JP2009129487A5 - - Google Patents

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Publication number
JP2009129487A5
JP2009129487A5 JP2007301370A JP2007301370A JP2009129487A5 JP 2009129487 A5 JP2009129487 A5 JP 2009129487A5 JP 2007301370 A JP2007301370 A JP 2007301370A JP 2007301370 A JP2007301370 A JP 2007301370A JP 2009129487 A5 JP2009129487 A5 JP 2009129487A5
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JP
Japan
Prior art keywords
side storage
true
storage transistor
transistor
bar
Prior art date
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Application number
JP2007301370A
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English (en)
Japanese (ja)
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JP2009129487A (ja
JP5313487B2 (ja
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Priority to JP2007301370A priority Critical patent/JP5313487B2/ja
Priority claimed from JP2007301370A external-priority patent/JP5313487B2/ja
Priority to US12/246,193 priority patent/US8106443B2/en
Publication of JP2009129487A publication Critical patent/JP2009129487A/ja
Priority to US12/782,378 priority patent/US8492826B2/en
Publication of JP2009129487A5 publication Critical patent/JP2009129487A5/ja
Priority to US13/350,703 priority patent/US20120112265A1/en
Application granted granted Critical
Publication of JP5313487B2 publication Critical patent/JP5313487B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007301370A 2007-10-09 2007-11-21 不揮発性半導体記憶素子および不揮発性半導体記憶装置 Expired - Fee Related JP5313487B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007301370A JP5313487B2 (ja) 2007-11-21 2007-11-21 不揮発性半導体記憶素子および不揮発性半導体記憶装置
US12/246,193 US8106443B2 (en) 2007-10-09 2008-10-06 Non-volatile semiconductor memory device
US12/782,378 US8492826B2 (en) 2007-10-09 2010-05-18 Non-volatile semiconductor memory device and manufacturing method thereof
US13/350,703 US20120112265A1 (en) 2007-10-09 2012-01-13 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007301370A JP5313487B2 (ja) 2007-11-21 2007-11-21 不揮発性半導体記憶素子および不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2009129487A JP2009129487A (ja) 2009-06-11
JP2009129487A5 true JP2009129487A5 (enExample) 2011-01-27
JP5313487B2 JP5313487B2 (ja) 2013-10-09

Family

ID=40820262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007301370A Expired - Fee Related JP5313487B2 (ja) 2007-10-09 2007-11-21 不揮発性半導体記憶素子および不揮発性半導体記憶装置

Country Status (1)

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JP (1) JP5313487B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5522296B2 (ja) * 2013-06-03 2014-06-18 凸版印刷株式会社 不揮発性半導体記憶装置
JP6220041B2 (ja) * 2016-12-15 2017-10-25 ローム株式会社 半導体不揮発記憶回路及びその試験方法
US20220254799A1 (en) * 2021-02-05 2022-08-11 Macronix International Co., Ltd. Semiconductor device and operation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257561A (ja) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp 半導体装置
US5029131A (en) * 1988-06-29 1991-07-02 Seeq Technology, Incorporated Fault tolerant differential memory cell and sensing
JPH0482093A (ja) * 1990-07-23 1992-03-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH05101683A (ja) * 1991-10-08 1993-04-23 Nec Corp 不揮発性半導体記憶装置
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4601316B2 (ja) * 2004-03-31 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2007004911A (ja) * 2005-06-24 2007-01-11 Sharp Corp 半導体記憶装置

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