CN101855334B - 高负电动势多面体倍半硅氧烷组合物及无损坏半导体湿式清洁方法 - Google Patents
高负电动势多面体倍半硅氧烷组合物及无损坏半导体湿式清洁方法 Download PDFInfo
- Publication number
- CN101855334B CN101855334B CN200880115634.4A CN200880115634A CN101855334B CN 101855334 B CN101855334 B CN 101855334B CN 200880115634 A CN200880115634 A CN 200880115634A CN 101855334 B CN101855334 B CN 101855334B
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- CN
- China
- Prior art keywords
- composition
- specific examples
- polyhedral silsesquioxane
- salt
- metal ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/14—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98770607P | 2007-11-13 | 2007-11-13 | |
| US60/987,706 | 2007-11-13 | ||
| PCT/US2008/083161 WO2009064745A1 (en) | 2007-11-13 | 2008-11-12 | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101855334A CN101855334A (zh) | 2010-10-06 |
| CN101855334B true CN101855334B (zh) | 2013-03-27 |
Family
ID=40469771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880115634.4A Expired - Fee Related CN101855334B (zh) | 2007-11-13 | 2008-11-12 | 高负电动势多面体倍半硅氧烷组合物及无损坏半导体湿式清洁方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7976638B2 (enExample) |
| EP (1) | EP2215203B1 (enExample) |
| JP (1) | JP5244916B2 (enExample) |
| KR (1) | KR101569338B1 (enExample) |
| CN (1) | CN101855334B (enExample) |
| ES (1) | ES2386692T3 (enExample) |
| TW (1) | TWI472579B (enExample) |
| WO (1) | WO2009064745A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
| KR101857807B1 (ko) * | 2011-08-22 | 2018-06-19 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
| KR101880300B1 (ko) * | 2011-08-23 | 2018-08-17 | 동우 화인켐 주식회사 | 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법 |
| KR101880305B1 (ko) * | 2011-12-16 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101880306B1 (ko) * | 2011-12-19 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
| KR101965904B1 (ko) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | 액정 표시장치용 어레이 기판 제조방법 |
| KR101978521B1 (ko) * | 2012-10-05 | 2019-05-15 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| KR101957524B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| KR101957525B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
| JP6460729B2 (ja) * | 2014-10-31 | 2019-01-30 | 富士フイルム株式会社 | 基板処理方法、及び、半導体素子の製造方法 |
| US11390829B2 (en) * | 2018-01-16 | 2022-07-19 | Tokuyama Corporation | Treatment liquid for semiconductor wafers, which contains hypochlorite ions |
| JP6552676B2 (ja) * | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液 |
| KR102002276B1 (ko) * | 2019-05-03 | 2019-07-19 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
| JP2021042326A (ja) * | 2019-09-12 | 2021-03-18 | 日華化学株式会社 | 電解洗浄剤及び金属の洗浄方法 |
| KR102506715B1 (ko) * | 2019-09-27 | 2023-03-06 | 가부시끼가이샤 도꾸야마 | 루테늄의 반도체용 처리액 및 그 제조 방법 |
| CN114514598A (zh) | 2019-09-27 | 2022-05-17 | 株式会社德山 | RuO4气体的产生抑制剂以及RuO4气体的产生抑制方法 |
| KR102345211B1 (ko) | 2020-09-21 | 2022-01-03 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR102273127B1 (ko) * | 2020-09-21 | 2021-07-05 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| US20240067878A1 (en) * | 2022-08-30 | 2024-02-29 | Tokuyama Corporation | Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999060448A1 (en) * | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3837397A1 (de) | 1988-11-03 | 1990-05-10 | Wacker Chemie Gmbh | Neue organooligosilsesquioxane |
| US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5561105A (en) | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
| US5759973A (en) | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US5817610A (en) | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6066609A (en) | 1997-07-31 | 2000-05-23 | Siemens Aktiengesellschaft | Aqueous solution for cleaning a semiconductor substrate |
| US5935871A (en) | 1997-08-22 | 1999-08-10 | Motorola, Inc. | Process for forming a semiconductor device |
| US6261466B1 (en) | 1997-12-11 | 2001-07-17 | Shipley Company, L.L.C. | Composition for circuit board manufacture |
| JP2000091289A (ja) | 1998-09-10 | 2000-03-31 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6475966B1 (en) | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
| DE60108286T2 (de) | 2000-03-27 | 2005-12-29 | Shipley Co., L.L.C., Marlborough | Entfernungsmittel für Polymer |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| TWI276682B (en) * | 2001-11-16 | 2007-03-21 | Mitsubishi Chem Corp | Substrate surface cleaning liquid mediums and cleaning method |
| US20040220066A1 (en) | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
| DE602004009584T2 (de) | 2003-06-27 | 2008-08-07 | Interuniversitair Microelektronica Centrum (Imec) | Halbleiterreinigungslösung |
| US7576169B2 (en) | 2003-10-23 | 2009-08-18 | The Regents Of The University Of Michigan | Facile synthesis of polyhedral silsesquioxane anions and use thereof |
| US7887641B2 (en) | 2004-01-09 | 2011-02-15 | Ecolab Usa Inc. | Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them |
| US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US7320956B2 (en) | 2004-04-01 | 2008-01-22 | 3M Innovative Properties Company | Aqueous cleaning/treatment composition for fibrous substrates |
| EP1866957A1 (en) | 2005-04-08 | 2007-12-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| JP2009512194A (ja) | 2005-10-05 | 2009-03-19 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | ポストエッチング残渣を除去するための酸化性水性洗浄剤 |
-
2008
- 2008-11-12 WO PCT/US2008/083161 patent/WO2009064745A1/en not_active Ceased
- 2008-11-12 CN CN200880115634.4A patent/CN101855334B/zh not_active Expired - Fee Related
- 2008-11-12 JP JP2010534130A patent/JP5244916B2/ja active Active
- 2008-11-12 ES ES08849368T patent/ES2386692T3/es active Active
- 2008-11-12 KR KR1020107010520A patent/KR101569338B1/ko not_active Expired - Fee Related
- 2008-11-12 US US12/269,121 patent/US7976638B2/en active Active
- 2008-11-12 EP EP08849368A patent/EP2215203B1/en not_active Not-in-force
- 2008-11-13 TW TW97143846A patent/TWI472579B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999060448A1 (en) * | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2215203A1 (en) | 2010-08-11 |
| HK1147279A1 (en) | 2011-08-05 |
| WO2009064745A1 (en) | 2009-05-22 |
| US7976638B2 (en) | 2011-07-12 |
| JP5244916B2 (ja) | 2013-07-24 |
| US20090120458A1 (en) | 2009-05-14 |
| JP2011503326A (ja) | 2011-01-27 |
| TWI472579B (zh) | 2015-02-11 |
| ES2386692T3 (es) | 2012-08-27 |
| EP2215203B1 (en) | 2012-05-16 |
| CN101855334A (zh) | 2010-10-06 |
| TW200932832A (en) | 2009-08-01 |
| KR101569338B1 (ko) | 2015-11-17 |
| KR20100091974A (ko) | 2010-08-19 |
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