JP2012160247A5 - - Google Patents

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Publication number
JP2012160247A5
JP2012160247A5 JP2011182321A JP2011182321A JP2012160247A5 JP 2012160247 A5 JP2012160247 A5 JP 2012160247A5 JP 2011182321 A JP2011182321 A JP 2011182321A JP 2011182321 A JP2011182321 A JP 2011182321A JP 2012160247 A5 JP2012160247 A5 JP 2012160247A5
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JP
Japan
Prior art keywords
wiring
transistor
electrically connected
source
drain
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JP2011182321A
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English (en)
Japanese (ja)
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JP2012160247A (ja
JP5774413B2 (ja
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Priority claimed from JP2011182321A external-priority patent/JP5774413B2/ja
Publication of JP2012160247A publication Critical patent/JP2012160247A/ja
Publication of JP2012160247A5 publication Critical patent/JP2012160247A5/ja
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Publication of JP5774413B2 publication Critical patent/JP5774413B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011182321A 2010-08-26 2011-08-24 半導体装置の駆動方法 Expired - Fee Related JP5774413B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011182321A JP5774413B2 (ja) 2010-08-26 2011-08-24 半導体装置の駆動方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010189587 2010-08-26
JP2010189587 2010-08-26
JP2011005766 2011-01-14
JP2011005766 2011-01-14
JP2011182321A JP5774413B2 (ja) 2010-08-26 2011-08-24 半導体装置の駆動方法

Publications (3)

Publication Number Publication Date
JP2012160247A JP2012160247A (ja) 2012-08-23
JP2012160247A5 true JP2012160247A5 (enExample) 2014-09-25
JP5774413B2 JP5774413B2 (ja) 2015-09-09

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JP2011182321A Expired - Fee Related JP5774413B2 (ja) 2010-08-26 2011-08-24 半導体装置の駆動方法

Country Status (5)

Country Link
US (1) US8339837B2 (enExample)
JP (1) JP5774413B2 (enExample)
KR (1) KR101903785B1 (enExample)
CN (1) CN102385929B (enExample)
TW (1) TWI539609B (enExample)

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WO2012029637A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2013137853A (ja) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP6012450B2 (ja) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR20150128820A (ko) * 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
CN104299651B (zh) * 2013-07-16 2017-06-06 上海华虹宏力半导体制造有限公司 闪存的位线选择管电路
WO2015118436A1 (en) * 2014-02-07 2015-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, device, and electronic device
SG11201606647PA (en) 2014-03-14 2016-09-29 Semiconductor Energy Lab Co Ltd Circuit system
KR102487750B1 (ko) * 2017-03-03 2023-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
WO2019102293A1 (en) * 2017-11-24 2019-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and dynamic logic circuit
WO2019130144A1 (ja) * 2017-12-27 2019-07-04 株式会社半導体エネルギー研究所 記憶装置
JP2019164868A (ja) * 2018-03-20 2019-09-26 東芝メモリ株式会社 半導体記憶装置
KR20200138305A (ko) 2018-03-29 2020-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
CN109887536A (zh) * 2019-02-13 2019-06-14 上海新储集成电路有限公司 一种非易失性存储单元结构
US10872666B2 (en) * 2019-02-22 2020-12-22 Micron Technology, Inc. Source line management for memory cells with floating gates
WO2021041567A1 (en) 2019-08-28 2021-03-04 Micron Technology, Inc. Memory device having 2-transistor memory cell and access line plate
US11476252B2 (en) 2019-08-28 2022-10-18 Micron Technology, Inc. Memory device having 2-transistor vertical memory cell and shared channel region
CN118251010B (zh) * 2024-05-11 2025-02-28 北京超弦存储器研究院 半导体器件及其制造方法、电子设备

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JPS6034199B2 (ja) 1980-12-20 1985-08-07 株式会社東芝 半導体記憶装置
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US6016268A (en) * 1997-02-18 2000-01-18 Richard Mann Three transistor multi-state dynamic memory cell for embedded CMOS logic applications
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KR101662359B1 (ko) 2009-11-24 2016-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 셀을 포함하는 반도체 장치
KR101803254B1 (ko) 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
IN2012DN05057A (enExample) 2009-12-28 2015-10-09 Semiconductor Energy Lab
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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US8422272B2 (en) * 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8582348B2 (en) * 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device

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