KR101569338B1 - 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법 - Google Patents

손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법 Download PDF

Info

Publication number
KR101569338B1
KR101569338B1 KR1020107010520A KR20107010520A KR101569338B1 KR 101569338 B1 KR101569338 B1 KR 101569338B1 KR 1020107010520 A KR1020107010520 A KR 1020107010520A KR 20107010520 A KR20107010520 A KR 20107010520A KR 101569338 B1 KR101569338 B1 KR 101569338B1
Authority
KR
South Korea
Prior art keywords
delete delete
composition
metal ion
zeta potential
polyhedral silsesquioxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107010520A
Other languages
English (en)
Korean (ko)
Other versions
KR20100091974A (ko
Inventor
지안준 하오
Original Assignee
사켐,인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사켐,인코포레이티드 filed Critical 사켐,인코포레이티드
Publication of KR20100091974A publication Critical patent/KR20100091974A/ko
Application granted granted Critical
Publication of KR101569338B1 publication Critical patent/KR101569338B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/08—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/162—Organic compounds containing Si
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/14—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
KR1020107010520A 2007-11-13 2008-11-12 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법 Expired - Fee Related KR101569338B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98770607P 2007-11-13 2007-11-13
US60/987,706 2007-11-13

Publications (2)

Publication Number Publication Date
KR20100091974A KR20100091974A (ko) 2010-08-19
KR101569338B1 true KR101569338B1 (ko) 2015-11-17

Family

ID=40469771

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107010520A Expired - Fee Related KR101569338B1 (ko) 2007-11-13 2008-11-12 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법

Country Status (8)

Country Link
US (1) US7976638B2 (enExample)
EP (1) EP2215203B1 (enExample)
JP (1) JP5244916B2 (enExample)
KR (1) KR101569338B1 (enExample)
CN (1) CN101855334B (enExample)
ES (1) ES2386692T3 (enExample)
TW (1) TWI472579B (enExample)
WO (1) WO2009064745A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
KR101857807B1 (ko) * 2011-08-22 2018-06-19 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR101880300B1 (ko) * 2011-08-23 2018-08-17 동우 화인켐 주식회사 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법
KR101880305B1 (ko) * 2011-12-16 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101880306B1 (ko) * 2011-12-19 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101965904B1 (ko) * 2011-12-20 2019-08-14 동우 화인켐 주식회사 액정 표시장치용 어레이 기판 제조방법
KR101978521B1 (ko) * 2012-10-05 2019-05-15 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
KR101957524B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101957525B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
KR20250022896A (ko) * 2018-01-16 2025-02-17 가부시키가이샤 도쿠야마 차아염소산 이온을 포함하는 반도체 웨이퍼의 처리액
JP6552676B2 (ja) * 2018-05-10 2019-07-31 富士フイルム株式会社 ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液
KR102002276B1 (ko) * 2019-05-03 2019-07-19 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
JP2021042326A (ja) * 2019-09-12 2021-03-18 日華化学株式会社 電解洗浄剤及び金属の洗浄方法
CN114466951B (zh) 2019-09-27 2025-02-28 株式会社德山 钌的半导体用处理液及其制造方法
JP6874231B1 (ja) 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
KR102345211B1 (ko) 2020-09-21 2022-01-03 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
KR102273127B1 (ko) * 2020-09-21 2021-07-05 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
JP2024035172A (ja) * 2022-08-30 2024-03-13 株式会社トクヤマ シリコンエッチング液およびその製造方法、基板の処理方法、並びにシリコンデバイスの製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3837397A1 (de) 1988-11-03 1990-05-10 Wacker Chemie Gmbh Neue organooligosilsesquioxane
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5561105A (en) 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
US5817610A (en) 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US5759973A (en) 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
US6066609A (en) 1997-07-31 2000-05-23 Siemens Aktiengesellschaft Aqueous solution for cleaning a semiconductor substrate
US5935871A (en) 1997-08-22 1999-08-10 Motorola, Inc. Process for forming a semiconductor device
US6261466B1 (en) 1997-12-11 2001-07-17 Shipley Company, L.L.C. Composition for circuit board manufacture
PT1105778E (pt) 1998-05-18 2009-09-23 Mallinckrodt Baker Inc Composições alcalinas contendo silicato para limpeza de substratos microelectrónicos
JP2000091289A (ja) 1998-09-10 2000-03-31 Hitachi Ltd 半導体集積回路装置の製造方法
US6475966B1 (en) 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
EP1138726B1 (en) 2000-03-27 2005-01-12 Shipley Company LLC Polymer remover
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
US20040220066A1 (en) 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
WO2005001016A1 (en) 2003-06-27 2005-01-06 Interuniversitair Microelektronica Centrum (Imec) Semiconductor cleaning solution
US7576169B2 (en) 2003-10-23 2009-08-18 The Regents Of The University Of Michigan Facile synthesis of polyhedral silsesquioxane anions and use thereof
US7887641B2 (en) 2004-01-09 2011-02-15 Ecolab Usa Inc. Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7320956B2 (en) * 2004-04-01 2008-01-22 3M Innovative Properties Company Aqueous cleaning/treatment composition for fibrous substrates
CN101248516A (zh) 2005-04-08 2008-08-20 塞克姆公司 金属氮化物的选择性湿蚀刻
SG10201508243UA (en) 2005-10-05 2015-11-27 Entegris Inc Oxidizing aqueous cleaner for the removal of post-etch residues

Also Published As

Publication number Publication date
TW200932832A (en) 2009-08-01
CN101855334B (zh) 2013-03-27
KR20100091974A (ko) 2010-08-19
JP5244916B2 (ja) 2013-07-24
HK1147279A1 (en) 2011-08-05
JP2011503326A (ja) 2011-01-27
WO2009064745A1 (en) 2009-05-22
CN101855334A (zh) 2010-10-06
US7976638B2 (en) 2011-07-12
EP2215203A1 (en) 2010-08-11
EP2215203B1 (en) 2012-05-16
US20090120458A1 (en) 2009-05-14
TWI472579B (zh) 2015-02-11
ES2386692T3 (es) 2012-08-27

Similar Documents

Publication Publication Date Title
KR101569338B1 (ko) 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법
TWI714013B (zh) 於製造一半導體裝置時用於從一矽-鍺/鍺堆疊選擇性移除矽-鍺合金的蝕刻溶液
JP6892418B2 (ja) 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金に対してシリコンを選択的に除去するためのエッチング液
KR102141447B1 (ko) 반도체 디바이스의 제조 동안 질화규소를 선택적으로 제거하기 위한 에칭 용액
KR102659845B1 (ko) 세리아 제거 조성물
KR102522365B1 (ko) 세리아 입자에 대한 cmp 후 세정 조성물
CN105873691B (zh) 用于去除表面上的残余物的清洗调配物
JP7527313B2 (ja) 半導体デバイスの製造中にｐ－ドープされたシリコン及びシリコン―ゲルマニウムに対してポリシリコンを選択的に除去するための液体組成物
KR20190022411A (ko) 반도체 소자의 제조 과정에서 실리콘-게르마늄／실리콘 스택으로부터 실리콘-게르마늄 합금을 선택적으로 제거하기 위한 에칭액
CN108121149A (zh) TiN硬掩模和蚀刻残留物去除
TWI816379B (zh) 於製造一半導體裝置時用於從一矽-鍺/矽堆疊選擇性移除矽-鍺合金的蝕刻溶液
KR102799406B1 (ko) 산화하프늄 부식 억제제
HK1147279B (en) High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20181111

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20181111