JP5244916B2 - 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 - Google Patents
損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 Download PDFInfo
- Publication number
- JP5244916B2 JP5244916B2 JP2010534130A JP2010534130A JP5244916B2 JP 5244916 B2 JP5244916 B2 JP 5244916B2 JP 2010534130 A JP2010534130 A JP 2010534130A JP 2010534130 A JP2010534130 A JP 2010534130A JP 5244916 B2 JP5244916 B2 JP 5244916B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- polyhedral silsesquioxane
- zeta potential
- metal ions
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 174
- 238000000034 method Methods 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 title description 36
- 238000004140 cleaning Methods 0.000 title description 23
- 150000003839 salts Chemical class 0.000 claims description 80
- 229910021645 metal ion Inorganic materials 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 239000007800 oxidant agent Substances 0.000 claims description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 27
- 239000002105 nanoparticle Substances 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000013618 particulate matter Substances 0.000 claims description 14
- 125000003545 alkoxy group Chemical group 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 claims description 8
- 239000002738 chelating agent Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 6
- 239000011236 particulate material Substances 0.000 claims description 6
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 1
- 239000002245 particle Substances 0.000 description 92
- 150000001450 anions Chemical class 0.000 description 43
- 150000001768 cations Chemical class 0.000 description 42
- 239000002585 base Substances 0.000 description 40
- 230000000694 effects Effects 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- 238000009472 formulation Methods 0.000 description 19
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
- 235000011114 ammonium hydroxide Nutrition 0.000 description 15
- -1 quaternary ammonium silicates Chemical class 0.000 description 15
- 239000000908 ammonium hydroxide Substances 0.000 description 14
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical group C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 239000003960 organic solvent Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 10
- 125000000217 alkyl group Chemical group 0.000 description 10
- 125000001453 quaternary ammonium group Chemical group 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 10
- 230000007935 neutral effect Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000002195 synergetic effect Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 4
- APSPVJKFJYTCTN-UHFFFAOYSA-N tetramethylazanium;silicate Chemical compound C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.C[N+](C)(C)C.[O-][Si]([O-])([O-])[O-] APSPVJKFJYTCTN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000003868 ammonium compounds Chemical class 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 3
- 239000003093 cationic surfactant Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000004760 silicates Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 150000005846 sugar alcohols Polymers 0.000 description 3
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical class CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- KBKZYWOOZPIUJT-UHFFFAOYSA-N azane;hypochlorous acid Chemical compound N.ClO KBKZYWOOZPIUJT-UHFFFAOYSA-N 0.000 description 2
