CN1809894B - 非易失性静态存储器单元 - Google Patents

非易失性静态存储器单元 Download PDF

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Publication number
CN1809894B
CN1809894B CN2004800169669A CN200480016966A CN1809894B CN 1809894 B CN1809894 B CN 1809894B CN 2004800169669 A CN2004800169669 A CN 2004800169669A CN 200480016966 A CN200480016966 A CN 200480016966A CN 1809894 B CN1809894 B CN 1809894B
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CN
China
Prior art keywords
memory
volatile
memory devices
node
volatile elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2004800169669A
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English (en)
Chinese (zh)
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CN1809894A (zh
Inventor
R·库彭斯
A·M·H·迪特维格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Apple Technology Co ltd
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Publication of CN1809894A publication Critical patent/CN1809894A/zh
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Publication of CN1809894B publication Critical patent/CN1809894B/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
CN2004800169669A 2003-06-17 2004-06-10 非易失性静态存储器单元 Expired - Fee Related CN1809894B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP03101770 2003-06-17
EP03101770.0 2003-06-17
PCT/IB2004/050882 WO2004112047A1 (en) 2003-06-17 2004-06-10 Non-volatile static memory cell

Publications (2)

Publication Number Publication Date
CN1809894A CN1809894A (zh) 2006-07-26
CN1809894B true CN1809894B (zh) 2011-12-28

Family

ID=33547730

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800169669A Expired - Fee Related CN1809894B (zh) 2003-06-17 2004-06-10 非易失性静态存储器单元

Country Status (8)

Country Link
US (1) US7663917B2 (enExample)
EP (1) EP1639605B1 (enExample)
JP (1) JP2006527897A (enExample)
KR (1) KR101066938B1 (enExample)
CN (1) CN1809894B (enExample)
AT (1) ATE403220T1 (enExample)
DE (1) DE602004015457D1 (enExample)
WO (1) WO2004112047A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004046793B3 (de) * 2004-09-27 2006-05-11 Austriamicrosystems Ag Nicht-flüchtiges Speicherelement
WO2007017926A1 (ja) 2005-08-08 2007-02-15 Spansion Llc 半導体装置およびその制御方法
US8036032B2 (en) * 2007-12-31 2011-10-11 Cypress Semiconductor Corporation 5T high density NVDRAM cell
JP5336205B2 (ja) * 2009-01-14 2013-11-06 ローム株式会社 プログラマブルロジックデバイスを用いた信号処理回路
US8605490B2 (en) * 2009-10-12 2013-12-10 Micron Technology, Inc. Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
FR2952227B1 (fr) * 2009-10-29 2013-09-06 St Microelectronics Rousset Dispositif de memoire du type electriquement programmable et effacable, a deux cellules par bit
US8406064B2 (en) 2010-07-30 2013-03-26 Qualcomm Incorporated Latching circuit
US9779814B2 (en) * 2011-08-09 2017-10-03 Flashsilicon Incorporation Non-volatile static random access memory devices and methods of operations
JP5823833B2 (ja) 2011-11-25 2015-11-25 ルネサスエレクトロニクス株式会社 半導体記憶装置
CN103544992A (zh) * 2012-07-10 2014-01-29 珠海艾派克微电子有限公司 一种非易失性高速存储单元，其存储器及其内部数据转存的控制方法
US9177644B2 (en) 2012-08-15 2015-11-03 Aplus Flash Technology, Inc. Low-voltage fast-write PMOS NVSRAM cell
US8964470B2 (en) 2012-09-25 2015-02-24 Aplus Flash Technology, Inc. Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays
US9001583B2 (en) 2012-10-15 2015-04-07 Aplus Flash Technology, Inc. On-chip HV and LV capacitors acting as the second back-up supplies for NVSRAM auto-store operation
JP5556873B2 (ja) 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
US9177645B2 (en) * 2012-10-19 2015-11-03 Aplus Flash Technology, Inc. 10T NVSRAM cell and cell operations
US8929136B2 (en) 2012-10-26 2015-01-06 Aplus Flash Technology, Inc. 8T NVSRAM cell and cell operations
US8971113B2 (en) 2012-10-30 2015-03-03 Aplus Flash Technology, Inc. Pseudo-8T NVSRAM cell with a charge-follower
US8976588B2 (en) 2012-11-01 2015-03-10 Aplus Flash Technology, Inc. NVSRAM cells with voltage flash charger
KR101906966B1 (ko) 2012-11-05 2018-12-07 삼성전자주식회사 논리 장치 및 이의 동작 방법
GB2508221B (en) * 2012-11-26 2015-02-25 Surecore Ltd Low-Power SRAM Cells
FR3007185B1 (fr) * 2013-06-12 2015-06-19 St Microelectronics Rousset Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement
US10373694B2 (en) * 2017-08-31 2019-08-06 Micron Technology, Inc. Responding to power loss
US10192626B1 (en) 2017-08-31 2019-01-29 Micro Technology, Inc. Responding to power loss

