HK1147279A1 - High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean - Google Patents

High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Info

Publication number
HK1147279A1
HK1147279A1 HK11101271.5A HK11101271A HK1147279A1 HK 1147279 A1 HK1147279 A1 HK 1147279A1 HK 11101271 A HK11101271 A HK 11101271A HK 1147279 A1 HK1147279 A1 HK 1147279A1
Authority
HK
Hong Kong
Prior art keywords
zeta potential
high negative
wet clean
negative zeta
free semiconductor
Prior art date
Application number
HK11101271.5A
Other languages
English (en)
Inventor
Jianjun Hao
Original Assignee
Sachem Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sachem Inc filed Critical Sachem Inc
Publication of HK1147279A1 publication Critical patent/HK1147279A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/08—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/162—Organic compounds containing Si
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395—Bleaching agents
    • C11D3/3956—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/14—Silicates
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • C11D2111/22—
HK11101271.5A 2007-11-13 2011-02-10 High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean HK1147279A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98770607P 2007-11-13 2007-11-13
PCT/US2008/083161 WO2009064745A1 (en) 2007-11-13 2008-11-12 High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Publications (1)

Publication Number Publication Date
HK1147279A1 true HK1147279A1 (en) 2011-08-05

Family

ID=40469771

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11101271.5A HK1147279A1 (en) 2007-11-13 2011-02-10 High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean

Country Status (9)

Country Link
US (1) US7976638B2 (xx)
EP (1) EP2215203B1 (xx)
JP (1) JP5244916B2 (xx)
KR (1) KR101569338B1 (xx)
CN (1) CN101855334B (xx)
ES (1) ES2386692T3 (xx)
HK (1) HK1147279A1 (xx)
TW (1) TWI472579B (xx)
WO (1) WO2009064745A1 (xx)

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US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
KR101857807B1 (ko) * 2011-08-22 2018-06-19 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
KR101880300B1 (ko) * 2011-08-23 2018-08-17 동우 화인켐 주식회사 평판 디스플레이 제조에 필요한 세정액 조성물 및 이를 이용한 세정방법
KR101880305B1 (ko) * 2011-12-16 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101880306B1 (ko) * 2011-12-19 2018-07-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
KR101965904B1 (ko) * 2011-12-20 2019-08-14 동우 화인켐 주식회사 액정 표시장치용 어레이 기판 제조방법
KR101978521B1 (ko) * 2012-10-05 2019-05-15 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
KR101957524B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101957525B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
JP6460729B2 (ja) * 2014-10-31 2019-01-30 富士フイルム株式会社 基板処理方法、及び、半導体素子の製造方法
JP6798045B2 (ja) * 2018-01-16 2020-12-09 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
JP6552676B2 (ja) * 2018-05-10 2019-07-31 富士フイルム株式会社 ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液
KR102002276B1 (ko) * 2019-05-03 2019-07-19 동우 화인켐 주식회사 갈바닉 부식을 억제하는 포토레지스트 박리액 조성물
JP2021042326A (ja) * 2019-09-12 2021-03-18 日華化学株式会社 電解洗浄剤及び金属の洗浄方法
CN114514598A (zh) 2019-09-27 2022-05-17 株式会社德山 RuO4气体的产生抑制剂以及RuO4气体的产生抑制方法
WO2021059666A1 (ja) * 2019-09-27 2021-04-01 株式会社トクヤマ ルテニウムの半導体用処理液及びその製造方法
KR102345211B1 (ko) * 2020-09-21 2022-01-03 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법

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Also Published As

Publication number Publication date
KR20100091974A (ko) 2010-08-19
CN101855334A (zh) 2010-10-06
EP2215203A1 (en) 2010-08-11
TW200932832A (en) 2009-08-01
TWI472579B (zh) 2015-02-11
JP5244916B2 (ja) 2013-07-24
EP2215203B1 (en) 2012-05-16
CN101855334B (zh) 2013-03-27
ES2386692T3 (es) 2012-08-27
KR101569338B1 (ko) 2015-11-17
JP2011503326A (ja) 2011-01-27
US7976638B2 (en) 2011-07-12
WO2009064745A1 (en) 2009-05-22
US20090120458A1 (en) 2009-05-14

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20161112