- 229940006460 bromide ion Drugs 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 150000001805 chlorine compounds Chemical group 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 150000002009 diols Chemical class 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000012458 free base Substances 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 150000001457 metallic cations Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- DJFBJKSMACBYBD-UHFFFAOYSA-N phosphane;hydrate Chemical group O.P DJFBJKSMACBYBD-UHFFFAOYSA-N 0.000 description 2
- 125000005496 phosphonium group Chemical group 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- 125000005497 tetraalkylphosphonium group Chemical group 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 2
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 2
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 1
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 description 1
- XWSGEVNYFYKXCP-UHFFFAOYSA-N 2-[carboxymethyl(methyl)amino]acetic acid Chemical compound OC(=O)CN(C)CC(O)=O XWSGEVNYFYKXCP-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 1
- KWYJDIUEHHCHCZ-UHFFFAOYSA-N 3-[2-[bis(2-carboxyethyl)amino]ethyl-(2-carboxyethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CCC(O)=O)CCN(CCC(O)=O)CCC(O)=O KWYJDIUEHHCHCZ-UHFFFAOYSA-N 0.000 description 1
- RPQFOXCKLIALTB-UHFFFAOYSA-M 3-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)CC[N+](C)(C)C RPQFOXCKLIALTB-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 description 1
- YZHQBWDNOANICQ-UHFFFAOYSA-M 4-hydroxybutyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCCO YZHQBWDNOANICQ-UHFFFAOYSA-M 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-M Aminoacetate Chemical compound NCC([O-])=O DHMQDGOQFOQNFH-UHFFFAOYSA-M 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229940120146 EDTMP Drugs 0.000 description 1
- 102100021587 Embryonic testis differentiation protein homolog A Human genes 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101000898120 Homo sapiens Embryonic testis differentiation protein homolog A Proteins 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- NHPKMFIBLXEDBI-UHFFFAOYSA-N acetic acid butane-1,4-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCCCN NHPKMFIBLXEDBI-UHFFFAOYSA-N 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- ZUQAPLKKNAQJAU-UHFFFAOYSA-N acetylenediol Chemical compound OC#CO ZUQAPLKKNAQJAU-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 125000006177 alkyl benzyl group Chemical group 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- 229960002433 cysteine Drugs 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- SCIGVHCNNXTQDB-UHFFFAOYSA-N decyl dihydrogen phosphate Chemical compound CCCCCCCCCCOP(O)(O)=O SCIGVHCNNXTQDB-UHFFFAOYSA-N 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- KFJNCGCKGILQMF-UHFFFAOYSA-M dibutyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(C)CCCC KFJNCGCKGILQMF-UHFFFAOYSA-M 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- IIAPBJPXNIYANW-UHFFFAOYSA-M ethyl-(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CCO IIAPBJPXNIYANW-UHFFFAOYSA-M 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-O ethylaminium Chemical compound CC[NH3+] QUSNBJAOOMFDIB-UHFFFAOYSA-O 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000004673 fluoride salts Chemical group 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- CDZDPHPSWKHONZ-UHFFFAOYSA-N hypochlorous acid;phosphane Chemical group P.ClO CDZDPHPSWKHONZ-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- WTSXICLFTPPDTL-UHFFFAOYSA-N pentane-1,3-diamine Chemical compound CCC(N)CCN WTSXICLFTPPDTL-UHFFFAOYSA-N 0.000 description 1
