JP2011503326A5 - - Google Patents

Download PDF

Info

Publication number
JP2011503326A5
JP2011503326A5 JP2010534130A JP2010534130A JP2011503326A5 JP 2011503326 A5 JP2011503326 A5 JP 2011503326A5 JP 2010534130 A JP2010534130 A JP 2010534130A JP 2010534130 A JP2010534130 A JP 2010534130A JP 2011503326 A5 JP2011503326 A5 JP 2011503326A5
Authority
JP
Japan
Prior art keywords
composition
metal ions
water
polyhedral silsesquioxane
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010534130A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011503326A (ja
JP5244916B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/083161 external-priority patent/WO2009064745A1/en
Publication of JP2011503326A publication Critical patent/JP2011503326A/ja
Publication of JP2011503326A5 publication Critical patent/JP2011503326A5/ja
Application granted granted Critical
Publication of JP5244916B2 publication Critical patent/JP5244916B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010534130A 2007-11-13 2008-11-12 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 Active JP5244916B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98770607P 2007-11-13 2007-11-13
US60/987,706 2007-11-13
PCT/US2008/083161 WO2009064745A1 (en) 2007-11-13 2008-11-12 High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Publications (3)

Publication Number Publication Date
JP2011503326A JP2011503326A (ja) 2011-01-27
JP2011503326A5 true JP2011503326A5 (enExample) 2011-12-01
JP5244916B2 JP5244916B2 (ja) 2013-07-24

Family

ID=40469771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010534130A Active JP5244916B2 (ja) 2007-11-13 2008-11-12 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法

Country Status (8)

Country Link
US (1) US7976638B2 (enExample)
EP (1) EP2215203B1 (enExample)
JP (1) JP5244916B2 (enExample)
KR (1) KR101569338B1 (enExample)
CN (1) CN101855334B (enExample)
ES (1) ES2386692T3 (enExample)
TW (1) TWI472579B (enExample)
WO (1) WO2009064745A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
KR101857807B1 (ko) * 2011-08-22 2018-06-19 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR101880300B1 (ko) * 2011-08-23 2018-08-17 동우 화인켐 주식회사 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법
KR101880305B1 (ko) * 2011-12-16 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101880306B1 (ko) * 2011-12-19 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101965904B1 (ko) * 2011-12-20 2019-08-14 동우 화인켐 주식회사 액정 표시장치용 어레이 기판 제조방법
KR101978521B1 (ko) * 2012-10-05 2019-05-15 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
KR101957525B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101957524B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
JP6798045B2 (ja) 2018-01-16 2020-12-09 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
JP6552676B2 (ja) * 2018-05-10 2019-07-31 富士フイルム株式会社 ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液
KR102002276B1 (ko) * 2019-05-03 2019-07-19 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
JP2021042326A (ja) * 2019-09-12 2021-03-18 日華化学株式会社 電解洗浄剤及び金属の洗浄方法
TWI810469B (zh) * 2019-09-27 2023-08-01 日商德山股份有限公司 釕的半導體用處理液及其製造方法
US11932590B2 (en) 2019-09-27 2024-03-19 Tokuyama Corporation Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation
KR102273127B1 (ko) * 2020-09-21 2021-07-05 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
KR102345211B1 (ko) * 2020-09-21 2022-01-03 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
US20240067878A1 (en) * 2022-08-30 2024-02-29 Tokuyama Corporation Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3837397A1 (de) * 1988-11-03 1990-05-10 Wacker Chemie Gmbh Neue organooligosilsesquioxane
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5817610A (en) 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US6066609A (en) * 1997-07-31 2000-05-23 Siemens Aktiengesellschaft Aqueous solution for cleaning a semiconductor substrate
US5935871A (en) * 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6261466B1 (en) * 1997-12-11 2001-07-17 Shipley Company, L.L.C. Composition for circuit board manufacture
ES2328309T3 (es) * 1998-05-18 2009-11-11 Mallinckrodt Baker, Inc. Composiciones alcalinas que contienen silicato para limpiar sustratos microelectronicos.
JP2000091289A (ja) * 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
DE60108286T2 (de) * 2000-03-27 2005-12-29 Shipley Co., L.L.C., Marlborough Entfernungsmittel für Polymer
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TWI276682B (en) 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
US20040220066A1 (en) * 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
EP1648991B1 (en) * 2003-06-27 2007-10-17 Interuniversitair Microelektronica Centrum ( Imec) Semiconductor cleaning solution
US7576169B2 (en) * 2003-10-23 2009-08-18 The Regents Of The University Of Michigan Facile synthesis of polyhedral silsesquioxane anions and use thereof
US7887641B2 (en) * 2004-01-09 2011-02-15 Ecolab Usa Inc. Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7320956B2 (en) * 2004-04-01 2008-01-22 3M Innovative Properties Company Aqueous cleaning/treatment composition for fibrous substrates
EP1866957A1 (en) * 2005-04-08 2007-12-19 Sachem, Inc. Selective wet etching of metal nitrides
WO2007044446A1 (en) 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Oxidizing aqueous cleaner for the removal of post-etch residues

Similar Documents

Publication Publication Date Title
TW200932832A (en) High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean
JP2014521123A5 (enExample)
JP2009024164A5 (enExample)
TWI835725B (zh) 表面處理方法及用於該方法的組成物
JP5940174B2 (ja) コーティング組成物、その製造方法及びコーティング物品
JP2016521251A5 (enExample)
US9196472B2 (en) Processing liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same
WO2015138301A1 (en) Composition for tungsten cmp
JP2010541203A5 (enExample)
JP2005298818A5 (enExample)
JP2007116105A5 (enExample)
JP2005528234A5 (enExample)
JP2014527298A5 (enExample)
JP2015523439A5 (ja) 量子ドット結合用リガンド及び組成物
JPWO2009044647A1 (ja) シリコンエッチング液およびエッチング方法
JP2013511144A5 (enExample)
JP2005260213A5 (enExample)
JP2019121641A5 (enExample)
US8921229B2 (en) Method of polishing copper wiring surfaces in ultra large scale integrated circuits
JP5664653B2 (ja) 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
TW200913049A (en) Compositions and methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices
TWI647300B (zh) 硏磨用組成物、硏磨方法以及基板的製造方法
TW200636029A (en) Compositions and methods for chemical mechanical polishing interlevel dielectric layers
TWI656204B (zh) 研磨用組成物、該使用方法、及基板之製造方法
KR20170078867A (ko) 금속 미세 구조체의 패턴 도괴 억제용 처리액 및 이것을 이용한 금속 미세 구조체의 제조 방법