ES2386692T3 - Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños - Google Patents
Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños Download PDFInfo
- Publication number
- ES2386692T3 ES2386692T3 ES08849368T ES08849368T ES2386692T3 ES 2386692 T3 ES2386692 T3 ES 2386692T3 ES 08849368 T ES08849368 T ES 08849368T ES 08849368 T ES08849368 T ES 08849368T ES 2386692 T3 ES2386692 T3 ES 2386692T3
- Authority
- ES
- Spain
- Prior art keywords
- composition
- polyhedral silsesquioxane
- zeta potential
- free
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229960002433 cysteine Drugs 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- SCIGVHCNNXTQDB-UHFFFAOYSA-N decyl dihydrogen phosphate Chemical compound CCCCCCCCCCOP(O)(O)=O SCIGVHCNNXTQDB-UHFFFAOYSA-N 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- KFJNCGCKGILQMF-UHFFFAOYSA-M dibutyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(C)CCCC KFJNCGCKGILQMF-UHFFFAOYSA-M 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- IIAPBJPXNIYANW-UHFFFAOYSA-M ethyl-(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CCO IIAPBJPXNIYANW-UHFFFAOYSA-M 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000004673 fluoride salts Chemical group 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Inorganic materials Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- WTSXICLFTPPDTL-UHFFFAOYSA-N pentane-1,3-diamine Chemical compound CCC(N)CCN WTSXICLFTPPDTL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000447 polyanionic polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000004023 quaternary phosphonium compounds Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000012088 reference solution Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- IHWNIDVBJNXVKL-UHFFFAOYSA-N tetraethylazanium;hypochlorite Chemical compound Cl[O-].CC[N+](CC)(CC)CC IHWNIDVBJNXVKL-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- HPWUYZIJILJHNG-UHFFFAOYSA-M tributyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCO)(CCCC)CCCC HPWUYZIJILJHNG-UHFFFAOYSA-M 0.000 description 1
- FYFNFZLMMGXBMT-UHFFFAOYSA-M tributyl(ethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CC)(CCCC)CCCC FYFNFZLMMGXBMT-UHFFFAOYSA-M 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- ZNEOHLHCKGUAEB-UHFFFAOYSA-N trimethylphenylammonium Chemical compound C[N+](C)(C)C1=CC=CC=C1 ZNEOHLHCKGUAEB-UHFFFAOYSA-N 0.000 description 1
- MBYLVOKEDDQJDY-UHFFFAOYSA-N tris(2-aminoethyl)amine Chemical compound NCCN(CCN)CCN MBYLVOKEDDQJDY-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/14—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98770607P | 2007-11-13 | 2007-11-13 | |
| US987706P | 2007-11-13 | ||
| PCT/US2008/083161 WO2009064745A1 (en) | 2007-11-13 | 2008-11-12 | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2386692T3 true ES2386692T3 (es) | 2012-08-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES08849368T Active ES2386692T3 (es) | 2007-11-13 | 2008-11-12 | Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7976638B2 (enExample) |
| EP (1) | EP2215203B1 (enExample) |
| JP (1) | JP5244916B2 (enExample) |
| KR (1) | KR101569338B1 (enExample) |
| CN (1) | CN101855334B (enExample) |
| ES (1) | ES2386692T3 (enExample) |
| TW (1) | TWI472579B (enExample) |
| WO (1) | WO2009064745A1 (enExample) |
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| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
| KR101857807B1 (ko) * | 2011-08-22 | 2018-06-19 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
| KR101880300B1 (ko) * | 2011-08-23 | 2018-08-17 | 동우 화인켐 주식회사 | 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법 |
| KR101880305B1 (ko) * | 2011-12-16 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101880306B1 (ko) * | 2011-12-19 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101965904B1 (ko) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | 액정 표시장치용 어레이 기판 제조방법 |