- KOZOPCULDSJWCP-UHFFFAOYSA-N phosphanium periodate Chemical group [PH4+].[O-]I(=O)(=O)=O KOZOPCULDSJWCP-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- XUWHAWMETYGRKB-UHFFFAOYSA-N piperidin-2-one Chemical compound O=C1CCCCN1 XUWHAWMETYGRKB-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000447 polyanionic polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229940075579 propyl gallate Drugs 0.000 description 1
- 239000000473 propyl gallate Substances 0.000 description 1
- 235000010388 propyl gallate Nutrition 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 150000004023 quaternary phosphonium compounds Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- IHWNIDVBJNXVKL-UHFFFAOYSA-N tetraethylazanium;hypochlorite Chemical compound Cl[O-].CC[N+](CC)(CC)CC IHWNIDVBJNXVKL-UHFFFAOYSA-N 0.000 description 1
- 150000003527 tetrahydropyrans Chemical class 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- GVXNBUDRLXVUCE-UHFFFAOYSA-N tetramethylazanium;hypochlorite Chemical compound Cl[O-].C[N+](C)(C)C GVXNBUDRLXVUCE-UHFFFAOYSA-N 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- HPWUYZIJILJHNG-UHFFFAOYSA-M tributyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCO)(CCCC)CCCC HPWUYZIJILJHNG-UHFFFAOYSA-M 0.000 description 1
- FYFNFZLMMGXBMT-UHFFFAOYSA-M tributyl(ethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CC)(CCCC)CCCC FYFNFZLMMGXBMT-UHFFFAOYSA-M 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- ZNEOHLHCKGUAEB-UHFFFAOYSA-N trimethylphenylammonium Chemical compound C[N+](C)(C)C1=CC=CC=C1 ZNEOHLHCKGUAEB-UHFFFAOYSA-N 0.000 description 1
- MBYLVOKEDDQJDY-UHFFFAOYSA-N tris(2-aminoethyl)amine Chemical compound NCCN(CCN)CCN MBYLVOKEDDQJDY-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
- C11D7/14—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Description
本願は、2007年11月13日に出願された米国特許仮出願第60/987,706号に関し、そして優先権を主張する。その全体は参照として、本明細書に完全に複写されたかのように、本明細書に援用される。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサン塩;
(c)酸化剤;および
(d)金属イオンを含まない水、
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩であり、該オニウムが、一般式:
(c)酸化剤;および
(d)金属イオンを含まない水、
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩であり、一般式
SinO5n/2 n−
(ここで、nは、約6から約20までの範囲である)を有し、;そして
該オニウムが、一般式:
(c)酸化剤;および
(d)金属イオンを含まない水、
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩であり、該多面体シルセスキオキサンが、式Si8O20 8−および構造(I):
(c)過酸化水素を含む酸化剤;および
(d)金属イオンを含まない水、
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩;
(c)酸化剤;および
(d)金属イオンを含まない水、
を含む成分を、約50℃から約85℃までの温度で組み合わせることによって得られたものである。この実施態様では、これらの成分は、本明細書に記載のような使用のための組成物を調製するために組み合わせられるが、組み合わせると成分が相互作用し得、そのため得られる種類は、組み合わせの結果としてある程度変化する。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩;
(c)酸化剤;および
(d)金属イオンを含まない水、
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩であり、オニウムが一般式:
(ここで、R1、R2、R3およびR4のそれぞれは、独立してH、C1〜C18アルキル基、C1〜C18アルコキシ基またはC1〜C18アルカノール基であり、そしてA=NまたはPである)を有する;
(c)酸化剤;および
(d)金属イオンを含まない水
