TWI472579B - 高負電動勢多面體倍半矽氧烷組合物以及無損害半導體濕式清潔方法 - Google Patents
高負電動勢多面體倍半矽氧烷組合物以及無損害半導體濕式清潔方法 Download PDFInfo
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- TWI472579B TWI472579B TW97143846A TW97143846A TWI472579B TW I472579 B TWI472579 B TW I472579B TW 97143846 A TW97143846 A TW 97143846A TW 97143846 A TW97143846 A TW 97143846A TW I472579 B TWI472579 B TW I472579B
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- IHWNIDVBJNXVKL-UHFFFAOYSA-N tetraethylazanium;hypochlorite Chemical compound Cl[O-].CC[N+](CC)(CC)CC IHWNIDVBJNXVKL-UHFFFAOYSA-N 0.000 description 1
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- HPWUYZIJILJHNG-UHFFFAOYSA-M tributyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCO)(CCCC)CCCC HPWUYZIJILJHNG-UHFFFAOYSA-M 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- JAJRRCSBKZOLPA-UHFFFAOYSA-M triethyl(methyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(CC)CC JAJRRCSBKZOLPA-UHFFFAOYSA-M 0.000 description 1
- ZNEOHLHCKGUAEB-UHFFFAOYSA-N trimethylphenylammonium Chemical compound C[N+](C)(C)C1=CC=CC=C1 ZNEOHLHCKGUAEB-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/14—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98770607P | 2007-11-13 | 2007-11-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200932832A TW200932832A (en) | 2009-08-01 |
| TWI472579B true TWI472579B (zh) | 2015-02-11 |
Family
ID=40469771
Family Applications (1)
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| TW97143846A TWI472579B (zh) | 2007-11-13 | 2008-11-13 | 高負電動勢多面體倍半矽氧烷組合物以及無損害半導體濕式清潔方法 |
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| CN (1) | CN101855334B (enExample) |
| ES (1) | ES2386692T3 (enExample) |
| TW (1) | TWI472579B (enExample) |
| WO (1) | WO2009064745A1 (enExample) |
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| US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
| KR101857807B1 (ko) * | 2011-08-22 | 2018-06-19 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
| KR101880300B1 (ko) * | 2011-08-23 | 2018-08-17 | 동우 화인켐 주식회사 | 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법 |
| KR101880305B1 (ko) * | 2011-12-16 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101880306B1 (ko) * | 2011-12-19 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101965904B1 (ko) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | 액정 표시장치용 어레이 기판 제조방법 |
| KR101978521B1 (ko) * | 2012-10-05 | 2019-05-15 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| KR101957525B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| KR101957524B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| JP6460729B2 (ja) * | 2014-10-31 | 2019-01-30 | 富士フイルム株式会社 | 基板処理方法、及び、半導体素子の製造方法 |
| CN111684570B (zh) * | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| JP6552676B2 (ja) * | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液 |
| KR102002276B1 (ko) * | 2019-05-03 | 2019-07-19 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| JP2021042326A (ja) * | 2019-09-12 | 2021-03-18 | 日華化学株式会社 | 電解洗浄剤及び金属の洗浄方法 |
| EP4023791B1 (en) * | 2019-09-27 | 2023-10-11 | Tokuyama Corporation | Semiconductor treatment liquid for ruthenium and method for producing same |
| KR102799383B1 (ko) | 2019-09-27 | 2025-04-22 | 가부시끼가이샤 도꾸야마 | RuO4 가스의 발생 억제제 및 RuO4 가스의 발생 억제 방법 |
| KR102273127B1 (ko) * | 2020-09-21 | 2021-07-05 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR102345211B1 (ko) * | 2020-09-21 | 2022-01-03 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| US20240067878A1 (en) * | 2022-08-30 | 2024-02-29 | Tokuyama Corporation | Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device |
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- 2008-11-12 JP JP2010534130A patent/JP5244916B2/ja active Active
- 2008-11-12 KR KR1020107010520A patent/KR101569338B1/ko not_active Expired - Fee Related
- 2008-11-12 ES ES08849368T patent/ES2386692T3/es active Active
- 2008-11-12 WO PCT/US2008/083161 patent/WO2009064745A1/en not_active Ceased
- 2008-11-12 CN CN200880115634.4A patent/CN101855334B/zh not_active Expired - Fee Related
- 2008-11-12 EP EP08849368A patent/EP2215203B1/en not_active Not-in-force
- 2008-11-12 US US12/269,121 patent/US7976638B2/en active Active
- 2008-11-13 TW TW97143846A patent/TWI472579B/zh not_active IP Right Cessation
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| TWI226520B (en) * | 1998-05-18 | 2005-01-11 | Mallinckrodt Inc | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
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Also Published As
| Publication number | Publication date |
|---|---|
| HK1147279A1 (en) | 2011-08-05 |
| EP2215203A1 (en) | 2010-08-11 |
| WO2009064745A1 (en) | 2009-05-22 |
| US7976638B2 (en) | 2011-07-12 |
| TW200932832A (en) | 2009-08-01 |
| JP5244916B2 (ja) | 2013-07-24 |
| JP2011503326A (ja) | 2011-01-27 |
| CN101855334A (zh) | 2010-10-06 |
| CN101855334B (zh) | 2013-03-27 |
| US20090120458A1 (en) | 2009-05-14 |
| EP2215203B1 (en) | 2012-05-16 |
| KR101569338B1 (ko) | 2015-11-17 |
| ES2386692T3 (es) | 2012-08-27 |
| KR20100091974A (ko) | 2010-08-19 |
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