| KR101978521B1 (ko) * | 2012-10-05 | 2019-05-15 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| KR101957525B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| KR101957524B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| JP6460729B2 (ja) * | 2014-10-31 | 2019-01-30 | 富士フイルム株式会社 | 基板処理方法、及び、半導体素子の製造方法 |
| CN111684570B (zh) * | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| JP6552676B2 (ja) * | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液 |
| KR102002276B1 (ko) * | 2019-05-03 | 2019-07-19 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| JP2021042326A (ja) * | 2019-09-12 | 2021-03-18 | 日華化学株式会社 | 電解洗浄剤及び金属の洗浄方法 |
| EP4023791B1 (en) * | 2019-09-27 | 2023-10-11 | Tokuyama Corporation | Semiconductor treatment liquid for ruthenium and method for producing same |
| KR102799383B1 (ko) | 2019-09-27 | 2025-04-22 | 가부시끼가이샤 도꾸야마 | RuO4 가스의 발생 억제제 및 RuO4 가스의 발생 억제 방법 |
| KR102273127B1 (ko) * | 2020-09-21 | 2021-07-05 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR102345211B1 (ko) * | 2020-09-21 | 2022-01-03 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| US20240067878A1 (en) * | 2022-08-30 | 2024-02-29 | Tokuyama Corporation | Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device |
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| DE3837397A1 (de) * | 1988-11-03 | 1990-05-10 | Wacker Chemie Gmbh | Neue organooligosilsesquioxane |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
| US5817610A (en) | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US6066609A (en) * | 1997-07-31 | 2000-05-23 | Siemens Aktiengesellschaft | Aqueous solution for cleaning a semiconductor substrate |
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| US6261466B1 (en) * | 1997-12-11 | 2001-07-17 | Shipley Company, L.L.C. | Composition for circuit board manufacture |
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| US7887641B2 (en) * | 2004-01-09 | 2011-02-15 | Ecolab Usa Inc. | Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them |
| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US7320956B2 (en) * | 2004-04-01 | 2008-01-22 | 3M Innovative Properties Company | Aqueous cleaning/treatment composition for fibrous substrates |
| US20060226122A1 (en) * | 2005-04-08 | 2006-10-12 | Wojtczak William A | Selective wet etching of metal nitrides |
| EP1932174A4 (en) | 2005-10-05 | 2009-09-23 | Advanced Tech Materials | AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK |
-
2008
- 2008-11-12 JP JP2010534130A patent/JP5244916B2/ja active Active
- 2008-11-12 KR KR1020107010520A patent/KR101569338B1/ko not_active Expired - Fee Related
- 2008-11-12 ES ES08849368T patent/ES2386692T3/es active Active
- 2008-11-12 WO PCT/US2008/083161 patent/WO2009064745A1/en not_active Ceased
- 2008-11-12 CN CN200880115634.4A patent/CN101855334B/zh not_active Expired - Fee Related
- 2008-11-12 EP EP08849368A patent/EP2215203B1/en not_active Not-in-force
- 2008-11-12 US US12/269,121 patent/US7976638B2/en active Active
- 2008-11-13 TW TW97143846A patent/TWI472579B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK1147279A1 (en) | 2011-08-05 |
| EP2215203A1 (en) | 2010-08-11 |
| WO2009064745A1 (en) | 2009-05-22 |
| US7976638B2 (en) | 2011-07-12 |
| TW200932832A (en) | 2009-08-01 |
| JP5244916B2 (ja) | 2013-07-24 |
| JP2011503326A (ja) | 2011-01-27 |
| CN101855334A (zh) | 2010-10-06 |
| CN101855334B (zh) | 2013-03-27 |
| US20090120458A1 (en) | 2009-05-14 |
| EP2215203B1 (en) | 2012-05-16 |
| KR101569338B1 (ko) | 2015-11-17 |
| TWI472579B (zh) | 2015-02-11 |
| KR20100091974A (ko) | 2010-08-19 |
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