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)水溶性の金属イオンを含まない多面体シルセスキオキサンのオニウム塩であり、一般式
SinO5n/2 n−
(ここで、nは、約6から約20までの範囲である)を有し;そして
オニウムが一般式:
(c)酸化剤;および
(d)金属イオンを含まない水
を含む。
(a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサンのオニウム塩であり、多面体シルセスキオキサンアニオンが式Si8O20 8−および構造(I):
(c)過酸化水素を含む酸化剤;および
(d)金属イオンを含まない水
を含む。
C成分=0.032616×成分の分子量(MW)。
ゼータ電位は、表面から少しの距離にある粒子のせん断面に存在する電位である。
本発明に用いられる多面体シルセスキオキサンのオニウム塩は、例えば、米国特許第5,047,492号の実施例8(a)に概説される、例えば、水酸化テトラメチルアンモニウムと沈降ケイ酸との反応による方法によって調製され得る。所望の多面体シルセスキオキサンのオニウム塩を得るために、反応物の比は、モル基準で1:1にするかまたは1:1に非常に近づけるべきであり、そして反応温度は約60℃にすべきであり、そして1つの実施態様では、反応温度は、約50℃から約85℃まででもよい。反応は、低温で開始され得るが、所望の多面体シルセスキオキサンアニオンを得るために、昇温が必要である。
適切な容器内の水1ガロンに、ヒュームドシリカ207.64gおよび水酸化テトラメチルアンモニウム1247.6gを加える(25.25質量%)。混合物を攪拌し、60℃まで緩やかに加熱する。24時間、または混合物が透明な溶液になるまで、この温度で反応を行う。調製されたままの溶液は、水溶液中に多面体シルセスキオキサンのオニウム塩を含み、そして本発明による組成物の処方に直接用いることができる。
プラスチック容器に、上記調製されたままの多面体シルセスキオキサン塩溶液、水酸化アンモニウムと水酸化テトラメチルアンモニウムとの混合物、過酸化水素および脱イオン水のそれぞれを表1に記載の量でを加えることによって、代表的な高い負のゼータ電位の多面体シルセスキオキサン塩処方物を調製する。この溶液を完全に混ざるまで振盪し、室温で1晩保存することもできる。
以下の処方物を調製し、その結果を図5に示す。
多面体 0.17C(上記のように、シルセスキオキサン
シルセスキオキサン: については、C=4.64質量%)
水酸化アンモニウム 0.1Cから10Cまで変更(NH4OHにおけるC)
過酸化水素 0.1Cから10Cまで変更(H2O2におけるC)
ここで、C=本明細書に定義されるようにSC−1の各成分の濃度。結果については図5を参照のこと。その議論は以下に説明する。
1つの実施態様では、組成物はキレート剤をさらに含む。キレート剤は、溶液中に金属を溶解させて保持するという組成物の能力を増加させるために、そしてウエハ基板の金属残渣の溶解を促進するために添加され得る。この目的のために有用なキレート剤の代表例は、以下の有機酸ならびにそれらの異性体および塩である:(エチレンジニトリロ)四酢酸(ETDA)、ブチレンジアミン四酢酸、シクロヘキサン−1,2−ジアミン四酢酸(CyDTA)、ジエチレントリアミン五酢酸(DETPA)、エチレンジアミンテトラプロピオン酸、(ヒドロキシエチル)エチレンジアミン三酢酸(HEDTA)、N,N,N’,N’−エチレンジアミンテトラ(メチレンホスホン)酸(EDTMP)、トリエチレンテトラミン六酢酸(TTHA)、1,3−ジアミノ−2−ヒドロキシプロパン−N,N,N’,N’−四酢酸(DHPTA)、メチルイミノ二酢酸、プロピレンジアミン四酢酸、ニトリロ三酢酸(nitrolotriacetic acid)(NTA)、クエン酸、酒石酸、グルコン酸、糖酸、グリセリン酸、シュウ酸、フタル酸、マレイン酸、マンデル酸、マロン酸、乳酸、サリチル酸、カテコール、没食子酸、没食子酸プロピル、ピロガロール、8−ヒドロキシキノリンおよびシステイン。
本発明はさらに、上述の組成物を使用する方法に関する。したがって、1つの実施態様では、本発明は集積回路デバイスの表面から粒子状物質を除去する方法に関し、上述の組成物のいずれかを表面に付与する工程を含む。1つの実施態様では、集積回路デバイスの製造中にその表面から粒子状物質を除去する方法は:
(a)1つ以上の金属イオンを含まない塩基;
(b)水溶性の金属イオンを含まない多面体シルセスキオキサン塩;
(c)酸化剤;および
(d)金属イオンを含まない水;
を含む組成物を表面に付与する工程;および
金属イオンを含まない水で表面をすすぐ工程、
を含む。もちろん、当業者に理解されるように、追加の方法工程は、さらなる濯ぎ、乾燥などが含まれ得る。多面体シルセスキオキサン塩は、本明細書に開示されたもののいずれかであり得るが、簡潔にするために、その説明はここでは繰り返さない。
Claims (15)
- (a)金属イオンを含まない1以上の塩基;
(b)金属イオンを含まない水溶性の多面体シルセスキオキサン塩;
(c)酸化剤;および
(d)金属イオンを含まない水、
を含む、組成物。 - 前記多面体シルセスキオキサン(b)が、一般式:
SinO5n/2 n−
(ここで、nは、6から20までの範囲である)を有する、請求項1または2に記載の組成物。 - 前記組成物が、8から14までの範囲のpHを有する、請求項1から4のいずれかの項に記載の組成物。
- 前記組成物が、金属キレート剤をさらに含む、請求項1から5のいずれかの項に記載の組成物。
- 前記酸化剤が、過酸化水素、オゾン、非金属次亜塩素酸塩またはそれらのいずれか2以上の組み合わせを含む、請求項1から6のいずれかの項に記載の組成物。
- (a)金属イオンを含まない1以上の塩基;(b)金属イオンを含まない水溶性の多面体シルセスキオキサン塩;(c)酸化剤を(d)金属イオンを含まない水中に組み合わせる工程を含む、請求項1から7のいずれかの項に記載の組成物を調製する方法。
- 前記金属イオンを含まない水溶性の多面体シルセスキオキサン塩を、第4級オニウム水酸化物と二酸化ケイ素とを実質的に1:1の化学量論比で反応させることによって調製する工程をさらに含む、請求項8に記載の方法。
- 集積回路デバイスの製造中に、その表面から粒子状物質を除去するための方法であって、請求項1から7のいずれかの項に記載の組成物を該表面に付与する工程を含む、方法。
- 前記粒子状物質が、ナノ粒子を含む、請求項10に記載の方法。
- 前記組成物が、前記集積回路デバイスに付着したナノ粒子について、実質的に唯一のケイ酸塩としてテトラアルキルアンモニウムケイ酸塩を含む組成物のゼータ電位よりも実質的に低いゼータ電位を示す、請求項10または11のいずれかの項に記載の方法。
- 前記集積回路デバイスが、少なくとも1つの誘電材料を含み、そして前記組成物が、該誘電材料のエッチングを実質的に示さない、請求項10から12のいずれかの項に記載の方法。
- 前記集積回路デバイスが、少なくとも1つのケイ素材料を含み、そして前記組成物が、該ケイ素材料のエッチングを実質的に示さない、請求項10から12のいずれかの項に記載の方法。
- 前記集積回路デバイスが、少なくとも1つの金属を含み、そして前記組成物が、該金属のエッチングを実質的に示さない、請求項10から14のいずれかの項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98770607P | 2007-11-13 | 2007-11-13 | |
US60/987,706 | 2007-11-13 | ||
