corporation Processing techniques for making a dual floating gate EEPROM cell array
US6151248A (en) 1999-06-30 2000-11-21 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6454528B2 (en) * 1999-08-04 2002-09-24 Mccabe Francis J. Intake and exhaust damper with movable motor fan assembly
US6255166B1 (en) * 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array
US6388293B1 (en) * 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array
US6091633A (en) 1999-08-09 2000-07-18 Sandisk Corporation Memory array architecture utilizing global bit lines shared by multiple cells
JP3912937B2 (ja) * 1999-08-10 2007-05-09 スパンション インク 非導電性のチャージトラップゲートを利用した多ビット不揮発性メモリ
KR100343210B1 (ko) * 1999-08-11 2002-07-10 윤종용 단일 전자 충전 mnos계 메모리 및 그 구동 방법
JP2001110918A (ja) * 1999-10-04 2001-04-20 Fujitsu Ltd 不揮発性半導体記憶装置
JP2001148434A (ja) * 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
US6177318B1 (en) * 1999-10-18 2001-01-23 Halo Lsi Design & Device Technology, Inc. Integration method for sidewall split gate monos transistor
US6406960B1 (en) 1999-10-25 2002-06-18 Advanced Micro Devices, Inc. Process for fabricating an ONO structure having a silicon-rich silicon nitride layer
US6248633B1 (en) 1999-10-25 2001-06-19 Halo Lsi Design & Device Technology, Inc. Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory
US6429063B1 (en) 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
JP4923318B2 (ja) * 1999-12-17 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
US6331952B1 (en) * 2000-02-16 2001-12-18 Advanced Micro Devices, Inc. Positive gate erasure for non-volatile memory cells
US6331953B1 (en) * 2000-02-16 2001-12-18 Advanced Micro Devices Intelligent ramped gate and ramped drain erasure for non-volatile memory cells
US6266281B1 (en) * 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6215702B1 (en) * 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6366501B1 (en) 2000-02-29 2002-04-02 Advanced Micro Devices, Inc. Selective erasure of a non-volatile memory cell of a flash memory device
US6349062B1 (en) 2000-02-29 2002-02-19 Advanced Micro Devices, Inc. Selective erasure of a non-volatile memory cell of a flash memory device
US6888750B2 (en) 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
JP3573691B2 (ja) * 2000-07-03 2004-10-06 シャープ株式会社 不揮発性半導体記憶装置およびその製造方法
TW503528B (en) * 2000-07-12 2002-09-21 Koninkl Philips Electronics Nv Semiconductor device
US6487121B1 (en) * 2000-08-25 2002-11-26 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a vertical electric field
EP1215681B1 (de) * 2000-12-05 2008-04-16 Halo Lsi Design and Device Technology Inc. Programmier- und Löschverfahren in Zwilling-MONOS-Zellenspeichern
JP4050048B2 (ja) * 2000-12-15 2008-02-20 ヘイロ エルエスアイ インコーポレイテッド 高速プログラムおよびプログラム検証への高速切り替え方法
JP4325972B2 (ja) * 2001-01-30 2009-09-02 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置の製造方法
US6445030B1 (en) * 2001-01-30 2002-09-03 Advanced Micro Devices, Inc. Flash memory erase speed by fluorine implant or fluorination
TW476144B (en) 2001-02-02 2002-02-11 Macronix Int Co Ltd Non-volatile memory
US6531350B2 (en) * 2001-02-22 2003-03-11 Halo, Inc. Twin MONOS cell fabrication method and array organization
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US6418062B1 (en) * 2001-03-01 2002-07-09 Halo Lsi, Inc. Erasing methods by hot hole injection to carrier trap sites of a nonvolatile memory
EP1246196B1 (de) * 2001-03-15 2010-02-17 Halo, Inc. Doppelbit MONOS Speicherzellgebrauch für breite Programbandbreite
KR100375235B1 (ko) 2001-03-17 2003-03-08 삼성전자주식회사 에스.오.엔.오.에스 플래시 기억소자 및 그 형성 방법
US6493266B1 (en) * 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
KR100389130B1 (ko) 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
US6936887B2 (en) 2001-05-18 2005-08-30 Sandisk Corporation Non-volatile memory cells utilizing substrate trenches
US6580120B2 (en) * 2001-06-07 2003-06-17 Interuniversitair Microelektronica Centrum (Imec Vzw) Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
KR100395769B1 (ko) 2001-06-21 2003-08-21 삼성전자주식회사 비휘발성 메모리 장치의 소거 방법
DE10129958B4 (de) * 2001-06-21 2006-07-13 Infineon Technologies Ag Speicherzellenanordnung und Herstellungsverfahren
US6436768B1 (en) * 2001-06-27 2002-08-20 Advanced Micro Devices, Inc. Source drain implant during ONO formation for improved isolation of SONOS devices
TW583673B (en) * 2001-07-06 2004-04-11 Halo Lsi Inc A control gate decoder for twin MONOS memory with two bit erase capability
JP2003151290A (ja) * 2001-07-06 2003-05-23 Halo Lsi Inc コントロール・ゲート及びワード線電圧の昇圧回路
US6555865B2 (en) * 2001-07-10 2003-04-29 Samsung Electronics Co. Ltd. Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same
KR100399350B1 (ko) 2001-08-09 2003-09-26 삼성전자주식회사 부유 트랩형 소자를 가지는 비휘발성 반도체 메모리 장치및 그 제조방법
KR100407573B1 (ko) * 2001-08-09 2003-11-28 삼성전자주식회사 부유 트랩형 비휘발성 메모리 장치 형성 방법
US6670240B2 (en) * 2001-08-13 2003-12-30 Halo Lsi, Inc. Twin NAND device structure, array operations and fabrication method
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6456528B1 (en) * 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6413821B1 (en) * 2001-09-18 2002-07-02 Seiko Epson Corporation Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit
KR100454117B1 (ko) 2001-10-22 2004-10-26 삼성전자주식회사 소노스 게이트 구조를 갖는 낸드형 비휘발성 메모리소자의구동방법
DE10153561C2 (de) 2001-10-30 2003-09-04 Infineon Technologies Ag Chargetrappingspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung
DE10153384B4 (de) 2001-10-30 2007-08-02 Infineon Technologies Ag Halbleiterspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung
US20030134476A1 (en) 2002-01-17 2003-07-17 Yakov Roizin Oxide-nitride-oxide structure

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CN101140799A (zh) 2008-03-12
DE60233533D1 (de) 2009-10-08
US20030080370A1 (en) 2003-05-01
DE60238796D1 (de) 2011-02-10
KR20100006170A (ko) 2010-01-18
TWI351699B (en) 2011-11-01
US20030082871A1 (en) 2003-05-01
TW200924117A (en) 2009-06-01
TW200923943A (en) 2009-06-01
ATE441211T1 (de) 2009-09-15
US6897522B2 (en) 2005-05-24
CN101140799B (zh) 2011-06-08
TWI318786B (en) 2009-12-21
TWI344195B (en) 2011-06-21
JP4846979B2 (ja) 2011-12-28
TW200406887A (en) 2004-05-01
JP2005508094A (ja) 2005-03-24

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