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527255A (en) * 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
US5602776A (en) * 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
US6285586B1 (en) * 2000-10-16 2001-09-04 Macronix International Co., Ltd. Nonvolatile static random access memory

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
FR2517142A1 (fr) 1981-11-20 1983-05-27 Efcis Bascule bistable a stockage non volatil et a repositionnement statique
JPS60151898A (ja) * 1984-01-18 1985-08-09 Nec Corp 不揮発性ランダムアクセスメモリセル
JPS6233393A (ja) 1985-08-06 1987-02-13 Nissan Motor Co Ltd 半導体不揮発性メモリ装置
JPH0397197A (ja) 1989-09-08 1991-04-23 Kawasaki Steel Corp メモリセル
US5440508A (en) 1994-02-09 1995-08-08 Atmel Corporation Zero power high speed programmable circuit device architecture
JPH07226088A (ja) 1994-02-15 1995-08-22 Nippon Steel Corp 半導体記憶装置
JP3450896B2 (ja) * 1994-04-01 2003-09-29 三菱電機株式会社 不揮発性メモリ装置
US5548228A (en) * 1994-09-28 1996-08-20 Altera Corporation Reconfigurable programmable logic device having static and non-volatile memory
US6122191A (en) * 1996-05-01 2000-09-19 Cypress Semiconductor Corporation Semiconductor non-volatile device including embedded non-volatile elements
US5805496A (en) * 1996-12-27 1998-09-08 International Business Machines Corporation Four device SRAM cell with single bitline
US5914895A (en) * 1997-09-10 1999-06-22 Cypress Semiconductor Corp. Non-volatile random access memory and methods for making and configuring same
US6304482B1 (en) * 2000-11-21 2001-10-16 Silicon Integrated Systems Corp. Apparatus of reducing power consumption of single-ended SRAM
JP2002237191A (ja) * 2001-02-13 2002-08-23 Seiko Instruments Inc 相補型不揮発性記憶回路
US6414873B1 (en) * 2001-03-16 2002-07-02 Simtek Corporation nvSRAM with multiple non-volatile memory cells for each SRAM memory cell
US7164608B2 (en) * 2004-07-28 2007-01-16 Aplus Flash Technology, Inc. NVRAM memory cell architecture that integrates conventional SRAM and flash cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527255A (en) * 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
US5602776A (en) * 1994-10-17 1997-02-11 Simtek Corporation Non-Volatile, static random access memory with current limiting
US6285586B1 (en) * 2000-10-16 2001-09-04 Macronix International Co., Ltd. Nonvolatile static random access memory

Also Published As

Publication number Publication date
CN1809894A (zh) 2006-07-26
ATE403220T1 (de) 2008-08-15
WO2004112047A1 (en) 2004-12-23
KR101066938B1 (ko) 2011-09-23
JP2006527897A (ja) 2006-12-07
DE602004015457D1 (de) 2008-09-11
EP1639605B1 (en) 2008-07-30
US20060158925A1 (en) 2006-07-20
KR20060025176A (ko) 2006-03-20
EP1639605A1 (en) 2006-03-29
US7663917B2 (en) 2010-02-16

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C06 Publication
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SE01 Entry into force of request for substantive examination
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Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20071012

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20071012

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

ASS Succession or assignment of patent right

Owner name: KONINKL PHILIPS ELECTRONICS NV

Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV

Effective date: 20111026

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20111026

Address after: Delaware

Applicant after: NXP BV

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111228

Termination date: 20130610