PCT/US2008/083161 WO2009064745A1 (en) | 2007-11-13 | 2008-11-12 | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011503326A JP2011503326A (ja) | 2011-01-27 |
JP2011503326A5 JP2011503326A5 (ja) | 2011-12-01 |
JP5244916B2 true JP5244916B2 (ja) | 2013-07-24 |
Family
ID=40469771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010534130A Active JP5244916B2 (ja) | 2007-11-13 | 2008-11-12 | 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7976638B2 (ja) |
EP (1) | EP2215203B1 (ja) |
JP (1) | JP5244916B2 (ja) |
KR (1) | KR101569338B1 (ja) |
CN (1) | CN101855334B (ja) |
ES (1) | ES2386692T3 (ja) |
HK (1) | HK1147279A1 (ja) |
TW (1) | TWI472579B (ja) |
WO (1) | WO2009064745A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
KR101857807B1 (ko) * | 2011-08-22 | 2018-06-19 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
KR101880300B1 (ko) * | 2011-08-23 | 2018-08-17 | 동우 화인켐 주식회사 | 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법 |
KR101880305B1 (ko) * | 2011-12-16 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
KR101880306B1 (ko) * | 2011-12-19 | 2018-07-20 | 동우 화인켐 주식회사 | 전자재료용 세정액 조성물 |
KR101965904B1 (ko) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | 액정 표시장치용 어레이 기판 제조방법 |
KR101978521B1 (ko) * | 2012-10-05 | 2019-05-15 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
KR101957525B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
KR101957524B1 (ko) * | 2012-12-31 | 2019-06-19 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 |
JP6460729B2 (ja) * | 2014-10-31 | 2019-01-30 | 富士フイルム株式会社 | 基板処理方法、及び、半導体素子の製造方法 |
EP3726565A4 (en) * | 2018-01-16 | 2021-10-13 | Tokuyama Corporation | SEMICONDUCTOR SLICE TREATMENT LIQUID, CONTAINING HYPOCHLORITE IONS |
JP6552676B2 (ja) * | 2018-05-10 | 2019-07-31 | 富士フイルム株式会社 | ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液 |
KR102002276B1 (ko) * | 2019-05-03 | 2019-07-19 | 동우 화인켐 주식회사 | 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물 |
JP2021042326A (ja) * | 2019-09-12 | 2021-03-18 | 日華化学株式会社 | 電解洗浄剤及び金属の洗浄方法 |
TWI810469B (zh) * | 2019-09-27 | 2023-08-01 | 日商德山股份有限公司 | 釕的半導體用處理液及其製造方法 |
KR20220051230A (ko) | 2019-09-27 | 2022-04-26 | 가부시끼가이샤 도꾸야마 | RuO4 가스의 발생 억제제 및 RuO4 가스의 발생 억제 방법 |
KR102345211B1 (ko) * | 2020-09-21 | 2022-01-03 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3837397A1 (de) | 1988-11-03 | 1990-05-10 | Wacker Chemie Gmbh | Neue organooligosilsesquioxane |
US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
US5561105A (en) | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5817610A (en) | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US5759973A (en) | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US6066609A (en) | 1997-07-31 | 2000-05-23 | Siemens Aktiengesellschaft | Aqueous solution for cleaning a semiconductor substrate |
US5935871A (en) | 1997-08-22 | 1999-08-10 | Motorola, Inc. | Process for forming a semiconductor device |
US6261466B1 (en) | 1997-12-11 | 2001-07-17 | Shipley Company, L.L.C. | Composition for circuit board manufacture |
WO1999060448A1 (en) | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
JP2000091289A (ja) | 1998-09-10 | 2000-03-31 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6475966B1 (en) | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
EP1138726B1 (en) | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
TWI276682B (en) * | 2001-11-16 | 2007-03-21 | Mitsubishi Chem Corp | Substrate surface cleaning liquid mediums and cleaning method |
