JP2008042189A5 - - Google Patents

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Publication number
JP2008042189A5
JP2008042189A5 JP2007184098A JP2007184098A JP2008042189A5 JP 2008042189 A5 JP2008042189 A5 JP 2008042189A5 JP 2007184098 A JP2007184098 A JP 2007184098A JP 2007184098 A JP2007184098 A JP 2007184098A JP 2008042189 A5 JP2008042189 A5 JP 2008042189A5
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JP
Japan
Prior art keywords
memory
memory transistor
electrically connected
memory cell
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007184098A
Other languages
English (en)
Japanese (ja)
Other versions
JP5305620B2 (ja
JP2008042189A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007184098A priority Critical patent/JP5305620B2/ja
Priority claimed from JP2007184098A external-priority patent/JP5305620B2/ja
Publication of JP2008042189A publication Critical patent/JP2008042189A/ja
Publication of JP2008042189A5 publication Critical patent/JP2008042189A5/ja
Application granted granted Critical
Publication of JP5305620B2 publication Critical patent/JP5305620B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007184098A 2006-07-14 2007-07-13 不揮発性メモリ Expired - Fee Related JP5305620B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007184098A JP5305620B2 (ja) 2006-07-14 2007-07-13 不揮発性メモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006194660 2006-07-14
JP2006194660 2006-07-14
JP2007184098A JP5305620B2 (ja) 2006-07-14 2007-07-13 不揮発性メモリ

Publications (3)

Publication Number Publication Date
JP2008042189A JP2008042189A (ja) 2008-02-21
JP2008042189A5 true JP2008042189A5 (enExample) 2010-07-29
JP5305620B2 JP5305620B2 (ja) 2013-10-02

Family

ID=39176795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007184098A Expired - Fee Related JP5305620B2 (ja) 2006-07-14 2007-07-13 不揮発性メモリ

Country Status (1)

Country Link
JP (1) JP5305620B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537366B2 (ja) * 2009-10-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9847109B2 (en) * 2015-12-21 2017-12-19 Imec Vzw Memory cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321821A (ja) * 1997-05-14 1998-12-04 Sanyo Electric Co Ltd 不揮発性半導体メモリおよびその動作方法
JP2000068482A (ja) * 1998-08-18 2000-03-03 Toshiba Corp 不揮発性半導体メモリ
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법
JP5068402B2 (ja) * 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法

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