US20040220066A1 (en) | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
ATE376050T1 (de) | 2003-06-27 | 2007-11-15 | Imec Inter Uni Micro Electr | Halbleiterreinigungslösung |
US7576169B2 (en) | 2003-10-23 | 2009-08-18 | The Regents Of The University Of Michigan | Facile synthesis of polyhedral silsesquioxane anions and use thereof |
US7887641B2 (en) | 2004-01-09 | 2011-02-15 | Ecolab Usa Inc. | Neutral or alkaline medium chain peroxycarboxylic acid compositions and methods employing them |
US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US7320956B2 (en) * | 2004-04-01 | 2008-01-22 | 3M Innovative Properties Company | Aqueous cleaning/treatment composition for fibrous substrates |
US20060226122A1 (en) | 2005-04-08 | 2006-10-12 | Wojtczak William A | Selective wet etching of metal nitrides |
KR101444468B1 (ko) | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
-
2008
- 2008-11-12 WO PCT/US2008/083161 patent/WO2009064745A1/en active Application Filing
- 2008-11-12 CN CN200880115634.4A patent/CN101855334B/zh not_active Expired - Fee Related
- 2008-11-12 ES ES08849368T patent/ES2386692T3/es active Active
- 2008-11-12 EP EP08849368A patent/EP2215203B1/en not_active Not-in-force
- 2008-11-12 JP JP2010534130A patent/JP5244916B2/ja active Active
- 2008-11-12 US US12/269,121 patent/US7976638B2/en active Active
- 2008-11-12 KR KR1020107010520A patent/KR101569338B1/ko not_active IP Right Cessation
- 2008-11-13 TW TW97143846A patent/TWI472579B/zh not_active IP Right Cessation
-
2011
- 2011-02-10 HK HK11101271.5A patent/HK1147279A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR101569338B1 (ko) | 2015-11-17 |
TWI472579B (zh) | 2015-02-11 |
JP2011503326A (ja) | 2011-01-27 |
EP2215203B1 (en) | 2012-05-16 |
CN101855334B (zh) | 2013-03-27 |
KR20100091974A (ko) | 2010-08-19 |
WO2009064745A1 (en) | 2009-05-22 |
CN101855334A (zh) | 2010-10-06 |
HK1147279A1 (en) | 2011-08-05 |
ES2386692T3 (es) | 2012-08-27 |
EP2215203A1 (en) | 2010-08-11 |
US20090120458A1 (en) | 2009-05-14 |
US7976638B2 (en) | 2011-07-12 |
TW200932832A (en) | 2009-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5244916B2 (ja) | 損傷のない半導体の湿式洗浄のための高い負のゼータ電位の多面体シルセスキオキサン組成物および方法 | |
TWI714013B (zh) | 於製造一半導體裝置時用於從一矽-鍺/鍺堆疊選擇性移除矽-鍺合金的蝕刻溶液 | |
TWI683037B (zh) | 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 | |
JP6309999B2 (ja) | 窒化チタンハードマスク及びエッチ残留物除去 | |
TWI781379B (zh) | 用來移除表面殘餘物的清洗調配物及使用其之方法 | |
TWI693305B (zh) | 於製造一半導體裝置時用於從矽-鍺/矽堆疊同時移除矽及矽-鍺合金的蝕刻溶液 | |
TWI233942B (en) | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices | |
TWI754163B (zh) | 用於鈰粒子之化學機械研磨後(post cmp)清潔組合物 | |
TW201623598A (zh) | 具有高wn/w蝕刻選擇性的剝除組合物 | |
JP7262596B2 (ja) | セリア除去用組成物 | |
JP2022513197A (ja) | 化学機械研磨後洗浄組成物 | |
CN113287187A (zh) | 氧化铪腐蚀抑制剂 | |
TW202248413A (zh) | 清潔組合物 | |
WO2018169016A1 (ja) | 半導体デバイス用基板の洗浄剤組成物、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板 | |
JP4576927B2 (ja) | 洗浄用組成物及び洗浄方法 | |
TW202246579A (zh) | 於製造一半導體裝置時用於從一矽-鍺/矽堆疊選擇性移除矽-鍺合金的蝕刻溶液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111012 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111012 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130408 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160412 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5244916 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |